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1. 发明申请

US20040195229A1 Method for thermally treating substrates 有权
标题翻译：基板热处理方法
公开(公告)号：US20040195229A1
公开(公告)日：2004-10-07
申请号：US10433253
申请日：2003-07-17
发明人： Jakob Szekeresch , Peter Dress , Uwe Dietze , Werner Saule
IPC分类号： F27B005/14 , H05B001/02 , F27D011/00
CPC分类号： H01L21/67248
摘要： To increase the temperature homogeneity on the surface of a substrate that is to be thermally treated, a method for thermally treating substrates is provided, according to which the substrate is heated by several separately controllable heating elements. A desired-value profile is predefined for each of said heating elements. The method comprises the following steps: locally-analysed measurement of the temperature of the surface of the substrate that faces away from the heating elements, during the thermal treatment; determination of the temperature inhomogeneities occurring on the substrate surface; definition of new desired-value profiles based on said temperature inhomogeneities; and preparation of the new desired-value profiles for subsequent treatments.
摘要翻译：为了提高待热处理的基板的表面上的温度均匀性，提供了一种热处理基板的方法，根据该方法，基板被几个可单独控制的加热元件加热。为每个所述加热元件预定义期望值曲线。该方法包括以下步骤：在热处理期间局部分析测量衬底表面远离加热元件的温度; 确定在基板表面上发生的温度不均匀性; 基于所述温度不均匀性定义新的期望值曲线; 并为后续处理准备新的期望值曲线。

2. 发明申请

US20030210901A1 Pyrometer calibrated wafer temperature estimator 有权
标题翻译：高温计校准晶圆温度估计器
公开(公告)号：US20030210901A1
公开(公告)日：2003-11-13
申请号：US10459835
申请日：2003-06-11
发明人： James J. Donald , Ivo Raaijmakers
IPC分类号： F27B005/14
CPC分类号： H01L21/67248 , C30B25/16
摘要： A method of using a wafer temperature estimator to calibrate contact-type temperature sensor measurements that are used by a temperature controller to control substrate temperature in a high temperature processing chamber is described. Wafer temperature estimator parameters provide an estimated wafer temperature from contact-type temperature sensor measurements. The estimator parameters are refined using non-contact-type temperature sensor measurements during periods when the substrate temperature is decreasing or the heaters are off. A corresponding temperature control system includes a heater, a contact-type temperature sensor in close proximity to the substrate, and an optical pyrometer placed to read temperature directly from the substrate. A wafer temperature estimator uses the estimator parameters and measurements from the contact-type sensor to determine an estimated wafer temperature. A temperature controller reads the estimated wafer temperature and makes changes to the heater power accordingly. In one embodiment, the wafer temperature estimator comprises a nonlinear neural network system that is trained using inputs from the various sensors.
摘要翻译：描述了使用晶片温度估计器校准由温度控制器用于控制高温处理室中的衬底温度的接触式温度传感器测量的方法。晶圆温度估计器参数提供来自接触式温度传感器测量值的估计晶片温度。在衬底温度降低或加热器关闭的期间，使用非接触式温度传感器测量来精确估算器参数。相应的温度控制系统包括加热器，靠近基板的接触式温度传感器和放置以直接从基板读取温度的光学高温计。晶片温度估计器使用来自接触型传感器的估计器参数和测量来确定估计的晶片温度。温度控制器读取估计的晶片温度并相应地改变加热器功率。在一个实施例中，晶片温度估计器包括使用来自各种传感器的输入进行训练的非线性神经网络系统。

3. 发明申请

US20030121901A1 Radiant heating apparatus and discharge current detecting circuit therefor 有权
公开(公告)号：US20030121901A1
公开(公告)日：2003-07-03
申请号：US10326154
申请日：2002-12-23
发明人： Hiroshige Hata
IPC分类号： F27D011/00 , F27B005/14
CPC分类号： H01L21/67248 , H01L21/67115
摘要： A radiant heating apparatus for heating one or more workpieces, comprises at least one flash discharge lamp, a discharge circuit having a condenser, connected in series to the at least one flash discharge lamp, for supplying voltage to the at least one flash discharge lamp; and a non-contact current detecting sensor provided in the discharge circuit wherein the current detecting sensor detects in a non-contact state discharge current flowing through the discharge circuit whereby it is possible to compensate condenser deterioration and also it is possible to detect an abnormal state of the discharge circuit based on outputs from the non-contact current detecting sensor.

4. 发明申请

US20030089698A1 Hot wall rapid thermal processor 失效
公开(公告)号：US20030089698A1
公开(公告)日：2003-05-15
申请号：US10262215
申请日：2002-09-30
申请人： ASML US, Inc.
发明人： Christopher T. Ratliff , Jeffrey M. Kowalski , Taiqing Qiu
IPC分类号： F27B005/14 , F27D011/00
CPC分类号： C23C16/463 , C23C16/455 , C23C16/4584 , C30B25/10 , C30B25/14 , F27B5/14 , F27B2005/161 , F27D1/1858 , F27D2003/0075 , H01L21/67109
摘要： An apparatus for heat treatment of a wafer is disclosed. The apparatus includes a heating chamber having a heat source. A cooling chamber is positioned adjacent to the heating chamber and includes a cooling source. A wafer holder is configured to move between the cooling chamber and the heating chamber through a passageway and one or more shutters defines the size of the passageway. The one or more shutters are movable between an open position where the wafer holder can pass through the passageway and an obstructing position which defines a passageway which is smaller than the passageway defined when the shutter is in the open position.

5. 发明申请

US20030080104A1 Heat treating apparatus and method 审中-公开
标题翻译：热处理装置及方法
公开(公告)号：US20030080104A1
公开(公告)日：2003-05-01
申请号：US10267128
申请日：2002-10-07
申请人： Dainippon Screen Mfg. Co., Ltd.
发明人： Tatsufumi Kusuda
IPC分类号： F27D011/00 , H05B003/68 , F27B005/14
CPC分类号： H01L21/67115 , C30B31/14
摘要： A heat treating apparatus has an assist heating device for contacting and preheating a substrate, and a flash heating device for heating the substrate preheated by the assist heating device, to a treating temperature by irradiating the substrate with flashes of light. The assist heating device includes a heating plate having a heater, and a thermal diffuser plate formed of quartz and disposed on a surface of the heating plate opposed to the substrate. The surface of the heating plate with the thermal diffuser plate disposed thereon is formed of white aluminum nitride.
摘要翻译：热处理装置具有用于使基板接触和预热的辅助加热装置，以及通过用闪光照射基板的用于将由辅助加热装置预热的基板加热到处理温度的闪光加热装置。辅助加热装置包括具有加热器的加热板和由石英形成并设置在与基板相对的加热板的表面上的热扩散板。设置有热扩散板的加热板的表面由白色氮化铝形成。

6. 发明申请

US20030057198A1 Method and apparatus for performing baking treatment to semiconductor wafer 失效
标题翻译：对半导体晶片进行烘烤处理的方法和装置
公开(公告)号：US20030057198A1
公开(公告)日：2003-03-27
申请号：US10197598
申请日：2002-07-18
发明人： Shouzou Kobayashi , Takamitsu Furukawa , Keisuke Tanaka , Kouhei Shimoyama , Akira Watanabe , Tadashi Nishimuro , Koki Muto , Azusa Yanagisawa , Katsuo Oshima
IPC分类号： F27B005/14 , F27D011/00
CPC分类号： H01L21/67248 , H01L21/67109
摘要： An apparatus for baking a semiconductor wafer having a resist pattern thereon, comprising: a baking oven in which the semiconductor wafer is placed and heated; a first hot plate which is provided in the baking oven to heat an entire bottom surface of the semiconductor wafer; a gas supply unit which comprises a gas introducing path, through which the purge gas is introduced into the baking oven, and a gas exhaust path, through which the purge gas is exhausted out of the baking oven; and a gas temperature controller which controls a temperature of the purge gas in order that the purge gas flowing around a peripheral edge or outer portion of the wafer has a higher temperature than that around the center or inner portion of the wafer.
摘要翻译：一种用于烘烤其上具有抗蚀剂图案的半导体晶片的设备，包括：烘烤炉，其中放置和加热半导体晶片; 第一热板，设置在烘烤炉中以加热半导体晶片的整个底面; 气体供给单元，其包括气体导入路径，吹扫气体通过该气体导入路径被引入烘烤炉中;以及气体排出路径，吹扫气体通过该排气路径从烘烤炉排出; 以及气体温度控制器，其控制吹扫气体的温度，以便围绕晶片的周边边缘或外部流动的吹扫气体具有比晶片的中心或内部周围的清洁气体更高的温度。

7. 发明申请

US20030038128A1 Heating device of the light irradiation type 失效
标题翻译：光照射型加热装置
公开(公告)号：US20030038128A1
公开(公告)日：2003-02-27
申请号：US10222853
申请日：2002-08-19
申请人： Ushiodenki Kabushiki Kaisha
发明人： Shinji Suzuki
IPC分类号： F27D011/00 , F27B005/14
CPC分类号： H01L21/67115 , C30B25/105 , C30B31/14
摘要： A heating device of the light irradiation type in which uniform illuminance can be obtained without placing a single end lamp in the middle of the light source part is achieved providing a light source part in which circular lamps are arranged concentrically to one another with a mirror in the center of the circular lamps. The mirror is convex toward the workpiece and reflects the light emitted from the innermost circular lamp located closest to the center area so that, without placing a single end lamp in the middle area, the reduction of illuminance in the middle area of the irradiated surface is reduced. Furthermore, the reflector can be made conical, and in this way, the light from the lamps can be emitted with high efficiency onto the workpiece surface.
摘要翻译：实现了在不将单端灯放置在光源部分中间的情况下可获得均匀照度的照射型加热装置，其中提供了一种光源部分，其中圆形灯彼此同心地布置有反射镜圆形灯的中心。反射镜朝向工件凸出，并且反射从位于最中心区域的最内圆形灯发射的光，使得在不将单端灯放置在中间区域中的情况下，照射表面的中间区域中的照度的减小是减少此外，反射器可以制成圆锥形，以这种方式，来自灯的光可以高效地发射到工件表面上。

8. 发明申请

US20030038127A1 System and method of fast ambient switching for rapid thermal processing 失效
标题翻译：快速热处理快速环境切换的系统和方法
公开(公告)号：US20030038127A1
公开(公告)日：2003-02-27
申请号：US09938257
申请日：2001-08-23
发明人： Yong Liu , Jeffrey P. Hebb , William Francis Drislane
IPC分类号： F27B005/14
CPC分类号： C23C16/45542 , C23C16/45544 , C23C16/4557 , C23C16/45591 , C23C16/46 , C30B25/14 , C30B31/16 , H01L21/67109 , H01L21/67115 , H01L21/6719
摘要： A method and apparatus for thermal processing of a workpiece is provided. The time taken for a processing gas to be purged, or switched, during one or more processing steps is significantly reduced for thermal processing systems. The thermal processing system includes a heating chamber in accordance with one example embodiment of the present invention. A small-volume workpiece enclosure is disposed about the workpiece. A translation mechanism, e.g., in the form of a positioning assembly, supports the small-volume workpiece enclosure for moving the small-volume workpiece enclosure and the workpiece within the heating chamber. The small-volume workpiece enclosure enables the use of relatively smaller amounts of process (ambient) gases, and decreases the purge time of such gases. The heating chamber can have at least one of a thermal radiation intensity gradient and a temperature gradient for thermally processing the workpiece. The heating chamber can have one or more heating elements disposed about the heating chamber.
摘要翻译：提供了一种用于工件热处理的方法和装置。在一个或多个处理步骤中处理气体被清除或切换所花费的时间对于热处理系统而言显着降低。热处理系统包括根据本发明的一个示例性实施例的加热室。围绕工件设置小体积的工件外壳。平移机构，例如以定位组件的形式，支撑小体积工件外壳，用于在加热室内移动小体积工件外壳和工件。小体积的工件外壳能够使用相对较少量的工艺（环境）气体，并减少这些气体的吹扫时间。加热室可以具有用于热加工工件的热辐射强度梯度和温度梯度中的至少一个。加热室可以具有围绕加热室设置的一个或多个加热元件。

9. 发明申请

US20020195438A1 Method for substrate thermal management 有权
公开(公告)号：US20020195438A1
公开(公告)日：2002-12-26
申请号：US10188546
申请日：2002-07-02
发明人： Dikran S. Babikian
IPC分类号： F27D011/00 , F27B005/14
CPC分类号： C23C16/463 , C23C16/46 , H01L21/67103
摘要： This invention is a thermal management method for efficient, rapid, controllable and uniform thermal management over a wide temperature range. The method integrates a thermal source, thermal sink and a thermal diffuser. According to the invention, a thermal diffuser is positioned stationary relative to the wafer surface and coupled to a thermal source and a thermal sink, which are also stationary relative to the wafer surface. The thermal sink comprises a heat-carrying media with a controllable temperature. The wafer is heated from a first processing temperature to a second processing temperature during a heating time interval and then cooled to the first processing temperature from the second processing temperature during a cooling time interval. During heating and cooling, the wafer is constantly held in a fixed position. Zonal control of the thermal source and non-uniform flow of the thermal sink enable sensitive mitigation of thermal non-uniformity on a heating surface.

10. 发明申请

US20020148824A1 Rapid thermal processing system for integrated circuits 有权
标题翻译：集成电路快速热处理系统
公开(公告)号：US20020148824A1
公开(公告)日：2002-10-17
申请号：US09836098
申请日：2001-04-17
发明人： Markus Hauf , Sing-Pin Tay , Yao Zhi Hu
IPC分类号： F27B005/14 , C23C016/00
CPC分类号： H05B3/0047 , H01L21/67115
摘要： In a rapid thermal processing system an array of heat lamps generate radiant heat for heating the surfaces of a semiconductor substrate, such as a semiconductor wafer, to a selected temperature or set of temperatures while held within an enclosed chamber. The heat lamps are surrounded individually or in groups by one or more optically transparent enclosures that isolate the heat lamps from the chamber environment and the wafer or wafers therein. The optically transparent enclosures may include associated reflectors and/or lenses to direct a higher proportion of emitted radiant heat energy from the lamps toward the semiconductor wafer(s). Thin planar quartz liners may also be interposed between the lamps and the substrate. By controlling radiant energy distribution within the chamber, and eliminating thick planar quartz windows commonly used to isolate the lamps in prior art RTP systems, higher processing rates and improved reliability are obtained.
摘要翻译：在快速热处理系统中，一组热灯产生辐射热，用于将半导体衬底（例如半导体晶片）的表面加热至选定的温度或一组温度，同时保持在封闭的腔室内。加热灯由一个或多个光学透明外壳单独地或分组地包围，隔离加热灯与腔室环境及其中的晶片或晶片。光学透明外壳可以包括相关联的反射器和/或透镜，以将较大比例的发射的辐射热能从灯引向半导体晶片。薄平面石英衬垫也可以插在灯和衬底之间。通过控制室内的辐射能分布，并消除通常用于隔离现有技术RTP系统中的灯的厚平面石英窗，可获得更高的处理速率和改进的可靠性。

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