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1. 发明申请

US20070281098A1 Composition for forming antireflection coating 审中-公开
标题翻译：用于形成抗反射涂层的组合物
公开(公告)号：US20070281098A1
公开(公告)日：2007-12-06
申请号：US11882254
申请日：2007-07-31
申请人： Taku Hirayama , Tomotaka Yamada , Daisuke Kawana , Kouki Tamura , Kazufumi Sato
发明人： Taku Hirayama , Tomotaka Yamada , Daisuke Kawana , Kouki Tamura , Kazufumi Sato
IPC分类号： B05D3/00
CPC分类号： C08G77/14 , C08G77/04 , C08G77/70 , C09D5/32 , C09D183/04 , C09D183/06 , G02B1/111 , G03F7/0757 , G03F7/091 , C08L2666/04
摘要： A composition for forming an antireflection coating, characterized in that it comprises an organic solvent and, dissolved therein, (A) a ladder silicone copolymer containing (a1) 10 to 90 mole % of a (hydroxyphenylalkyl)silsesquioxane unit, (a2) 0 to 50 mole % of a (alkoxyphenylalkyl)silsesquioxane unit and (a3) 10 to 90 mole % of an alkyl or phenylsilsesquioxane unit, (B) an acid generator generating an acid upon exposure to heat or light, and (C) a crosslinking agent, and is capable of forming an antireflection coating exhibiting an optional parameter (k value) for an ArF laser of the range of 0.002 to 0.95. The composition is soluble in an organic solvent, can be applied by a conventional spin coating method with ease, has good storage stability, and can exhibit an adjusted preventive capability for reflection through the introduction of a chromophoric group absorbing a radiation ray thereto.
摘要翻译：一种用于形成抗反射涂层的组合物，其特征在于，其包含有机溶剂，并且溶解于其中（A）含有（〜1/10）10〜90摩尔％的（羟基苯基烷基）倍半硅氧烷单元，（a 2 O 2）0〜50摩尔％的（烷氧基苯基烷基）倍半硅氧烷单元和（〜3）10〜90摩尔％的烷基或苯基倍半硅氧烷单元，（B）在暴露于热或光时产生酸的酸发生剂，和（C）交联剂，并且能够形成对于0.002至约0.002的范围的ArF激光显示可选参数（k值）的抗反射涂层 0.95。该组合物可溶于有机溶剂，可以通过常规的旋涂法容易地进行涂布，具有良好的储存稳定性，并且通过引入吸收辐射线的发色团，可以显示调整的防止反射能力。

2. 发明申请

US20060021964A1 Composition for forming antireflection coating 审中-公开
标题翻译：用于形成抗反射涂层的组合物
公开(公告)号：US20060021964A1
公开(公告)日：2006-02-02
申请号：US11237913
申请日：2005-09-29
申请人： Taku Hirayama , Tomotaka Yamada , Daisuke Kawana , Kouki Tamura , Kazufumi Sato
发明人： Taku Hirayama , Tomotaka Yamada , Daisuke Kawana , Kouki Tamura , Kazufumi Sato
IPC分类号： H01B13/00
CPC分类号： C08G77/14 , C08G77/04 , C08G77/70 , C09D5/32 , C09D183/04 , C09D183/06 , G02B1/111 , G03F7/0757 , G03F7/091 , C08L2666/04
摘要： A composition for forming an antireflection coating, characterized in that it comprises an organic solvent and, dissolved therein, (A) a ladder silicone copolymer containing (a1) 10 to 90 mole % of a (hydroxyphenylalkyl)silsesquioxane unit, (a2) 0 to 50 mole % of a (alkoxyphenylalkyl)silsesquioxane unit and (a3) 10 to 90 mole % of an alkyl or phenylsilsesquioxane unit, (B) an acid generator generating an acid upon exposure to heat or light, and (C) a crosslinking agent, and is capable of forming an antireflection coating exhibiting an optional parameter (k value) for an ArF laser of the range of 0.002 to 0.95. The composition is soluble in an organic solvent, can be applied by a conventional spin coating method with ease, has good storage stability, and can exhibit an adjusted preventive capability for reflection through the introduction of a chromophoric group absorbing a radiation ray thereto.
摘要翻译：一种用于形成抗反射涂层的组合物，其特征在于，其包含有机溶剂，并且溶解于其中（A）含有（〜1/10）10〜90摩尔％的（羟基苯基烷基）倍半硅氧烷单元，（a 2 O 2）0〜50摩尔％的（烷氧基苯基烷基）倍半硅氧烷单元和（〜3）10〜90摩尔％的烷基或苯基倍半硅氧烷单元，（B）在暴露于热或光时产生酸的酸发生剂，和（C）交联剂，并且能够形成对于0.002至约0.002的范围的ArF激光显示可选参数（k值）的抗反射涂层 0.95。该组合物可溶于有机溶剂，可以通过常规的旋涂法容易地进行涂布，具有良好的储存稳定性，并且通过引入吸收辐射线的发色团，可以显示调整的防止反射能力。

3. 发明申请

US20060003252A1 Chemical amplification type silicone based positive photoresist composition 审中-公开
标题翻译：化学放大型硅胶正性光致抗蚀剂组合物
公开(公告)号：US20060003252A1
公开(公告)日：2006-01-05
申请号：US10537290
申请日：2003-12-01
申请人： Taku Hirayama , Tomotaka Yamada , Daisuke Kawana , Kouki Tamura , Kazufumi Sato
发明人： Taku Hirayama , Tomotaka Yamada , Daisuke Kawana , Kouki Tamura , Kazufumi Sato
IPC分类号： G03F7/021
CPC分类号： G03F7/0757 , C08G77/04 , C08L83/06 , G03F7/0045
摘要： A chemical-amplification type silicone-based positive-working resist composition that can be prepared from compounds of good availability as the base materials through simple means and can provide a bilayer resist material from which a fine pattern of high resolution, high aspect ratio, desirable cross-sectional profile and low line edge roughness can be formed. In particular, a chemical-amplification type positive-working resist composition comprising an alkali soluble resin (A) and a photoacid generator (B) wherein a ladder-type silicone copolymer comprising (hydroxyphenylalkyl)silsesquioxane units (a1), (alkoxyphenylalkyl)silsesquioxane units (a2) and alkyl- or phenylsilsesquioxane units (a3) is used as the alkali soluble resin (A). The copolymer wherein, in the component (A), the units (a3) are phenylsilsesquioxane units is a novel compound.
摘要翻译：一种化学扩增型硅氧烷正性抗蚀剂组合物，其可以通过简单的方法由具有良好可用性的化合物制备，并且可以提供双层抗蚀剂材料，由此可以获得高分辨率，高纵横比的精细图案可以形成横截面轮廓和低线边缘粗糙度。特别是包含碱溶性树脂（A）和光酸产生剂（B）的化学增幅型正性抗蚀剂组合物，其中包含（羟基苯基烷基）倍半硅氧烷单元（a 1 SUB / >），（烷氧基苯基烷基）倍半硅氧烷单元（a 2 N 2）和烷基 - 或苯基倍半硅氧烷单元（a 3 SUB）用作碱溶性树脂（A）。在组分（A）中，单元（a 3 SUB）是苯基倍半硅氧烷单元的共聚物是新的化合物。

4. 发明申请

US20070009828A1 Positive resist composition, resist laminates and process for forming resist patterns 审中-公开
标题翻译：正抗蚀剂组合物，抗蚀剂层压体和形成抗蚀剂图案的方法
公开(公告)号：US20070009828A1
公开(公告)日：2007-01-11
申请号：US10560126
申请日：2004-06-11
申请人： Koki Tamura , Daisuke Kawana , Tomotaka Yamada , Takayuki Hosono , Taku Hirayama , Kazufumi Sato , Hiroshi Shimbori , Tomoyuki Ando
发明人： Koki Tamura , Daisuke Kawana , Tomotaka Yamada , Takayuki Hosono , Taku Hirayama , Kazufumi Sato , Hiroshi Shimbori , Tomoyuki Ando
IPC分类号： G03C1/00
CPC分类号： G03F7/0757 , G03F7/0045
摘要： A positive resist composition, comprising a resin component (A) that exhibits increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure, wherein the component (A) includes either a silsesquioxane resin (A1) containing structural units (a1) represented by a general formula (I) shown below, structural units (a2) represented by a general formula (II) shown below, and structural units (a3) represented by a general formula (III) shown below, or a silsesquioxane resin (A2) containing structural units (al) represented by the general formula (I) shown below, and structural units (a2′) represented by a general formula (II′) shown below. In the general formulas below, R1 represents a straight-chain or branched alkylene group of 1 to 5 carbon atoms, R2 represents a straight-chain or branched alkylene group of 1 to 5 carbon atoms, R3 represents an acid dissociable, dissolution inhibiting group, R6 represents an alkyl group of 1 to 5 carbon atoms, R7 represents either an alkyl group of 1 to 5 carbon atoms or a hydrogen atom, and R8 represents an alicyclic hydrocarbon group of 5 to 15 carbon atoms.
摘要翻译：含有在酸作用下表现出增加的碱溶性的树脂组分（A）的阳性抗蚀剂组合物和暴露时产生酸的酸产生剂组分（B），其中组分（A）包括倍半硅氧烷树脂（A1）），由下述通式（I）表示的结构单元（a1），由下述通式（II）表示的结构单元（a2）和由以下所示的通式（III）表示的结构单元（a3），或含有下述通式（I）表示的结构单元（a1）的倍半硅氧烷树脂（A2）和由下述通式（II'）表示的结构单元（a2'）。在下列通式中，R 1表示1至5个碳原子的直链或支链亚烷基，R 2表示直链或支链的亚烷基， 1至5个碳原子，R 3表示酸解离的溶解抑制基团，R 6表示1至5个碳原子的烷基，R 7， / SUP>表示1〜5个碳原子的烷基或氢原子，R 8表示5〜15个碳原子的脂环族烃基。

5. 发明申请

US20090068586A1 SILSESQUIOXANE RESIN, POSITIVE RESIST COMPOSITION, RESIST LAMINATE, AND METHOD OF FORMING RESIST PATTERN 审中-公开
标题翻译： SILSESQUIOXANE树脂，积极抵抗组合物，耐腐蚀层压材料和形成耐力图案的方法
公开(公告)号：US20090068586A1
公开(公告)日：2009-03-12
申请号：US12247876
申请日：2008-10-08
申请人： Tsuyoshi Nakamura , Koki Tamura , Tomotaka Yamada , Taku Hirayama , Daisuke Kawana , Takayuki Hosono
发明人： Tsuyoshi Nakamura , Koki Tamura , Tomotaka Yamada , Taku Hirayama , Daisuke Kawana , Takayuki Hosono
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： C08G77/04 , C08G77/24 , G03F7/0392 , G03F7/0757 , Y10T428/31663
摘要： A silsesquioxane resin, a positive resist composition, a resist laminate, and a method of forming a resist pattern that are capable of suppressing a degas phenomenon are provided, and a silicon-containing resist composition and a method of forming a resist pattern that are ideally suited to immersion lithography are also provided. The silsesquioxane resin includes structural units represented by the general shown below [wherein, R1 and R2 each represent, independently, a straight chain, branched, or cyclic saturated aliphatic hydrocarbon group; R3 represents an acid dissociable, dissolution inhibiting group containing a hydrocarbon group that includes an aliphatic monocyclic or polycyclic group; R4 represents a hydrogen atom, or a straight chain, branched, or cyclic alkyl group; X represents an alkyl group of 1 to 8 carbon atoms in which at least one hydrogen atom has been substituted with a fluorine atom; and m represents an integer from 1 to 3].
摘要翻译：提供倍半硅氧烷树脂，正性抗蚀剂组合物，抗蚀剂层压体以及能够抑制脱气现象的形成抗蚀剂图案的方法，以及理想地形成抗蚀剂图案的含硅抗蚀剂组合物和方法也提供了适用于浸没式光刻技术。倍半硅氧烷树脂包括由下述通式表示的结构单元[其中，R 1和R 2各自独立地表示直链，支链或环状的饱和脂族烃基; R3表示含有脂肪族单环或多环基团的含有烃基的酸解离性溶解抑制基团， R4表示氢原子，或直链，支链或环状烷基; X表示1〜8个碳原子的烷基，其中至少一个氢原子被氟原子取代; m表示1〜3的整数]。

6. 发明申请

US20060222866A1 Silsesquioxane resin, positive resist composition,layered product including resist and method of forming resist pattern 审中-公开
标题翻译：倍半硅氧烷树脂，正性抗蚀剂组合物，包括抗蚀剂的层叠体和形成抗蚀剂图案的方法
公开(公告)号：US20060222866A1
公开(公告)日：2006-10-05
申请号：US10546575
申请日：2004-02-25
申请人： Tsuyoshi Nakamura , Koki Tamura , Tomotaka Yamada , Taku Hirayama , Daisuke Kawana , Takayuki Hosono
发明人： Tsuyoshi Nakamura , Koki Tamura , Tomotaka Yamada , Taku Hirayama , Daisuke Kawana , Takayuki Hosono
IPC分类号： B32B27/00 , C08L83/04 , C08G77/04 , B32B9/04
CPC分类号： C08G77/04 , C08G77/24 , G03F7/0392 , G03F7/0757 , Y10T428/31663
摘要： A silsesquioxane resin, a positive resist composition, a resist laminate, and a method of forming a resist pattern that are capable of suppressing a degas phenomenon are provided, and a silicon-containing resist composition and a method of forming a resist pattern that are ideally suited to immersion lithography are also provided. The silsesquioxane resin includes structural units represented by the general shown below [wherein, R1 and R2 each represent, independently, a straight chain, branched, or cyclic saturated aliphatic hydrocarbon group; R3 represents an acid dissociable, dissolution inhibiting group containing a hydrocarbon group that includes an aliphatic monocyclic or polycyclic group; R4 represents a hydrogen atom, or a straight chain, branched, or cyclic alkyl group; X represents an alkyl group of 1 to 8 carbon atoms in which at least one hydrogen atom has been substituted with a fluorine atom; and m represents an integer from 1 to 3].
摘要翻译：提供倍半硅氧烷树脂，正性抗蚀剂组合物，抗蚀剂层压体以及能够抑制脱气现象的形成抗蚀剂图案的方法，以及理想地形成抗蚀剂图案的含硅抗蚀剂组合物和方法也提供了适用于浸没式光刻技术。倍半硅氧烷树脂包括由下列通式表示的结构单元[其中，R 1和R 2各自独立地表示直链，支链或环状的饱和脂族烃组; R 3表示含有脂肪族单环或多环基团的含有烃基的酸解离性溶解抑制基团， R 4表示氢原子，或直链，支链或环状的烷基; X表示1〜8个碳原子的烷基，其中至少一个氢原子被氟原子取代; m表示1〜3的整数]。

7. 发明申请

US20070178394A1 RESIST COMPOSITION 有权
标题翻译：耐腐蚀组合物
公开(公告)号：US20070178394A1
公开(公告)日：2007-08-02
申请号：US11621896
申请日：2007-01-10
申请人： Taku Hirayama , Hideo Hada , Satoshi Fujimura , Takeshi Iwai , Mitsuru Sato , Ryoichi Takasu , Toshikazu Tachikawa , Jun Iwashita , Keita Ishiduka , Tomotaka Yamada , Toshikazu Takayama , Masaaki Yoshida
发明人： Taku Hirayama , Hideo Hada , Satoshi Fujimura , Takeshi Iwai , Mitsuru Sato , Ryoichi Takasu , Toshikazu Tachikawa , Jun Iwashita , Keita Ishiduka , Tomotaka Yamada , Toshikazu Takayama , Masaaki Yoshida
IPC分类号： G03C5/00
CPC分类号： G03F7/70616 , G03F7/0382 , G03F7/0397 , G03F7/70341 , Y10S430/106 , Y10S430/111
摘要： A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.
摘要翻译：提供了相对于在浸没式光刻工艺中使用的溶剂是稳定的并且显示出优异的灵敏度和抗蚀剂图案轮廓的抗蚀剂组合物，以及形成使用这种抗蚀剂组合物的抗蚀剂图案的方法。抗蚀剂组合物是根据预定参数，或是包含含有酸解离的溶解抑制基团并在酸的作用下显示增加的碱溶性的树脂组分（A）的阳性抗蚀剂组合物，酸产生剂组分（B）和有机溶剂（C），其中，成分（A）含有来自含有酸解离性，溶解抑制基团但不含结构单元（a0）的（甲基）丙烯酸酯的结构单元（a1）含有二羧酸的酸酐的单元（a0-1）和含有酚羟基的结构单元（a0-2）。

8. 发明申请

US20090130605A1 RESIST COMPOSITION 有权
标题翻译：耐腐蚀组合物
公开(公告)号：US20090130605A1
公开(公告)日：2009-05-21
申请号：US12252319
申请日：2008-10-15
申请人： Taku Hirayama , Hideo Hada , Satoshi Fujimura , Takeshi Iwai , Mitsuru Sato , Ryoichi Takasu , Toshikazu Tachikawa , Jun Iwashita , Keita Ishiduka , Tomotaka Yamada , Toshikazu Takayama , Masaaki Yoshida
发明人： Taku Hirayama , Hideo Hada , Satoshi Fujimura , Takeshi Iwai , Mitsuru Sato , Ryoichi Takasu , Toshikazu Tachikawa , Jun Iwashita , Keita Ishiduka , Tomotaka Yamada , Toshikazu Takayama , Masaaki Yoshida
IPC分类号： G03F7/20
CPC分类号： G03F7/70616 , G03F7/0382 , G03F7/0397 , G03F7/70341 , Y10S430/106 , Y10S430/111
摘要： A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.
摘要翻译：提供了相对于在浸没式光刻工艺中使用的溶剂是稳定的并且显示出优异的灵敏度和抗蚀剂图案轮廓的抗蚀剂组合物，以及形成使用这种抗蚀剂组合物的抗蚀剂图案的方法。抗蚀剂组合物是根据预定参数，或是包含含有酸解离的溶解抑制基团并在酸的作用下显示增加的碱溶性的树脂组分（A）的阳性抗蚀剂组合物，酸产生剂组分（B）和有机溶剂（C），其中，成分（A）含有来自含有酸解离性，溶解抑制基团但不含结构单元（a0）的（甲基）丙烯酸酯的结构单元（a1）含有二羧酸的酸酐的单元（a0-1）和含有酚羟基的结构单元（a0-2）。

9. 发明授权

US07527909B2 Resist composition 有权
公开(公告)号：US07527909B2
公开(公告)日：2009-05-05
申请号：US11621896
申请日：2007-01-10
申请人： Taku Hirayama , Hideo Hada , Satoshi Fujimura , Takeshi Iwai , Mitsuru Sato , Ryoichi Takasu , Toshikazu Tachikawa , Jun Iwashita , Keita Ishiduka , Tomotaka Yamada , Toshikazu Takayama , Masaaki Yoshida
发明人： Taku Hirayama , Hideo Hada , Satoshi Fujimura , Takeshi Iwai , Mitsuru Sato , Ryoichi Takasu , Toshikazu Tachikawa , Jun Iwashita , Keita Ishiduka , Tomotaka Yamada , Toshikazu Takayama , Masaaki Yoshida
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/70616 , G03F7/0382 , G03F7/0397 , G03F7/70341 , Y10S430/106 , Y10S430/111
摘要： A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.

10. 发明授权

US07501220B2 Resist composition 有权
标题翻译：抗蚀组成
公开(公告)号：US07501220B2
公开(公告)日：2009-03-10
申请号：US10845620
申请日：2004-05-13
申请人： Taku Hirayama , Hideo Hada , Satoshi Fujimura , Takeshi Iwai , Mitsuru Sato , Ryoichi Takasu , Toshikazu Tachikawa , Jun Iwashita , Keita Ishiduka , Tomotaka Yamada , Toshikazu Takayama , Masaaki Yoshida
发明人： Taku Hirayama , Hideo Hada , Satoshi Fujimura , Takeshi Iwai , Mitsuru Sato , Ryoichi Takasu , Toshikazu Tachikawa , Jun Iwashita , Keita Ishiduka , Tomotaka Yamada , Toshikazu Takayama , Masaaki Yoshida
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/70616 , G03F7/0382 , G03F7/0397 , G03F7/70341 , Y10S430/106 , Y10S430/111
摘要： A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.
摘要翻译：提供了相对于在浸没式光刻工艺中使用的溶剂是稳定的并且显示出优异的灵敏度和抗蚀剂图案轮廓的抗蚀剂组合物，以及形成使用这种抗蚀剂组合物的抗蚀剂图案的方法。抗蚀剂组合物是根据预定参数，或是包含含有酸解离的溶解抑制基团并在酸的作用下显示增加的碱溶性的树脂组分（A）的阳性抗蚀剂组合物，酸产生剂组分（B）和有机溶剂（C），其中，成分（A）含有来自含有酸解离性，溶解抑制基团但不含结构单元（a0）的（甲基）丙烯酸酯的结构单元（a1）含有二羧酸的酸酐的单元（a0-1）和含有酚羟基的结构单元（a0-2）。

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