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1. 发明授权

US07407739B2 Resist developer and resist pattern formation method using same 有权
标题翻译：使用该抗蚀剂显影剂和抗蚀剂图案形成方法
公开(公告)号：US07407739B2
公开(公告)日：2008-08-05
申请号：US11239781
申请日：2005-09-29
申请人： Kazuyuki Nitta
发明人： Kazuyuki Nitta
IPC分类号： G03F7/32
CPC分类号： G03F7/322 , G03F7/0392
摘要： A resist developer capable of forming a high resolution resist pattern with good shape and little film thinning is provided, together with a resist pattern formation method using such a developer. The resist developer is an aqueous solution comprising an ammonium hydroxide represented by a general formula (I): R1nR24-nN+.OH− wherein R1 is a lower alkyl group in which the number of carbon atoms is A, R2 is a lower alkyl group in which the number of carbon atoms is B, A
摘要翻译：提供能够形成具有良好形状和薄膜变薄的高分辨率抗蚀剂图案的抗蚀剂显影剂以及使用这种显影剂的抗蚀剂图案形成方法。抗蚀剂显影剂是包含由通式（I）表示的氢氧化铵的水溶液：R 1，R 2，R 2，其中R 1是碳原子数为A的低级烷基，其中R 1为低级烷基， R 2是碳原子数为B，A

2. 发明授权

US07150956B2 Chemical amplification type positive resist composition, resist laminated material, resist pattern forming method and method of manufacturing semiconductor device 失效
标题翻译：化学放大型正型抗蚀剂组合物，抗蚀剂层压材料，抗蚀剂图案形成方法和制造半导体器件的方法
公开(公告)号：US07150956B2
公开(公告)日：2006-12-19
申请号：US11028456
申请日：2005-01-03
申请人： Kazuyuki Nitta , Takeyoshi Mimura , Satoshi Shimatani , Waki Okubo , Tatsuya Matsumi
发明人： Kazuyuki Nitta , Takeyoshi Mimura , Satoshi Shimatani , Waki Okubo , Tatsuya Matsumi
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0392 , G03F7/11 , Y10S430/106
摘要： The present invention provides a resist composition comprising (A) polyhydroxystyrene in which at least a portion of hydrogen atoms of hydroxyl groups are substituted with an acid-dissociable dissolution inhibiting group, and the solubility in an alkali solution of the polyhydroxystyrene increasing when the acid-dissociable dissolution inhibiting group is eliminated by an action of an acid, and (B) a component capable of generating an acid by irradiation with radiation, wherein a retention rate of the acid-dissociable dissolution inhibiting group of the component (A) after a dissociation test using hydrochloric acid is 40% or less, and also provides a chemical amplification type positive resist composition which contains polyhydroxystyrene in which at least a portion of hydrogen atoms of hydroxyl groups are substituted with a lower alkoxy-alkyl group having a straight-chain or branched alkoxy group, and the solubility in an alkali solution of the polyhydroxystyrene increasing when the lower alkoxy-alkyl group is eliminated by an action of an acid, in place of the component (A).
摘要翻译：本发明提供了一种抗蚀剂组合物，其包含（A）聚羟基苯乙烯，其中羟基的至少一部分氢原子被酸解离的溶解抑制基团取代，并且当所述多羟基苯乙烯的碱溶液中的溶解度增加时，通过酸的作用除去可离解的溶解抑制基团，和（B）通过辐射照射产生酸的成分，其中解离后的成分（A）的酸解离溶解抑制基团的保留率使用盐酸的试验为40％以下，并且还提供了含有聚羟基苯乙烯的化学扩增型正性抗蚀剂组合物，其中羟基的至少一部分氢原子被具有直链的低级烷氧基 - 烷基取代，支链烷氧基，并且当聚羟基苯乙烯的碱溶液中的溶解度增加时低级烷氧基 - 烷基通过酸的作用代替组分（A）而被除去。

3. 发明申请

US20050244740A1 Chemically amplified positive photo resist composition and method for forming resist pattern 有权
标题翻译：化学放大的正光致抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US20050244740A1
公开(公告)日：2005-11-03
申请号：US10522036
申请日：2004-05-19
申请人： Kenji Maruyama , Masaki Kurihara , Ken Miyagi , Satoshi Niikura , Satoshi Shimatani , Masahiro Masujima , Kazuyuki Nitta , Toshihiro Yamaguchi , Kousuke Doi
发明人： Kenji Maruyama , Masaki Kurihara , Ken Miyagi , Satoshi Niikura , Satoshi Shimatani , Masahiro Masujima , Kazuyuki Nitta , Toshihiro Yamaguchi , Kousuke Doi
IPC分类号： G03C1/492 , G03F7/039
CPC分类号： G03F7/0392 , Y10S430/106 , Y10S430/12 , Y10S430/122
摘要： The present invention provides a chemical amplification type positive photoresist composition which is excellent in storage stability as a resist solution in a bottle. A novolak resin or a hydroxystyrenic resin is reacted with a crosslinking agent to give a slightly alkali-soluble or alkali-insoluble resin having such a property that solubility in an aqueous alkali solution is enhanced in the presence of an acid, which is then dissolved in an organic solvent, together with (B) a compound generating an acid under irradiation with radiation to obtain a chemical amplification type positive photoresist composition wherein the content of an acid component is 10 ppm or less.
摘要翻译：本发明提供了作为瓶中的抗蚀剂溶液的储存稳定性优异的化学增幅型正性光致抗蚀剂组合物。将酚醛清漆树脂或羟基苯乙烯类树脂与交联剂反应，得到轻微碱溶性或碱不溶性树脂，其具有在酸存在下在碱溶液中的溶解度增强的性质，然后将其溶解于有机溶剂与（B）在辐射照射下产生酸的化合物一起获得化学扩增型正性光致抗蚀剂组合物，其中酸成分的含量为10ppm以下。

4. 发明申请

US20050170276A1 Chemical-amplification positive-working photoresist composition 审中-公开
标题翻译：化学扩增正性光刻胶组合物
公开(公告)号：US20050170276A1
公开(公告)日：2005-08-04
申请号：US10514320
申请日：2003-10-27
申请人： Kazuyuki Nitta , Naoto Motoike
发明人： Kazuyuki Nitta , Naoto Motoike
IPC分类号： G03F7/039 , G03C1/492 , H01L21/027
CPC分类号： G03F7/0392
摘要： Disclosed is a chemical-amplification positive-working photoresist composition having compliability to various types of resist patterns with excellent sensitivity and pattern resolution exhibiting high exposure margin and focusing depth latitude. Of the essential components including (A) a resin capable of being imparted with increased alkali-solubility by interacting with an acid and (B) an acid-generating compound, the component (A) is a combination of (a1) a first resin and (a2) a second resin each as a hydroxystyrene-based copolymeric resin partially substituted for the hydroxyl hydrogen atoms with acid-dissociable solubility-reducing substituent groups. Characteristically, in addition to the difference in the mass-average molecular weight being high for (a1) and low for (a2), the acid-dissociability of the substituents in the (a1) resin is higher than that in the (a2) resin as in a combination of 1-ethoxyethyl for (a1) and tetrahydropyranyl for (a2).
摘要翻译：公开了一种化学扩增正性光致抗蚀剂组合物，其具有对具有优异的灵敏度和图案分辨率的各种类型的抗蚀剂图案具有高曝光余量和聚焦深度纬度的适应性。在包括（A）能够通过与酸相互作用而赋予碱溶性增加的树脂和（B）产酸化合物的基础组分中，组分（A）是（a1）第一树脂和（a2）第二树脂，各自作为部分被羟基氢原子取代的具有酸解离性溶解性降低取代基的羟基苯乙烯类共聚树脂。特别地，除了（a1）的质量平均分子量的差异和（a2）的低分子量之外，（a1）树脂中的取代基的酸解离性高于（a2）树脂如（a1）的1-乙氧基乙基和（a2）的四氢吡喃基的组合。

5. 发明授权

US06638684B2 Photosensitive laminate, process for forming resist pattern using same and positive resist composition 失效
标题翻译：感光层压板，使用其形成抗蚀剂图案的方法和正性抗蚀剂组合物
公开(公告)号：US06638684B2
公开(公告)日：2003-10-28
申请号：US09799549
申请日：2001-03-07
申请人： Waki Okubo , Kazufumi Sato , Kazuyuki Nitta , Toshiyuki Ogata
发明人： Waki Okubo , Kazufumi Sato , Kazuyuki Nitta , Toshiyuki Ogata
IPC分类号： G03F7039
CPC分类号： G03F7/0045 , G03F7/0392 , G03F7/0395 , Y10S430/106 , Y10S430/111
摘要： A photosensitive laminate includes a substrate and a resist layer 500 to 5800 angstroms thick formed on the substrate. A composition for the resist layer includes (A) a compound which generates an acid upon irradiation with radioactive ray, (B) an alkali-soluble novolak resin, and (C) a compound having at least one acid-decomposable dissolution-inhibiting group, and the dissolution-inhibiting group is decomposable by action of an acid generated from the ingredient (A) to yield an organic carboxylic acid. This photosensitive laminate is sequentially subjected to selective exposure to KrF excimer laser light or to light having a short wavelength equal to or less than that of F2 laser, post-exposure baking, and developing with an alkali to yield a resist pattern.
摘要翻译：感光层压板包括基材和形成在基材上的500至5800埃的抗蚀剂层。抗蚀层的组合物包括（A）在放射线照射时产生酸的化合物，（B）碱溶性酚醛清漆树脂，（C）具有至少一个可酸分解溶解抑制基团的化合物，并且溶解抑制基团可以通过由成分（A）产生的酸的作用而分解，得到有机羧酸。依次对该感光性层叠体进行KrF准分子激光的选择性曝光或者等于或小于F2激光的短波长，曝光后烘烤和用碱显影以产生抗蚀剂图案的光。

6. 发明授权

US06444394B1 Positive-working photoresist composition 有权
标题翻译：正光刻胶组合物
公开(公告)号：US06444394B1
公开(公告)日：2002-09-03
申请号：US09521205
申请日：2000-03-08
申请人： Kazufumi Sato , Satoshi Maemori , Taku Nakao , Kazuyuki Nitta
发明人： Kazufumi Sato , Satoshi Maemori , Taku Nakao , Kazuyuki Nitta
IPC分类号： G03F7039
CPC分类号： G03F7/0392 , Y10S430/106
摘要： Disclosed is a novel chemical-amplification positive-working photoresist composition capable of giving a patterned resist layer with excellent properties such as photosensitivity, pattern resolution, heat resistance and cross sectional profile of the patterned resist layer. The composition is characterized by the use of, as the film-forming resinous component, a hydroxyl-containing resinous ingredient which a combination of a first resin of which from 30 to 60% the hydroxyl groups are substituted by acid-dissociable solubility-reducing groups and a second resin of which from 5 to 20% of the hydroxyl groups are substituted by acid-dissociable groups of the same kind as in the first resin a weight proportion of 1.9 to 9:1.
摘要翻译：公开了一种新颖的化学放大正性光致抗蚀剂组合物，其能够赋予具有优异性能的图案化抗蚀剂层，例如图案化抗蚀剂层的光敏性，图案分辨率，耐热性和横截面轮廓。该组合物的特征在于使用含羟基的树脂成分作为成膜树脂成分，其中第一树脂的30-60％的羟基被酸解离的溶解性降低基团取代其中5〜20％的羟基被第一树脂中相同种类的酸解离基取代的第二树脂的重量比为1.9-9:1。

7. 发明授权

US5736296A Positive resist composition comprising a mixture of two polyhydroxystyrenes having different acid cleavable groups and an acid generating compound 失效
标题翻译：包含两种具有不同的酸可分解基团的聚羟基苯乙烯和产酸化合物的混合物的正性抗蚀剂组合物
公开(公告)号：US5736296A
公开(公告)日：1998-04-07
申请号：US625931
申请日：1996-04-01
申请人： Mitsuru Sato , Kazuyuki Nitta , Akiyoshi Yamazaki , Etsuko Iguchi , Yoshika Sakai , Kazufumi Sato , Toshimasa Nakayama
发明人： Mitsuru Sato , Kazuyuki Nitta , Akiyoshi Yamazaki , Etsuko Iguchi , Yoshika Sakai , Kazufumi Sato , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106
摘要： Disclosed is an improved, chemically-amplifying positive resist composition for radiations, especially UV rays, deep-UV rays, excimer laser beams, X-rays, electron beams. The composition comprises (A) a resin component whose solubility in an alkaline aqueous solution is increased by the action of acids, (B) a compound which generates an acid when exposed to radiations, and (A) a resin component, (B) an acid-generating agent and (C) an organic carboxylic acid compound, in which said resin component (A) is a mixture comprising (a) a polyhydroxystyrene where from 10 to 60 mol % of the hydroxyl groups have been substituted by residues of a general formula (I): ##STR1## wherein R.sup.1 represents a hydrogen atom or a methyl group, R.sup.2 represents a methyl group or an ethyl group, and R.sup.3 represents a lower alkyl group having 1 to 4 carbon atoms; and (b) a polyhydroxystyrene where from 10 to 60 mol % of the hydroxyl groups have been substituted by tert-butoxycarbonyloxy groups. The composition has a high sensitivity, a high resolution, high heat resistance, good width characteristic in focus depth and good post-exposure storage stability, has good storage stability as a resist solution, and gives resist patterns with good profiles, without depending on the substrate to which it is applied. The composition is useful for forming fine patterns in producing ultra-LSIs.
摘要翻译：公开了用于辐射，特别是紫外线，深紫外线，准分子激光束，X射线，电子束的改进的化学增幅正性抗蚀剂组合物。该组合物包含（A）通过酸的作用在碱性水溶液中的溶解度增加的树脂成分，（B）暴露于辐射时产生酸的化合物，（A）树脂成分，（B）酸性发生剂和（C）有机羧酸化合物，其中所述树脂组分（A）是包含（a）多羟基苯乙烯的混合物，其中10至60mol％的羟基已被一般的残基取代式（I）：其中R 1表示氢原子或甲基，R 2表示甲基或乙基，R 3表示碳原子数1〜4的低级烷基。和（b）聚羟基苯乙烯，其中10至60摩尔％的羟基已被叔丁氧羰基氧基取代。该组合物具有高灵敏度，高分辨率，高耐热性，聚焦深度的良好宽度特性和良好的曝光后储存稳定性，作为抗蚀剂溶液具有良好的储存稳定性，并且具有良好外形的抗蚀剂图案，而不依赖于底物。该组合物可用于在制造超LSI时形成精细图案。

8. 发明授权

US5728504A Positive photoresist compositions and multilayer resist materials using the same 失效
标题翻译：正型光致抗蚀剂组合物和使用其的多层抗蚀剂材料
公开(公告)号：US5728504A
公开(公告)日：1998-03-17
申请号：US652389
申请日：1996-05-23
申请人： Hiroshi Hosoda , Satoshi Niikura , Atsushi Sawano , Tatsuya Hashiguchi , Kazuyuki Nitta , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Hiroshi Hosoda , Satoshi Niikura , Atsushi Sawano , Tatsuya Hashiguchi , Kazuyuki Nitta , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/11 , G03F7/022 , G03F7/26 , H01L21/027 , G03F7/023
CPC分类号： G03F7/022
摘要： A positive photoresist composition comprising (A) an alkali-soluble resin and (B) a light-sensitive component comprising at least one compound represented by the following general formula (I): ##STR1## where R.sup.1, R.sup.2 and R.sup.3 are each independently a hydrogen atom, an alkyl group having 1-3 carbon atoms or an alkoxy group having 1-3 carbon atoms; R.sup.4 is a hydrogen atom or an alkyl group having 1-3 carbon atoms; a, b and c are an integer of 1-3; l, m and n are an integer of 1-3, in which at least part of the hydroxyl groups present are esterified with a quinonediazidosulfonic acid and a sulfonic acid which has a group represented by the following formula (II): --SO.sub.2 --R.sup.5 (II) where R.sup.5 is a substituted or unsubstituted alkyl group, an alkenyl group or a substituted or unsubstituted aryl group, thereby forming a mixed ester, and a multilayer resist material in which a positive photoresist layer formed of said positive photoresist composition is provided on an anti-reflective coating over a substrate are capable of forming high-resolution resist patterns with good cross-sectional profiles and permit a wider margin of exposure and better depth-of-focus characteristics.
摘要翻译：一种正性光致抗蚀剂组合物，其包含（A）碱溶性树脂和（B）包含至少一种由以下通式（I）表示的化合物的光敏性组分：其中R 1，R 2和R 3是各自独立地为氢原子，具有1-3个碳原子的烷基或具有1-3个碳原子的烷氧基; R4是氢原子或具有1-3个碳原子的烷基; a，b和c为1-3的整数; l，m和n是1-3的整数，其中存在的羟基的至少一部分与醌二叠氮磺酸和具有下式（II）表示的基团的磺酸酯化：-SO 2 -R 5 （II）其中R5是取代或未取代的烷基，烯基或取代或未取代的芳基，从而形成混合酯，以及多层抗蚀剂材料，其中由所述正性光致抗蚀剂组合物形成的正性光致抗蚀剂层设置在衬底上的抗反射涂层能够形成具有良好横截面轮廓的高分辨率抗蚀剂图案，并允许更宽的曝光余量和更好的聚焦深度特性。

9. 发明授权

US07358028B2 Chemically amplified positive photo resist composition and method for forming resist pattern 有权
标题翻译：化学放大的正光致抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07358028B2
公开(公告)日：2008-04-15
申请号：US10522036
申请日：2004-05-19
申请人： Kenji Maruyama , Masaki Kurihara , Ken Miyagi , Satoshi Niikura , Satoshi Shimatani , Masahiro Masujima , Kazuyuki Nitta , Toshihiro Yamaguchi , Kousuke Doi
发明人： Kenji Maruyama , Masaki Kurihara , Ken Miyagi , Satoshi Niikura , Satoshi Shimatani , Masahiro Masujima , Kazuyuki Nitta , Toshihiro Yamaguchi , Kousuke Doi
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38
CPC分类号： G03F7/0392 , Y10S430/106 , Y10S430/12 , Y10S430/122
摘要： The present invention provides a chemical amplification type positive photoresist composition which is excellent in storage stability as a resist solution in a bottle. A novolak resin or a hydroxystyrenic resin is reacted with a crosslinking agent to give a slightly alkali-soluble or alkali-insoluble resin having such a property that solubility in an aqueous alkali solution is enhanced in the presence of an acid, which is then dissolved in an organic solvent, together with (B) a compound generating an acid under irradiation with radiation to obtain a chemical amplification type positive photoresist composition wherein the content of an acid component is 10 ppm or less.
摘要翻译：本发明提供了作为瓶中的抗蚀剂溶液的储存稳定性优异的化学增幅型正性光致抗蚀剂组合物。将酚醛清漆树脂或羟基苯乙烯类树脂与交联剂反应，得到轻微碱溶性或碱不溶性树脂，其具有在酸存在下在碱溶液中的溶解度增强的性质，然后将其溶解于有机溶剂与（B）在辐射照射下产生酸的化合物一起获得化学扩增型正性光致抗蚀剂组合物，其中酸成分的含量为10ppm以下。

10. 发明授权

US07329478B2 Chemical amplified positive photo resist composition and method for forming resist pattern 有权
标题翻译：化学放大正光致抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07329478B2
公开(公告)日：2008-02-12
申请号：US10528617
申请日：2004-05-20
申请人： Yusuke Nakagawa , Shinichi Hidesaka , Kenji Maruyama , Satoshi Shimatani , Masahiro Masujima , Kazuyuki Nitta
发明人： Yusuke Nakagawa , Shinichi Hidesaka , Kenji Maruyama , Satoshi Shimatani , Masahiro Masujima , Kazuyuki Nitta
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0392 , G03F7/168 , Y10S430/106
摘要： To provide a chemical amplification type positive photoresist composition, which has high sensitivity, high heat resistance and high resolution (high contrast) and is capable of suppressing an undulation phenomenon, and a method for formation of a resist pattern, a chemical amplification type positive photoresist composition comprising (A) an alkali soluble resin comprising a hydroxystyrene constituent unit (a1) and a styrene constituent unit (a2), (B) a crosslinking agent, (C) a photo acid generator, and an organic solvent is prepared and a resist pattern is formed by using the same.
摘要翻译：为了提供具有高灵敏度，高耐热性和高分辨率（高对比度）并且能够抑制起伏现象的化学放大型正性光致抗蚀剂组合物，以及形成抗蚀剂图案的方法，化学放大型正性光致抗蚀剂制备包含（A）包含羟基苯乙烯构成单元（a1）和苯乙烯构成单元（a2）的碱溶性树脂，（B）交联剂，（C）光酸反应器和有机溶剂的组合物，通过使用它们形成图案。

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