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1. 发明授权

US07663151B2 Method of fabricating light emitting device and thus-fabricated light emitting device 有权
标题翻译：制造发光器件和由此制造的发光器件的方法
公开(公告)号：US07663151B2
公开(公告)日：2010-02-16
申请号：US11587632
申请日：2005-04-13
申请人： Hitoshi Ikeda , Kingo Suzuki , Akio Nakamura
发明人： Hitoshi Ikeda , Kingo Suzuki , Akio Nakamura
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/0095 , H01L33/30
摘要： A light emitting device chip is obtained by dicing a light emitting device wafer having a light emitting layer section 24 based on a double heterostructure in which a first-conductivity-type cladding layer 6, an active layer 5 and an second-conductivity-type cladding layer 4, each of which being composed of a compound semiconductor having a composition allowing lattice matching with GaAs, out of compound semiconductors expressed by formula (AlxGa1-x)yIn1-yP (where, 0≦x≦1, 0≦y≦1), are stacked in this order, and having the (100) surface appeared on the main surface thereof, and GaP transparent semiconductor layers 20, 90 stacked on the light emitting layer section 24 as being agreed with the crystal orientation thereof, so that the {100} surfaces appear on the side faces of the GaP transparent semiconductor layer. Accordingly, there can be provided a method of fabricating a light emitting device having the AlGaInP light emitting layer section and the GaP transparent semiconductor layers, less causative of failures such as edge chipping during the dicing.
摘要翻译：通过基于双异质结构对具有发光层部分24的发光器件晶片进行切割来获得发光器件芯片，其中第一导电型包覆层6，有源层5和第二导电型包层（Al x Ga 1-x）y In 1-y P表示的化合物半导体中的每一个由具有允许与GaAs晶格匹配的组成的化合物半导体构成，其中，0≤x≤1,0< y <= 1）按顺序堆叠，并且在其主表面上出现（100）表面，并且与发光层部分24堆叠在一起的GaP透明半导体层20,90与晶体取向一致，使得{100}表面出现在GaP透明半导体层的侧面上。因此，可以提供一种制造具有AlGaInP发光层部分和GaP透明半导体层的发光器件的方法，其不利于在切割期间的边缘切屑等故障。

2. 发明授权

US07579205B2 Method of fabricating light emitting device and thus-fabricated light emitting device 有权
标题翻译：制造发光器件和由此制造的发光器件的方法
公开(公告)号：US07579205B2
公开(公告)日：2009-08-25
申请号：US11587635
申请日：2005-04-13
申请人： Hitoshi Ikeda , Kingo Suzuki , Akio Nakamura
发明人： Hitoshi Ikeda , Kingo Suzuki , Akio Nakamura
IPC分类号： H01L21/00
CPC分类号： H01L33/30 , H01L24/03 , H01L24/05 , H01L33/22 , H01L2224/48091 , Y10S438/964 , H01L2924/00014
摘要： A light emitting device wafer having a light emitting layer section 24 having an AlGaInP-base double heterostructure, and a GaP light extraction layer 20 disposed on the light emitting layer section so as to allow a first main surface thereof to compose a first main surface of the wafer is fabricated so that the first main surface of the GaP light extraction layer appears as the (100) surface. The first main surface of the GaP light extraction layer 20 composed of the (100) surface is etched using an etching solution for surface roughening to thereby form surface roughening projections 40f. Accordingly, there can be provided a method of fabricating a light emitting device having the GaP light extraction layer agreed with the (100) main surface, capable of readily subjecting the (100) main surface to surface roughening.
摘要翻译：一种发光器件晶片，具有具有AlGaInP基双异质结构的发光层部分24和设置在发光层部分上的GaP光提取层20，以便允许其第一主表面组成第一主表面制造晶片，使得GaP光提取层的第一主表面显示为（100）表面。使用用于表面粗糙化的蚀刻溶液蚀刻由（100）表面构成的GaP光提取层20的第一主表面，从而形成表面粗糙化突起40f。因此，可以提供一种制造具有与（100）主表面一致的GaP光提取层的发光器件的方法，能够容易地使（100）主表面粗糙化。

3. 发明申请

US20080061307A1 Method of Fabricating Light Emitting Device and Thus-Fabricated Light Emitting Device 有权
标题翻译：制造发光装置和如此制造的发光装置的方法
公开(公告)号：US20080061307A1
公开(公告)日：2008-03-13
申请号：US11587635
申请日：2005-04-13
申请人： Hitoshi Ikeda , Kingo Suzuki , Akio Nakamura
发明人： Hitoshi Ikeda , Kingo Suzuki , Akio Nakamura
IPC分类号： H01L33/00 , H01L21/308
CPC分类号： H01L33/30 , H01L24/03 , H01L24/05 , H01L33/22 , H01L2224/48091 , Y10S438/964 , H01L2924/00014
摘要： A light emitting device wafer having a light emitting layer section 24 having an AlGaInP-base double heterostructure, and a GaP light extraction layer 20 disposed on the light emitting layer section so as to allow a first main surface thereof to compose a first main surface of the wafer is fabricated so that the first main surface of the GaP light extraction layer appears as the (100) surface. The first main surface of the GaP light extraction layer 20 composed of the (100) surface is etched using an etching solution for surface roughening to thereby form surface roughening projections 40f. Accordingly, there can be provided a method of fabricating a light emitting device having the GaP light extraction layer agreed with the (100) main surface, capable of readily subjecting the (100) main surface to surface roughening.
摘要翻译：一种发光器件晶片，具有具有AlGaInP基双异质结构的发光层部分24和设置在发光层部分上的GaP光提取层20，以便允许其第一主表面组成第一主表面制造晶片，使得GaP光提取层的第一主表面显示为（100）表面。使用用于表面粗糙化的蚀刻溶液蚀刻由（100）表面构成的GaP光提取层20的第一主表面，从而形成表面粗糙化突起40f。因此，可以提供一种制造具有与（100）主表面一致的GaP光提取层的发光器件的方法，能够容易地使（100）主表面粗糙化。

4. 发明申请

US20070224714A1 Method of Fabricating Light Emitting Device and Thus-Fabricated Light Emitting Device 有权
标题翻译：制造发光装置和如此制造的发光装置的方法
公开(公告)号：US20070224714A1
公开(公告)日：2007-09-27
申请号：US11587632
申请日：2005-04-13
申请人： Hitoshi Ikeda , Kingo Suzuki , Akio Nakamura
发明人： Hitoshi Ikeda , Kingo Suzuki , Akio Nakamura
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/0095 , H01L33/30
摘要： A light emitting device chip is obtained by dicing a light emitting device wafer having a light emitting layer section 24 based on a double heterostructure in which a first-conductivity-type cladding layer 6, an active layer 5 and an second-conductivity-type cladding layer 4, each of which being composed of a compound semiconductor having a composition allowing lattice matching with GaAs, out of compound semiconductors expressed by formula (AlxGa1-x)yIn1-yP (where, 0≦x≦1, 0≦y≦1), are stacked in this order, and having the (100) surface appeared on the main surface thereof, and GaP transparent semiconductor layers 20, 90 stacked on the light emitting layer section 24 as being agreed with the crystal orientation thereof, so that the {100} surfaces appear on the side faces of the GaP transparent semiconductor layer. Accordingly, there can be provided a method of fabricating a light emitting device having the AlGaInP light emitting layer section and the GaP transparent semiconductor layers, less causative of failures such as edge chipping during the dicing.
摘要翻译：通过基于双异质结构对具有发光层部分24的发光器件晶片进行切割来获得发光器件芯片，其中第一导电型包覆层6，有源层5和第二导电型包层层（其由具有允许与GaAs晶格匹配的组成的化合物半导体）组成，由式（Al x Ga 1-x N）表示的化合物半导体中，在1-y
（其中，0 <= x <= 1,0 <= y <= 1）中按顺序堆叠，并且具有（ 100）表面，以及与其晶体取向一致的层叠在发光层部分24上的GaP透明半导体层20,90，使得{100}表面出现在GaP的侧面透明半导体层。因此，可以提供一种制造具有AlGaInP发光层部分和GaP透明半导体层的发光器件的方法，其不利于在切割期间的边缘切屑等故障。

5. 发明授权

US06995401B2 Light emitting device and method of fabricating the same 失效
标题翻译：发光元件及其制造方法
公开(公告)号：US06995401B2
公开(公告)日：2006-02-07
申请号：US10690479
申请日：2003-10-22
申请人： Masato Yamada , Nobuhiko Noto , Masanobu Takahashi , Kingo Suzuki , Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki
发明人： Masato Yamada , Nobuhiko Noto , Masanobu Takahashi , Kingo Suzuki , Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki
IPC分类号： H01L27/15
CPC分类号： H01L33/14 , H01L33/20 , H01L33/42 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , Y10S257/918 , H01L2924/00014 , H01L2924/00
摘要： A light emitting device having an oxide transparent electrode layer as an emission drive electrode, and designed so that damage possibly occurs during bonding of electrode wires to the bonding pads is less influential to a light emitting layer portion is disclosed. The light emitting device has the light emitting layer portion composed of a compound semiconductor and has a double heterostructure in which a first-conductivity-type cladding layer, an active layer and a second-conductivity-type cladding layer are stacked in this order; and the light emitting layer portion is applied with emission drive voltage through an oxide transparent electrode layer formed so as to cover the main surface of the second-conductivity-type cladding layer. A bonding pad composed of a metal is disposed on the oxide transparent electrode layer, and to the bonding pad an electrode wire for current supply is bonded. Between the second-conductivity cladding layer and the oxide transparent electrode layer, a cushion layer composed of a compound semiconductor having a dopant concentration lower than that of the second-conductivity-type cladding layer is disposed.
摘要翻译：公开了一种具有氧化物透明电极层作为发光驱动电极的发光元件，其设计成使得在电极线接合到接合焊盘时可能发生的损伤对于发光层部分影响较小。发光器件具有由化合物半导体构成的发光层部分，并且具有双重异质结构，其中第一导电型包层，有源层和第二导电型包覆层依次层叠; 并且通过形成为覆盖第二导电型包层的主表面的氧化物透明电极层施加发光驱动电压。在氧化物透明电极层上设置由金属构成的接合焊盘，并且接合用于电流供给用的电极线。在第二导电率包层和氧化物透明电极层之间设置由掺杂剂浓度低于第二导电型包覆层的化合物半导体构成的缓冲层。

6. 发明授权

US06700139B2 GaP-base semiconductor light emitting device 失效
标题翻译： GaP基半导体发光器件
公开(公告)号：US06700139B2
公开(公告)日：2004-03-02
申请号：US10227840
申请日：2002-08-27
申请人： Kingo Suzuki , Hitoshi Ikeda , Yasutsugu Kaneko
发明人： Kingo Suzuki , Hitoshi Ikeda , Yasutsugu Kaneko
IPC分类号： H01L3300
CPC分类号： H01L33/30 , H01L24/32 , H01L33/22 , H01L2224/32245 , H01L2224/32257 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/92247 , H01L2924/00014 , H01L2924/00
摘要： The main surface on the side of a p-type layer of a GaP-base semiconductor is defined as a first main surface, and the main surface opposite thereto as a second main surface. The second main surface is lapped and then etched using aqua regia to thereby collectively form thereon specular concave curved surfaces which swell inwardly into the semiconductor substrate in order to enhance total reflection of light. On the other hand, the area on the surface of semiconductor substrate excluding that for forming a first contact layer and excluding the second main surface are subjected to anisotropic etching to thereby collectively form outwardly-swelling convex curved surfaces in order to reduce total reflection of light. A second contact layer (second electrode) to be formed on the second main surface is composed of an alloy of Au, Si and Ni, and a first contact layer to be formed on the first main surface is composed of an alloy of Au as combined with either of Be and Zn. This successfully provides a GaP-base semiconductor light emitting device which can ensure a satisfactory level of improvement in the luminance even though the emission mechanism thereof relies upon indirect transition.
摘要翻译： GaP基半导体的p型层侧的主表面被定义为第一主表面，与其相对的主表面作为第二主表面。第二主表面被研磨，然后用王水蚀刻，从而在其上共同形成镜面凹入的曲面，其向内膨胀到半导体衬底中，以增强光的全反射。另一方面，除了用于形成第一接触层并且不包括第二主表面的半导体衬底的表面上的区域进行各向异性蚀刻，从而共同形成向外膨胀的凸曲面，以减少光的全反射。要形成在第二主表面上的第二接触层（第二电极）由Au，Si和Ni的合金构成，并且在第一主表面上形成的第一接触层由合并的Au构成与Be和Zn中的任一个。这成功地提供了一种GaP基半导体发光器件，其能够确保亮度的令人满意的改善水平，即使其发光机制依赖于间接转换。

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