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1. 发明授权

US6095688A Stabilized, cubic, flexible container 失效
标题翻译：稳定的立方体，柔性容器
公开(公告)号：US6095688A
公开(公告)日：2000-08-01
申请号：US182010
申请日：1998-10-29
申请人： Cornelius Nittel , Wolfgang Werner
发明人： Cornelius Nittel , Wolfgang Werner
IPC分类号： B65D21/08 , B65D30/02 , B65D88/16 , B65D88/22 , B65D30/10
CPC分类号： B65D88/1631 , B65D88/1668
摘要： A stabilized, flexible, cubic container is provided, in which the stabilization is achieved by a continuous, tubular basic part which includes punched-out or cut-out sections. The basic tube is preferably in the form of a gusseted tube, of which the non-filled volume is provided in the corner regions via outer pocket-like material adaptions. The inner, open edges of the outer pocket-like material adaptions are connected with sealing action to the basic tube in an overlapping manner directly behind the punched-out or cut-out sections.
摘要翻译：提供了一种稳定的，柔性的立方体容器，其中通过连续的管状基本部件实现稳定化，其包括冲压切割部分或切口部分。基本管优选为角撑板的形式，其中未填充的体积通过外部袋状材料适应性设置在拐角区域中。外部袋状材料适应性的内部开口边缘以直接在冲压出或切除部分后面的重叠方式与基管的密封作用相连。

2. 发明授权

US09786659B2 Semiconductor component with dielectric layer stack and voltage divider 有权
公开(公告)号：US09786659B2
公开(公告)日：2017-10-10
申请号：US12862821
申请日：2010-08-25
申请人： Wolfgang Werner
发明人： Wolfgang Werner
IPC分类号： H01L27/088 , H01L23/52 , H01L27/08 , H01L27/06
CPC分类号： H01L27/0802 , H01L23/52 , H01L27/0676 , H01L27/0805 , H01L27/0814
摘要： A semiconductor component has a semiconductor body zone, a first electrically conductive layer adjacent to the semiconductor body zone, a first dielectric layer with first dielectric properties and a second dielectric layer with second dielectric properties. The first dielectric properties differ from the second dielectric properties. The first dielectric layer and the second dielectric layer are arranged between the semiconductor body zone and the first electrically conductive layer. A second electrically conductive layer is applied between the first dielectric layer and the second dielectric layer. A first voltage divider is switched between the first electrically conductive layer and the semiconductor body zone. The second electrically conductive layer is electrically conductively connected only to the voltage divider.

3. 发明授权

US09368308B2 Fuse in chip design 有权
标题翻译：保险丝芯片设计
公开(公告)号：US09368308B2
公开(公告)日：2016-06-14
申请号：US11571787
申请日：2005-06-27
申请人： Werner Blum , Reiner Friedrich , Reimer Hinrichs , Wolfgang Werner
发明人： Werner Blum , Reiner Friedrich , Reimer Hinrichs , Wolfgang Werner
IPC分类号： H01H85/04 , H01H69/02 , H01H85/00 , H01H85/046 , H01H85/041
CPC分类号： H01H85/046 , H01H69/022 , H01H85/006 , H01H85/0411 , H01H2085/0414 , Y10T29/49107
摘要： In order to produce a cost-effective fuse in chip design, which is applied to a carrier substrate made of a Al2O3 ceramic having a high thermal conductivity, and which is provided with a fusible metallic conductor and a cover layer, in which the melting point of the metallic conductor may be defined reliably, it is suggested that an intermediate layer having low thermal conductivity be positioned between the carrier substrate and the metallic conductor, the intermediate layer being formed by a low-melting-point inorganic glass paste applied in the screen-printing method or an organic intermediate layer applied in island printing. Furthermore, a method for manufacturing the fuse is specified.
摘要翻译：为了生产具有成本效益的芯片设计保险丝，其应用于由具有高导热性的Al 2 O 3陶瓷制成的载体衬底，并且具有可熔金属导体和覆盖层，其中熔点可以可靠地限定金属导体，建议在载体基板和金属导体之间设置导热性低的中间层，中间层由施加在屏幕上的低熔点无机玻璃浆料形成印刷方法或在岛印刷中应用的有机中间层。此外，规定了制造保险丝的方法。

4. 发明授权

US09343588B2 Normally-off semiconductor switches and normally-off JFETs 有权
标题翻译：常关半导体开关和常闭JFET
公开(公告)号：US09343588B2
公开(公告)日：2016-05-17
申请号：US13031956
申请日：2011-02-22
申请人： Wolfgang Werner
发明人： Wolfgang Werner
IPC分类号： H01L29/808 , H01L29/10 , H01L29/417 , H01L29/423
CPC分类号： H01L29/808 , H01L29/1066 , H01L29/41758 , H01L29/42316 , H01L29/8083
摘要： A normally-off JFET is provided. The normally-off JFET includes a channel region of a first conductivity type, a floating semiconductor region of a second conductivity type adjoining the channel region, and a contact region of the first conductivity type adjoining the floating semiconductor region. The floating semiconductor region is arranged between the contact region and the channel region. Further, a normally-off semiconductor switch is provided.
摘要翻译：提供常闭JFET。常关的JFET包括第一导电类型的沟道区，与沟道区邻接的第二导电类型的浮动半导体区以及与浮置半导体区邻接的第一导电类型的接触区。浮置半导体区域布置在接触区域和沟道区域之间。此外，提供常闭半导体开关。

5. 发明授权

US08951606B2 Method for producing a component by calculating a load line of the component 有权
标题翻译：通过计算部件的负载线来制造部件的方法
公开(公告)号：US08951606B2
公开(公告)日：2015-02-10
申请号：US13577876
申请日：2011-01-29
申请人： Manuel H. Hertter , Andreas Jakimov , Marcin Olbrich , Mihaela-Sorina Seitz , Juergen Kraus , Bertram Kopperger , Klaus Broichhausen , Hans Banhirl , Erwin Bayer , Wolfgang Werner , Eberhard Knodel
发明人： Manuel H. Hertter , Andreas Jakimov , Marcin Olbrich , Mihaela-Sorina Seitz , Juergen Kraus , Bertram Kopperger , Klaus Broichhausen , Hans Banhirl , Erwin Bayer , Wolfgang Werner , Eberhard Knodel
IPC分类号： B05D1/02 , B05D1/32 , C23C24/04 , F01D5/28
CPC分类号： B05D1/02 , C23C24/04 , F01D5/288 , Y10T428/239 , Y10T428/24 , Y10T428/24479
摘要： A method for producing a component is disclosed. The method includes calculating a load line of the component as a result of a load to be absorbed by the component and applying a layer on a core by gas dynamic cold spraying, where the layer has a layer section and where the layer section runs along the calculated load line.
摘要翻译：公开了一种制造组件的方法。该方法包括计算作为由部件吸收的负荷的结果的部件的负荷线，并且通过气体动态冷喷涂在芯上施加层，其中该层具有层部分，并且层部分沿着计算负载线。

6. 发明授权

US08533922B2 Stud mounting machine 有权
标题翻译：螺柱安装机
公开(公告)号：US08533922B2
公开(公告)日：2013-09-17
申请号：US12986616
申请日：2011-01-07
申请人： Jochen Hain , Alexander Schug , Karl-Heinz Briel , Markus Feierabend , Michael Schneider , Frank Rosemann , Wolfgang Werner , Harald Knetsch
发明人： Jochen Hain , Alexander Schug , Karl-Heinz Briel , Markus Feierabend , Michael Schneider , Frank Rosemann , Wolfgang Werner , Harald Knetsch
IPC分类号： B23Q7/04
CPC分类号： B65G51/02 , B23K9/201 , B23K9/206 , B23K11/0053 , B23P19/006 , Y10T29/53783 , Y10T29/53909 , Y10T29/53943 , Y10T29/53952 , Y10T29/53961 , Y10T29/53978 , Y10T29/53987 , Y10T29/53991
摘要： A holding device for holding a stud, which includes a radially projecting flange in a securing position, comprises a collet component including a hollow tubular insertion section defining an insertion axis, and a clamping section operable to exert a radially inwardly directed clamping force for clamping the stud. A securing device is arranged on the insertion section and includes a securing sleeve formed of plurality of separate securing-sleeve sections that are radially movable relative to one another. A clearance space is defined between a bottom end of the securing-sleeve sections and a top end of the clamping section, and the clearance space is operable for holding a flange of a stud in the securing position.
摘要翻译：用于保持螺栓的保持装置，其包括在固定位置的径向突出的凸缘，包括夹头部件，其包括限定插入轴线的中空管状插入部分和可操作以施加径向向内定向的夹紧力的夹紧部分，螺柱固定装置布置在插入部分上，并且包括由可相对于彼此径向移动的多个单独的固定套筒部分形成的固定套筒。在固定套筒部分的底端和夹紧部分的顶端之间限定间隙空间，并且间隙空间可操作用于将螺柱的凸缘保持在固定位置。

7. 发明申请

US20130084421A1 METHOD FOR PRODUCING A COMPONENT AND SUCH A COMPONENT 有权
标题翻译：用于生产组分和其组分的方法
公开(公告)号：US20130084421A1
公开(公告)日：2013-04-04
申请号：US13577876
申请日：2011-01-29
申请人： Manuel H. Hertter , Andreas Jakimov , Marcin Olbrich , Mihaela-Sorina Seitz , Juergen Kraus , Bertram Kopperger , Klaus Broichhausen , Hans Banhirl , Erwin Bayer , Wolfgang Werner , Eberhard Knodel
发明人： Manuel H. Hertter , Andreas Jakimov , Marcin Olbrich , Mihaela-Sorina Seitz , Juergen Kraus , Bertram Kopperger , Klaus Broichhausen , Hans Banhirl , Erwin Bayer , Wolfgang Werner , Eberhard Knodel
IPC分类号： B05D1/02
CPC分类号： B05D1/02 , C23C24/04 , F01D5/288 , Y10T428/239 , Y10T428/24 , Y10T428/24479
摘要： The invention relates to a component, which has a layer applied by gas dynamic cold spray, said layer having at, least one layer section or a reinforcing element, the material and orientation of which are selected according to a load line, and to a method for producing such a component by gas dynamic cold spray.
摘要翻译：本发明涉及一种具有通过气体动态冷喷涂施加的层的部件，所述层具有根据负载线选择其材料和取向的至少一个层部分或增强元件，并且涉及一种方法用于通过气体动态冷喷雾生产这种组分。

8. 发明申请

US20120019284A1 Normally-Off Field Effect Transistor, a Manufacturing Method Therefor and a Method for Programming a Power Field Effect Transistor 审中-公开
标题翻译：常关场效应晶体管及其制造方法以及功率场效应晶体管编程方法
公开(公告)号：US20120019284A1
公开(公告)日：2012-01-26
申请号：US12843181
申请日：2010-07-26
申请人： Anton Mauder , Helmut Strack , Wolfgang Werner
发明人： Anton Mauder , Helmut Strack , Wolfgang Werner
IPC分类号： H03K19/094 , H01L21/336 , H01L29/792 , H01L29/78
CPC分类号： H01L29/7828 , H01L29/0623 , H01L29/1608 , H01L29/2003 , H01L29/402 , H01L29/408 , H01L29/51 , H01L29/513 , H01L29/66068 , H01L29/66666 , H01L29/7787 , H01L29/7838 , H01L29/788 , H01L29/792
摘要： A normally-off power field-effect transistor semiconductor structure is provided. The structure includes a channel, a source electrode, a gate electrode and trapped charges which arranged between the gate electrode and the channel such that the channel is in an off-state when the source electrode and the gate electrode are on the same electric potential. Further, a method for forming a semiconductor device and a method for programming a power field effect transistor are provided.
摘要翻译：提供了常关的功率场效应晶体管半导体结构。该结构包括沟道，源电极，栅电极和被布置在栅电极和沟道之间的俘获电荷，使得当源电极和栅电极处于相同电位时，沟道处于截止状态。此外，提供了一种用于形成半导体器件的方法和用于编程功率场效应晶体管的方法。

9. 发明授权

US07714365B2 Semiconductor component with Schottky zones in a drift zone 有权
标题翻译：在漂移区具有肖特基带的半导体元件
公开(公告)号：US07714365B2
公开(公告)日：2010-05-11
申请号：US12034810
申请日：2008-02-21
申请人： Wolfgang Werner
发明人： Wolfgang Werner
IPC分类号： H01L29/80
CPC分类号： H01L29/7802 , H01L29/0623 , H01L29/47 , H01L29/66136 , H01L29/66143 , H01L29/66712 , H01L29/66734 , H01L29/7395 , H01L29/7397 , H01L29/7813 , H01L29/7816 , H01L29/861 , H01L29/872
摘要： A description is given of a semiconductor component comprising a drift zone of a first conduction type and at least one Schottky metal zone arranged in the drift zone, and of a method for producing a semiconductor component.
摘要翻译：给出了包括第一导电类型的漂移区和布置在漂移区中的至少一个肖特基金属区的半导体组件以及半导体组件的制造方法的描述。

10. 发明授权

US07511336B2 Vertical trench transistor 有权
标题翻译：垂直沟槽晶体管
公开(公告)号：US07511336B2
公开(公告)日：2009-03-31
申请号：US11287154
申请日：2005-11-25
申请人： Franz Hirler , Wolfgang Werner , Joachim Krumery
发明人： Franz Hirler , Wolfgang Werner , Joachim Krumery
IPC分类号： H01L29/94
CPC分类号： H01L29/7813 , H01L29/0878 , H01L29/1095 , H01L29/41766 , H01L29/42368 , H01L29/7806
摘要： A vertical trench transistor has a first electrode, a second electrode and also a semiconductor body arranged between the first and second electrodes, there being formed in the semiconductor body a plurality of transistor cells comprising source region, body region, drift region and gate electrode and also contact holes for making contact with the source and body regions, contact being made with the source and body regions by means of the first electrode, and at least the bottom of each contact hole adjoining at least one drift region, so that Schottky contacts between the first electrode and corresponding drift regions are formed at the bottoms of the contact holes. The dimensions and configurations of the body regions or of the body contact regions optionally arranged between body regions and contact holes are chosen in such a way as to avoid excessive increases in electric fields at the edges of the contact hole bottoms.
摘要翻译：垂直沟槽晶体管具有第一电极，第二电极和布置在第一和第二电极之间的半导体本体，在半导体本体中形成多个晶体管单元，其包括源极区域，体区域，漂移区域和栅极电极，以及还接触用于与源区和主体区接触的孔，借助于第一电极与源极和主体区进行接触，并且至少每个接触孔的底部与至少一个漂移区相邻，使得肖特基接触在第一电极和相应的漂移区形成在接触孔的底部。选择布置在主体区域和接触孔之间的身体区域或身体接触区域的尺寸和结构被选择为避免接触孔底部边缘处的电场过度增加。

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