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1. 发明申请

US20130286395A1 Tool Induced Shift Reduction Determination for Overlay Metrology 有权
标题翻译：刀具诱导换位测量用于覆盖计量学
公开(公告)号：US20130286395A1
公开(公告)日：2013-10-31
申请号：US13457832
申请日：2012-04-27
申请人： Yung-Yao Lee , Ying Ying Wang , Heng-Hsin Liu , Heng-Jen Lee
发明人： Yung-Yao Lee , Ying Ying Wang , Heng-Hsin Liu , Heng-Jen Lee
IPC分类号： G01B11/00
CPC分类号： G01B11/00 , G03F7/70633
摘要： One embodiment relates to a method for semiconductor workpiece processing. In this method, a baseline tool induced shift (TIS) is measured by performing a baseline number of TIS measurements on a first semiconductor workpiece. After the baseline TIS has been determined, the method determines a subsequent TIS based on a subsequent number of TIS measurements taken on a first subsequent semiconductor workpiece. The subsequent number of TIS measurements is less than the baseline number of TIS measurements.
摘要翻译：一个实施例涉及一种用于半导体工件加工的方法。在该方法中，通过在第一半导体工件上执行TIS测量的基线数量来测量基线工具诱发位移（TIS）。在确定基线TIS之后，该方法基于在第一后续半导体工件上进行的随后的TIS测量数确定随后的TIS。随后的TIS测量数量小于TIS测量的基线数量。

2. 发明申请

US20130252175A1 Litho Cluster and Modulization to Enhance Productivity 有权
标题翻译： Litho集群和模块化以提高生产力
公开(公告)号：US20130252175A1
公开(公告)日：2013-09-26
申请号：US13429921
申请日：2012-03-26
申请人： I-Hsiung Huang , Heng-Hsin Liu , Heng-Jen Lee , Chin-Hsiang Lin
发明人： I-Hsiung Huang , Heng-Hsin Liu , Heng-Jen Lee , Chin-Hsiang Lin
IPC分类号： G03F7/20 , H01L21/00
CPC分类号： G03F7/30 , G03F7/16 , G03F7/70991 , H01L21/67225 , H01L21/67745
摘要： The present disclosure relates to a lithographic tool arrangement for semiconductor workpiece processing. The lithographic tool arrangement groups lithographic tools into clusters, and selectively transfers a semiconductor workpiece between a plurality of lithographic tools of a first type in a first cluster to a plurality of lithographic tools of a second type in a second cluster. The selective transfer is achieved though a transfer assembly, which is coupled to a defect scan tool that identifies defects generated in the lithographic tool of the first type. The disclosed lithographic tool arrangement also utilizes shared structural elements such as a housing assembly, and shared functional elements such as gases and chemicals. The lithographic tool arrangement may consist of baking, coating, exposure, and development units configured to provide a modularization of these various components in order to optimize throughput and efficiency for a given lithographic fabrication process.
摘要翻译：本公开涉及一种用于半导体工件加工的平版印刷工具装置。光刻工具装置将光刻工具组合成簇，并且将半导体工件在第一簇中的第一类型的多个光刻工具之间选择性地传输到第二簇中的第二类型的光刻工具。通过转移组件实现选择性转移，转移组件耦合到识别第一类型的光刻工具中产生的缺陷的缺陷扫描工具。所公开的平版印刷工具装置还利用共同的结构元件，例如壳体组件和诸如气体和化学品的共享功能元件。光刻工具装置可以包括被配置成提供这些各种部件的模块化的烘烤，涂覆，曝光和显影单元，以便为给定的光刻制造工艺优化产量和效率。

3. 发明授权

US08199314B2 System and method for improving immersion scanner overlay performance 有权
标题翻译：提高浸没式扫描仪覆盖性能的系统和方法
公开(公告)号：US08199314B2
公开(公告)日：2012-06-12
申请号：US13288133
申请日：2011-11-03
申请人： Jui-Chung Peng , Tzung-Chi Fu , Chin-Hsiang Lin , Chien-Hsun Lin , Chun-Hung Lin , Yao-Wen Guo , Shy-Jay Lin , Heng-Hsin Liu
发明人： Jui-Chung Peng , Tzung-Chi Fu , Chin-Hsiang Lin , Chien-Hsun Lin , Chun-Hung Lin , Yao-Wen Guo , Shy-Jay Lin , Heng-Hsin Liu
IPC分类号： G03B27/52 , G03B27/58 , G03B27/60 , G03B27/68 , G03B27/42 , G03B27/32
CPC分类号： G03F7/70875 , G03F7/70341 , G03F7/70783
摘要： System and method for improving immersion scanner overlay performance are described. One embodiment is a method of improving overlay performance of an photolithography immersion scanner including a wafer table having lens cooling water (“LCW”) disposed in a water channel therein, the wafer table having an input for receiving the LCW into the water channel and an output for expelling the LCW from the water channel. The method includes providing a water tank that connects to at least one of the wafer table input and the wafer table output; monitoring a pressure of water in the water tank; and maintaining the pressure of the water in the water tank at a predetermined level.
摘要翻译：描述了用于提高浸没式扫描仪覆盖性能的系统和方法。一个实施例是一种提高光刻浸没扫描仪的覆盖性能的方法，该扫描仪包括设置在其中的水通道中的具有透镜冷却水（“LCW”）的晶片台，晶片台具有用于将LCW接收到水通道中的输入端，输出用于从水道排出LCW。该方法包括：提供连接到晶片台输入和晶片台输出中的至少一个的水箱; 监测水箱内的水压; 并且将水箱中的水的压力保持在预定水平。

4. 发明申请

US20100285399A1 WAFER EDGE EXPOSURE UNIT 有权
标题翻译： WAFER EDGE曝光单元
公开(公告)号：US20100285399A1
公开(公告)日：2010-11-11
申请号：US12437776
申请日：2009-05-08
申请人： Po-Chang Huang , Heng-Hsin Liu , Heng-Jen Lee
发明人： Po-Chang Huang , Heng-Hsin Liu , Heng-Jen Lee
IPC分类号： G03F7/20 , G03B27/62
CPC分类号： G03B27/62 , G03F7/70425
摘要： A wafer edge exposure unit comprises a chuck for supporting a wafer. The chuck is rotatable about a central axis. A plurality of light sources are positioned or movably positionable with a common radial distance from the axis of the rotatable chuck, each light source configured to direct exposure light on a respective edge portion of the wafer simultaneously.
摘要翻译：晶片边缘曝光单元包括用于支撑晶片的卡盘。卡盘可绕中心轴线旋转。多个光源以可旋转卡盘的轴线的公共径向距离定位或可移动地定位，每个光源被配置为将曝光光同时引导到晶片的相应边缘部分。

5. 发明申请

US20090063074A1 Mask Haze Early Detection 有权
标题翻译：面具阴霾早期检测
公开(公告)号：US20090063074A1
公开(公告)日：2009-03-05
申请号：US11866514
申请日：2007-10-03
申请人： Wen-Chuan Wang , Shy-Jay Lin , Te-Chih Huang , Chih-Ming Ke , Wei-Yu Su , Heng-Hsin Liu , Tsai-Sheng Gau , Chin-Hsiang Lin
发明人： Wen-Chuan Wang , Shy-Jay Lin , Te-Chih Huang , Chih-Ming Ke , Wei-Yu Su , Heng-Hsin Liu , Tsai-Sheng Gau , Chin-Hsiang Lin
IPC分类号： G06F19/00 , G03F1/00
CPC分类号： G03F1/84 , G03F1/82
摘要： Detecting haze formation on a mask by obtaining an optical property of the mask and determining progress of the haze formation based on the obtained optical property.
摘要翻译：通过获得掩模的光学特性并基于获得的光学性质来确定雾度形成的进展来检测掩模上的雾度形成。

6. 发明申请

US20080195243A1 Method and System for Improving Critical Dimension Uniformity 有权
标题翻译：改进关键尺寸均匀性的方法与系统
公开(公告)号：US20080195243A1
公开(公告)日：2008-08-14
申请号：US11674497
申请日：2007-02-13
申请人： Chun-Hung Lin , Shy-Jay Lin , Heng-Hsin Liu , Chien-Hsun Lin , Jui-Chung Peng , Yao-Wen Guo
发明人： Chun-Hung Lin , Shy-Jay Lin , Heng-Hsin Liu , Chien-Hsun Lin , Jui-Chung Peng , Yao-Wen Guo
IPC分类号： G06F19/00
CPC分类号： H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A method for improving critical dimension of a substrate is provided. Manufacturing data of a plurality of critical dimension deviations corresponding to a plurality of areas on the substrate is collected. A plurality of sensitivity data corresponding to the plurality of areas is also collected. A plurality of exposure dosage offsets corresponding to the plurality of areas are calculated based on the plurality of critical dimension deviations and the plurality of sensitivity data.
摘要翻译：提供了一种改善基板临界尺寸的方法。收集对应于基板上的多个区域的多个临界尺寸偏差的制造数据。还收集对应于多个区域的多个灵敏度数据。基于多个临界尺寸偏差和多个灵敏度数据来计算对应于多个区域的多个曝光剂量偏移量。

7. 发明授权

US5639342A Method of monitoring and controlling a silicon nitride etch step 失效
标题翻译：监测和控制氮化硅蚀刻步骤的方法
公开(公告)号：US5639342A
公开(公告)日：1997-06-17
申请号：US616416
申请日：1996-03-15
申请人： Sen Fu Chen , Wen Cheng Chang , Heng Hsin Liu , Bao Ru Yang
发明人： Sen Fu Chen , Wen Cheng Chang , Heng Hsin Liu , Bao Ru Yang
IPC分类号： H01L21/311 , H01L21/66 , H01L21/00
CPC分类号： H01L22/24 , H01L21/31105 , H01L22/20
摘要： A patterned silicon nitride layer formed over a semiconductor integrated circuit wafer having a layer of pad oxide is often used as a mask for subsequent processing steps. Etching of the silicon nitride layer is difficult to control and can create defects in the pad oxide layer which are difficult to detect before the manufacture of the semiconductor integrated circuit wafer is completed. A method is described using potassium hydroxide treatment and scanning electron microscope evaluation of a test wafer for detection of defects at the silicon nitride etching step. Continued processing of defective wafers can be terminated and the silicon nitride etching step can be controlled using this method.
摘要翻译：在具有垫氧化物层的半导体集成电路晶片上形成的图案化氮化硅层经常用作后续处理步骤的掩模。氮化硅层的蚀刻难以控制，并且可能在半导体集成电路晶片的制造完成之前在衬垫氧化物层中产生难以检测的缺陷。使用氢氧化钾处理和扫描电子显微镜评价在氮化硅蚀刻步骤中检测缺陷的测试晶片的方法。可以终止对缺陷晶片的继续处理，并且可以使用该方法来控制氮化硅蚀刻步骤。

8. 发明授权

US09282592B2 Rotatable heating-cooling plate and element in proximity thereto 有权
标题翻译：可旋转的加热冷却板和靠近其的元件
公开(公告)号：US09282592B2
公开(公告)日：2016-03-08
申请号：US12686276
申请日：2010-01-12
申请人： Jui-Chun Peng , Jacky Chung , Heng-Hsin Liu , Chun-Hung Lin
发明人： Jui-Chun Peng , Jacky Chung , Heng-Hsin Liu , Chun-Hung Lin
IPC分类号： H05B3/68 , H01L21/67 , H01L21/68 , H05B3/14 , H05B1/02
CPC分类号： H05B3/143 , H01L21/67098 , H01L21/67103 , H01L21/67115 , H01L21/67132 , H01L21/67259 , H01L21/681 , H05B1/0233 , H05B3/148 , H05B3/68
摘要： An apparatus for selectively heating/cooling one or more substrates and establishing an approximately uniform temperature in the one or more substrates during a heating or cooling event is described. In one embodiment, the apparatus comprises a rotatable hot/cold plate onto which the one or more substrates are placed and a heating/cooling element disposed in close proximity to the rotatable hot/cold plate for selectively elevating/lowering the temperature of the one or more substrates.
摘要翻译：描述了一种用于在加热或冷却事件期间选择性地加热/冷却一个或多个基底并且在一个或多个基底中建立大致均匀的温度的装置。在一个实施例中，该设备包括一个可旋转的热/冷板，一个或多个基板被放置在该可旋转的热/冷板上，以及靠近可旋转的热/冷板设置的加热/冷却元件，用于选择性地升高/降低一个或多个更多的底物。

9. 发明授权

US08860941B2 Tool induced shift reduction determination for overlay metrology 有权
标题翻译：刀具诱导移位减少确定重叠度量
公开(公告)号：US08860941B2
公开(公告)日：2014-10-14
申请号：US13457832
申请日：2012-04-27
申请人： Yung-Yao Lee , Ying Ying Wang , Heng-Hsin Liu , Heng-Jen Lee
发明人： Yung-Yao Lee , Ying Ying Wang , Heng-Hsin Liu , Heng-Jen Lee
IPC分类号： G01B11/00
CPC分类号： G01B11/00 , G03F7/70633
摘要： One embodiment relates to a method for semiconductor workpiece processing. In this method, a baseline tool induced shift (TIS) is measured by performing a baseline number of TIS measurements on a first semiconductor workpiece. After the baseline TIS has been determined, the method determines a subsequent TIS based on a subsequent number of TIS measurements taken on a first subsequent semiconductor workpiece. The subsequent number of TIS measurements is less than the baseline number of TIS measurements.
摘要翻译：一个实施例涉及一种用于半导体工件加工的方法。在该方法中，通过在第一半导体工件上执行TIS测量的基线数量来测量基线工具诱发位移（TIS）。在确定基线TIS之后，该方法基于在第一后续半导体工件上进行的随后的TIS测量数确定随后的TIS。随后的TIS测量数量小于TIS测量的基线数量。

10. 发明申请

US20130309612A1 ENHANCED SCANNER THROUGHPUT SYSTEM AND METHOD 有权
标题翻译：增强扫描仪通过系统和方法
公开(公告)号：US20130309612A1
公开(公告)日：2013-11-21
申请号：US13473695
申请日：2012-05-17
申请人： Yu-Mei LIU , Chin-Hsiang LIN , Heng-Hsin LIU , Heng-Jen LEE , I-Hsiung HUANG , Chih-Wei LIN
发明人： Yu-Mei LIU , Chin-Hsiang LIN , Heng-Hsin LIU , Heng-Jen LEE , I-Hsiung HUANG , Chih-Wei LIN
IPC分类号： G03F7/20
CPC分类号： G03F7/70358
摘要： A method and system to improve scanner throughput is provided. An image from a reticle is projected onto a substrate using a continuous linear scanning procedure in which an entire column of die or cells of die is scanned continuously, i.e. without stepping to a different location. Each scan includes translating a substrate with respect to a fixed beam. While the substrate is translated, the reticle is also translated. When a first die or cell of die is projected onto the substrate, the reticle translates along a direction opposite the scan direction and as the scan continues along the same direction, the reticle then translates in the opposite direction of the substrate thereby forming an inverted pattern on the next die or cell. The time associated with exposing the substrate is minimized as the stepping operation only occurs after a complete column of cells is scanned.
摘要翻译：提供了一种提高扫描仪吞吐量的方法和系统。使用连续线性扫描程序将来自掩模版的图像投影到基板上，其中连续扫描整列管芯或裸片的单元，即不进入不同的位置。每个扫描包括相对于固定光束平移衬底。当底物被翻译时，掩模版也被翻译。当模具的第一裸片或裸片投影到衬底上时，标线沿着与扫描方向相反的方向平移，并且随着扫描沿着相同的方向继续，标线片然后在衬底的相反方向上平移，从而形成倒置图案在下一个死亡或细胞。与曝光底物相关的时间最小化，因为步进操作仅在扫描完整的单元格列之后才发生。

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