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1. 发明申请

US20070281098A1 Composition for forming antireflection coating 审中-公开
标题翻译：用于形成抗反射涂层的组合物
公开(公告)号：US20070281098A1
公开(公告)日：2007-12-06
申请号：US11882254
申请日：2007-07-31
申请人： Taku Hirayama , Tomotaka Yamada , Daisuke Kawana , Kouki Tamura , Kazufumi Sato
发明人： Taku Hirayama , Tomotaka Yamada , Daisuke Kawana , Kouki Tamura , Kazufumi Sato
IPC分类号： B05D3/00
CPC分类号： C08G77/14 , C08G77/04 , C08G77/70 , C09D5/32 , C09D183/04 , C09D183/06 , G02B1/111 , G03F7/0757 , G03F7/091 , C08L2666/04
摘要： A composition for forming an antireflection coating, characterized in that it comprises an organic solvent and, dissolved therein, (A) a ladder silicone copolymer containing (a1) 10 to 90 mole % of a (hydroxyphenylalkyl)silsesquioxane unit, (a2) 0 to 50 mole % of a (alkoxyphenylalkyl)silsesquioxane unit and (a3) 10 to 90 mole % of an alkyl or phenylsilsesquioxane unit, (B) an acid generator generating an acid upon exposure to heat or light, and (C) a crosslinking agent, and is capable of forming an antireflection coating exhibiting an optional parameter (k value) for an ArF laser of the range of 0.002 to 0.95. The composition is soluble in an organic solvent, can be applied by a conventional spin coating method with ease, has good storage stability, and can exhibit an adjusted preventive capability for reflection through the introduction of a chromophoric group absorbing a radiation ray thereto.
摘要翻译：一种用于形成抗反射涂层的组合物，其特征在于，其包含有机溶剂，并且溶解于其中（A）含有（〜1/10）10〜90摩尔％的（羟基苯基烷基）倍半硅氧烷单元，（a 2 O 2）0〜50摩尔％的（烷氧基苯基烷基）倍半硅氧烷单元和（〜3）10〜90摩尔％的烷基或苯基倍半硅氧烷单元，（B）在暴露于热或光时产生酸的酸发生剂，和（C）交联剂，并且能够形成对于0.002至约0.002的范围的ArF激光显示可选参数（k值）的抗反射涂层 0.95。该组合物可溶于有机溶剂，可以通过常规的旋涂法容易地进行涂布，具有良好的储存稳定性，并且通过引入吸收辐射线的发色团，可以显示调整的防止反射能力。

2. 发明授权

US07261994B2 Positive resist composition 有权
标题翻译：正抗蚀剂组成
公开(公告)号：US07261994B2
公开(公告)日：2007-08-28
申请号：US11091617
申请日：2005-03-28
申请人： Takayuki Hosono , Koki Tamura , Daisuke Kawana , Tomotaka Yamada
发明人： Takayuki Hosono , Koki Tamura , Daisuke Kawana , Tomotaka Yamada
IPC分类号： G03F7/039
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0392 , G03F7/0757 , Y10S430/115 , Y10S430/122
摘要： A positive resist composition having excellent mask linearity is provided. This composition is a positive resist composition comprising a base resin component (A) and an acid generator component (B) generating an acid under exposure, wherein the base resin component (A) is a silicone resin and the acid generator component (B) contains an onium salt-based acid generator (B1) containing a perfluoroalkyl sulfonate ion having 3 or 4 carbon atoms as an anion.
摘要翻译：提供了具有优异的掩模线性的正性抗蚀剂组合物。该组合物是包含产生暴露酸的基础树脂成分（A）和酸发生剂成分（B）的正性抗蚀剂组合物，其中，所述基础树脂成分（A）为硅树脂，所述酸发生剂成分（B）含有含有具有3或4个碳原子的全氟烷基磺酸根离子作为阴离子的鎓盐型酸发生剂（B1）。

3. 发明申请

US20070178394A1 RESIST COMPOSITION 有权
标题翻译：耐腐蚀组合物
公开(公告)号：US20070178394A1
公开(公告)日：2007-08-02
申请号：US11621896
申请日：2007-01-10
申请人： Taku Hirayama , Hideo Hada , Satoshi Fujimura , Takeshi Iwai , Mitsuru Sato , Ryoichi Takasu , Toshikazu Tachikawa , Jun Iwashita , Keita Ishiduka , Tomotaka Yamada , Toshikazu Takayama , Masaaki Yoshida
发明人： Taku Hirayama , Hideo Hada , Satoshi Fujimura , Takeshi Iwai , Mitsuru Sato , Ryoichi Takasu , Toshikazu Tachikawa , Jun Iwashita , Keita Ishiduka , Tomotaka Yamada , Toshikazu Takayama , Masaaki Yoshida
IPC分类号： G03C5/00
CPC分类号： G03F7/70616 , G03F7/0382 , G03F7/0397 , G03F7/70341 , Y10S430/106 , Y10S430/111
摘要： A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.
摘要翻译：提供了相对于在浸没式光刻工艺中使用的溶剂是稳定的并且显示出优异的灵敏度和抗蚀剂图案轮廓的抗蚀剂组合物，以及形成使用这种抗蚀剂组合物的抗蚀剂图案的方法。抗蚀剂组合物是根据预定参数，或是包含含有酸解离的溶解抑制基团并在酸的作用下显示增加的碱溶性的树脂组分（A）的阳性抗蚀剂组合物，酸产生剂组分（B）和有机溶剂（C），其中，成分（A）含有来自含有酸解离性，溶解抑制基团但不含结构单元（a0）的（甲基）丙烯酸酯的结构单元（a1）含有二羧酸的酸酐的单元（a0-1）和含有酚羟基的结构单元（a0-2）。

4. 发明授权

US06818380B2 Method for the preparation of a semiconductor device 有权
标题翻译：制备半导体器件的方法
公开(公告)号：US06818380B2
公开(公告)日：2004-11-16
申请号：US10678259
申请日：2003-10-06
申请人： Satoshi Maemori , Kazufumi Sato , Kazuyuki Nitta , Katsumi Oomori , Kazuo Tani , Yohei Kinoshita , Tomotaka Yamada
发明人： Satoshi Maemori , Kazufumi Sato , Kazuyuki Nitta , Katsumi Oomori , Kazuo Tani , Yohei Kinoshita , Tomotaka Yamada
IPC分类号： G03F7004
CPC分类号： G03F7/0392
摘要： The invention discloses an improvement in the photolithographic patterning process of a photoresist layer in the manufacture of semiconductor devices in which occurrence of defects in the patterned resist layer can be greatly suppressed resulting in increased reliability of the semiconductor devices and productivity thereof. The improvement can be accomplished by using a chemical-amplification positive-working photoresist composition which exhibits a rate of film thickness reduction in the range from 0.09 to 1.0 nm/second when the photoresist layer before light-exposure is kept in a 2.38% aqueous solution of tetramethylammonium hydroxide at 23° C. to dissolve away the resist layer.
摘要翻译：本发明公开了在半导体器件的制造中光致抗蚀剂层的光刻图案化工艺的改进，其中可以大大抑制图案化抗蚀剂层中的缺陷的发生，从而提高半导体器件的可靠性及其生产率。可以通过使用化学扩增正性光致抗蚀剂组合物来实现改进，当将曝光前的光致抗蚀剂层保持在2.38％的水溶液中时，其表现出在0.09至1.0nm /秒的范围内的膜厚度降低速率的氢氧化四甲铵在23℃下溶解掉抗蚀剂层。

5. 发明授权

US08216763B2 Photosensitive resin composition and method of forming pattern 有权
标题翻译：感光树脂组合物及其形成方法
公开(公告)号：US08216763B2
公开(公告)日：2012-07-10
申请号：US12092701
申请日：2006-10-10
申请人： Kazufumi Sato , Yasushi Fujii , Hisanobu Harada , Koji Yonemura , Isamu Takagi , Daisuke Kawana , Tomotaka Yamada , Toshikazu Takayama
发明人： Kazufumi Sato , Yasushi Fujii , Hisanobu Harada , Koji Yonemura , Isamu Takagi , Daisuke Kawana , Tomotaka Yamada , Toshikazu Takayama
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0757
摘要： A photosensitive resin composition which has a quenching function and satisfactory long-term stability and which, in particular, can be prevented from suffering sensitivity abnormality caused by change with time during storage (change from given sensitivity); and a method of forming a pattern from the composition. The resist composition contains a base resin comprising, as the main component, a silicon-containing polymer which is a siloxane or silsesquioxane polymer or the like, the composition containing, as a quencher, a specific sulfonium compound in place of a nitrogenous compound.
摘要翻译：具有淬火功能和令人满意的长期稳定性的感光性树脂组合物，特别是可以防止由于储存期间随着时间的变化而引起的敏感性异常（从给定的灵敏度变化）; 以及从组合物形成图案的方法。抗蚀剂组合物含有作为主要成分的含有硅氧烷或倍半硅氧烷聚合物等的含硅聚合物的基础树脂，该组合物含有特定的锍化合物代替含氮化合物作为猝灭剂。

6. 发明授权

US08198004B2 Resist composition 有权
标题翻译：抗蚀组成
公开(公告)号：US08198004B2
公开(公告)日：2012-06-12
申请号：US12252319
申请日：2008-10-15
申请人： Taku Hirayama , Hideo Hada , Satoshi Fujimura , Takeshi Iwai , Mitsuru Sato , Ryoichi Takasu , Toshikazu Tachikawa , Jun Iwashita , Keita Ishiduka , Tomotaka Yamada , Toshikazu Takayama , Masaaki Yoshida
发明人： Taku Hirayama , Hideo Hada , Satoshi Fujimura , Takeshi Iwai , Mitsuru Sato , Ryoichi Takasu , Toshikazu Tachikawa , Jun Iwashita , Keita Ishiduka , Tomotaka Yamada , Toshikazu Takayama , Masaaki Yoshida
IPC分类号： G03F7/00 , G03F7/004 , G03F7/20
CPC分类号： G03F7/70616 , G03F7/0382 , G03F7/0397 , G03F7/70341 , Y10S430/106 , Y10S430/111
摘要： A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.
摘要翻译：提供了相对于在浸没式光刻工艺中使用的溶剂是稳定的并且显示出优异的灵敏度和抗蚀剂图案轮廓的抗蚀剂组合物，以及形成使用这种抗蚀剂组合物的抗蚀剂图案的方法。抗蚀剂组合物是根据预定参数，或是包含含有酸解离的溶解抑制基团并在酸的作用下显示增加的碱溶性的树脂组分（A）的阳性抗蚀剂组合物，酸产生剂组分（B）和有机溶剂（C），其中，成分（A）含有来自含有酸解离性，溶解抑制基团但不含结构单元（a0）的（甲基）丙烯酸酯的结构单元（a1）含有二羧酸的酸酐的单元（a0-1）和含有酚羟基的结构单元（a0-2）。

7. 发明授权

US07541138B2 Resist composition 有权
公开(公告)号：US07541138B2
公开(公告)日：2009-06-02
申请号：US11621895
申请日：2007-01-10
申请人： Taku Hirayama , Hideo Hada , Satoshi Fujimura , Takeshi Iwai , Mitsuru Sato , Ryoichi Takasu , Toshikazu Tachikawa , Jun Iwashita , Keita Ishiduka , Tomotaka Yamada , Toshikazu Takayama , Masaaki Yoshida
发明人： Taku Hirayama , Hideo Hada , Satoshi Fujimura , Takeshi Iwai , Mitsuru Sato , Ryoichi Takasu , Toshikazu Tachikawa , Jun Iwashita , Keita Ishiduka , Tomotaka Yamada , Toshikazu Takayama , Masaaki Yoshida
IPC分类号： G03F7/30
CPC分类号： G03F7/70616 , G03F7/0382 , G03F7/0397 , G03F7/70341 , Y10S430/106 , Y10S430/111
摘要： A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.

8. 发明申请

US20050227171A1 Lift-off positive resist composition 有权
标题翻译：剥离正性抗蚀剂组合物
公开(公告)号：US20050227171A1
公开(公告)日：2005-10-13
申请号：US11091666
申请日：2005-03-28
申请人： Daisuke Kawana , Tomotaka Yamada , Hiroshi Shimbori , Koki Tamura , Tomoyuki Ando , Takayuki Hosono
发明人： Daisuke Kawana , Tomotaka Yamada , Hiroshi Shimbori , Koki Tamura , Tomoyuki Ando , Takayuki Hosono
IPC分类号： G03C1/492 , G03F7/004 , G03F7/075
CPC分类号： G03F7/0045 , G03F7/0757
摘要： A lift-off positive resist composition capable of forming a fine lift-off pattern is provided. This composition comprises a base resin component (A) and an acid generator component (B) generating an acid under exposure, wherein the base resin component (A) is a silicone resin.
摘要翻译：提供能够形成微细剥离图案的剥离正型抗蚀剂组合物。该组合物包含产生暴露酸的基础树脂成分（A）和产酸成分（B），其中，所述基础树脂成分（A）为有机硅树脂。

9. 发明授权

US06340553B1 Positive-working photoresist composition 有权
公开(公告)号：US06340553B1
公开(公告)日：2002-01-22
申请号：US09585616
申请日：2000-06-02
申请人： Katsumi Oomori , Hiroto Yukawa , Akiyoshi Yamazaki , Kazuo Tani , Yohei Kinoshita , Tomotaka Yamada
发明人： Katsumi Oomori , Hiroto Yukawa , Akiyoshi Yamazaki , Kazuo Tani , Yohei Kinoshita , Tomotaka Yamada
IPC分类号： G03F7004
CPC分类号： G03F7/0397 , G03F7/0045 , Y10S430/106
摘要： Disclosed is a novel positive-working chemical-amplification photoresist composition used in the photolithographic patterning works in the manufacture of semiconductor devices capable of giving an excellently patterned resist layer with remarkably small film thickness reduction by the development treatment with an aqueous alkaline developer solution in the areas unexposed to patternwise exposure to light. Characteristically, the resinous ingredient in the composition, which is formulated in combination with a radiation-sensitive acid-generating agent and imparted with an increase in the solubility in an alkaline developer solution, is a ternary copolymeric resin consisting of the monomeric units of (a) hydroxystyrene units, (b) styrene units and (c) 1-alkylcyclohexyl (meth)acrylate units each in a specified molar fraction.

10. 发明授权

US08828304B2 Method of forming resist pattern by nanoimprint lithography 有权
标题翻译：通过纳米压印光刻形成抗蚀剂图案的方法
公开(公告)号：US08828304B2
公开(公告)日：2014-09-09
申请号：US12303434
申请日：2007-05-30
申请人： Kazufumi Sato , Tomotaka Yamada
发明人： Kazufumi Sato , Tomotaka Yamada
IPC分类号： B29C59/02 , B29C71/04 , G03F7/00 , G03F7/038 , G03F7/075 , B82Y40/00 , B82Y10/00 , B29K85/00 , B29C35/08
CPC分类号： B29C59/026 , B29C71/04 , B29C2035/0827 , B29K2085/00 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/0382 , G03F7/0757 , Y10S977/887
摘要： A method of forming a resist pattern of high aspect ratio excelling in etching resistance by the use of nanoimprint lithography. The method of forming a resist pattern by nanoimprint lithography comprises the steps of disposing organic layer (4) on support (1); providing resist layer (2) on the organic layer (4) with the use of chemical amplification type negative resist composition containing silsesquioxane resin (A); pressing light transmission allowing mold (3) with partial light shielding portion (5) against the resist layer (2) and thereafter carrying out exposure from the upside of the mold (3); and detaching the mold (3).
摘要翻译：通过使用纳米压印光刻法形成耐蚀刻性优异的高纵横比的抗蚀剂图案的方法。通过纳米压印光刻形成抗蚀剂图案的方法包括将有机层（4）放置在载体（1）上的步骤; 使用包含倍半硅氧烷树脂（A）的化学放大型负光刻胶组合物在有机层（4）上提供抗蚀剂层（2）; 按压光透射，允许具有部分遮光部分（5）的模具（3）抵靠抗蚀剂层（2），然后从模具（3）的上侧进行曝光; 并拆卸模具（3）。

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