专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07728429B2 Semiconductor device having recessed connector portions 有权
标题翻译：具有凹入连接器部分的半导体器件
公开(公告)号：US07728429B2
公开(公告)日：2010-06-01
申请号：US11826673
申请日：2007-07-17
申请人： Isamu Aokura , Toshiyuki Fukuda , Yukitoshi Ota , Keiji Miki
发明人： Isamu Aokura , Toshiyuki Fukuda , Yukitoshi Ota , Keiji Miki
IPC分类号： H01L23/495
CPC分类号： H01L24/81 , H01L23/13 , H01L23/49816 , H01L23/5386 , H01L24/16 , H01L25/0655 , H01L2224/05001 , H01L2224/05022 , H01L2224/05124 , H01L2224/05572 , H01L2224/056 , H01L2224/10175 , H01L2224/13099 , H01L2224/16 , H01L2224/16225 , H01L2224/26175 , H01L2224/32225 , H01L2224/45124 , H01L2224/48465 , H01L2224/49171 , H01L2224/8121 , H01L2224/81815 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01072 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/10253 , H01L2924/14 , H01L2924/15192 , H01L2924/15311 , H01L2924/1532 , H01L2924/157 , H01L2924/19107 , H01L2924/351 , H01L2924/00
摘要： A semiconductor device in accordance with the present invention includes IC chips (semiconductor elements) (2, 3, 4) having solder bumps (24) (projecting electrodes) formed on electrode pads, and a first wiring board (1) having connection terminals (7) to which the respective solder bumps (24) of the IC chips (2, 3, 4) are connected, external connection terminals (8) for connection to an external apparatus, and conductor wires (9) provided in respective groove portions formed in a board surface and connected to the respective connection terminals (7). In spite of the reduced pitch of the conductor wires (9), the presence of the groove portions enables an increase in cross section, allowing a reduction in wiring resistance.
摘要翻译：根据本发明的半导体器件包括在电极焊盘上形成有焊料凸点（24）（突出电极）的IC芯片（半导体元件）（2,3,4）和具有连接端子的第一布线板（1） 7），IC芯片（2,3,4）的各个焊料凸块（24）连接到其上，用于连接到外部设备的外部连接端子（8）和形成在各个槽部分中的导线（9）在板表面上并连接到相应的连接端子（7）。尽管导体线（9）的间距减小，但是沟槽部分的存在使得横截面增加，从而允许降低布线电阻。

2. 发明申请

US20050036057A1 Image pickup device integrated with lens, method and apparatus for manufacturing the same 审中-公开
标题翻译：与其制造的镜头，方法和装置集成的图像拾取装置
公开(公告)号：US20050036057A1
公开(公告)日：2005-02-17
申请号：US10898522
申请日：2004-07-23
申请人： Kazuya Ushirokawa , Isamu Aokura , Koujirou Nakamura , Hidenobu Nishikawa , Tomonori Itoh
发明人： Kazuya Ushirokawa , Isamu Aokura , Koujirou Nakamura , Hidenobu Nishikawa , Tomonori Itoh
IPC分类号： H04N5/225
CPC分类号： H04N5/2254
摘要： The present invention of a manufacturing method and a apparatus for manufacturing an image pickup device integrated with lens in which a lens holding part having an optical lens is automatically adjusted with respect to a package on which an imaging chip is mounted so that an optical image from an optical axis adjusting pattern is formed on the image plane of the imaging chip and the lens holding part and the package are fixed to each other with an adhesive used therebetween as a position adjusting member at the adjusted position, and an image pickup device integrated with lens thus manufactured having excellent properties.
摘要翻译：本发明的一种制造方法和用于制造与透镜一体化的图像拾取装置的装置，其中具有光学透镜的透镜保持部分相对于其上安装有成像芯片的封装被自动调整，使得来自在成像芯片的图像平面上形成光轴调整图案，并且透镜保持部分和包装件之间用粘合剂彼此固定，作为调节位置处的位置调整部件，并且将图像拾取装置与由此制造的具有优异性能的透镜。

3. 发明申请

US20080099891A1 Semiconductor device and method of manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080099891A1
公开(公告)日：2008-05-01
申请号：US11898502
申请日：2007-09-12
申请人： Yutaka Kato , Hiroaki Suzuki , Naoto Ueda , Isamu Aokura , Takayuki Yoshida , Takuma Motofuji
发明人： Yutaka Kato , Hiroaki Suzuki , Naoto Ueda , Isamu Aokura , Takayuki Yoshida , Takuma Motofuji
IPC分类号： H01L23/495 , H01L21/00
CPC分类号： H01L23/3128 , H01L21/56 , H01L23/3677 , H01L23/4334 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/97 , H01L2224/32225 , H01L2224/32245 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2224/92247 , H01L2224/97 , H01L2924/00014 , H01L2924/15311 , H01L2924/16151 , H01L2924/16152 , H01L2924/16251 , H01L2924/181 , H01L2924/00012 , H01L2224/83 , H01L2224/85 , H01L2924/00 , H01L2224/05599
摘要： A semiconductor device including: a semiconductor element 1, a heat conductor 91 opposed to the main surface of the semiconductor element 1, and a sealing resin 6 for sealing at least a part of the semiconductor element 1 and a part of the heat conductor 91, the heat conductor 91 having a surface partially exposed from the sealing resin 6 to the outside, the surface being opposite to the other surface facing the main surface of the semiconductor element 1, wherein the semiconductor device further includes an opening 11 penetrating in the thickness direction on a part of the surface including an exposed part of the heat conductor 91. Since resin can be injected from the opening 11 facing the main surface of the semiconductor element 1, the quality can be stabilized.
摘要翻译：一种半导体器件，包括：半导体元件1，与半导体元件1的主表面相对的热导体91和用于密封半导体元件1的至少一部分和热导体91的一部分的密封树脂6，具有从密封树脂6部分地露出到外部的表面与面向半导体元件1的主表面的另一表面相对的表面的热导体91，其中半导体器件还包括沿厚度方向穿透的开口11 在包括热导体91的暴露部分的表面的一部分上。由于树脂可以从面向半导体元件1的主表面的开口11注入，所以可以使质量稳定。

4. 发明授权

US06342139B1 Sputtering system 失效
标题翻译：溅射系统
公开(公告)号：US06342139B1
公开(公告)日：2002-01-29
申请号：US09495293
申请日：2000-02-01
申请人： Isamu Aokura , Tomohiro Okumura , Naoki Suzuki
发明人： Isamu Aokura , Tomohiro Okumura , Naoki Suzuki
IPC分类号： C23C1435
CPC分类号： H01J37/321 , C23C14/358 , H01J37/3408
摘要： A sputtering system includes a vacuum chamber, a sputtering electrode provided in the vacuum chamber, a target supported on the sputtering electrode with a front surface of the target and a substrate disposed in the vacuum chamber so as to be opposed to each other. A high-frequency or DC power source supplies a high-frequency or DC power to the sputtering electrode to generate plasma on the target, and an antenna is provided for generating an electromagnetic wave and is disposed outside the vacuum chamber and near the target. An electromagnetic-wave inlet window for introducing into the vacuum chamber an electromagnetic wave generated from the antenna is provided in a wall of the vacuum chamber.
摘要翻译：溅射系统包括真空室，设置在真空室中的溅射电极，具有靶的前表面的溅射电极上支撑的靶和设置在真空室中的基板以彼此相对。高频或直流电源向溅射电极提供高频或直流电力，以在目标上产生等离子体，并且提供用于产生电磁波的天线，并设置在真空室外部和靶附近。在真空室的壁上设置有用于将从天线产生的电磁波引入真空室的电磁波入口窗口。

5. 发明授权

US5917682A Magnetic head and manufacturing method therefor 失效
标题翻译：磁头及其制造方法
公开(公告)号：US5917682A
公开(公告)日：1999-06-29
申请号：US925385
申请日：1997-09-08
申请人： Hitoshi Yamanishi , Isamu Aokura , Koichi Osano , Yasushi Inoue , Fumio Sakai
发明人： Hitoshi Yamanishi , Isamu Aokura , Koichi Osano , Yasushi Inoue , Fumio Sakai
IPC分类号： G11B5/187 , G11B5/31 , G11B5/40 , G11B5/23
CPC分类号： G11B5/1878 , G11B5/314 , G11B5/40 , Y10T428/115
摘要： A magnetic head includes a back core made of ferrite and a magnetic alloy film arranged in a vicinity of a magnetic gap and having an average composition expressed by TxMyNz wherein T is Fe or Co; M is at least one metal selected from a group consisting of Nb, Zr, Ta, Hf, Cr, W and Mo; N is nitrogen; and x, y and z are atomic percentages holding 65.ltoreq.x.ltoreq.94, 5.ltoreq.y.ltoreq.25, 0
摘要翻译：磁头包括由铁氧体制成的背芯和布置在磁隙附近的具有由TxMyNz表示的平均组成的磁性合金膜，其中T是Fe或Co; M是选自Nb，Zr，Ta，Hf，Cr，W和Mo中的至少一种金属; N是氮; 而x，y和z是保持65

6. 发明授权

US5600520A Laminated magnetic head core 失效
标题翻译：层压磁头芯
公开(公告)号：US5600520A
公开(公告)日：1997-02-04
申请号：US441947
申请日：1995-05-16
申请人： Isamu Aokura , Kumio Nago , Hitoshi Yamanishi , Hiroshi Sakakima , Youichi Ohnishi
发明人： Isamu Aokura , Kumio Nago , Hitoshi Yamanishi , Hiroshi Sakakima , Youichi Ohnishi
IPC分类号： G11B5/31 , G11B5/127 , G11B5/147 , H01F10/14
CPC分类号： G11B5/147 , G11B5/3116 , Y10S428/90 , Y10T428/1129 , Y10T428/24975 , Y10T428/265
摘要： In a laminated magnetic head core, Fe--M--N system soft magnetic thin films (M being at least one element selected from the group consisting of Ta, Nb, Zr, and Hf) and non-magnetic insulating films are alternately laminated. Each of the soft magnetic thin films is 0.2-10 .mu.m thick. Each of the non-magnetic insulating films is 10 through 1000 nm thick. One of the soft magnetic thin films shows high magnetic permeability in a different direction from that of an adjacent soft magnetic thin film via the non-magnetic insulating film within a film surface of the soft magnetic thin film.
摘要翻译：在层叠磁头芯中，交替层叠Fe-M-N系软磁薄膜（M为选自Ta，Nb，Zr和Hf中的至少一种元素）和非磁性绝缘膜。每个软磁薄膜的厚度为0.2-10μm。每个非磁性绝缘膜的厚度为10〜1000nm。一个软磁性薄膜通过软磁性薄膜的膜表面内的非磁性绝缘膜，在与相邻的软磁性薄膜的方向不同的方向上表现出高的磁导率。

7. 发明申请

US20100044880A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE 审中-公开
标题翻译：半导体器件和半导体器件
公开(公告)号：US20100044880A1
公开(公告)日：2010-02-25
申请号：US12428273
申请日：2009-04-22
申请人： Isamu AOKURA , Takashi YUI , Toshitaka AKAHOSHI
发明人： Isamu AOKURA , Takashi YUI , Toshitaka AKAHOSHI
IPC分类号： H01L23/48
CPC分类号： H05K1/0271 , H01L23/13 , H01L23/498 , H01L23/49822 , H01L23/49827 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/09701 , H01L2924/15311 , H01L2924/15331 , H01L2924/3511 , H05K1/141 , H05K3/3436 , H05K2201/09036 , H01L2924/00012 , H01L2924/00
摘要： A semiconductor device includes a multilayer wiring substrate having a plurality of inner wiring layers and a semiconductor chip mounted on the multilayer wiring substrate. The multilayer wiring substrate has a groove formed in the bottom surface. The groove does not reach the lowermost of the inner wiring layers.
摘要翻译：半导体器件包括具有多个内部布线层的多层布线基板和安装在多层布线基板上的半导体芯片。多层布线基板在底面形成有槽。凹槽不到达内部布线层的最下部。

8. 发明申请

US20070193682A1 Bonding method and apparatus 失效
标题翻译：粘合方法和装置
公开(公告)号：US20070193682A1
公开(公告)日：2007-08-23
申请号：US10599638
申请日：2005-04-06
申请人： Tatsuo Sasaoka , Satoshi Horie , Isamu Aokura , Yoshihiko Yagi , Kazuki Fukada
发明人： Tatsuo Sasaoka , Satoshi Horie , Isamu Aokura , Yoshihiko Yagi , Kazuki Fukada
IPC分类号： B32B38/16 , B32B38/10 , B32B38/00 , B31F1/07
CPC分类号： B23K1/203 , B23K2101/40 , H01L21/4864 , H01L21/6835 , H01L23/3142 , H01L24/75 , H01L24/81 , H01L2224/05568 , H01L2224/05573 , H01L2224/11003 , H01L2224/1134 , H01L2224/1181 , H01L2224/1184 , H01L2224/13019 , H01L2224/13144 , H01L2224/749 , H01L2224/75 , H01L2224/75301 , H01L2224/75753 , H01L2224/81009 , H01L2224/81011 , H01L2224/81012 , H01L2224/81013 , H01L2224/81191 , H01L2224/81395 , H01L2224/81801 , H01L2224/8182 , H01L2224/81894 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01021 , H01L2924/01025 , H01L2924/01033 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H05K3/328 , H05K3/3489 , H05K3/383 , H05K2201/0373 , H05K2201/10674 , H05K2203/0307 , Y10S438/974 , Y10T156/1023 , Y10T156/14 , H01L2224/05599
摘要： A bonding method and an apparatus that enable metal bonding under the atmospheric pressure and at room temperature, wherein the surfaces of objects (1b, 2a) to be bonded together are cleaned in an initial cleaning step (S1) to remove bonding inhibitor substances (G) such as oxides and adhered substances; one (1b) of the bonding surfaces is provided with an uneven profile with a predetermined roughness in a surface roughness control step (S3); a surface treatment step (S5) is performed to remove the substances (F) that have been removed but adhered to the bonding surfaces (1b, 2a) again; and the uneven bonding surface (1b) is pressed against the other bonding surface (2a) to bond them together.
摘要翻译：在大气压和室温下能够进行金属接合的接合方法和装置，其中在初始清洁步骤（S1）中清洁要结合在一起的物体（1b，2a）的表面以除去结合抑制剂物质（G），如氧化物和附着物质; 一个（1b）的粘合表面在表面粗糙度控制步骤（S 3）中设置有具有预定粗糙度的凹凸轮廓; 执行表面处理步骤（S 5）以除去已经去除但又粘附到接合表面（1b，2a）上的物质（F）并且不平坦的接合表面（1b）被压靠在另一个接合表面（2a）上以将它们结合在一起。

9. 发明授权

US06217714B1 Sputtering apparatus 失效
标题翻译：溅射装置
公开(公告)号：US06217714B1
公开(公告)日：2001-04-17
申请号：US08672660
申请日：1996-06-28
申请人： Munekazu Nishihara , Teiichi Kimura , Isamu Aokura
发明人： Munekazu Nishihara , Teiichi Kimura , Isamu Aokura
IPC分类号： C23C1434
CPC分类号： C23C14/352 , H01J37/3408
摘要： In a sputtering apparatus, in a vacuum chamber having a gas supply and a gas discharge functions, a substrate is set to a supporting part therefor and a target is disposed at an electrode connected with a power source within a plane opposite to the substrate, so as to form a film while holding the substrate in a fixed state to the target. The electrode is divided into three or more electrode parts, the target is divided and disposed on the three or more electrode parts within the plane, and a magnet is arranged for each divided target at a position where a line of magnetic force on a surface of the each target is generated by each magnet.
摘要翻译：在溅射装置中，在具有气体供给和气体放电功能的真空室中，将基板设定为支撑部，并且在与基板相反的平面内的与电源连接的电极上设置靶，因此以便在将固定状态的基板保持在目标上的同时形成膜。电极被分为三个或更多个电极部分，目标被分割并设置在平面内的三个或更多个电极部分上，并且在每个分割的靶上布置磁体，每个目标由每个磁体产生。

10. 发明授权

US06176980B1 Sputtering method and apparatus 失效
标题翻译：溅射方法和装置
公开(公告)号：US06176980B1
公开(公告)日：2001-01-23
申请号：US09471509
申请日：1999-12-23
申请人： Isamu Aokura , Teiichi Kimura , Hiroshi Hayata , Masahiro Yamamoto , Nobuyuki Mori
发明人： Isamu Aokura , Teiichi Kimura , Hiroshi Hayata , Masahiro Yamamoto , Nobuyuki Mori
IPC分类号： C23C1434
CPC分类号： C23C14/3492 , C23C14/34 , H01J37/32449 , H01J37/32834
摘要： The film thickness of a thin film formed on substrate 14 is made symmetrical and uniform by eliminating currents of gas over target 9 by performing film deposition in a condition with gas supply and vacuum evacuation cut off, after adjusting the interior of vacuum chamber 1 to the predetermined pressure.
摘要翻译：通过在将气体供给和真空抽真空切断的状态下进行膜沉积，在将真空室1的内部调节到了真空室1之后，通过在目标9上除去气体的电流，使形成在基板14上的薄膜的膜厚度对称和均匀预定压力。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式