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1. 发明授权

US06818380B2 Method for the preparation of a semiconductor device 有权
标题翻译：制备半导体器件的方法
公开(公告)号：US06818380B2
公开(公告)日：2004-11-16
申请号：US10678259
申请日：2003-10-06
申请人： Satoshi Maemori , Kazufumi Sato , Kazuyuki Nitta , Katsumi Oomori , Kazuo Tani , Yohei Kinoshita , Tomotaka Yamada
发明人： Satoshi Maemori , Kazufumi Sato , Kazuyuki Nitta , Katsumi Oomori , Kazuo Tani , Yohei Kinoshita , Tomotaka Yamada
IPC分类号： G03F7004
CPC分类号： G03F7/0392
摘要： The invention discloses an improvement in the photolithographic patterning process of a photoresist layer in the manufacture of semiconductor devices in which occurrence of defects in the patterned resist layer can be greatly suppressed resulting in increased reliability of the semiconductor devices and productivity thereof. The improvement can be accomplished by using a chemical-amplification positive-working photoresist composition which exhibits a rate of film thickness reduction in the range from 0.09 to 1.0 nm/second when the photoresist layer before light-exposure is kept in a 2.38% aqueous solution of tetramethylammonium hydroxide at 23° C. to dissolve away the resist layer.
摘要翻译：本发明公开了在半导体器件的制造中光致抗蚀剂层的光刻图案化工艺的改进，其中可以大大抑制图案化抗蚀剂层中的缺陷的发生，从而提高半导体器件的可靠性及其生产率。可以通过使用化学扩增正性光致抗蚀剂组合物来实现改进，当将曝光前的光致抗蚀剂层保持在2.38％的水溶液中时，其表现出在0.09至1.0nm /秒的范围内的膜厚度降低速率的氢氧化四甲铵在23℃下溶解掉抗蚀剂层。

2. 发明授权

US06777158B2 Method for the preparation of a semiconductor device 有权
标题翻译：制备半导体器件的方法
公开(公告)号：US06777158B2
公开(公告)日：2004-08-17
申请号：US09939842
申请日：2001-08-28
申请人： Satoshi Maemori , Kazufumi Sato , Kazuyuki Nitta , Katsumi Oomori , Kazuo Tani , Yohei Kinoshita , Tomotaka Yamada
发明人： Satoshi Maemori , Kazufumi Sato , Kazuyuki Nitta , Katsumi Oomori , Kazuo Tani , Yohei Kinoshita , Tomotaka Yamada
IPC分类号： G03F7004
CPC分类号： G03F7/0392
摘要： The invention discloses an improvement in the photo-lithographic patterning process of a photoresist layer in the manufacture of semiconductor devices in which occurrence of defects in the patterned resist layer can be greatly suppressed resulting in increased reliability of the semiconductor devices and productivity thereof. The improvement can be accomplished by using a chemical-amplification positive-working photoresist composition which exhibits a rate of film thickness reduction in the range from 0.09 to 1.0 nm/second when the photoresist layer before light-exposure is kept in a 2.38% aqueous solution of tetramethylammonium hydroxide at 23° C. to dissolve away the resist layer.
摘要翻译：本发明公开了在半导体器件的制造中光致抗蚀剂层的光刻图案化工艺的改进，其中可以大大抑制图案化抗蚀剂层中的缺陷的发生，从而提高半导体器件的可靠性及其生产率。可以通过使用化学扩增正性光致抗蚀剂组合物来实现改进，当将曝光前的光致抗蚀剂层保持在2.38％的水溶液中时，其表现出在0.09至1.0nm /秒的范围内的膜厚度降低速率的氢氧化四甲铵在23℃下溶解掉抗蚀剂层。

3. 发明授权

US06340553B1 Positive-working photoresist composition 有权
公开(公告)号：US06340553B1
公开(公告)日：2002-01-22
申请号：US09585616
申请日：2000-06-02
申请人： Katsumi Oomori , Hiroto Yukawa , Akiyoshi Yamazaki , Kazuo Tani , Yohei Kinoshita , Tomotaka Yamada
发明人： Katsumi Oomori , Hiroto Yukawa , Akiyoshi Yamazaki , Kazuo Tani , Yohei Kinoshita , Tomotaka Yamada
IPC分类号： G03F7004
CPC分类号： G03F7/0397 , G03F7/0045 , Y10S430/106
摘要： Disclosed is a novel positive-working chemical-amplification photoresist composition used in the photolithographic patterning works in the manufacture of semiconductor devices capable of giving an excellently patterned resist layer with remarkably small film thickness reduction by the development treatment with an aqueous alkaline developer solution in the areas unexposed to patternwise exposure to light. Characteristically, the resinous ingredient in the composition, which is formulated in combination with a radiation-sensitive acid-generating agent and imparted with an increase in the solubility in an alkaline developer solution, is a ternary copolymeric resin consisting of the monomeric units of (a) hydroxystyrene units, (b) styrene units and (c) 1-alkylcyclohexyl (meth)acrylate units each in a specified molar fraction.

4. 发明授权

US06485887B2 Positive-working photoresist composition 有权
标题翻译：正光刻胶组合物
公开(公告)号：US06485887B2
公开(公告)日：2002-11-26
申请号：US09950589
申请日：2001-09-13
申请人： Katsumi Oomori , Hiroto Yukawa , Akiyoshi Yamazaki , Kazuo Tani , Yohei Kinoshita , Tomotaka Yamada
发明人： Katsumi Oomori , Hiroto Yukawa , Akiyoshi Yamazaki , Kazuo Tani , Yohei Kinoshita , Tomotaka Yamada
IPC分类号： G03F7004
CPC分类号： G03F7/0397 , G03F7/0045 , Y10S430/106
摘要： Disclosed is a novel positive-working chemical-amplification photoresist composition used in the photolithographic patterning works in the manufacture of semiconductor devices capable of giving an excellently patterned resist layer with remarkably small film thickness reduction by the development treatment with an aqueous alkaline developer solution in the areas unexposed to patternwise exposure to light. Characteristically, the resinous ingredient in the composition, which is formulated in combination with a radiation-sensitive acid-generating agent and imparted with an increase in the solubility in an alkaline developer solution, is a ternary copolymeric resin consisting of the monomeric units of (a) hydroxystyrene units, (b) styrene units and (c) 1-alkylcyclohexyl (meth)acrylate units each in a specified molar fraction.
摘要翻译：公开了一种用于制造半导体器件的光刻图案化工艺中的新型正性化学扩增光致抗蚀剂组合物，该半导体器件能够通过用碱性显影剂水溶液进行显影处理而赋予优异的图案化抗蚀剂层，未暴露于图案曝光的区域。特别地，与辐射敏感的酸产生剂组合配制并赋予在碱性显影剂溶液中的溶解度增加的组合物中的树脂成分是三元共聚树脂，其由（a ）羟基苯乙烯单元，（b）苯乙烯单元和（c）指定摩尔分数的（甲基）丙烯酸1-烷基环己酯单元。

5. 发明授权

US06630282B2 Crosslinked positive-working photoresist composition 有权
公开(公告)号：US06630282B2
公开(公告)日：2003-10-07
申请号：US09928399
申请日：2001-08-14
申请人： Katsumi Oomori , Yohei Kinoshita , Tomotaka Yamada , Toshikazu Takayama
发明人： Katsumi Oomori , Yohei Kinoshita , Tomotaka Yamada , Toshikazu Takayama
IPC分类号： G03F7038
CPC分类号： G03F7/039 , G03F7/0045
摘要： The invention discloses a chemical-amplification positive-working photoresist composition of the crosslinked type used for photolithographic patterning works in the manufacture of electronic devices. While the composition comprises a film-forming resinous ingredient capable of being imparted with increased alkali-solubility in the presence of an acid and a radiation-sensitive acid-generating compound, optionally, with further admixture of an aliphatic amine compound and an acid compound, the inventive photoresist composition is characterized by the unique resinous ingredient which consists of four types of monomeric units including hydroxystyrene units, styrene units, monomeric units having acid-dissociable solubility-reducing groups and crosslinking units. The acid-dissociable solubility-reducing group is not conventional tert-butoxycarbonyloxy group but characteristically a 1-alkylcyclohexyl group or a polycyclic saturated aliphatic hydrocarbon group.

6. 发明授权

US06890697B2 Positive-working chemical-amplification photoresist composition 有权
标题翻译：正性化学增幅光刻胶组合物
公开(公告)号：US06890697B2
公开(公告)日：2005-05-10
申请号：US10059373
申请日：2002-01-31
申请人： Katsumi Oomori , Hiroto Yukawa , Ryusuke Uchida , Kazufumi Sato
发明人： Katsumi Oomori , Hiroto Yukawa , Ryusuke Uchida , Kazufumi Sato
IPC分类号： C08F212/14 , C08K5/42 , C08L25/18 , G03F7/004 , G03F7/039 , H01L21/027 , G03C1/73 , G03F7/20 , G03F7/30 , G03F7/38
CPC分类号： G03F7/0392 , G03F7/0045 , Y10S430/106 , Y10S430/11 , Y10S430/111 , Y10S430/115 , Y10S430/122 , Y10S430/126
摘要： Disclosed is a novel positive-working chemical-amplification photoresist composition capable of giving an extremely finely patterned resist layer in the manufacturing process of semiconductor devices. The photoresist composition comprises: (A) 100 parts by weight of a copolymeric resin consisting of from 50 to 85% by moles of (a) hydroxyl group-containing styrene units, from 15 to 35% by moles of (b) styrene units and from 2 to 20% by moles of (c) acrylate or methacrylate ester units each having a solubility-reducing group capable of being eliminated in the presence of an acid; and (B) from 1 to 20 parts by weight of a radiation-sensitive acid-generating agent which is an onium salt containing a fluoroalkyl sulfonate ion having 3 to 10 carbon atoms as the anion such as bis(4-tert-butylphenyl) iodonium nonafluorobutane sulfonate.
摘要翻译：公开了一种能够在半导体器件的制造过程中给出非常精细图案化的抗蚀剂层的新颖的正性化学扩增光致抗蚀剂组合物。光致抗蚀剂组合物包括：（A）100重量份由50-85摩尔％（a）含羟基的苯乙烯单元，15-35摩尔％的（b）苯乙烯单元组成的共聚树脂和 2〜20摩尔％的（c）丙烯酸酯或甲基丙烯酸酯单元，其各自具有可在酸存在下消除的溶解性降低基团; 和（B）1〜20重量份的辐射敏感性酸产生剂，其是含有具有3至10个碳原子的氟代烷基磺酸根离子作为阴离子的鎓盐，例如双（4-叔丁基苯基）碘鎓九氟丁烷磺酸盐。

7. 发明授权

US06815144B2 Positive-working chemical-amplification photoresist composition 有权
标题翻译：正性化学增幅光刻胶组合物
公开(公告)号：US06815144B2
公开(公告)日：2004-11-09
申请号：US10059236
申请日：2002-01-31
申请人： Katsumi Oomori , Hiroto Yukawa , Ryusuke Uchida , Kazufumi Sato
发明人： Katsumi Oomori , Hiroto Yukawa , Ryusuke Uchida , Kazufumi Sato
IPC分类号： G03C173
CPC分类号： G03F7/0045 , G03F7/0392 , Y10S430/106 , Y10S430/111 , Y10S430/115 , Y10S430/122 , Y10S430/126
摘要： Disclosed is a novel positive-working chemical-amplification photoresist composition capable of giving an extremely finely patterned resist layer in the manufacturing process of semiconductor devices. The photoresist composition comprises: (A) 100 parts by weight of a copolymeric resin consisting of from 50 to 85% by moles of (a) hydroxyl group-containing styrene units, from 15 to 35% by moles of (b) styrene units and from 2 to 20% by moles of (c) acrylate or methacrylate ester units each having a solubility-reducing group capable of being eliminated in the presence of an acid; and (B) from 1 to 20 parts by weight of a radiation-sensitive acid-generating agent which is an iodonium salt containing a fluoroalkyl sulfonate ion having 3 to 10 carbon atoms as the anion such as bis(4-tert-butylphenyl) iodonium nonafluorobutane sulfonate.
摘要翻译：公开了一种能够在半导体器件的制造过程中给出非常精细图案化的抗蚀剂层的新颖的正性化学扩增光致抗蚀剂组合物。光致抗蚀剂组合物包括：（A）100重量份由50-85摩尔％（a）含羟基的苯乙烯单元，15-35摩尔％的（b）苯乙烯单元组成的共聚树脂和 2〜20摩尔％的（c）丙烯酸酯或甲基丙烯酸酯单元，其各自具有可在酸存在下消除的溶解性降低基团; 和（B）1〜20重量份的辐射敏感性酸产生剂，其是含有具有3至10个碳原子的氟烷基磺酸根离子作为阴离子的碘鎓盐，例如双（4-叔丁基苯基）碘鎓九氟丁烷磺酸盐。

8. 发明授权

US06255041B1 Method for formation of patterned resist layer 有权
标题翻译：图案化抗蚀剂层的形成方法
公开(公告)号：US06255041B1
公开(公告)日：2001-07-03
申请号：US09291114
申请日：1999-04-14
申请人： Katsumi Oomori , Hiroto Yukawa , Ryusuke Uchida , Kazufumi Sato
发明人： Katsumi Oomori , Hiroto Yukawa , Ryusuke Uchida , Kazufumi Sato
IPC分类号： G03F726
CPC分类号： G03F7/38 , G03F7/0045 , G03F7/039
摘要： Disclosed is a method for forming an extremely finely patterned resist layer on a substrate surface by using a positive-working chemical-amplification photoresist composition in the manufacturing process of semiconductor devices. The method for the formation of a patterned resist layer comprises the steps of: (1) forming, on a substrate, a layer of a photoresist composition comprising: (A) a copolymeric resin consisting of (a) from 50 to 85% by moles of hydroxyl group-containing styrene units, (b) from 15 to 35% by moles of styrene units and (c) from 2 to 20% by moles of acrylate or methacrylate ester units each having a solubility-reducing group capable of being eliminated in the presence of an acid; and (B) a radiation-sensitive acid-generating agent which is an onium salt containing a fluoroalkyl sulfonate ion having 1 to 10 carbon atoms as the anion such as bis(4-tert-butylphenyl) iodonium nonafluorobutane sulfonate; (2) subjecting the photoresist layer to a first heat treatment at a temperature in the range from 120° C. to 140° C.; (3) subjecting the photoresist layer to pattern-wise exposure to light; (4) subjecting the photoresist layer to a second heat treatment at a temperature in the range from 110° C. to 130° C. but lower than the temperature of the first heat treatment; and (5) subjecting the photoresist layer to a development treatment.
摘要翻译：公开了通过在半导体器件的制造过程中使用正性化学扩增光致抗蚀剂组合物在基板表面上形成极细图案化的抗蚀剂层的方法。用于形成图案化抗蚀剂层的方法包括以下步骤：（1）在基材上形成光致抗蚀剂组合物层，该层包含：（A）由（a）50-85摩尔％的含羟基的苯乙烯单元，（b）15〜35摩尔％的苯乙烯单元，和（c）2〜20摩尔％的具有能够除去的溶解性降低基团的丙烯酸酯或甲基丙烯酸酯单元酸的存在; 和（B）辐射敏感的酸产生剂，其是含有具有1-10个碳原子的氟烷基磺酸根离子作为阴离子的鎓盐，例如双（4-叔丁基苯基）碘鎓九氟丁烷磺酸盐; （2）在120℃至140℃的温度下对光致抗蚀剂层进行第一次热处理; （3）对光致抗蚀剂层进行图案曝光; （4）使光致抗蚀剂层在110℃至130℃的温度下进行第二次热处理，但低于第一次热处理的温度; 和（5）对光致抗蚀剂层进行显影处理。

9. 发明授权

US5976760A Chemical-sensitization resist composition 失效
标题翻译：化学增感抗蚀剂组合物
公开(公告)号：US5976760A
公开(公告)日：1999-11-02
申请号：US898105
申请日：1997-07-22
申请人： Katsumi Oomori , Hideo Hada , Fumitake Kaneko , Mitsuru Sato , Kazufumi Sato , Toshimasa Nakayama
发明人： Katsumi Oomori , Hideo Hada , Fumitake Kaneko , Mitsuru Sato , Kazufumi Sato , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/038 , G03F7/039 , H01L21/027 , G03C1/492
CPC分类号： G03F7/0045 , Y10S430/12 , Y10S430/122
摘要： Proposed is a novel chemical-sensitization resist composition capable of giving a positively or negatively patterned resist layer of excellent pattern resolution and cross sectional profile of the patterned resist layer with high sensitivity. Characteristically, the resist composition is formulated, as combined with a resinous ingredient which is subject to changes in the solubility behavior in an alkaline developer solution by interaction with an acid, with a specific oximesulfonate compound as the radiation-sensitive acid-generating agent represented by the general formulaR.sup.1 --C(CN).dbd.N--O--SO.sub.2 --R.sup.2,in which R.sup.1 is an inert organic group and R.sup.2 is an unsubstituted or substituted polycyclic monovalent hydrocarbon group selected from the group consisting of polycyclic aromatic hydrocarbon groups such as naphthyl and polycyclic non-aromatic hydrocarbon groups such as a terpene or camphor residue.
摘要翻译：提出了一种能够以高灵敏度赋予图案化抗蚀剂层优异图案分辨率和截面轮廓的正或负图案化抗蚀剂层的新型化学增感抗蚀剂组合物。特别地，将抗蚀剂组合物配制成与通过与酸相互作用而在碱性显影剂溶液中溶解度行为发生变化的树脂成分与特定的肟磺酸酯化合物作为辐射敏感性产酸剂，通式为R1-C（CN）= NO-SO2-R2，其中R1为惰性有机基团，R2为未取代或取代的多环一价烃基，选自多环芳烃基如萘基和多环非芳族烃基如萜烯或樟脑残基。

10. 发明授权

US06548229B2 Positive-working chemical-amplification photoresist composition and method for forming a resist pattern using the same 有权
公开(公告)号：US06548229B2
公开(公告)日：2003-04-15
申请号：US09903586
申请日：2001-07-13
申请人： Katsumi Oomori , Hiroto Yukawa , Ryusuke Uchida , Kazufumi Sato
发明人： Katsumi Oomori , Hiroto Yukawa , Ryusuke Uchida , Kazufumi Sato
IPC分类号： G03F730
CPC分类号： G03F7/0392 , Y10S430/124
摘要： Disclosed is a novel positive-working chemical-amplification photoresist composition capable of giving an extremely finely patterned resist layer in the manufacturing process of semiconductor devices and a method for forming a finely patterned resist layer therewith. The photoresist composition comprises: (A) 100 parts by weight of a copolymeric resin consisting of from 50 to 85% by moles of (a) hydroxyl group-containing styrene units, from 15 to 35% by moles of (b) styrene units and from 2 to 20% by moles of (c) tert-butyl (meth)acrylate units; and (B) from 1 to 20 parts by weight of a radiation-sensitive acid-generating agent which is an onium salt containing a fluoroalkyl sulfonate ion having 1 to 10 carbon atoms as the anion such as diphenyliodonium trifluoromethane sulfonate. In the pattern-forming method with the photoresist composition, the photoresist coating layer is subjected to heat treatments before and after the pattern-wise exposure to light at a relatively low temperature of 100-110 ° C. so that a satisfactory patterning can be accomplished even for an isolated pattern having a line width as small as 0.15 &mgr;m.

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