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1. 发明授权

US5600520A Laminated magnetic head core 失效
标题翻译：层压磁头芯
公开(公告)号：US5600520A
公开(公告)日：1997-02-04
申请号：US441947
申请日：1995-05-16
申请人： Isamu Aokura , Kumio Nago , Hitoshi Yamanishi , Hiroshi Sakakima , Youichi Ohnishi
发明人： Isamu Aokura , Kumio Nago , Hitoshi Yamanishi , Hiroshi Sakakima , Youichi Ohnishi
IPC分类号： G11B5/31 , G11B5/127 , G11B5/147 , H01F10/14
CPC分类号： G11B5/147 , G11B5/3116 , Y10S428/90 , Y10T428/1129 , Y10T428/24975 , Y10T428/265
摘要： In a laminated magnetic head core, Fe--M--N system soft magnetic thin films (M being at least one element selected from the group consisting of Ta, Nb, Zr, and Hf) and non-magnetic insulating films are alternately laminated. Each of the soft magnetic thin films is 0.2-10 .mu.m thick. Each of the non-magnetic insulating films is 10 through 1000 nm thick. One of the soft magnetic thin films shows high magnetic permeability in a different direction from that of an adjacent soft magnetic thin film via the non-magnetic insulating film within a film surface of the soft magnetic thin film.
摘要翻译：在层叠磁头芯中，交替层叠Fe-M-N系软磁薄膜（M为选自Ta，Nb，Zr和Hf中的至少一种元素）和非磁性绝缘膜。每个软磁薄膜的厚度为0.2-10μm。每个非磁性绝缘膜的厚度为10〜1000nm。一个软磁性薄膜通过软磁性薄膜的膜表面内的非磁性绝缘膜，在与相邻的软磁性薄膜的方向不同的方向上表现出高的磁导率。

2. 发明授权

US5403457A Method for making soft magnetic film 失效
标题翻译：制造软磁膜的方法
公开(公告)号：US5403457A
公开(公告)日：1995-04-04
申请号：US111055
申请日：1993-08-24
申请人： Kumio Nago , Isamu Aokura , Hitoshi Yamanishi , Koichi Osano , Hiroshi Sakakima , Toshiyuki Suemitsu
发明人： Kumio Nago , Isamu Aokura , Hitoshi Yamanishi , Koichi Osano , Hiroshi Sakakima , Toshiyuki Suemitsu
IPC分类号： G11B5/147 , H01F41/18 , H01F41/30 , C23C14/35 , G11B5/127
CPC分类号： B82Y25/00 , B82Y40/00 , G11B5/147 , H01F41/18 , H01F41/302 , Y10T29/49034
摘要： The method of the invention provides a soft magnetic film having a high saturation magnetic flux density and an anisotropy of high magnetic permeability suitable for use in various types of magnetic heads at a high production yield by use of a sputtering apparatus provided with a sputtering electrode, which has permanent magnets arranged above a target 1 mainly of Fe or Co in such a way that lines of magnetic force 3 generated by said permanent magnets are in parallel to the surface of said target 1 and to the center line of said target 1 and have a magnetic strength pattern symmetric with respect to said center line while the lines of magnetic force to the right of said center line are of a reverse direction to those to the left of said center line.
摘要翻译：本发明的方法通过使用具有溅射电极的溅射装置，提供了一种具有高饱和磁通密度和高磁导率的各向异性的软磁性膜，其适用于各种类型的磁头，以高产率生产，其具有主要以Fe或Co布置在目标1上方的永磁体，使得由所述永磁体产生的磁力线3平行于所述目标1的表面和所述目标1的中心线并且具有相对于所述中心线对称的磁强度图案，而所述中心线右侧的磁力线与所述中心线左侧的磁力线相反。

3. 发明授权

US5429731A Method for forming a soft magnetic nitride layer on a magnetic head 失效
标题翻译：在磁头上形成软磁性氮化物层的方法
公开(公告)号：US5429731A
公开(公告)日：1995-07-04
申请号：US86364
申请日：1993-07-06
申请人： Koichi Osano , Hiroshi Sakakima , Keita Ihara , Mitsuo Satomi , Kumio Nago , Youichi Ohnishi , Kunio Tanaka , Hitoshi Yamanishi
发明人： Koichi Osano , Hiroshi Sakakima , Keita Ihara , Mitsuo Satomi , Kumio Nago , Youichi Ohnishi , Kunio Tanaka , Hitoshi Yamanishi
IPC分类号： G11B5/31 , C23C14/00 , C23C14/34 , H01F10/13 , H01F10/14 , H01F41/18
CPC分类号： C23C14/0036 , C23C14/3414 , H01F10/13 , H01F10/265
摘要： The present invention relates to a method for forming a layer of isotropic soft magnetic nitride alloy even by means of mass-production apparatus wherein a target size is large in comparison to a distance between a substrate and a target, by using a bias sputtering method wherein a negative bias voltage is continuously applied to a substrate and sputtering is carried out in Ar atmosphere mixed with nitrogen gas or periodically mixed with nitrogen gas. Furthermore, the present invention may include a heat treatment of the soft magnetic nitride alloy layer deposited on the substrate in a temperature of more than 300.degree..degree.C. to less than 800.degree. C. to improve a soft magnetic characteristic.
摘要翻译：本发明涉及通过使用偏置溅射法，即使通过使用偏置溅射方法，通过大量生产设备形成各向同性软磁性氮化物合金层的方法，其中靶材尺寸比基板和靶材之间的距离大向基板连续施加负偏压，在与氮气混合的Ar气氛中进行溅射或与氮气周期性地混合。此外，本发明可以包括在大于300℃至小于800℃的温度下沉积在基板上的软磁性氮化物合金层的热处理以改善软磁特性。

4. 发明授权

US06982854B2 Magnetoresistance effect device and magnetoresistance effect head comprising the same, and magnetic recording/reproducing apparatus 失效
标题翻译：磁电阻效应器件和包括该磁阻效应器件的磁阻效应器头以及磁记录/再现设备
公开(公告)号：US06982854B2
公开(公告)日：2006-01-03
申请号：US10312006
申请日：2001-06-21
申请人： Yasuhiro Kawawake , Yasunari Sugita , Hiroshi Sakakima
发明人： Yasuhiro Kawawake , Yasunari Sugita , Hiroshi Sakakima
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , H01F10/324 , H01F10/3268 , H01F10/3272 , H01L43/08
摘要： In the present invention, a thin film whose main component is a metal having a specific resistance of 4 μΩ·cm to 200 μΩ·cm is used as a nonmagnetic layer of a so-called CPP-GMR element. Therefore, even when an area of the element becomes limited, the element is not increased excessively in resistance. Thus, even when a magnetic gap is narrow, a large output can be obtained.
摘要翻译：在本发明中，作为所谓的CPP-GMR元件的非磁性层，使用主成分为4μΩ·cm〜200μΩ·cm的电阻率的金属的薄膜。因此，即使元件的面积受到限制，元件的电阻也不会过大。因此，即使当磁隙窄时，也可以获得大的输出。

5. 发明授权

US06590268B2 Magnetic control device, and magnetic component and memory apparatus using the same 失效
标题翻译：磁控装置及使用其的磁性部件及存储装置
公开(公告)号：US06590268B2
公开(公告)日：2003-07-08
申请号：US09803571
申请日：2001-03-09
申请人： Hideaki Adachi , Akihiro Odagawa , Masayoshi Hiramoto , Nozomu Matsukawa , Hiroshi Sakakima
发明人： Hideaki Adachi , Akihiro Odagawa , Masayoshi Hiramoto , Nozomu Matsukawa , Hiroshi Sakakima
IPC分类号： H01L4300
CPC分类号： G11C11/16
摘要： A magnetic control device including an antiferromagnetic layer, a magnetic layer placed in contact with one side of the antiferromagnetic layer, and an electrode placed in contact with another side of the antiferromagnetic layer, wherein the direction of the magnetization of the magnetic layer is controlled by voltage applied between the magnetic layer and the electrode. In particular, when an additional magnetic layer is further laminated on the magnetic layer placed in contact with the antiferromagnetic layer via a non-magnetic layer, the direction of the magnetization of the controlled magnetic layer can be detected as a change in the electric resistance. Since such a magnetic control device, in principle, responds to the electric field or magnetic field, it forms a magnetic component capable of detecting an electric signal or a magnetic signal. In this case, the direction of the magnetization basically is maintained until the next signal is detected, so that such a device also can form an apparatus. Thus, a magnetic control device capable of controlling the magnetization with voltage and magnetic component and a memory apparatus using the same are provided.
摘要翻译：一种磁控制装置，包括反铁磁层，与反铁磁层的一侧接触的磁性层和与反铁磁性层的另一侧接触的电极，其中磁性层的磁化方向由施加在磁性层和电极之间的电压。特别地，当通过非磁性层进一步层叠在与反铁磁性层接触的磁性层上的附加磁性层时，可以检测受控磁性层的磁化方向作为电阻的变化。由于这种磁性控制装置原则上对电场或磁场进行响应，所以形成能够检测电信号或磁信号的磁性部件。在这种情况下，磁化的方向基本上被维持直到检测到下一个信号，使得这样的装置也可以形成装置。因此，提供了能够利用电压和磁性成分来控制磁化的磁控制装置和使用其的存储装置。

6. 发明授权

US06567246B1 Magnetoresistance effect element and method for producing the same, and magnetoresistance effect type head, magnetic recording apparatus, and magnetoresistance effect memory element 失效
标题翻译：磁阻效应元件及其制造方法，磁阻效应型磁头，磁记录装置和磁阻效应存储元件
公开(公告)号：US06567246B1
公开(公告)日：2003-05-20
申请号：US09516552
申请日：2000-03-01
申请人： Hiroshi Sakakima , Yasunari Sugita , Mitsuo Satomi , Yasuhiro Kawawake , Masayoshi Hiramoto , Nozomu Matsukawa
发明人： Hiroshi Sakakima , Yasunari Sugita , Mitsuo Satomi , Yasuhiro Kawawake , Masayoshi Hiramoto , Nozomu Matsukawa
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/00 , G11B5/012 , G11B5/3903 , G11B5/3925 , G11B2005/3996 , H01F10/3268 , H01F41/18 , H01F41/302 , H01L43/08
摘要： A magnetoresistance effect element includes a free layer, in which a magnetization direction thereof is easily rotated in response to an external magnetic field, a first non-magnetic layer, and a first pinned layer provided on a side opposite to the free layer of the first non-magnetic layer, in which a magnetization direction of the first pinned layer is not easily rotated in response to the external magnetic field. At least one of the first pinned layer and the free layer includes a first metal magnetic film contacting the first non-magnetic layer, and a first oxide magnetic film.
摘要翻译：磁阻效应元件包括自由层，其中其磁化方向响应于外部磁场容易旋转，第一非磁性层和设置在与第一非磁性层的自由层相对的一侧上的第一被钉扎层非磁性层，其中第一被钉扎层的磁化方向响应于外部磁场而不容易旋转。第一被钉扎层和自由层中的至少一个包括与第一非磁性层接触的第一金属磁性膜和第一氧化物磁性膜。

7. 发明授权

US06433958B1 Magnetic head, method for producing the same, video recording and reproduction apparatus including the magnetic head, and video camera including the magnetic head 失效
公开(公告)号：US06433958B1
公开(公告)日：2002-08-13
申请号：US09625687
申请日：2000-07-26
申请人： Nozomu Matsukawa , Masayoshi Hiramoto , Hiroshi Sakakima , Koichi Osano , Eisuke Sawai
发明人： Nozomu Matsukawa , Masayoshi Hiramoto , Hiroshi Sakakima , Koichi Osano , Eisuke Sawai
IPC分类号： G11B5235
CPC分类号： G11B5/1276 , G11B5/0086 , G11B5/1878 , G11B5/40 , G11B31/006 , Y10T29/49021 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49055
摘要： A magnetic head includes a pair of magnetic core halves; and a nonmagnetic layer provided between the pair of magnetic core halves for combining the pair of magnetic core halves. The pair of magnetic core halves each includes an oxide magnetic base, at least one underlying layer provided on the oxide magnetic base, and a metal magnetic thin film provided between the underlying film and the nonmagnetic layer. The metal magnetic thin film includes a magnetic film containing, as a major material, magnetic crystalline particles having an average volume Va and an average surface area Sa fulfilling the relationship of Sa>about 4.84 Va⅔. At least one of the pair of magnetic core halves has a winding window therein. The metal magnetic thin film is provided in such a manner as to prevent the oxide magnetic base from cracking due to an internal stress generated in the metal magnetic thin film.

8. 发明授权

US06400537B2 Thin film magnetic head 失效
标题翻译：薄膜磁头
公开(公告)号：US06400537B2
公开(公告)日：2002-06-04
申请号：US09099683
申请日：1998-06-18
申请人： Hiroshi Sakakima , Yousuke Irie , Yasuhiro Kawawake , Mitsuo Satomi
发明人： Hiroshi Sakakima , Yousuke Irie , Yasuhiro Kawawake , Mitsuo Satomi
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996
摘要： A thin film magnetic head includes an upper shield section, a lower shield section and a magnetoresistance device section between the upper shield section and the lower shield section. The magnetoresistance device section is connected to the upper shield section and the lower shield section through conductive layers. Current flows through the magnetoresistance device section via the upper shield and the lower shield.
摘要翻译：薄膜磁头包括在上屏蔽部分和下屏蔽部分之间的上屏蔽部分，下屏蔽部分和磁阻装置部分。磁阻器件部分通过导电层连接到上屏蔽部分和下屏蔽部分。电流经由上屏蔽和下屏蔽流过磁阻器件部分。

9. 发明授权

US06111782A Magnetoresistance effect device, and magnetoresistance effect type head, memory device, and amplifying device using the same 有权
标题翻译：磁电阻效应器件，磁阻效应型头，存储器件和使用其的放大器件
公开(公告)号：US06111782A
公开(公告)日：2000-08-29
申请号：US270647
申请日：1999-03-16
申请人： Hiroshi Sakakima , Yousuke Irie , Mitsuo Satomi , Yasuhiro Kawawake
发明人： Hiroshi Sakakima , Yousuke Irie , Mitsuo Satomi , Yasuhiro Kawawake
IPC分类号： G01R33/09 , G06K19/06 , G11B5/39 , G11C11/14 , G11C11/15 , G11C11/16 , G11C11/56 , H01F10/08 , H01F10/12 , H01F10/13 , H01F10/14 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08 , H01L43/10 , H03F7/02 , H03F15/00 , G11C11/00
CPC分类号： H03F7/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11C11/15 , G11C11/16 , G11C11/5607 , H01F10/3281 , H01L27/222 , H01L43/10 , G11B2005/3996 , G11B5/3925 , G11C2211/5616
摘要： A magnetoresistance effect device of the invention includes: a substrate; and a multilayer structure formed on the substrate. The multilayer structure includes a hard magnetic film, a soft magnetic film, and a non-magnetic metal film for separating the hard magnetic film from the soft magnetic film. The magnetization curve of the hard magnetic film has a good square feature, and the direction of a magnetization easy axis of the hard magnetic film substantially agrees to the direction of a magnetic field to be detected.
摘要翻译：本发明的磁阻效应器件包括：衬底; 以及形成在基板上的多层结构。多层结构包括硬磁膜，软磁膜和用于从硬磁膜分离硬磁膜的非磁性金属膜。硬磁性膜的磁化曲线具有良好的正方形特征，硬磁性膜的磁化容易轴的方向基本上与要检测的磁场的方向一致。

10. 发明授权

US5909345A Magnetoresistive device and magnetoresistive head 失效
公开(公告)号：US5909345A
公开(公告)日：1999-06-01
申请号：US802711
申请日：1997-02-19
申请人： Yasuhiro Kawawake , Mitsuo Satomi , Hiroshi Sakakima
发明人： Yasuhiro Kawawake , Mitsuo Satomi , Hiroshi Sakakima
IPC分类号： G01R33/09 , G11B5/39 , H01F10/32 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/39 , G11B5/3903 , H01F10/3204 , H01F10/3268 , H01L43/08 , G11B2005/3996
摘要： A magnetoresistive device of the present invention includes: a soft magnetic layer; a hard magnetic layer; a non-magnetic layer formed between the soft magnetic layer and the hard magnetic layer; and an interface magnetic layer, provided at an interface between the soft magnetic layer and the non-magnetic layer, for enhancing magnetic scattering, wherein the soft magnetic layer includes an amorphous structure.

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