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    • 7. 发明授权
    • Lithography process
    • 平版印刷工艺
    • US08703368B2
    • 2014-04-22
    • US13550036
    • 2012-07-16
    • Yung-Yao LeeYing Ying WangHeng-Hsin LiuChin-Hsiang Lin
    • Yung-Yao LeeYing Ying WangHeng-Hsin LiuChin-Hsiang Lin
    • G03F9/00
    • G03F7/70633
    • A process for use in lithography, such as photolithography for patterning a semiconductor wafer, is disclosed. The process includes receiving an incoming semiconductor wafer having various features and layers formed thereon. A unit-induced overlay (uniiOVL) correction is received and a deformation measurement is performed on the incoming semiconductor wafer in an overlay module. A deformation-induced overlay (defiOVL) correction is generated from the deformation measurement results by employing a predetermined algorithm on the deformation measurement results. The defiOVL and uniiOVL corrections are fed-forward to an exposure module and an exposure process is performed on the incoming semiconductor wafer.
    • 公开了一种用于光刻的方法,例如用于图案化半导体晶片的光刻技术。 该方法包括接收具有形成在其上的各种特征和层的输入半导体晶片。 接收单元引起的覆盖(uniOVL)校正,并且在覆盖模块中对输入的半导体晶片进行变形测量。 通过对变形测量结果采用预定的算法,从变形测量结果生成变形诱导的覆盖(defiOVL)校正。 defiVV和unioVL校正被反馈到曝光模块,并且对输入的半导体晶片进行曝光处理。