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1. 发明授权

US07018725B2 Magneto-resistance effect element magneto-resistance effect memory cell, MRAM, and method for performing information write to or read from the magneto-resistance effect memory cell 有权
公开(公告)号：US07018725B2
公开(公告)日：2006-03-28
申请号：US10034895
申请日：2001-12-28
申请人： Akihiro Odagawa , Hiroshi Sakakima , Masayoshi Hiramoto , Nozomu Matsukawa
发明人： Akihiro Odagawa , Hiroshi Sakakima , Masayoshi Hiramoto , Nozomu Matsukawa
IPC分类号： B32B5/66
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B2005/3996 , G11C11/16 , G11C11/5607 , G11C2211/5615 , G11C2211/5616 , H01F10/3204 , H01F10/3254 , H01F10/3268 , H01F10/3272 , H01L27/222 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/26 , Y10T428/265 , Y10T428/32
摘要： A magneto-resistive effect element includes a first ferromagnetic film; a second ferromagnetic film; and a first nonmagnetic film interposed between the first ferromagnetic film and the second ferromagnetic film. The first ferromagnetic film has a magnetization more easily rotatable than a magnetization of the second ferromagnetic film by an external magnetic field. The first ferromagnetic film has an effective magnetic thickness of about 2 nm or less.

2. 发明授权

US06798620B2 Magneto-resistive element, magnetic head, and magnetic recording and reproduction apparatus 失效
标题翻译：磁电元件，磁头和磁记录和再现装置
公开(公告)号：US06798620B2
公开(公告)日：2004-09-28
申请号：US10441794
申请日：2003-05-20
申请人： Masayoshi Hiramoto , Nozomu Matsukawa , Akihiro Odagawa , Hideaki Adachi , Kenji Iijima , Hiroshi Sakakima , Yasunari Sugita
发明人： Masayoshi Hiramoto , Nozomu Matsukawa , Akihiro Odagawa , Hideaki Adachi , Kenji Iijima , Hiroshi Sakakima , Yasunari Sugita
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , G11B5/3916 , G11B2005/3996 , H01F10/324 , H01F10/3268 , H01F10/3272 , H01F10/3295
摘要： A magnetic head including a magnetic substrate for operating as a first electrode, a multi-layer film formed on a portion of the surface of the magnetic substrate an inter-layer insulating layer provided to cover side surfaces of the multi-layer film, a flux guide formed on surfaces of the multi-layer film and inter-layer insulating layers, a non-magnetic conductive layer formed on a surface of the flux guide, and a second electrode formed on a surface of the non-magnetic conductive layer, in which the multi-layer film includes a first magnetic layer formed on a portion of the surface of the magnetic substrate and includes a fixed layer, and a second magnetic layer including a non-magnetic layer formed on a surface of the first magnetic layer and a free layer formed on a surface of the non-magnetic layer.
摘要翻译：一种磁头，包括用作第一电极的磁性基板，在该磁性基板的一部分表面上形成的层间绝缘层，覆盖多层膜的侧表面的多层膜，形成在多层膜和层间绝缘层的表面上的引导件，形成在引导件的表面上的非磁性导电层和形成在非磁性导电层的表面上的第二电极，其中多层膜包括形成在磁性基板的表面的一部分上并包括固定层的第一磁性层和包括形成在第一磁性层的表面上的非磁性层的第二磁性层，层形成在非磁性层的表面上。

3. 发明授权

US06785100B2 Magnetic head comprising a multilayer magnetoresistive device and a yoke for introducing magnetic flux from a medium to the magnetoresistive device 失效
标题翻译：磁头包括多层磁阻器件和用于将磁通从介质引入到磁阻器件的磁轭
公开(公告)号：US06785100B2
公开(公告)日：2004-08-31
申请号：US09829400
申请日：2001-04-09
申请人： Masayoshi Hiramoto , Nozomu Matsukawa , Akihiro Odagawa , Kenji Iijima , Hiroshi Sakakima
发明人： Masayoshi Hiramoto , Nozomu Matsukawa , Akihiro Odagawa , Kenji Iijima , Hiroshi Sakakima
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/11 , G11B5/3903 , G11B5/3909 , G11B5/3916 , G11B5/3925 , G11B5/398 , G11B5/40 , G11B2005/3996
摘要： The present invention provides a magnetic head having improved characteristics, using a magnetoresistive device in which current flows across the film plane such as a TMR device. In a first magnetic head of the present invention, when the area of a non-magnetic layer is defined as a device cross-section area, and the area of a yoke is defined as a yoke area, viewed along the direction perpendicular to the surface of the substrate over which the yoke and the magnetoresistive device are formed, then the device cross-section area is not less than 30% of the yoke area, so that a resistance increase of the device cross-section area is suppressed. In a second magnetic head of the present invention, a magnetoresistive device is formed on a substrate, and a yoke is provided above a non-magnetic layer constituting the device. In a third magnetic head of the present invention, the free layer of the magnetoresistive device includes at least two magnetic films and at least one non-magnetic film that are laminated alternately, and the thickness of the non-magnetic layer is not less than 2 nm and not more than 10 nm, and magnetostatic coupling is dominant. In a fourth magnetic head of the present invention, a magnetic gap is provided adjacent to the magnetoresistive device and the magnetic films are coupled antiferromagnetically.
摘要翻译：本发明提供一种具有改进特性的磁头，其使用磁阻装置，其中电流流过诸如TMR装置的膜平面。在本发明的第一磁头中，当非磁性层的面积被定义为器件横截面积，并且将磁轭的面积定义为磁轭面积时，沿垂直于表面的方向观察在形成磁轭和磁阻装置的基板上，器件截面积不小于磁轭面积的30％，从而可以抑制器件截面积的电阻增加。在本发明的第二磁头中，在基板上形成磁阻装置，在构成装置的非磁性层的上方设置磁轭。在本发明的第三磁头中，磁阻装置的自由层包括至少两个磁性膜和交替层叠的至少一个非磁性膜，非磁性层的厚度不小于2 nm，不大于10nm，静磁耦合为主。在本发明的第四磁头中，与磁阻装置相邻设置有磁隙，并且磁膜与反铁磁耦合。

4. 发明授权

US06767655B2 Magneto-resistive element 失效
标题翻译：磁阻元件
公开(公告)号：US06767655B2
公开(公告)日：2004-07-27
申请号：US09931113
申请日：2001-08-16
申请人： Masayoshi Hiramoto , Nozomu Matukawa , Akihiro Odagawa , Kenji Iijima , Hiroshi Sakakima
发明人： Masayoshi Hiramoto , Nozomu Matukawa , Akihiro Odagawa , Kenji Iijima , Hiroshi Sakakima
IPC分类号： G11B531
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , H01F10/3268 , H01F10/3272 , H01F41/302 , H01L27/228 , H01L43/12 , Y10T428/1107 , Y10T428/1121 , Y10T428/1129 , Y10T428/1143 , Y10T428/1193
摘要： The present invention provides a vertical current-type magneto-resistive element. The element includes an intermediate layer and a pair of magnetic layers sandwiching the intermediate layer, and at least one of a free magnetic layer and a pinned magnetic layer is a multilayer film including at least one non-magnetic layer and magnetic layers sandwiching the non-magnetic layer. The element area defined by the area of the intermediate layer through which current flows perpendicular to the film is not larger than 1000 &mgr;m2.
摘要翻译：本发明提供一种垂直电流型磁阻元件。该元件包括中间层和夹在中间层的一对磁性层，并且自由磁性层和钉扎磁性层中的至少一个是包括至少一个非磁性层的多层膜和夹持非磁性层的磁性层，磁性层。由电流垂直于膜流过的中间层的面积所限定的元件面积不大于1000μm2。

5. 发明授权

US06632520B1 Magnetic film 有权
公开(公告)号：US06632520B1
公开(公告)日：2003-10-14
申请号：US09387404
申请日：1999-09-02
申请人： Masayoshi Hiramoto , Nozomu Matsukawa , Hiroshi Sakakima
发明人： Masayoshi Hiramoto , Nozomu Matsukawa , Hiroshi Sakakima
IPC分类号： B32B1500
CPC分类号： B82Y25/00 , B32B15/01 , B32B15/011 , C22C38/001 , C22C38/02 , C22C38/06 , C22C38/12 , C22C38/14 , C22C38/18 , C22C45/02 , C23C14/0073 , C23C14/185 , G11B5/012 , G11B5/11 , G11B5/187 , G11B5/3109 , G11B5/3153 , G11B5/3903 , G11B5/3967 , H01F10/16 , H01F10/32 , Y10T428/1186 , Y10T428/12576 , Y10T428/12611 , Y10T428/265
摘要： Magnetic film comprising a substantially crystalline magnetic layer and an intermediate layer alternately formed in contact with each other, wherein the magnetic layer has composition (M1&agr;1X1&bgr;1)100−&dgr;1A1&dgr;1 (&agr;1, &bgr;1, and &dgr;1 represent % by atomic weight; M1 is at least one of Fe, Co, and Ni; X1 is at least one of Mg, Ca, Sr, Ba, Si, Ge, Sn, Al, Ga, and transition metals excluding M1; and A1 is at least one of O and N), wherein: 0.1≦&bgr;1≦12 &agr;1+&bgr;1=100 0

6. 发明授权

US06535362B2 Magnetoresistive device having a highly smooth metal reflective layer 失效
标题翻译：具有高度光滑的金属反射层的磁阻器件
公开(公告)号：US06535362B2
公开(公告)日：2003-03-18
申请号：US08979886
申请日：1997-11-26
申请人： Yasuhiro Kawawake , Hiroshi Sakakima , Mitsuo Satomi
发明人： Yasuhiro Kawawake , Hiroshi Sakakima , Mitsuo Satomi
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3133 , G11B5/3903 , G11B5/3951 , G11B2005/3996 , H01F10/324 , H01F10/3268 , H01L43/08
摘要： The magnetoresistive device of the present invention includes: at least two magnetic layers stacked via a non-magnetic layer therebetween; and a metal reflective layer of conduction electrons formed so as to be in contact with at least one of outermost two layers of the magnetic layers. The metal reflective layer is in contact with one surface of the outermost magnetic layer which is opposite to the other surface of the outermost magnetic layer in contact with the non-magnetic layer. The metal reflective layer is likely to reflect conduction electrons while maintaining a spin direction of electrons.
摘要翻译：本发明的磁阻器件包括：通过其间的非磁性层堆积的至少两个磁性层; 以及形成为与最外两层磁性层中的至少一层接触的传导电子的金属反射层。金属反射层与最外面的磁性层的与非磁性层接触的最外面的磁性层的另一个表面相对的一个表面接触。金属反射层可能反射传导电子同时保持电子的自旋方向。

7. 发明授权

US06245450B1 Exchange coupling film magnetoresistance effect device magnetoresistance effective head and method for producing magnetoresistance effect device 有权
标题翻译：交换耦合膜磁阻效应器件磁阻有效磁头及其制造方法
公开(公告)号：US06245450B1
公开(公告)日：2001-06-12
申请号：US09236711
申请日：1999-01-25
申请人： Yasuhiro Kawawake , Hiroshi Sakakima , Mitsuo Satomi , Yasunari Sugita
发明人： Yasuhiro Kawawake , Hiroshi Sakakima , Mitsuo Satomi , Yasunari Sugita
IPC分类号： G11B566
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3919 , G11B5/3925 , G11B5/3932 , G11B5/3967 , G11B2005/3996 , H01F10/3218 , H01F10/3263 , H01F10/3268 , H01L43/10 , Y10S428/90 , Y10T428/1121
摘要： An exchange coupling film of the present invention includes a substrate and a multilayer film. The multilayer film includes: a ferromagnetic layer and a magnetization rotation suppressing layer provided adjacent to the ferromagnetic layer for suppressing a magnetization rotation of the ferromagnetic layer; and the magnetization rotation suppressing layer includes an Fe—M—O layer (where M=Al, Ti, Co, Mn, Cr, Ni or V).
摘要翻译：本发明的交换耦合膜包括基板和多层膜。多层膜包括：铁磁层和与铁磁层相邻设置的用于抑制铁磁层的磁化旋转的磁化抑制层; 磁化抑制层包括Fe-M-O层（其中M = Al，Ti，Co，Mn，Cr，Ni或V）。

8. 发明授权

US5358576A Amorphous materials with improved properties 失效
标题翻译：具有改善性能的无定形材料
公开(公告)号：US5358576A
公开(公告)日：1994-10-25
申请号：US157112
申请日：1980-06-06
申请人： Harufumi Senno , Hiroshi Sakakima , Masatsugu Yamaguchi , Eiichi Hirota
发明人： Harufumi Senno , Hiroshi Sakakima , Masatsugu Yamaguchi , Eiichi Hirota
IPC分类号： C22C45/04 , H01F1/153 , C22C19/07 , H01F1/047
CPC分类号： C22C45/04 , H01F1/15316
摘要： In amorphous materials including at least one iron-transition metal of Fe, Co, and Ni, and at least one metalloid of B, C, Si, and P, excellent magnetic characteristics can be provided subject to the condition that 0.5 to 10 atomic % of the above-described iron-transition metals are substituted by Mn. In addition, when the amorphous material partially substituted with Mn as described above is further comprised of at least one element selected from Groups IIIa, IVa, Va, and VIa in the periodic table, the crystallization temperature is considerably raised.
摘要翻译：在包含Fe，Co和Ni的至少一种铁过渡金属和至少一种B，C，Si和P的准金属的无定形材料中，可以提供优选的磁特性，条件是以0.5至10原子％的上述铁 - 过渡金属被Mn取代。此外，当如上所述被Mn部分取代的无定形材料进一步包含选自元素周期表中的IIIa，IVa，Va和VIa族中的至少一种元素时，结晶温度显着升高。

9. 发明授权

US5243316A Magnetoresistance effect element 失效
标题翻译：磁阻效应元素
公开(公告)号：US5243316A
公开(公告)日：1993-09-07
申请号：US824005
申请日：1992-01-22
申请人： Hiroshi Sakakima , Mitsuo Satomi , Toshio Takada , Teruya Shinjo
发明人： Hiroshi Sakakima , Mitsuo Satomi , Toshio Takada , Teruya Shinjo
IPC分类号： G01D5/14 , G01D5/16 , G01R33/09 , G11B5/39 , H01C10/00 , H01F10/00 , H01F10/08 , H01F10/32 , H01L43/10
CPC分类号： G01D5/142 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , H01F10/32 , H01F10/3281 , H01L43/10 , G11B2005/3996 , Y10S428/926 , Y10S428/928 , Y10T428/12465 , Y10T428/12931 , Y10T428/12944
摘要： There is provided a magnetoresistance effect element which is a multilayer structure body wherein a first magnetic film layer made of Ni-rich Ni-Co-Fe having a thickness of 10 to 100 .ANG. and a second magnetic film layer made of Co-rich Co-Ni-Fe having a thickness of 10 to 100 .ANG., which are different from each other in coercive force, are integrally laminated with a non-magnetic metal film layer having a thickness of 10 to 100 .ANG. interposed therebetween. The non-magnetic metal film layer is of a metal, for example, Cu, Ag, Au, Pt, Ru or Re. (Ni.sub.A Co.sub.1-A).sub.B Fe.sub.1-B, Ni.sub.A Fe.sub.1-A or Ni.sub.A Co.sub.1-A is used as a material of the first magnetic film, and (Co.sub.C Ni.sub.1-C).sub.D Fe.sub.1-D is used as a material of the second magnetic film.

10. 发明授权

US5034273A Nitrogen-containing magnetic alloy film 失效
标题翻译：含氮磁性合金膜
公开(公告)号：US5034273A
公开(公告)日：1991-07-23
申请号：US177766
申请日：1988-04-05
申请人： Hiroshi Sakakima , Koichi Osano , Yuji Omata
发明人： Hiroshi Sakakima , Koichi Osano , Yuji Omata
IPC分类号： C22C19/07 , C22C38/00 , G11B5/127 , H01F10/08 , H01F10/12 , H01F10/13 , H01F10/32
CPC分类号： B82Y25/00 , H01F10/13 , H01F10/132 , H01F10/32 , Y10S428/90 , Y10T428/1157 , Y10T428/12465 , Y10T428/12931
摘要： A nitrogen-containing magnetic alloy film composed of T-M-X amorphous alloy film and (T-M-X)N nitride film, and another film having a composition represented by (T-M-X)N and being compositionally modulated (In both cases T is at least one element selected from the group of Fe, Co, Ni and Mn, M is at least one element selected from the group of Ti, Zr, Hf, Nb, Ta, Cr, Mo, W, Re and Ru, X is at least one element selected from the group of B, Si, Ge and Al, and N is nitrogen.) show excellent characteristics for magnetic head cores such as soft magnetic property and wear resistance.

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