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1. 发明申请

US20040014320A1 Method and apparatus of generating PDMAT precursor 有权
标题翻译：生成PDMAT前体的方法和装置
公开(公告)号：US20040014320A1
公开(公告)日：2004-01-22
申请号：US10447255
申请日：2003-05-27
申请人： Applied Materials, Inc.
发明人： Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
IPC分类号： B01J010/00 , B01J010/02 , B01J012/00 , B01J012/02 , B01J014/00 , B01J015/00 , B01J016/00 , B01J019/00 , B32B027/04 , B32B027/12 , H01L021/302 , H01L021/461 , B32B005/02
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/34 , C23C16/4402 , C23C16/4481 , C23C16/4482 , C23C16/4487 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A precursor and method for filling a feature in a substrate. The method generally includes depositing a barrier layer, the barrier layer being formed from pentakis(dimethylamido)tantalum having less than about 5 ppm of chlorine. The method additionally may include depositing a seed layer over the barrier layer and depositing a conductive layer over the seed layer. The precursor generally includes pentakis(dimethylamido)tantalum having less than about 5 ppm of chlorine. The precursor is generated in a canister having a surrounding heating element configured to reduce formation of impurities.
摘要翻译：用于填充衬底中的特征的前体和方法。该方法通常包括沉积阻挡层，阻挡层由具有小于约5ppm氯的五（二甲基氨基）钽形成。该方法另外可以包括在阻挡层上沉积种子层并在种子层上沉积导电层。前体通常包括具有小于约5ppm氯的五（二甲基氨基）钽。在具有周围加热元件的罐中产生前体，该加热元件被配置为减少杂质的形成。

2. 发明申请

US20030140857A1 Apparatus and method for low pressure CVD deposition of tungsten and tungsten nitride 审中-公开
标题翻译：用于钨和氮化钨的低压CVD沉积的装置和方法
公开(公告)号：US20030140857A1
公开(公告)日：2003-07-31
申请号：US10058670
申请日：2002-01-28
申请人： Applied Materials, Inc.
发明人： Salvador P. Umotoy , Lawrence Chung-Lai Lei , Ling Chen , Anzhong Chang , Seshadri Ganguli
IPC分类号： C23C016/00
CPC分类号： C23C16/45563 , C23C16/16 , C23C16/448 , C23C16/45582
摘要： In accordance with an embodiment of the invention, a processing chamber is configured to carry out chemical vapor deposition (CVD). An ampoule vaporizer is fastened to the chamber, and is configured to convert a fluorine-free tungsten-containing solid compound to vapor delivered to the chamber for use in the CVD. In one embodiment, the solid compound is tungsten hexacarbonyl (W(CO)6). In another embodiment, a mass flow controller is fastened to the chamber, and is configured to receive the vapor from the ampoule vaporizer, regulate the flow of the vapor, and deliver the vapor to the chamber. In yet another embodiment, the chamber includes a funnel-shaped dispersion plate configured to receive a gas mixture and direct the gas mixture toward a surface of the wafer in a substantially uniform manner.
摘要翻译：根据本发明的实施例，处理室被配置为执行化学气相沉积（CVD）。安瓿蒸发器被固定到室，并且被配置为将无氟含钨固体化合物转化成输送到室中用于CVD中的蒸气。在一个实施方案中，固体化合物是六羰基钨（W（CO）6）。在另一个实施例中，质量流量控制器被紧固到腔室，并且被配置为从安瓿蒸发器接收蒸气，调节蒸汽的流动并将蒸气输送到腔室。在另一个实施例中，腔室包括漏斗形分散板，其配置成接收气体混合物并以基本均匀的方式将气体混合物引向晶片的表面。

3. 发明申请

US20020192948A1 Integrated barrier layer structure for copper contact level metallization 审中-公开
标题翻译：用于铜接触层金属化的集成阻挡层结构
公开(公告)号：US20020192948A1
公开(公告)日：2002-12-19
申请号：US09882696
申请日：2001-06-15
申请人： Applied Materials, Inc.
发明人： Fusen Chen , Ling Chen , Gongda Yao , Ming Xi , Barry Chin , Mei Chang , Seshadri Ganguli , Michael X. Yang , Hyungsuk Alexander Yoon
IPC分类号： H01L021/4763 , H01L021/44
CPC分类号： H01L21/76846 , H01L21/2855 , H01L21/28556
摘要： A method of forming a composite barrier layer structure for use in integrated circuits is disclosed. The composite barrier layer structure formed using both physical vapor deposition (PVD) and chemical vapor deposition (CVD) techniques. The composite barrier layer structure comprises a CVD deposited layer formed on a PVD deposited layer. During the PVD process, the underlying surface of the substrate is treated, reducing the resistivity of the barrier layer structure formed thereon.
摘要翻译：公开了一种形成用于集成电路的复合势垒层结构的方法。使用物理气相沉积（PVD）和化学气相沉积（CVD）技术形成的复合阻挡层结构。复合势垒层结构包括形成在PVD沉积层上的CVD沉积层。在PVD工艺期间，处理衬底的下表面，降低其上形成的阻挡层结构的电阻率。

4. 发明申请

US20040241321A1 Ruthenium layer formation for copper film deposition 有权
标题翻译：用于铜膜沉积的钌层形成
公开(公告)号：US20040241321A1
公开(公告)日：2004-12-02
申请号：US10811230
申请日：2004-03-26
申请人： APPLIED MATERIALS, INC.
发明人： Seshadri Ganguli , Kavita Shah , Nirmaya Maity , Mei Chang
IPC分类号： C23C016/00
CPC分类号： C23C16/45553 , C23C16/18 , H01L21/28562 , H01L21/76843 , H01L21/76871 , H01L21/76873 , H01L21/76874
摘要： A method of ruthenium layer formation for high aspect ratios, interconnect features is described. The ruthenium layer is formed using a cyclical deposition process. The invention generally provides a method of forming a film on a substrate surface including positioning a substrate within a process chamber, exposing a ruthenium-containing compound to the substrate surface, purging the process chamber with a purge gas, reducing the ruthenium-containing compound with a reductant to form a ruthenium layer on the substrate surface and purging the process chamber with the purge gas. The ruthenium-containing compound is selected from the group consisting of bis(dialkylpentadienyl)ruthenium compounds, bis(alkylpentadienyl) ruthenium compounds, bis(pentadienyl)ruthenium compounds, and combinations thereof.
摘要翻译：描述了用于高纵横比的互连特征的钌层形成方法。使用循环沉积工艺形成钌层。本发明通常提供了一种在基材表面上形成薄膜的方法，包括在处理室内定位基材，将含钌化合物暴露于基材表面，用吹扫气体清洗处理室，用含有钌的化合物还原含钌化合物还原剂，以在衬底表面上形成钌层，并用吹扫气体清洗处理室。含钌化合物选自双（二烷基戊二烯基）钌化合物，双（烷基戊二烯基）钌化合物，双（戊二烯基）钌化合物及其组合。

5. 发明申请

US20020190379A1 W-CVD with fluorine-free tungsten nucleation 审中-公开
标题翻译： W-CVD无氟钨成核
公开(公告)号：US20020190379A1
公开(公告)日：2002-12-19
申请号：US10104842
申请日：2002-03-22
申请人： Applied Materials, Inc.
发明人： Ping Jian , Seshadri Ganguli , Karl A. Littau , Christophe Marcadal , Ling Chen
IPC分类号： H01L021/44
CPC分类号： C23C16/0281 , C23C16/16 , H01L21/28556
摘要： In accordance with the present invention, a method is provided for forming an improved tungsten layer. In one embodiment, a CVD method for depositing a tungsten layer on a substrate includes forming a bilayer of titanium-nitride/titanium (TiN/Ti) over the substrate, placing the substrate in a deposition zone of a substrate processing chamber, and introducing a fluorine-free tungsten-containing precursor and a carrier gas into the deposition zone for forming a tungsten nucleation layer over the TiN/Ti bilayer. The Ti layer is between the TiN layer and the substrate. After the tungsten nucleation formation, a process gas including a tungsten-containing source and a reduction agent are introduced into the deposition zone for forming the bulk tungsten layer. In one embodiment, the fluorine-free tungsten-containing precursor includes W(CO)6, and the carrier gas is Argon.
摘要翻译：根据本发明，提供一种用于形成改进的钨层的方法。在一个实施例中，用于在衬底上沉积钨层的CVD方法包括在衬底上形成氮化钛/钛（TiN / Ti）的双层，将衬底放置在衬底处理室的沉积区中，并引入无氟含钨前体和载气进入沉积区，用于在TiN / Ti双层上形成钨成核层。 Ti层位于TiN层和衬底之间。在钨成核形成之后，将包含含钨源和还原剂的工艺气体引入用于形成体钨层的沉积区中。在一个实施方案中，无氟含钨前体包括W（CO）6，载气为氩。

6. 发明申请

US20030203616A1 Atomic layer deposition of tungsten barrier layers using tungsten carbonyls and boranes for copper metallization 审中-公开
标题翻译：使用羰基钨和硼烷用于铜金属化的钨阻挡层的原子层沉积
公开(公告)号：US20030203616A1
公开(公告)日：2003-10-30
申请号：US10133787
申请日：2002-04-24
申请人： Applied Materials, Inc.
发明人： Hua Chung , Seshadri Ganguli , Ling Chen
IPC分类号： H01L021/4763 , H01L021/44
CPC分类号： C23C16/45553 , C23C16/16 , H01L21/28562 , H01L21/76843 , H01L21/76873 , H01L21/76874
摘要： A method of tungsten layer deposition for copper metallization in semiconductor devices includes reacting a tungsten carbonyl compound and a borane compound using a cyclical deposition technique. In one embodiment, the tungsten barrier layer is formed on a patterned dielectric layer by alternately adsorbing the tungsten carbonyl compound and the borane compound onto a semiconductor substrate. The tungsten layers have substantially uniform dimensions and excellent adhesion to copper such as copper seed layers or direct electroplating of copper onto the tungsten layer.
摘要翻译：用于半导体器件中铜金属化的钨层沉积的方法包括使用循环沉积技术使羰基钨化合物和硼烷化合物反应。在一个实施例中，通过交替地将钨羰基化合物和硼烷化合物吸附到半导体衬底上，在图案化的介电层上形成钨阻挡层。钨层具有基本均匀的尺寸和对诸如铜种子层的铜的优异粘合性或者将铜直接电镀到钨层上。

7. 发明申请

US20030019428A1 Chemical vapor deposition chamber 审中-公开
标题翻译：化学气相沉积室
公开(公告)号：US20030019428A1
公开(公告)日：2003-01-30
申请号：US10134206
申请日：2002-04-26
申请人： APPLIED MATERIALS, INC.
发明人： Vincent W. Ku , Anzhong Chang , Anh N. Nguyen , Ming Xi , Xiaoxiong Yuan , Juan B. Tuscano JR. , Lawrence C. Lei , Seshadri Ganguli , Michael Yang , Chen-An Chen , Ling Chen
IPC分类号： C23C016/00 , C23F001/00 , H01L021/306
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45512
摘要： A processing chamber is adapted to perform a deposition process on a substrate. The chamber includes a pedestal adapted to hold a substrate during deposition and a gas mixing and distribution assembly mounted above the pedestal. The gas mixing and distribution assembly includes a face plate, a dispersion plate mounted above the face plate, and a mixing fixture mounted above the dispersion plate. The face plate is adapted to present an emissivity invariant configuration to the pedestal. The mixing fixture includes a mixing chamber to which a process gas is flowed and an outer chamber surrounding the mixing chamber. The processing chamber further includes an enclosure and a liner installed inside the enclosure and surrounding the pedestal. The liner defines a gap between the liner and the enclosure. The gap has a minimum width adjacent an exhaust port and a maximum width at a point that is diametrically opposite the exhaust port.
摘要翻译：处理室适于在基板上执行沉积处理。腔室包括适于在沉积期间保持基底的基座和安装在基座上方的气体混合和分配组件。气体混合分配组件包括面板，安装在面板上方的分散板和安装在分散板上方的混合夹具。面板适于向基座呈现发射率不变构型。混合夹具包括处理气体流过的混合室和围绕混合室的外室。处理室还包括外壳和安装在外壳内并围绕基座的衬垫。衬套限定了衬套和外壳之间的间隙。该间隙具有邻近排气口的最小宽度和在与排气口径向相反的点处的最大宽度。

8. 发明申请

US20030008070A1 Low-resistivity tungsten from high-pressure chemical vapor deposition using metal-organic precursor 审中-公开
标题翻译：使用金属有机前体的高压化学气相沉积的低电阻率钨
公开(公告)号：US20030008070A1
公开(公告)日：2003-01-09
申请号：US09880465
申请日：2001-06-12
申请人： Applied Materials,Inc
发明人： Sean Michael Seutter , Seshadri Ganguli , Mei Chang , Michael X. Yang , Ming Xi
IPC分类号： C23C016/00
CPC分类号： C23C16/16 , H01L21/28556 , H01L21/28568
摘要： Provided herein is a method of depositing a low resistivity tungsten film onto a wafer comprising the steps of introducing a metalorganic tungsten-containing compound into a deposition chamber of a CVD apparatus; maintaining the deposition chamber at a pressure and the wafer at a temperature suitable for the high pressure chemical vapor deposition of the tungsten film onto the wafer; thermally decomposing the tungsten-containing compound in the deposition chamber; and vapor-depositing the tungsten film onto the wafer thereby forming a low-resistivity tungsten film. Specifically provided is a method of depositing a low-resistivity tungsten film by high pressure MOCVD using tungsten hexacarbonyl as the precursor. Also provided is a low-resistivity tungsten film.
摘要翻译：本文提供了一种在晶片上沉积低电阻率钨膜的方法，包括将金属有机含钨化合物引入CVD设备的沉积室中的步骤; 将沉积室保持在压力和晶片处于适合于将钨膜高压化学气相沉积到晶片上的温度; 在沉积室中热分解含钨化合物; 并将钨膜气相沉积到晶片上，从而形成低电阻率钨膜。具体提供的是使用六羰基钨作为前体的通过高压MOCVD沉积低电阻率钨膜的方法。还提供了低电阻率钨膜。

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