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1. 发明申请

US20040235303A1 Endpoint determination of process residues in wafer-less auto clean process using optical emission spectroscopy 审中-公开
标题翻译：使用光发射光谱法测定无晶圆自动清洁过程中的工艺残留物
公开(公告)号：US20040235303A1
公开(公告)日：2004-11-25
申请号：US10876442
申请日：2004-06-25
申请人： LAM RESEARCH CORPORATION
发明人： Vincent Wong , Brett C. Richardson , Andrew Lui , Scott Baldwin
IPC分类号： C23F001/00 , H01L021/306 , H01L021/302 , H01L021/461
CPC分类号： H01J37/32862 , B08B3/06 , B08B7/0035 , C23C16/4405 , H01J37/32935
摘要： A plasma processing system is provided. The plasma processing system includes a processing chamber having a gas inlet for introducing cleaning gases. The cleaning gas is optimized to remove byproducts deposited on inner surfaces of the processing chamber. The processing chamber includes a top electrode for creating a plasma from the cleaning gas to perform the cleaning process. A variable conductance meter for controlling a pressure inside the processing chamber independently of a flow rate of process gases is included. The variable conductance meter is positioned on an outlet of the chamber. An optical emission spectrometer (OES) for detecting an endpoint of the cleaning process performed in the processing chamber is included. The OES is located to detect an emission intensity in the processing chamber from the plasma. The OES is configured to trace the emission intensity. A pumping system for evacuating the processing chamber between processing operations is included.
摘要翻译：提供等离子体处理系统。等离子体处理系统包括具有用于引入清洁气体的气体入口的处理室。清洁气体被优化以除去沉积在处理室的内表面上的副产物。处理室包括用于从清洁气体产生等离子体以进行清洁处理的顶部电极。包括用于独立于处理气体的流量来控制处理室内的压力的可变电导计。可变电导率计位于腔室的出口处。包括用于检测在处理室中执行的清洁处理的端点的光发射光谱仪（OES）。 OES位于从等离子体检测处理室中的发射强度。 OES被配置为跟踪发射强度。包括用于在处理操作之间排空处理室的泵送系统。

2. 发明申请

US20040216842A1 Apparatus and method for polishing semiconductor wafers using one or more pivotable load-and-unload cups 失效
标题翻译：用于使用一个或多个可枢转的装载和卸载杯来研磨半导体晶片的装置和方法
公开(公告)号：US20040216842A1
公开(公告)日：2004-11-04
申请号：US10765613
申请日：2004-01-27
发明人： In Kwon Jeong
IPC分类号： H01L021/306
CPC分类号： B24B41/005 , B24B37/042 , B24B37/345 , H01L21/67745
摘要： An apparatus and method for polishing objects, such as semiconductor wafers, utilizes one or more pivotable load-and-unload cups to transfer the objects to and/or from one or more object carriers to polish the objects. Each pivotable load-and-unload cup may be configured to transfer the objects to and/or from a single object carrier. Alternatively, each pivotable load-and-unload cup may be configured to transfer the objects to and/or from two object carriers. The pivotable load-and-unload cups may be configured to be pivoted about one or more pivoting points over at least one polishing surface, such as a polishing pad surface.
摘要翻译：用于抛光诸如半导体晶片的物体的装置和方法利用一个或多个可枢转的装载和卸载杯将物体传送到一个或多个物体载体和/或从一个或多个物体载体抛光物体。每个可枢转的装载和卸载杯可以被配置成将物体传送到单个物体载体和/或从单个物体载体传送。或者，每个可枢转的负载和卸载杯可以被配置成将物体传送到和/或从两个物体载体传送。可枢转装载和卸载杯可以被配置为围绕至少一个抛光表面（例如抛光垫表面）围绕一个或多个枢转点枢转。

3. 发明申请

US20040200574A1 Method for controlling a process for fabricating integrated devices 审中-公开
标题翻译：用于控制用于制造集成器件的工艺的方法
公开(公告)号：US20040200574A1
公开(公告)日：2004-10-14
申请号：US10805136
申请日：2004-03-19
申请人： Applied Materials, Inc.
发明人： Matthew F. Davis , Lei Lian , Barbara Schmidt
IPC分类号： H01L021/66 , G01R031/26 , C23F001/00 , H01L021/306
CPC分类号： G05B19/41875 , G05B2219/32182 , G05B2219/37398 , G05B2219/45031 , G05B2219/45212 , H01J37/32935 , H01L21/3065 , H01L22/20 , Y02P90/20 , Y02P90/22
摘要： A method for controlling a process for fabricating integrated devices on a substrate. The method includes ex-situ and in-situ measurements of pre-etch and post-etch dimensions for structures formed on the substrate and uses the results of the measurements to adjust process recipes and to control the operational status of etch and external substrate processing equipment. In one exemplary application, the method is used during a multi-pass process for fabricating a capacitive structure of a trench capacitor.
摘要翻译：一种用于控制在衬底上制造集成器件的工艺的方法。该方法包括用于在衬底上形成的结构的预蚀刻和蚀刻后尺寸的原位和原位测量，并且使用测量结果来调整工艺配方并控制蚀刻和外部衬底处理设备的操作状态。在一个示例性应用中，该方法在用于制造沟槽电容器的电容结构的多遍处理期间被使用。

4. 发明申请

US20040195208A1 Method and apparatus for performing hydrogen optical emission endpoint detection for photoresist strip and residue removal 审中-公开
标题翻译：用于进行光致抗蚀剂剥离和残留物去除的氢光发射端点检测的方法和装置
公开(公告)号：US20040195208A1
公开(公告)日：2004-10-07
申请号：US10776672
申请日：2004-02-11
发明人： Elizabeth G. Pavel , Mark N. Kawaguchi , James S. Papanu
IPC分类号： H01L021/306
CPC分类号： H01J37/32963 , H01J37/32935 , H01J2237/3342
摘要： A method for monitoring and detecting a hydrogen optical emission while performing photoresist stripping and removal of residues from a substrate or a film stack on a substrate.
摘要翻译：一种用于监测和检测氢光发射的方法，同时执行光刻胶剥离和从衬底上的残留物去除基底上的膜堆叠。

5. 发明申请

US20040194883A1 Delivery of dissolved ozone 审中-公开
公开(公告)号：US20040194883A1
公开(公告)日：2004-10-07
申请号：US10829638
申请日：2004-04-22
发明人： Kevin J. Torek , Jonathan C. Morgan , Paul A. Morgan
IPC分类号： B08B003/00 , C23F001/00 , H01L021/306
CPC分类号： H01L21/6708 , B08B3/08 , B08B2203/005 , G03F7/427 , H01L21/31133 , H01L21/67051
摘要： An apparatus and method for delivering ozone to a workpiece. In one embodiment, fluid is sprayed onto a workpiece placed in an ozone-rich environment. Alternatively, ozone is mixed with the fluid prior to spraying the fluid onto the workpiece. When spraying the fluid, the invention pulses the fluid at desired rates to create a substantially uniform layer of ozone-rich fluid on the workpiece. In another embodiment, the workpiece is also slowly rotated during at least a portion of the time the layer of ozone-rich fluid is applied to the workpiece.

6. 发明申请

US20040177927A1 Plasma procesor and plasma processing method 有权
标题翻译：等离子处理和等离子体处理方法
公开(公告)号：US20040177927A1
公开(公告)日：2004-09-16
申请号：US10483251
申请日：2004-05-06
发明人： Akihiro Kikuchi , Satoshi Kayamori , Shinya Shima , Yuichiro Sakamoto , Kimihiro Higuchi , Kaoru Oohashi , Takehiro Ueda , Munehiro Shibuya , Tadashi Gondai
IPC分类号： C23F001/00 , H01L021/306
CPC分类号： H01J37/32724 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/32082 , H01J37/32174 , H01J37/3244 , H01J37/32532 , H01J37/32623 , H01J37/32642 , H01J37/32715 , H01J37/3411 , H01J2237/002 , H01J2237/0206 , H01J2237/334 , H01L21/67069
摘要： An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., null400 to null600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.
摘要翻译：蚀刻室1包括聚焦环9，以围绕设置在下电极4上的半导体晶片W.等离子体处理器设置有电位控制DC电源33以控制该聚焦环9的电位，以及这样构成为向下电极4提供例如-400至-600V的DC电压以控制聚焦环9的电位。这种结构防止表面电弧沿着待处理基板的表面发展。

7. 发明申请

US20040177922A1 Method and apparatus for monitoring plasma conditions using a monitoring ring 失效
标题翻译：使用监测环监测等离子体条件的方法和装置
公开(公告)号：US20040177922A1
公开(公告)日：2004-09-16
申请号：US10788328
申请日：2004-03-01
申请人： TOKYO ELECTRON LIMITED
发明人： Steven T. Fink
IPC分类号： C23F001/00 , H01L021/306 , F26B005/04
CPC分类号： H01J37/32935
摘要： A plasma processing system is provided that allows for monitoring a plasma processing system during plasma processing. The plasma processing system includes a processing chamber and a monitoring system for monitoring conditions of the processing chamber. By providing tools within a tool housing that is protected from the plasma environment but still in very close proximity thereto, better process monitoring can be achieved.
摘要翻译：提供了等离子体处理系统，其允许在等离子体处理期间监视等离子体处理系统。等离子体处理系统包括处理室和用于监视处理室的状况的监视系统。通过在工具外壳内提供工具以防止等离子体环境，但仍然非常接近于其，可以实现更好的过程监控。

8. 发明申请

US20040168767A1 Semiconductor processing apparatus 失效
标题翻译：半导体处理装置
公开(公告)号：US20040168767A1
公开(公告)日：2004-09-02
申请号：US10373711
申请日：2003-02-27
发明人： Seiichiro Kanno , Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Hideki Kihara , Hideyuki Yamamoto
IPC分类号： H01L021/306
CPC分类号： H01L21/67253 , H01J37/32082 , H01J37/3299 , H01J2237/334 , H01L21/67069 , H01L21/67248
摘要： A semiconductor processing apparatus that processes a semiconductor wafer disposed in a process chamber of a processing apparatus main unit 38 comprises: a setting unit 33 for enabling a user to set a temperature of the semiconductor wafer; and a control unit 26 for controlling a processing of the semiconductor wafer based on the temperature of the semiconductor wafer set by the setting unit.
摘要翻译：处理设置在处理设备主单元38的处理室中的半导体晶片的半导体处理设备包括：设置单元33，用于使用户能够设置半导体晶片的温度; 以及控制单元26，用于基于由设置单元设置的半导体晶片的温度来控制半导体晶片的处理。

9. 发明申请

US20040159401A1 Diagnosis method for semiconductor processing apparatus 失效
标题翻译：半导体处理装置的诊断方法
公开(公告)号：US20040159401A1
公开(公告)日：2004-08-19
申请号：US10781689
申请日：2004-02-20
发明人： Go Miya , Junichi Tanaka , Tsutomu Tetsuka , Hideyuki Yamamoto
IPC分类号： H01L021/306
CPC分类号： H01L21/67288 , C23C16/5096 , C23C16/52 , H01J37/32935
摘要： A semiconductor processing apparatus capable of diagnosing re-assembly fault of a process chamber after wet cleaning or a condition of the process chamber such as deposition of reaction products and cutoff of components, and a diagnosis method of the semiconductor processing apparatus. A semiconductor processing apparatus for imparting plasma treatment to a sample arranged in a vacuum process chamber includes a plasma generation apparatus for generating plasma inside a vacuum process chamber and a process gas introduction device for introducing a process gas into the vacuum process chamber. The semiconductor processing apparatus includes an oscillator for imparting mechanical oscillation to the semiconductor processing apparatus and a receiver for detecting mechanical oscillation generated by the oscillator in the semiconductor processing apparatus.
摘要翻译：能够诊断湿式清洗之后的处理室的重新组装故障的处理装置或处理室的状态，例如反应产物的沉积和部件的切断，以及半导体处理装置的诊断方法。用于对设置在真空处理室中的样品进行等离子体处理的半导体处理装置包括：用于在真空处理室内产生等离子体的等离子体产生装置和用于将处理气体引入真空处理室的处理气体引入装置。半导体处理装置包括用于向半导体处理装置施加机械振荡的振荡器和用于检测由半导体处理装置中的振荡器产生的机械振荡的接收器。

10. 发明申请

US20040149384A1 Semiconductor manufacturing apparatus and method of processing semiconductor wafer using plasma, and wafer voltage probe 审中-公开
标题翻译：使用等离子体处理半导体晶片的半导体制造装置和方法以及晶片电压探针
公开(公告)号：US20040149384A1
公开(公告)日：2004-08-05
申请号：US10679342
申请日：2003-10-07
发明人： Seiichiro Kanno , Ryoji Nishio , Tsutomu Tetsuka , Junichi Tanaka , Hideyuki Yamamoto , Kazuyuki Ikenaga , Saburou Kanai
IPC分类号： H01L021/306
CPC分类号： H01J37/32174 , H01J37/321 , H01J37/3299 , H01L21/31116
摘要： A semiconductor manufacturing apparatus includes a unit for generating a plasma in a vacuum chamber, a wafer stage for holding a semiconductor wafer introduced into the vacuum chamber, a high frequency power supply for applying a high frequency voltage to the wafer stage, a wafer voltage probe for measuring a voltage of the semiconductor wafer at a rear surface of the semiconductor wafer, a current and voltage probe for measuring at least one of a voltage and a current applied to the wafer stage from the high frequency power supply, and a control portion. The control portion obtains an impedance from the semiconductor wafer to earth through the plasma on the basis of a voltage value of the semiconductor wafer measured by the wafer voltage probe, and a voltage value or a current value measured by the current and voltage probe, and performs a processing based on the obtained impedance.
摘要翻译：半导体制造装置包括：在真空室中产生等离子体的单元，用于保持引入真空室的半导体晶片的晶片台，向晶片台施加高频电压的高频电源;晶片电压探针用于测量半导体晶片的后表面上的半导体晶片的电压;电流和电压探针，用于测量从高频电源施加到晶片台的电压和电流中的至少一个;以及控制部分。控制部分根据由晶片电压探针测量的半导体晶片的电压值和由电流和电压探针测量的电压值或电流值，从半导体晶片到等离子体的接地阻抗，以及基于获得的阻抗进行处理。

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