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    • 75. 发明授权
    • Polishing apparatus
    • 抛光设备
    • US6074277A
    • 2000-06-13
    • US260403
    • 1999-03-01
    • Hatsuyuki Arai
    • Hatsuyuki Arai
    • B24B37/12B24B49/12B24B49/00
    • B24B37/105B24B37/12B24B49/12
    • A polishing apparatus prevents uneven wear of the platen and improves the operating rate of the apparatus. The polishing apparatus provided with a platen 1 divided into an inner peripheral platen portion 11 and an outer peripheral platen portion 13 and with a carrier 5, wherein by making the inner peripheral platen portion 11 and the outer peripheral platen portion 13 rotate in opposite directions and setting the rotational speeds of the inner peripheral platen portion 11 and the outer peripheral platen portion 13 so that the mean relative speed of a wafer 200 and the inner peripheral platen portion 11 and the mean relative speed of the wafer 200 and the outer peripheral platen portion 13 become substantially equal, it becomes possible to make the amount of wear of the polishing pad 11a of the inner peripheral platen portion 11 and the amount of wear of the polishing pad 13a of the outer peripheral platen portion 13 substantially equal. Preferably, the wafer 200 is made to oscillate so that the wafer 200 overhangs from the inner edge of the inner peripheral platen portion 11 and the outer edge of the outer peripheral platen portion 13.
    • 抛光装置防止压板的不均匀磨损并提高装置的操作速度。 抛光装置设置有分隔成内周压板部分11和外周压板部分13以及载体5的压板1,其中通过使内周压板部分11和外周压板部分13沿相反方向旋转, 设定内周压板部11和外周压板部13的旋转速度,使得晶片200和内周压板部11的平均相对速度以及晶片200和外周压板部的平均相对速度 13变得基本相等,可以使内周压板部分11的抛光垫11a的磨损量和外周压板部分13的抛光垫13a的磨损量基本相等。 优选地,使晶片200振荡,使得晶片200从内周压板部分11的内边缘和外周压板部分13的外边缘突出。
    • 76. 发明授权
    • Planarization method, workpiece measuring method, and surface
planarization apparatus having a measuring device
    • 平面化方法,工件测量方法和具有测量装置的表面平面化装置
    • US6066230A
    • 2000-05-23
    • US26706
    • 1998-02-20
    • Hatsuyuki Arai
    • Hatsuyuki Arai
    • B24B37/12B24B49/04B24D7/14B24B5/00
    • B24B37/16B24B37/245B24B49/04B24D7/14
    • A [work] workpiece processing apparatus and a [work] workpiece measuring method are provided in which a [work] workpiece can be processed or planarized without decreasing a processing rate and/or an operating rate of the apparatus. The apparatus can be reduced in size, and can measure the state of planarization of the [work] workpiece at a high degree of accuracy. The apparatus includes a rotatable surface plate, and a carrier 6 for swinging or oscillating a [work] workpiece 200 in a radial direction of the surface plate 1 while pressing the [work] workpiece 200 against the surface plate 1. The surface plate 1 is divided into an inner surface plate member 11, an intermediate surface plate member 12, and an outer surface plate member 13 which are all disposed in a concentric relation and rotatable independently of each other. The intermediate surface plate member 12 is disposed between the inner and outer surface plate members 11 and 13.
    • 提供[工件]工件加工装置和[工件]工件测量方法,其中可以在不降低加工速度和/或加工速度的情况下对[工件]工件进行加工或平面化。 该装置的尺寸可以减小,并且可以高精度地测量[工件]工件的平坦化状态。 该装置包括可旋转的表面板和用于在将工件200压靠在表面板1上的同时使工件200沿着表面板1的径向摆动或摆动的载体6.表面板1是 分为内表面板构件11,中间面板构件12和外表面板构件13,它们全部以同心关系设置并且彼此独立地旋转。 中间表面板构件12设置在内表面板构件11和外表面板构件13之间。
    • 77. 发明授权
    • Method and apparatus for using pressure differentials through a
polishing pad to improve performance in chemical mechanical polishing
    • 通过抛光垫使用压差的方法和装置,以提高化学机械抛光的性能
    • US5931719A
    • 1999-08-03
    • US918846
    • 1997-08-25
    • Ronald J. NagaharaDawn M. Lee
    • Ronald J. NagaharaDawn M. Lee
    • B24B37/12B24B37/20B24D13/14B24B1/00
    • B24B37/20B24B37/12
    • Methods and apparatus for planarizing the surface of a semiconductor wafer by applying non-uniform pressure distributions to a polishing pad are disclosed. According to one aspect of the present invention, a chemical mechanical polishing apparatus for polishing a surface of a semiconductor wafer includes a polishing pad with a first surface and a second surface. The first surface of the polishing pad is arranged to contact the surface of the semiconductor wafer in order to polish the surface of the semiconductor wafer. The apparatus also includes a mechanism which is used to apply a non-uniform pressure distribution over the second surface of the polishing pad, wherein applying the non-uniform pressure distribution to the polishing pad facilitates evenly polishing the surface of the semiconductor wafer. In one embodiment, the mechanism for applying the non-uniform pressure distribution to the polishing pad is an air bladder arrangement.
    • 公开了通过对抛光垫施加不均匀的压力分布来平坦化半导体晶片的表面的方法和装置。 根据本发明的一个方面,用于抛光半导体晶片的表面的化学机械抛光装置包括具有第一表面和第二表面的抛光垫。 抛光垫的第一表面布置成接触半导体晶片的表面以抛光半导体晶片的表面。 该装置还包括用于在抛光垫的第二表面上施加不均匀压力分布的机构,其中将不均匀的压力分布施加到抛光垫有助于均匀地抛光半导体晶片的表面。 在一个实施例中,将不均匀压力分布施加到抛光垫的机构是气囊装置。
    • 78. 发明授权
    • Temperature compensated chemical mechanical polishing to achieve uniform
removal rates
    • 温度补偿化学机械抛光达到均匀的去除率
    • US5873769A
    • 1999-02-23
    • US866797
    • 1997-05-30
    • Hung-Wen ChiouLai-Juh Chen
    • Hung-Wen ChiouLai-Juh Chen
    • B24B37/015B24B37/12B24B49/14H01L21/306B24B49/00B24B1/00
    • H01L21/02024B24B37/015B24B37/12B24B49/14
    • A method and apparatus are described for Chemical Mechanical Polishing of wafers which achieves a constant removal rate of material from the wafer over the entire surface of the wafer. The wafer is held in a wafer carrier rotating at a wafer carrier angular velocity and is polished using a platen rotating at a platen angular velocity. The pressure exerted on the wafer by the wafer carrier is the largest at the wafer edge and smallest at the center of the wafer. The wafer carrier is divided into a number of wafer carrier circular segments so that the temperature of each wafer carrier circular segment can be controlled. The platen is divided into a number of platen circular segments so that the temperature of each platen circular segment can be controlled. The temperatures of the wafer carrier circular segments and the platen circular segments are then adjusted to provide a removal rate of material from the wafer which is uniform across the surface of the wafer.
    • 描述了用于在晶片的整个表面上实现来自晶片的材料的恒定去除速率的晶片的化学机械抛光的方法和装置。 将晶片保持在以晶片载体角速度旋转的晶片载体中,并使用以压板角速度旋转的压板进行抛光。 由晶片载体施加在晶片上的压力在晶片边缘处最大,在晶片中心处最小。 晶片载体被分成多个晶片载体圆形段,从而可以控制每个晶片载体圆形段的温度。 压板被分成多个压板圆形段,从而可以控制每个压板圆形段的温度。 然后调整晶片载体圆形段和压板圆形段的温度以提供从晶片的材料的去除速率,其在晶片的表面上是均匀的。