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1. 发明申请

US20040055636A1 Method and apparatus for fluid flow control 审中-公开
标题翻译：流体流量控制的方法和装置
公开(公告)号：US20040055636A1
公开(公告)日：2004-03-25
申请号：US10621042
申请日：2003-07-15
申请人： APPLIED MATERIALS INC.
发明人： Juan Carlos Rocha-Alvarez , Chen-An Chen , Shankar Venkataraman
IPC分类号： G05D011/00
CPC分类号： G05D7/0635 , Y10T137/0363 , Y10T137/2524 , Y10T137/2529 , Y10T137/265
摘要： The invention provides a method and apparatus to control fluids such as process gases into two or more substrate process chambers. In one aspect, the gas flow from a first supply to a first processing region is used to control the gas flow of a second supply to a second processing region where the total gas flow is about equal to the total of the gas flows into both the first and second processing regions. In another aspect, the gas flow rate from the first supply for the first processing region is about equal to the gas flow rate for the second supply to the second processing region.
摘要翻译：本发明提供了一种方法和装置，用于将诸如工艺气体的流体控制成两个或多个衬底处理室。在一个方面，从第一供应到第一处理区域的气体流被用于控制第二供应源到第二处理区域的气体流量，其中总气体流量大约等于气体流入二者的总和第一和第二处理区域。另一方面，来自第一处理区域的第一供应源的气体流量大约等于第二供给到第二处理区域的气体流量。

2. 发明申请

US20030104708A1 CVD plasma assisted lower dielectric constant sicoh film 失效
公开(公告)号：US20030104708A1
公开(公告)日：2003-06-05
申请号：US10302240
申请日：2002-11-22
申请人： Applied Materials, Inc.
发明人： Seon-Mee Cho , Peter Wai-Man Lee , Chi-I Lang , Dian Sugiarto , Chen-An Chen , Li-Qun Xia , Shankar Venkataraman , Ellie Yieh
IPC分类号： H01L021/31
CPC分类号： H01L21/02126 , C23C16/30 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/31633 , Y10S438/931 , Y10T428/31909
摘要： A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.

3. 发明申请

US20020081395A1 Corrosion resistant coating 审中-公开
公开(公告)号：US20020081395A1
公开(公告)日：2002-06-27
申请号：US10081312
申请日：2002-02-21
申请人： Applied Materials, Inc.
发明人： Won Bang , Chen-An Chen , Shankar Venkataraman , Ajay Bhatnagar
IPC分类号： H05H001/24
CPC分类号： C23C14/5806 , C23C14/0694 , C23C16/4404 , H01J37/32477 , H01J37/32559
摘要： A corrosion resistant part comprising a protective coating formed upon a component part. The protective coating comprises magnesium fluoride, which is substantially pure and substantially dense. Preferably, the coating is at least about 99% pure and at least about 85% dense. For example, such a coating can be formed upon the component part at a temperature of at least about 250null C. and a pressure of not more than about 1null10null5 torr. The resulting coating is effective in protecting the surfaces of an aluminum nitride heater against corrosion within a fluorine-containing environment inside a chemical vapor deposition chamber.

4. 发明申请

US20030143328A1 Apparatus and method for plasma assisted deposition 失效
标题翻译：用于等离子体辅助沉积的装置和方法
公开(公告)号：US20030143328A1
公开(公告)日：2003-07-31
申请号：US10197940
申请日：2002-07-16
申请人： Applied Materials, Inc.
发明人： Chen-An Chen , Avgerinos Gelatos , Michael X. Yang , Ming Xi , Mark M. Hytros
IPC分类号： C23C016/00 , H01L021/306
CPC分类号： C23C16/06 , C23C16/34 , C23C16/42 , C23C16/452 , C23C16/4554 , C23C16/45544 , C23C16/45565 , C23C16/515 , H01J37/32082 , H01J37/3244 , H01L21/28556 , H01L21/28562 , H01L21/28568 , H01L21/3122 , H01L21/3127 , H01L21/76843
摘要： Embodiments of the present invention relate to an apparatus and method of plasma assisted deposition by generation of a plasma adjacent a processing region. One embodiment of the apparatus comprises a substrate processing chamber including a top shower plate, a power source coupled to the top shower plate, a bottom shower plate, and an insulator disposed between the top shower plate and the bottom shower plate. In one aspect, the power source is adapted to selectively provide power to the top shower plate to generate a plasma from the gases between the top shower plate and the bottom shower plate. In another embodiment, a power source is coupled to the top shower plate and the bottom shower plate to generate a plasma between the bottom shower plate and the substrate support. One embodiment of the method comprises performing in a single chamber one or more of the processes including, but not limited to, cyclical layer deposition, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition; plasma-enhanced chemical vapor deposition; and/or chemical vapor deposition.
摘要翻译：本发明的实施例涉及通过在处理区域附近产生等离子体辅助沉积的装置和方法。该装置的一个实施例包括基板处理室，其包括顶部喷淋板，耦合到顶部淋浴板的电源，底部淋浴板和布置在顶部淋浴板和底部淋浴板之间的绝缘体。一方面，电源适于选择性地向顶部喷淋板提供电力，以从顶部喷淋板和底部淋浴板之间的气体产生等离子体。在另一个实施例中，电源耦合到顶部喷淋板和底部淋浴板，以在底部喷淋板和基板支撑件之间产生等离子体。该方法的一个实施方案包括在单个室中进行一个或多个过程，包括但不限于循环层沉积，组合循环层沉积和等离子体增强化学气相沉积; 等离子体增强化学气相沉积; 和/或化学气相沉积。

5. 发明申请

US20030192568A1 Method for cleaning a process chamber 失效
标题翻译：清洁处理室的方法
公开(公告)号：US20030192568A1
公开(公告)日：2003-10-16
申请号：US10122481
申请日：2002-04-12
申请人： Applied Materials, Inc.
发明人： Yi Zheng , Vinita Singh , Srinivas D. Nemani , Chen-An Chen , Ju-Hyung Lee , Shankar Venkataraman
IPC分类号： B08B006/00
CPC分类号： C23C16/4405 , B08B7/00 , Y10S134/902 , Y10S438/905
摘要： Methods and apparatus for cleaning deposition chambers are presented. The cleaning methods include the use of a remote plasma source to generate reactive species from a cleaning gas to clean deposition chambers. A flow of helium or argon may be used during chamber cleaning. Radio frequency power may also be used in combination with a remote plasma source to clean deposition chambers.
摘要翻译：介绍了沉积室清洗方法和设备。清洁方法包括使用远程等离子体源从清洁气体产生反应物质以清洁沉积室。在室清洁期间可以使用氦气或氩气流。射频功率还可以与远程等离子体源组合使用以清洁沉积室。

6. 发明申请

US20020190051A1 LOW PROFILE THICK FILM HEATERS IN MULTI-SLOT BAKE CHAMBER 失效
标题翻译：低型薄壁加热器在多槽烤箱
公开(公告)号：US20020190051A1
公开(公告)日：2002-12-19
申请号：US09882769
申请日：2001-06-15
申请人： Applied Materials, Inc.
发明人： Yen-Kun Victor Wang , Mark Fodor , Chen-An Chen , Himanshu Pokharna , Son T. Nguyen , Kelly Fong , Inna Shmurun
IPC分类号： F27B005/14 , F27D011/00
CPC分类号： H01L21/67748 , C23C16/0209 , C23C16/54 , C30B25/10 , C30B31/14 , H01L21/68
摘要： A heating chamber assembly for heating or maintaining the temperature of at least one wafer, employs thick film heater plates stacked at an appropriate distance to form a slot between each pair of adjacent heater plate surfaces. The heating chamber assembly may be employed adjacent one or more processing chambers to form a preheat station separate from the processing chambers, or may be incorporated in the load lock of one or more such processing chambers. The thick film heater plates are more efficient and have a better response time than conventional heat plates. A chamber surrounding the stack of heater plates is pressure sealable and may include a purge gas inlet for supply purge gas thereto under pressure. A door to the chamber opens to allow wafers to be inserted or removed and forms a pressure seal upon closing. The slots in the stack are alignable with the door for loading and unloading of wafers. The stack is mounted on a drive shaft that extends through the chamber where it interfaces with a drive that traverses the drive shaft in and out of the chamber to align various slots as desired.
摘要翻译：用于加热或保持至少一个晶片的温度的加热室组件使用以适当距离堆叠的厚膜加热器板，以在每对相邻的加热器板表面之间形成狭槽。加热室组件可以在一个或多个处理室附近使用以形成与处理室分离的预热站，或者可以结合在一个或多个这样的处理室的装载锁中。厚膜加热器板比传统加热板更有效，响应时间更长。围绕堆叠的加热器板的室是可压力密封的，并且可以包括用于在压力下向其供应吹扫气体的吹扫气体入口。通向室的门打开以允许晶片被插入或移除，并且在关闭时形成压力密封。堆叠中的槽可与门对准，用于装载和卸载晶片。该堆叠安装在驱动轴上，该驱动轴延伸穿过该室，在该驱动轴处与驱动轴相接合，该驱动器穿过驱动轴进出腔室，以根据需要对准各种槽。

7. 发明申请

US20030019428A1 Chemical vapor deposition chamber 审中-公开
标题翻译：化学气相沉积室
公开(公告)号：US20030019428A1
公开(公告)日：2003-01-30
申请号：US10134206
申请日：2002-04-26
申请人： APPLIED MATERIALS, INC.
发明人： Vincent W. Ku , Anzhong Chang , Anh N. Nguyen , Ming Xi , Xiaoxiong Yuan , Juan B. Tuscano JR. , Lawrence C. Lei , Seshadri Ganguli , Michael Yang , Chen-An Chen , Ling Chen
IPC分类号： C23C016/00 , C23F001/00 , H01L021/306
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45512
摘要： A processing chamber is adapted to perform a deposition process on a substrate. The chamber includes a pedestal adapted to hold a substrate during deposition and a gas mixing and distribution assembly mounted above the pedestal. The gas mixing and distribution assembly includes a face plate, a dispersion plate mounted above the face plate, and a mixing fixture mounted above the dispersion plate. The face plate is adapted to present an emissivity invariant configuration to the pedestal. The mixing fixture includes a mixing chamber to which a process gas is flowed and an outer chamber surrounding the mixing chamber. The processing chamber further includes an enclosure and a liner installed inside the enclosure and surrounding the pedestal. The liner defines a gap between the liner and the enclosure. The gap has a minimum width adjacent an exhaust port and a maximum width at a point that is diametrically opposite the exhaust port.
摘要翻译：处理室适于在基板上执行沉积处理。腔室包括适于在沉积期间保持基底的基座和安装在基座上方的气体混合和分配组件。气体混合分配组件包括面板，安装在面板上方的分散板和安装在分散板上方的混合夹具。面板适于向基座呈现发射率不变构型。混合夹具包括处理气体流过的混合室和围绕混合室的外室。处理室还包括外壳和安装在外壳内并围绕基座的衬垫。衬套限定了衬套和外壳之间的间隙。该间隙具有邻近排气口的最小宽度和在与排气口径向相反的点处的最大宽度。

8. 发明申请

US20030005958A1 Method and apparatus for fluid flow control 失效
标题翻译：流体流量控制的方法和装置
公开(公告)号：US20030005958A1
公开(公告)日：2003-01-09
申请号：US09895104
申请日：2001-06-29
申请人： Applied Materials, Inc.
发明人： Juan Carlos Rocha-Alvarez , Chen-An Chen , Shankar Venkataraman
IPC分类号： G05D011/00
CPC分类号： G05D7/0635 , Y10T137/0363 , Y10T137/2524 , Y10T137/2529 , Y10T137/265
摘要： The invention provides a method and apparatus to control fluids such as process gases into two or more substrate process chambers. In one aspect, the gas flow from a first supply to a first processing region is used to control the gas flow of a second supply to a second processing region where the total gas flow is about equal to the total of the gas flows into both the first and second processing regions. In another aspect, the gas flow rate from the first supply for the first processing region is about equal to the gas flow rate for the second supply to the second processing region.
摘要翻译：本发明提供了一种方法和装置，用于将诸如工艺气体的流体控制成两个或多个衬底处理室。在一个方面，从第一供应到第一处理区域的气体流被用于控制第二供应源到第二处理区域的气体流量，其中总气体流量大约等于气体流入两者的总和第一和第二处理区域。另一方面，来自第一处理区域的第一供应源的气体流量大约等于第二供给到第二处理区域的气体流量。

9. 发明申请

US20030003768A1 CVD PLASMA ASSISTED LOWER DIELECTRIC CONSTANT SICOH FILM 失效
标题翻译： CVD等离子体辅助下介电常数SICOH膜
公开(公告)号：US20030003768A1
公开(公告)日：2003-01-02
申请号：US09885985
申请日：2001-06-18
申请人： Applied Materials, Inc.
发明人： Seon-Mee Cho , Peter Wai-Man Lee , Chi-I Lang , Dian Sugiarto , Chen-An Chen , Li-Qun Xia , Shankar Venkataraman , Ellie Yieh
IPC分类号： H01L021/31
CPC分类号： H01L21/02126 , C23C16/30 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/31633 , Y10S438/931 , Y10T428/31909
摘要： A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.
摘要翻译：提供了具有约3.0或更小，优选约2.5或更小的硅 - 碳键和介电常数的低介电常数膜。通过使环状有机硅化合物和脂族有机硅化合物与氧化气体反应同时施加RF功率来沉积低介电常数膜。沉积膜的碳含量除氢原子以外约为10至约30原子百分比，优选除氢原子之外约10至约20原子％。

10. 发明申请

US20020187262A1 Purge heater design and process development for the improvement of low k film properties 失效
标题翻译：吹扫加热器设计和工艺开发，用于改善低k膜性能
公开(公告)号：US20020187262A1
公开(公告)日：2002-12-12
申请号：US09820586
申请日：2001-03-28
申请人： Applied Materials, Inc.
发明人： Juan Carlos Rocha-Alvarez , Chen-An Chen , Ellie Yieh , Shankar Venkataraman
IPC分类号： C23C016/00 , B32B009/00
CPC分类号： C23C16/45521 , C23C16/401 , C23C16/455 , C23C16/4585 , H01L21/02126 , H01L21/02211 , H01L21/02274 , H01L21/31633 , Y10T428/31
摘要： The present invention provides a method of depositing a carbon doped silicon oxide film having a low dielectric constant (k). A process gas mixture containing at least a carrier gas, an oxidizer, a carbon gas source, or combinations thereof, is supplied adjacent an edge of a substrate though a purge gas inlet in a substrate support to facilitate deposition of low k carbon doped silicon oxide film having a greater concentration of silicon oxide around the edge of the substrate than an inner portion of the substrate.
摘要翻译：本发明提供一种沉积具有低介电常数（k）的碳掺杂氧化硅膜的方法。含有至少载体气体，氧化剂，碳气体源或其组合的工艺气体混合物通过衬底支撑件中的吹扫气体入口邻近衬底的边缘提供，以便于沉积低k碳掺杂氧化硅膜比衬底的内部具有比衬底边缘更高浓度的氧化硅。

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