专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07511336B2 Vertical trench transistor 有权
标题翻译：垂直沟槽晶体管
公开(公告)号：US07511336B2
公开(公告)日：2009-03-31
申请号：US11287154
申请日：2005-11-25
申请人： Franz Hirler , Wolfgang Werner , Joachim Krumery
发明人： Franz Hirler , Wolfgang Werner , Joachim Krumery
IPC分类号： H01L29/94
CPC分类号： H01L29/7813 , H01L29/0878 , H01L29/1095 , H01L29/41766 , H01L29/42368 , H01L29/7806
摘要： A vertical trench transistor has a first electrode, a second electrode and also a semiconductor body arranged between the first and second electrodes, there being formed in the semiconductor body a plurality of transistor cells comprising source region, body region, drift region and gate electrode and also contact holes for making contact with the source and body regions, contact being made with the source and body regions by means of the first electrode, and at least the bottom of each contact hole adjoining at least one drift region, so that Schottky contacts between the first electrode and corresponding drift regions are formed at the bottoms of the contact holes. The dimensions and configurations of the body regions or of the body contact regions optionally arranged between body regions and contact holes are chosen in such a way as to avoid excessive increases in electric fields at the edges of the contact hole bottoms.
摘要翻译：垂直沟槽晶体管具有第一电极，第二电极和布置在第一和第二电极之间的半导体本体，在半导体本体中形成多个晶体管单元，其包括源极区域，体区域，漂移区域和栅极电极，以及还接触用于与源区和主体区接触的孔，借助于第一电极与源极和主体区进行接触，并且至少每个接触孔的底部与至少一个漂移区相邻，使得肖特基接触在第一电极和相应的漂移区形成在接触孔的底部。选择布置在主体区域和接触孔之间的身体区域或身体接触区域的尺寸和结构被选择为避免接触孔底部边缘处的电场过度增加。

2. 发明申请

US20060138533A1 Vertical trench transistor 有权
公开(公告)号：US20060138533A1
公开(公告)日：2006-06-29
申请号：US11287154
申请日：2005-11-25
申请人： Franz Hirler , Wolfgang Werner , Joachim Krumery
发明人： Franz Hirler , Wolfgang Werner , Joachim Krumery
IPC分类号： H01L29/94 , H01L21/336
CPC分类号： H01L29/7813 , H01L29/0878 , H01L29/1095 , H01L29/41766 , H01L29/42368 , H01L29/7806
摘要： A vertical trench transistor has a first electrode, a second electrode and also a semiconductor body arranged between the first and second electrodes, there being formed in the semiconductor body a plurality of transistor cells comprising source region, body region, drift region and gate electrode and also contact holes for making contact with the source and body regions, contact being made with the source and body regions by means of the first electrode, and at least the bottom of each contact hole adjoining at least one drift region, so that Schottky contacts between the first electrode and corresponding drift regions are formed at the bottoms of the contact holes. The dimensions and configurations of the body regions or of the body contact regions optionally arranged between body regions and contact holes are chosen in such a way as to avoid excessive increases in electric fields at the edges of the contact hole bottoms.

3. 发明授权

US06465843B1 MOS-transistor structure with a trench-gate-electrode and a limited specific turn-on resistance and method for producing an MOS-transistor structure 有权
标题翻译：具有沟槽栅电极的MOS晶体管结构和有限的特定导通电阻以及用于制造MOS晶体管结构的方法
公开(公告)号：US06465843B1
公开(公告)日：2002-10-15
申请号：US09701291
申请日：2001-04-27
申请人： Franz Hirler , Wolfgang Werner
发明人： Franz Hirler , Wolfgang Werner
IPC分类号： H01L2976
CPC分类号： H01L29/7813 , H01L29/0634 , H01L29/0878 , H01L29/1095
摘要： MOS transistor structure having a trench gate electrode and a reduced on resistance, and methods for fabricating a MOS transistor structure A MOS transistor structure having a trench gate electrode and a reduced on resistance is described, the integral of the doping concentration of the body region in the lateral direction between two adjacent drift regions being greater than or equal to the integral of the doping concentration in a drift region in the same lateral direction. Furthermore, methods for fabricating a MOS transistor structure are disclosed, body regions and drift regions being produced by epitaxial growth and implantation, repeated epitaxial growth or by filling trenches with doped conduction material.
摘要翻译：描述了具有沟槽栅电极和导通电阻的MOS晶体管结构以及用于制造MOS晶体管结构的方法具有沟槽栅极和导通电阻的MOS晶体管结构，其中体区的掺杂浓度的积分两个相邻漂移区域之间的横向方向大于或等于在相同横向方向上的漂移区域中的掺杂浓度的积分。此外，公开了用于制造MOS晶体管结构的方法，通过外延生产体区和漂移区生长和植入，重复外延生长或通过用掺杂导电材料填充沟槽。

4. 发明授权

US6147381A Field effect-controllable semiconductor component 有权
标题翻译：场效应可控半导体元件
公开(公告)号：US6147381A
公开(公告)日：2000-11-14
申请号：US187501
申请日：1998-11-06
申请人： Franz Hirler , Frank Pfirsch , Wolfgang Werner
发明人： Franz Hirler , Frank Pfirsch , Wolfgang Werner
IPC分类号： H01L29/78 , H01L29/06 , H01L29/08 , H01L29/10 , H01L29/739 , H01L29/72
CPC分类号： H01L29/0623 , H01L29/0619 , H01L29/7395 , H01L29/0847
摘要： A field effect-controllable semiconductor component, such as a new IGBT using planar technology, includes a shielding zone disposed about a base zone, resulting in elevation of a minority charge carrier density at a cathode side of the IGBT, leading to a reduction of forward voltage. The effect of a drift field produced due to a concentration gradient between the shielding zone and the base zone is that the inner zone no longer acts as a sink for the minority charge carriers. In order to ensure that the breakdown voltage of the IGBT is not reduced by the incorporation of the shielding zone, a non-connected, floating region of high conductivity is disposed in the region of the inner zone. A lower edge of the non-connected, floating region is deeper in the inner zone than a lower edge of the shielding zone. The non-connected, floating region has a conduction type opposite that of the shielding zone and the inner zone.
摘要翻译：诸如使用平面技术的新型IGBT的场效应可控半导体部件包括围绕基极区设置的屏蔽区域，导致IGBT的阴极侧的少量电荷载流子密度升高，导致向前的减少电压。由于屏蔽区域和基极区域之间的浓度梯度而产生的漂移场的影响是内部区域不再充当少量电荷载流子的吸收器。为了确保IGBT的击穿电压不被并入屏蔽区域而降低，在内部区域中设置高导电性的非连接浮动区域。非连接的浮动区域的下边缘在内区域比屏蔽区域的下边缘更深。非连接的浮动区域具有与屏蔽区域和内部区域相反的导电类型。

5. 发明授权

US07880224B2 Semiconductor component having discontinuous drift zone control dielectric arranged between drift zone and drift control zone and a method of making the same 有权
标题翻译：具有布置在漂移区和漂移控制区之间的不连续漂移区控制电介质的半导体元件及其制造方法
公开(公告)号：US07880224B2
公开(公告)日：2011-02-01
申请号：US12019750
申请日：2008-01-25
申请人： Wolfgang Werner , Franz Hirler
发明人： Wolfgang Werner , Franz Hirler
IPC分类号： H01L29/76 , H01L21/336
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0653 , H01L29/0878 , H01L29/405 , H01L29/407 , H01L29/42356 , H01L29/4236 , H01L29/4916 , H01L29/7813
摘要： Semiconductor component including a drift region and a drift control region. One embodiment provides a drift zone and a drift control zone. A drift control zone dielectric is arranged between the first drift zone and the drift control zone and has at least two sections arranged at a distance from one another in a current flow direction of the component. At least one separating structure is arranged between the drift zone and the drift control zone in the region of an interruption, defined by the at least two sections, of the drift control zone dielectric and has at least one PN junction.
摘要翻译：半导体元件包括漂移区和漂移控制区。一个实施例提供漂移区和漂移控制区。漂移控制区电介质布置在第一漂移区和漂移控制区之间，并且具有至少两个部分，其在组件的当前流动方向上彼此间隔一定距离。在由漂移控制区介质的至少两个部分限定的中断区域中，在漂移区和漂移控制区之间布置至少一个分离结构，并具有至少一个PN结。

6. 发明授权

US07655975B2 Power trench transistor 有权
标题翻译：功率沟槽晶体管
公开(公告)号：US07655975B2
公开(公告)日：2010-02-02
申请号：US11264756
申请日：2005-10-31
申请人： Franz Hirler , Wolfgang Werner , Markus Zundel , Frank Pfirsch
发明人： Franz Hirler , Wolfgang Werner , Markus Zundel , Frank Pfirsch
IPC分类号： H01L29/94
CPC分类号： H01L29/7811 , H01L29/0696 , H01L29/0878 , H01L29/407 , H01L29/42368 , H01L29/7813
摘要： A power trench transistor comprises a semiconductor body in which a cell array and an edge region surrounding the cell array are formed. First edge trenches are formed within the edge region. The first edge trenches contain field electrodes and the longitudinal orientations of the first edge trenches run from the cell array towards the edge of the trench transistor.
摘要翻译：功率沟槽晶体管包括其中形成有单元阵列和围绕单元阵列的边缘区域的半导体本体。第一边缘沟槽形成在边缘区域内。第一边缘沟槽包含场电极，并且第一边缘沟槽的纵向取向从单元阵列朝向沟槽晶体管的边缘延伸。

7. 发明申请

US20060118864A1 Power trench transistor 有权
标题翻译：功率沟槽晶体管
公开(公告)号：US20060118864A1
公开(公告)日：2006-06-08
申请号：US11264756
申请日：2005-10-31
申请人： Franz Hirler , Wolfgang Werner , Markus Zundel , Frank Pfirsch
发明人： Franz Hirler , Wolfgang Werner , Markus Zundel , Frank Pfirsch
IPC分类号： H01L29/76
CPC分类号： H01L29/7811 , H01L29/0696 , H01L29/0878 , H01L29/407 , H01L29/42368 , H01L29/7813
摘要： A power trench transistor comprises a semiconductor body in which a cell array and an edge region surrounding the cell array are formed. First edge trenches are formed within the edge region. The first edge trenches contain field electrodes and the longitudinal orientations of the first edge trenches run from the cell array towards the edge of the trench transistor.
摘要翻译：功率沟槽晶体管包括其中形成有单元阵列和围绕单元阵列的边缘区域的半导体本体。第一边缘沟槽形成在边缘区域内。第一边缘沟槽包含场电极，并且第一边缘沟槽的纵向取向从单元阵列朝向沟槽晶体管的边缘延伸。

8. 发明授权

US10211057B2 Transistor component with reduced short-circuit current 有权
公开(公告)号：US10211057B2
公开(公告)日：2019-02-19
申请号：US13197903
申请日：2011-08-04
申请人： Franz Hirler , Anton Mauder , Thomas Raker , Hans-Joachim Schulze , Wolfgang Werner
发明人： Franz Hirler , Anton Mauder , Thomas Raker , Hans-Joachim Schulze , Wolfgang Werner
IPC分类号： H01L21/26 , H01L29/08 , H01L29/78 , H01L21/265 , H01L29/739 , H01L29/04 , H01L29/06 , H01L29/10 , H01L29/165 , H01L29/167 , H01L29/32
摘要： A transistor component includes in a semiconductor body a source zone and a drift zone of a first conduction type, and a body zone of a second conduction type complementary to the first conduction type, the body zone arranged between the drift zone and the source zone. The transistor component further includes a source electrode in contact with the source zone and the body zone, a gate electrode adjacent the body zone and dielectrically insulated from the body zone by a gate dielectric layer, and a diode structure connected between the drift zone and the source electrode. The diode structure includes a first emitter zone adjoining the drift zone in the semiconductor body, and a second emitter zone of the first conduction type adjoining the first emitter zone. The second emitter zone is connected to the source electrode and has an emitter efficiency γ of less than 0.7.

9. 发明申请

US20120037955A1 Transistor Component with Reduced Short-Circuit Current 审中-公开
标题翻译：具有降低短路电流的晶体管组件
公开(公告)号：US20120037955A1
公开(公告)日：2012-02-16
申请号：US13197903
申请日：2011-08-04
申请人： Franz Hirler , Anton Mauder , Thomas Raker , Hans-Joachim Schulze , Wolfgang Werner
发明人： Franz Hirler , Anton Mauder , Thomas Raker , Hans-Joachim Schulze , Wolfgang Werner
IPC分类号： H01L27/06
CPC分类号： H01L21/26506 , H01L21/26513 , H01L29/04 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/165 , H01L29/167 , H01L29/32 , H01L29/7397 , H01L29/7804 , H01L29/7806 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： A transistor component includes in a semiconductor body a source zone and a drift zone of a first conduction type, and a body zone of a second conduction type complementary to the first conduction type, the body zone arranged between the drift zone and the source zone. The transistor component further includes a source electrode in contact with the source zone and the body zone, a gate electrode adjacent the body zone and dielectrically insulated from the body zone by a gate dielectric layer, and a diode structure connected between the drift zone and the source electrode. The diode structure includes a first emitter zone adjoining the drift zone in the semiconductor body, and a second emitter zone of the first conduction type adjoining the first emitter zone. The second emitter zone is connected to the source electrode and has an emitter efficiency γ of less than 0.7.
摘要翻译：晶体管部件在半导体本体中包括源极区和第一导电类型的漂移区，以及与第一导电类型互补的第二导电类型的体区，布置在漂移区和源极区之间的体区。所述晶体管部件还包括与所述源极区域和所述主体区域接触的源极电极，与所述主体区域相邻的栅极电极，并且通过栅极介电层与所述主体区域介电绝缘，以及连接在所述漂移区域源电极。二极管结构包括与半导体主体中的漂移区相邻的第一发射区和与第一发射区邻接的第一导电类型的第二发射极区。第二发射极区域与源极连接，发射极效率γ小于0.7。

10. 发明授权

US06649974B2 Field-effect controlled semiconductor device having a non-overlapping gate electrode and drift region and its manufacturing method 有权
标题翻译：具有非重叠栅电极和漂移区的场效应控制半导体器件及其制造方法
公开(公告)号：US06649974B2
公开(公告)日：2003-11-18
申请号：US10175593
申请日：2002-06-19
申请人： Wolfgang Werner , Franz Hirler
发明人： Wolfgang Werner , Franz Hirler
IPC分类号： H01L2976
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0847 , H01L29/1095 , H01L29/41766 , H01L29/42376
摘要： A semiconductor component includes a first connection zone of a first conductivity type for providing a contact at a first side of a semiconductor body and a second connection zone of the first conductivity type for providing a contact at the second side of the semiconductor body. A drift zone adjoins the first connection zone and extends in a vertical direction of the semiconductor body as far as the second side of the semiconductor body. A body zone of a second conductivity type is disposed between the second connection zone and the first connection zone or the drift zone. A control electrode is insulated from the semiconductor body and disposed above the body zone such that the control electrode substantially does not overlap with the drift zone and the second connection zone in a lateral direction. A method for manufacturing a semiconductor component is also provided.
摘要翻译：半导体部件包括：第一导电类型的第一连接区域，用于在半导体主体的第一侧提供接触;以及第一导电类型的第二连接区域，用于在半导体主体的第二侧提供接触。漂移区毗邻第一连接区，并且在半导体本体的垂直方向上延伸至半导体本体的第二侧。第二导电类型的主体区域设置在第二连接区域和第一连接区域或漂移区域之间。控制电极与半导体本体绝缘并且设置在主体区域之上，使得控制电极在横向上基本上不与漂移区和第二连接区重叠。还提供了一种制造半导体部件的方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式