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1. 发明授权

US07816072B2 Positive resist composition and method for forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07816072B2
公开(公告)日：2010-10-19
申请号：US11913306
申请日：2006-04-26
申请人： Hiroshi Shimbori
发明人： Hiroshi Shimbori
IPC分类号： G03F7/00 , G03F7/20
CPC分类号： G03F7/0392 , Y10S430/106 , Y10S430/114
摘要： A positive resist composition for producing MEMS using an electron beam, the composition comprising a resin component (A) that displays increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid upon irradiation, wherein the resin component (A) is a resin prepared by protecting a portion of all the hydroxyl groups within an alkali-soluble novolak resin with acid-dissociable, dissolution-inhibiting groups.
摘要翻译：一种用于使用电子束制造MEMS的正性抗蚀剂组合物，所述组合物包含在酸作用下显示增加的碱溶性的树脂组分（A）和在照射时产生酸的酸产生剂组分（B），其中所述树脂组分（A）是通过用酸解离的溶解抑制基团保护碱溶性酚醛清漆树脂中的全部羟基的一部分而制备的树脂。

2. 发明申请

US20060281023A1 Negative photoresist composition 审中-公开
标题翻译：负光致抗蚀剂组合物
公开(公告)号：US20060281023A1
公开(公告)日：2006-12-14
申请号：US10556297
申请日：2004-05-13
申请人： Takako Hirosaki , Hiroshi Shimbori
发明人： Takako Hirosaki , Hiroshi Shimbori
IPC分类号： G03C1/00
CPC分类号： G03F7/0045 , G03F7/0382 , G03F7/11
摘要： There is provided a negative photoresist composition, which is used in a method of forming a pattern in which an underlayer film is provided on a substrate, a photoresist film formed from the negative photoresist composition is provided on top of the underlayer film, the photoresist film is selectively exposed, and the underlayer film and the photoresist film are then simultaneously subjected to a developing treatment, and which enables favorable resolution to be achieved. This composition includes (A) an alkali-soluble resin, (B) an acid generator that generates acid on irradiation, and (C) a cross-linking agent, and the acid generator (B) includes an onium salt containing a cation with no hydrophilic groups.
摘要翻译：提供了一种负型光致抗蚀剂组合物，其用于形成其中在基板上设置下层膜的图案的方法，由底层光致抗蚀剂组合物形成的光致抗蚀剂膜设置在下层膜的顶部上，光致抗蚀剂膜选择性地曝光，然后同时对下层膜和光致抗蚀剂膜进行显影处理，并且能够实现良好的分辨率。该组合物包含（A）碱溶性树脂，（B）照射时产生酸的酸发生剂，（C）交联剂，酸产生剂（B）包含含有阳离子的鎓盐亲水基团。

3. 发明申请

US20090081590A1 NEGATIVE RESIST COMPOSITION AND PROCESS FOR FORMING RESIST PATTERNS 审中-公开
标题翻译：负面影响组成和形成耐力模式的过程
公开(公告)号：US20090081590A1
公开(公告)日：2009-03-26
申请号：US11914123
申请日：2006-04-18
申请人： Hiroshi Shimbori
发明人： Hiroshi Shimbori
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0382 , B82Y10/00 , G11B5/3163 , G11B5/3903
摘要： A negative resist composition is provided wherein the composition has the sensitivity to g-rays, i-rays, KrF excimer lasers and electron rays, and can be used for mix and match wherein exposure is conducted using at least two exposure light sources selected form g-rays, i-rays, KrF excimer lasers and electron rays. Furthermore, a negative resist composition and a resist pattern forming method are also proposed wherein a resist pattern having excellent high resolution and excellent plating resistance can be formed, and they can be used for manufacturing MEMS. That is, the present invention proposes: a negative resist composition which is used for a process in which at least two exposure light sources selected from g-rays, i-rays, KrF excimer lasers and electron rays are used and comprises an alkali-soluble resin component (A), acid generator component (B), which generates acid due to exposure to g-rays, i-rays, KrF excimer lasers and electron rays, and a crosslinking agent (C); and a negative resist composition which is used for manufacturing MEMS and comprises an alkali-soluble novolak resin (A), an acid generator component (B) which generates an acid due to the exposure of radiation and a crosslinking agent component (C).
摘要翻译：提供了一种负型抗蚀剂组合物，其中组合物具有对g射线，i射线，KrF准分子激光器和电子射线的敏感性，并且可以用于混合和匹配，其中使用至少两种选自形式的曝光光源进行曝光射线，i射线，KrF准分子激光器和电子射线。此外，还提出了负光刻胶组合物和抗蚀剂图案形成方法，其中可以形成具有优异的高分辨率和优异的电镀电阻的抗蚀剂图案，并且它们可以用于制造MEMS。也就是说，本发明提出：使用负光刻胶组合物，其用于使用从g射线，i射线，KrF准分子激光器和电子射线中选出的至少两种曝光光源并且包含碱溶性由于暴露于g射线，i射线，KrF准分子激光器和电子射线而产生酸的树脂组分（A），酸产生剂组分（B）和交联剂（C）; 以及用于制造MEMS的负型抗蚀剂组合物，其包含碱溶性酚醛清漆树脂（A），由于辐射而产生酸的酸产生剂组分（B）和交联剂组分（C）。

4. 发明授权

US07422839B2 Resin for positive resist composition, and positive resist composition using the same, laminate and method for forming resist pattern 有权
标题翻译：用于正型抗蚀剂组合物的树脂和使用其的正性抗蚀剂组合物，层压体和形成抗蚀剂图案的方法
公开(公告)号：US07422839B2
公开(公告)日：2008-09-09
申请号：US10561760
申请日：2004-07-05
申请人： Hiroshi Shimbori
发明人： Hiroshi Shimbori
IPC分类号： G03C1/76 , G03F7/09 , G03F7/20 , G03F7/30 , G03F7/039
CPC分类号： C08F212/14 , C08K5/0008 , C08K5/36 , C08L2203/00 , C08L2205/00 , G03F7/0392 , Y10S430/12 , Y10S430/122 , Y10S430/126 , C08L25/18 , C08F212/08
摘要： The use of a positive resist composition that includes a resin with a specific structure improves the resolution and yields a resist pattern with a favorable shape. In addition, when a resist layer is formed on either a magnetic film or a metallic oxidation prevention film formed on the magnetic film, the layer is less prone to tailing and undercutting phenomena.
摘要翻译：使用包含具有特定结构的树脂的正型抗蚀剂组合物提高了分辨率并产生具有良好形状的抗蚀剂图案。此外，当在形成于磁性膜上的磁性膜或金属氧化防止膜上形成抗蚀剂层时，该层不易发生拖尾和底切现象。

5. 发明授权

US07318992B2 Lift-off positive resist composition 有权
标题翻译：剥离正性抗蚀剂组合物
公开(公告)号：US07318992B2
公开(公告)日：2008-01-15
申请号：US11091666
申请日：2005-03-28
申请人： Daisuke Kawana , Tomotaka Yamada , Hiroshi Shimbori , Koki Tamura , Tomoyuki Ando , Takayuki Hosono
发明人： Daisuke Kawana , Tomotaka Yamada , Hiroshi Shimbori , Koki Tamura , Tomoyuki Ando , Takayuki Hosono
IPC分类号： G03F7/039
CPC分类号： G03F7/0045 , G03F7/0757
摘要： A lift-off positive resist composition capable of forming a fine lift-off pattern is provided. This composition comprises a base resin component (A) and an acid generator component (B) generating an acid under exposure, wherein the base resin component (A) is a silicone resin.
摘要翻译：提供能够形成微细剥离图案的剥离正型抗蚀剂组合物。该组合物包含产生暴露酸的基础树脂成分（A）和产酸成分（B），其中，所述基础树脂成分（A）为有机硅树脂。

6. 发明授权

US08133653B2 Positive resist composition for forming thick-film resist, thick-film resist laminate, and method of forming resist pattern 有权
标题翻译：用于形成厚膜抗蚀剂的正性抗蚀剂组合物，厚膜抗蚀剂层压体以及形成抗蚀剂图案的方法
公开(公告)号：US08133653B2
公开(公告)日：2012-03-13
申请号：US12162775
申请日：2007-01-31
申请人： Hiroshi Shimbori , Masahiro Masujima , Toshihiro Yamaguchi , Sachiko Yoshizawa
发明人： Hiroshi Shimbori , Masahiro Masujima , Toshihiro Yamaguchi , Sachiko Yoshizawa
IPC分类号： G03F7/028 , G03F7/039 , G03F7/26
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0046 , G11B5/3163 , Y10S430/122 , Y10S430/126 , Y10T428/265
摘要： A positive resist composition for forming a thick-film resist having a film thickness of 1 to 15 μm, the composition comprising: a resin component (A) that includes a polymer compound (A1), which has a weight average molecular weight of 20,000 to 50,000, and includes a structural unit (a1) derived from a hydroxystyrene and a structural unit (a2) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group, an acid generator component (B) that generates acid upon exposure and includes an onium salt-based acid generator having an anion moiety represented by general formula (I): R4″SO3− (wherein, R4″ represents a linear or branched alkyl group or fluoroalkyl group of 4 carbon atoms), and a nitrogen-containing organic compound (D) that includes a tertiary aliphatic amine.
摘要翻译：一种用于形成膜厚度为1〜15μm的厚膜抗蚀剂的正性抗蚀剂组合物，其组成包括：包含高分子化合物（A1）的树脂组分（A），其重均分子量为20,000至 50,000，并且包括衍生自羟基苯乙烯的结构单元（a1）和衍生自含有酸解离性，溶解抑制基团的丙烯酸酯的结构单元（a2），在曝光时产生酸的酸产生剂组分（B），并且包含具有由通式（I）表示的阴离子部分的鎓盐类酸发生剂：R4“SO3-（其中R4表示4个碳原子的直链或支链烷基或氟烷基）和含氮有机化合物（D），其包括叔脂族胺。

7. 发明申请

US20050227171A1 Lift-off positive resist composition 有权
标题翻译：剥离正性抗蚀剂组合物
公开(公告)号：US20050227171A1
公开(公告)日：2005-10-13
申请号：US11091666
申请日：2005-03-28
申请人： Daisuke Kawana , Tomotaka Yamada , Hiroshi Shimbori , Koki Tamura , Tomoyuki Ando , Takayuki Hosono
发明人： Daisuke Kawana , Tomotaka Yamada , Hiroshi Shimbori , Koki Tamura , Tomoyuki Ando , Takayuki Hosono
IPC分类号： G03C1/492 , G03F7/004 , G03F7/075
CPC分类号： G03F7/0045 , G03F7/0757
摘要： A lift-off positive resist composition capable of forming a fine lift-off pattern is provided. This composition comprises a base resin component (A) and an acid generator component (B) generating an acid under exposure, wherein the base resin component (A) is a silicone resin.
摘要翻译：提供能够形成微细剥离图案的剥离正型抗蚀剂组合物。该组合物包含产生暴露酸的基础树脂成分（A）和产酸成分（B），其中，所述基础树脂成分（A）为有机硅树脂。

8. 发明申请

US20090023102A1 POSITIVE RESIST COMPOSITION FOR FORMING THICK-FILM RESIST, THICK-FILM RESIST LAMINATE, AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：用于形成薄膜电阻的抗静电组合物，薄膜层压材料和形成电阻图案的方法
公开(公告)号：US20090023102A1
公开(公告)日：2009-01-22
申请号：US12162775
申请日：2007-01-31
申请人： Hiroshi Shimbori , Masahiro Masujima , Toshihiro Yamaguchi , Sachiko Yoshizawa
发明人： Hiroshi Shimbori , Masahiro Masujima , Toshihiro Yamaguchi , Sachiko Yoshizawa
IPC分类号： G03F7/20 , G03C1/73
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0046 , G11B5/3163 , Y10S430/122 , Y10S430/126 , Y10T428/265
摘要： A positive resist composition for forming a thick-film resist having a film thickness of 1 to 15 μm, the composition comprising: a resin component (A) that includes a polymer compound (A1), which has a weight average molecular weight of 20,000 to 50,000, and includes a structural unit (a1) derived from a hydroxystyrene and a structural unit (a2) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group, an acid generator component (B) that generates acid upon exposure and includes an onium salt-based acid generator having an anion moiety represented by general formula (I): R4″SO3− (wherein, R4″ represents a linear or branched alkyl group or fluoroalkyl group of 4 carbon atoms), and a nitrogen-containing organic compound (D) that includes a tertiary aliphatic amine.
摘要翻译：一种用于形成膜厚为1-15μm的厚膜抗蚀剂的正性抗蚀剂组合物，该组合物包括：包含高分子化合物（A1）的树脂组分（A），其重均分子量为20,000至 50,000，并且包括衍生自羟基苯乙烯的结构单元（a1）和衍生自含有酸解离性，溶解抑制基团的丙烯酸酯的结构单元（a2），在曝光时产生酸的酸产生剂组分（B），并且包含具有由通式（I）表示的阴离子部分的鎓盐类酸发生剂：R4''SO3-（其中，R4“表示4个碳原子的直链或支链烷基或氟代烷基）和含氮有机化合物（D），其包含叔脂族胺。

9. 发明授权

US07172848B2 Chemical amplification type positive resist composition 有权
标题翻译：化学放大型正光刻胶组合物
公开(公告)号：US07172848B2
公开(公告)日：2007-02-06
申请号：US10548843
申请日：2004-03-11
申请人： Hiroshi Shimbori
发明人： Hiroshi Shimbori
IPC分类号： G03C1/00
CPC分类号： G11B5/3903 , G03F7/0392 , G11B5/3106 , G11B5/3163 , Y10S430/114 , Y10S430/115
摘要： There is provided a positive resist composition which enables the formation of a fine resist pattern, enables the angle of the taper shape within that resist pattern to be controlled to a suitable angle, and enables the formation of a resist pattern with an excellent depth width of focus. This positive resist composition is formed from a chemically amplified positive resist composition in which the light transmittance of a resist film of thickness 0.3 μm, relative to light of wavelength 248 nm, is within a range from 20 to 75%.
摘要翻译：提供了能够形成精细抗蚀剂图案的正性抗蚀剂组合物，能够将抗蚀剂图案内的锥形形状的角度控制在适当的角度，并且能够形成具有优异的深度宽度的抗蚀剂图案焦点。该正性抗蚀剂组合物由化学放大正性抗蚀剂组合物形成，其中相对于波长248nm的光，厚度为0.3μm的抗蚀剂膜的光透射率在20至75％的范围内。

10. 发明授权

US5667729A Coating material for inner coat of cathode-ray tube 失效
标题翻译：阴极射线管内涂层涂料
公开(公告)号：US5667729A
公开(公告)日：1997-09-16
申请号：US627681
申请日：1996-04-02
申请人： Hiroshi Shimbori
发明人： Hiroshi Shimbori
IPC分类号： C09D5/24 , H01B1/24 , H01J29/88 , H01B1/04 , C04B14/04 , C09C1/46
CPC分类号： C09D5/24 , H01B1/24 , H01J29/88
摘要： Disclosed is a coating material for forming an electrically conductive inner coat. The coating material contains graphite particles, filler particles, an aqueous medium a dispersant and water-glass. The filler particle has a core and a membrane which covers the core. The core is composed of metallic oxide or metallic carbide, and the membrane is composed of alumina and silica, in which the ratio of the amount of the alumina to the amount of the membrane is within a range of 20 to 60% by weight. If the core is iron oxide, the used filler particles have at least 4% by weight of the membrane which contains 20 to 90% by weight of alumina and silica.
摘要翻译：公开了一种用于形成导电内涂层的涂料。涂料含有石墨颗粒，填料颗粒，水介质，分散剂和水玻璃。填料颗粒具有芯和覆盖芯的膜。芯由金属氧化物或金属碳化物组成，膜由氧化铝和二氧化硅构成，其中氧化铝与膜量的比例在20〜60重量％的范围内。如果芯是氧化铁，则使用的填料颗粒具有至少4重量％的膜，其含有20至90重量％的氧化铝和二氧化硅。

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