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1. 发明授权

US07638030B2 Electrolytic processing apparatus and electrolytic processing method 有权
标题翻译：电解处理装置及电解处理方法
公开(公告)号：US07638030B2
公开(公告)日：2009-12-29
申请号：US10669468
申请日：2003-09-25
申请人： Osamu Nabeya , Masayuki Kumekawa , Hozumi Yasuda , Itsuki Kobata , Takeshi Iizumi , Nobuyuki Takada , Koichi Fukaya , Mitsuhiko Shirakashi , Takayuki Saito , Yasushi Toma , Tsukuru Suzuki , Kaoru Yamada , Yuji Makita
发明人： Osamu Nabeya , Masayuki Kumekawa , Hozumi Yasuda , Itsuki Kobata , Takeshi Iizumi , Nobuyuki Takada , Koichi Fukaya , Mitsuhiko Shirakashi , Takayuki Saito , Yasushi Toma , Tsukuru Suzuki , Kaoru Yamada , Yuji Makita
IPC分类号： C25F7/00 , B23H5/06
CPC分类号： C25F7/00
摘要： An electrolytic processing apparatus which, while eliminating a CMP processing entirely or reducing a load on a CMP processing to the least possible extent, can process and flatten a conductive material formed in the surface of a substrate, or can remove (clean) extraneous matter adhering to the surface of a workpiece such as a substrate. The present invention includes an electrode section including a plurality of electrode members disposed in parallel, each electrode member including an electrode and an ion exchanger covering the surface of the electrode, a holder for holding a workpiece, which is capable of bringing the workpiece close to or into contact with the ion exchanger of the electrode member, and a power source to be connected to the electrode of each electrode member of the electrode section. The ion exchanger of the electrode member includes an ion exchanger having an excellent surface smoothness and an ion exchanger having a large ion exchange capacity.
摘要翻译：一种在完全消除CMP处理或者尽可能减少CMP处理负荷的电解处理装置可以处理和平坦化形成在基板表面上的导电材料，或者可以除去（清洁）附着的附着物到工件（例如基板）的表面。本发明包括一个电极部分，它包括平行设置的多个电极部件，每个电极部件包括一个电极和一个覆盖电极表面的离子交换器，一个用于保持工件的保持器，它能使工件靠近或与电极部件的离子交换器接触，以及要连接到电极部分的每个电极部件的电极的电源。电极构件的离子交换器包括具有优异表面平滑度的离子交换器和离子交换容量大的离子交换器。

2. 发明申请

US20070122559A1 Processing liquid coating apparatus and a processing liquid coating method 审中-公开
标题翻译：加工液体涂布装置和处理液涂布方法
公开(公告)号：US20070122559A1
公开(公告)日：2007-05-31
申请号：US10573915
申请日：2004-10-27
申请人： Mitsuhiko Shirakashi , Masayoshi Hirose
发明人： Mitsuhiko Shirakashi , Masayoshi Hirose
IPC分类号： G21H5/00 , H01F41/00 , G21H1/00 , B01J19/08
CPC分类号： H01L21/68728 , G03F7/162 , G03F7/3021 , H01L21/6715 , H01L21/68707
摘要： The present invention relates to a processing liquid coating apparatus and a processing liquid coating method suitable for use in a lithography process for forming fine circuit patterns on a surface of a substrate such as a semiconductor wafer. The processing liquid coating apparatus according to the present invention includes a substrate holder (1) for holing and rotating a substrate (W), and a processing liquid supply unit (2) disposed apart from the substrate (w) held by the substrate holder (1). The processing liquid supply unit (2) has a plurality of supply ports (5, 6) for supplying a processing liquid to a plurality of portions including a central portion (C) of a surface of the substrate (W). A resist liquid or a developer is used as the processing liquid.
摘要翻译：本发明涉及一种适用于在诸如半导体晶片的基板的表面上形成精细电路图案的光刻工艺中的处理液体涂覆装置和处理液体涂覆方法。根据本发明的处理液体涂覆装置包括用于使基板（W）进行孔和旋转的基板保持器（1）和与由基板保持器（10）保持的基板（w）分开设置的处理液体供应单元（2） 1）。处理液供给单元（2）具有多个用于向包括基板（W）的表面的中心部（C）的部分供给处理液的供给口（5,6）。使用抗蚀剂液体或显影剂作为处理液。

3. 发明授权

US07101259B2 Polishing method and apparatus 失效
公开(公告)号：US07101259B2
公开(公告)日：2006-09-05
申请号：US10694047
申请日：2003-10-28
申请人： Norio Kimura , Mitsuhiko Shirakashi , Katsuhiko Tokushige , Masao Asami , Naoto Miyashita , Masako Kodera , Yoshitaka Matsui , Soichi Nadahara , Hiroshi Tomita
发明人： Norio Kimura , Mitsuhiko Shirakashi , Katsuhiko Tokushige , Masao Asami , Naoto Miyashita , Masako Kodera , Yoshitaka Matsui , Soichi Nadahara , Hiroshi Tomita
IPC分类号： B24B49/00 , B24B51/00 , H01L21/00 , B24B1/00
CPC分类号： B24B37/345
摘要： A polishing apparatus is used for chemical mechanical polishing a copper (Cu) layer formed on a substrate such as a semiconductor wafer and then cleaning the polished substrate. The polishing apparatus has a polishing section having a turntable with a polishing surface and a top ring for holding a substrate and pressing the substrate against the polishing surface to polish a surface having a semiconductor device thereon, and a cleaning section for cleaning the substrate which has been polished. The cleaning section has an electrolyzed water supply device for supplying electrolyzed water to the substrate to clean the polished surface of the substrate while supplying electrolyzed water to the substrate.

4. 发明授权

US06935932B2 Polishing apparatus and method 失效
公开(公告)号：US06935932B2
公开(公告)日：2005-08-30
申请号：US10784945
申请日：2004-02-25
申请人： Norio Kimura , Mitsuhiko Shirakashi , Katsuya Okumura , You Ishii , Junji Kunisawa , Hiroyuki Yano
发明人： Norio Kimura , Mitsuhiko Shirakashi , Katsuya Okumura , You Ishii , Junji Kunisawa , Hiroyuki Yano
IPC分类号： B24B9/06 , B24B37/12 , B24B37/34 , H01L21/00 , B24B1/00
CPC分类号： B24B37/345 , B24B9/065 , B24B37/12 , H01L21/67046
摘要： A polishing apparatus and method has a function of polishing a surface of a film formed on a substrate to a flat mirror finish and a function of polishing unnecessary metal film such as copper film deposited on an outer peripheral portion of the substrate to remove such unnecessary metal film. The polishing apparatus comprises a surface polishing mechanism comprising a polishing table having a polishing surface and a top ring for holding the substrate and pressing the substrate against the polishing surface of the polishing table to thereby polish a surface of the substrate, and an outer periphery polishing mechanism for polishing an outer peripheral portion of the substrate.

5. 发明授权

US06875335B2 Electrolytic machining method and apparatus 有权
标题翻译：电解加工方法及装置
公开(公告)号：US06875335B2
公开(公告)日：2005-04-05
申请号：US10449515
申请日：2003-06-02
申请人： Yuzo Mori , Mitsuhiko Shirakashi , Takayuki Saito , Yasushi Toma , Akira Fukunaga , Itsuki Kobata
发明人： Yuzo Mori , Mitsuhiko Shirakashi , Takayuki Saito , Yasushi Toma , Akira Fukunaga , Itsuki Kobata
IPC分类号： B23H3/08 , C25D11/02 , C25F3/00 , B23H3/00 , C25B9/00 , C25B13/00 , C25B15/00 , C25D17/00
CPC分类号： C25F3/00 , B23H3/08
摘要： An anode as a workpiece, and a cathode opposed to the anode with a predetermined spacing are placed in ultrapure water. A catalytic material promoting dissociation of the ultrapure water and having water permeability is disposed between the workpiece and the cathode. A flow of the ultrapure water is formed inside the catalytic material, with a voltage being applied between the workpiece and the cathode, to decompose water molecules in the ultrapure water into hydrogen ions and hydroxide ions, and supply the resulting hydroxide ions to a surface of the workpiece, thereby performing removal processing of or oxide film formation on the workpiece through a chemical dissolution reaction or an oxidation reaction mediated by the hydroxide ions. Thus, clean processing can be performed by use of hydroxide ions in ultrapure water, with no impurities left behind on the processed surface of the workpiece.
摘要翻译：将作为工件的阳极和与阳极相对的具有预定间隔的阴极置于超纯水中。在工件和阴极之间设置促进超纯水的离解并具有透水性的催化材料。在催化材料内部形成超纯水流，在工件和阴极之间施加电压，将超纯水中的水分子分解为氢离子和氢氧根离子，并将得到的氢氧根离子供给到从而通过化学溶解反应或由氢氧根离子介导的氧化反应来进行工件的去除处理或氧化膜形成。因此，可以通过在超纯水中使用氢氧根离子进行清洁处理，在工件的加工表面上不会留下杂质。

6. 发明授权

US06543080B1 Apparatus and method for cleaning semiconductor substrate 有权
标题翻译：用于清洁半导体衬底的装置和方法
公开(公告)号：US06543080B1
公开(公告)日：2003-04-08
申请号：US09635848
申请日：2000-08-11
申请人： Hiroshi Tomita , Soichi Nadahara , Mitsuhiko Shirakashi , Kenya Ito , Yuki Inoue
发明人： Hiroshi Tomita , Soichi Nadahara , Mitsuhiko Shirakashi , Kenya Ito , Yuki Inoue
IPC分类号： B08B312
CPC分类号： B08B3/12
摘要： A semiconductor substrate cleaning apparatus and method are capable of efficiently removing contamination from both the obverse and reverse sides of a semiconductor substrate. A single cleaning liquid supply nozzle for supplying a cleaning liquid to both the obverse and reverse sides of a semiconductor substrate to be cleaned is placed at a distance from the outer peripheral edge of the substrate. An ultrasonic vibrator applies ultrasonic waves to both the obverse and reverse sides of the substrate. Four driving rollers are disposed in contact with the outer peripheral edge of the substrate. The driving rollers are adapte to rotate while being engaged with the outer peripheral edge of the substrate thereby drivingly rotating the substrate.
摘要翻译：半导体衬底清洁装置和方法能够有效地去除半导体衬底的正面和反面两侧的污染物。将待清洗的半导体衬底的正面和反面两侧的清洗液供给单个清洗液供给喷嘴设置在与衬底的外周边缘一定距离处。超声波振动器对基板的正反面施加超声波。四个驱动辊设置成与基板的外周边缘接触。驱动辊适于旋转，同时与基板的外周边缘接合，从而驱动旋转基板。

7. 发明授权

US06494220B1 Apparatus for cleaning a substrate such as a semiconductor wafer 有权
标题翻译：用于清洁诸如半导体晶片的基板的装置
公开(公告)号：US06494220B1
公开(公告)日：2002-12-17
申请号：US09584091
申请日：2000-05-31
申请人： Naoki Matsuda , Kenya Ito , Mitsuhiko Shirakashi
发明人： Naoki Matsuda , Kenya Ito , Mitsuhiko Shirakashi
IPC分类号： B08B304
CPC分类号： H01L21/67051 , B08B1/04 , B08B3/02 , Y10S134/902
摘要： A cleaning apparatus comprises a holder for holding a substrate such as a semiconductor wafer horizontally and rotating the substrate about its central axis, while conducting a cleaning operation of the substrate by supplying a cleaning liquid thereto. The apparatus further comprises a cleaning vessel including a side wall encircling the substrate rotated by the holder to intercept the cleaning liquid supplied to and scattered from the rotating substrate and then finally drain the cleaning liquid. There is provided a vent duct for carrying gas from the inside of the cleaning vessel to the outside of the same. The vent duct includes an inlet provided at substantially the same level as that of the substrate for introducing the gas into the vent duct. The side wall may include an inner surface along which the cleaning liquid scattered from the substrate flows downward in a spiral manner, with the inner surface, being of a construction which impedes the spiral movement of the liquid in a circumferential or peripheral direction.
摘要翻译：清洁装置包括用于水平地保持诸如半导体晶片的基板并且使基板围绕其中心轴旋转的保持器，同时通过向其提供清洁液体进行清洁操作。该装置还包括一个清洁容器，该清洁容器包括围绕由保持器旋转的基板的侧壁，以拦截供应到旋转基板并从旋转基板散射的清洗液体，然后最终排出清洗液体。设置有用于将气体从清洁容器的内部输送到其外部的通风管道。排气管道包括与基板基本相同的水平设置的入口，用于将气体引入通风管道。侧壁可以包括内表面，从衬底散射的清洁液体沿着内表面以螺旋方式向下流动，内表面具有阻止液体在周向或周向上的螺旋运动的结构。

8. 发明授权

US07427345B2 Method and device for regenerating ion exchanger, and electrolytic processing apparatus 有权
公开(公告)号：US07427345B2
公开(公告)日：2008-09-23
申请号：US10432397
申请日：2002-11-29
申请人： Takayuki Saito , Tsukuru Suzuki , Yuji Makita , Kaoru Yamada , Masayuki Kumekawa , Hozumi Yasuda , Osamu Nabeya , Kazuto Hirokawa , Mitsuhiko Shirakashi , Yasushi Toma , Itsuki Kobata
发明人： Takayuki Saito , Tsukuru Suzuki , Yuji Makita , Kaoru Yamada , Masayuki Kumekawa , Hozumi Yasuda , Osamu Nabeya , Kazuto Hirokawa , Mitsuhiko Shirakashi , Yasushi Toma , Itsuki Kobata
IPC分类号： C25D17/00 , C25B15/00 , B23H3/00
CPC分类号： C25F3/00 , B01J49/30 , C25F7/00
摘要： A method and device for regenerating an ion exchanger can regenerate an ion exchanger easily and quickly, and can minimize a load upon cleaning of the regenerated ion exchanger and disposal of waste liquid. A method for regenerating a contaminated ion exchanger includes: providing a pair of a regeneration electrode and a counter electrode, a partition disposed between the electrodes, and an ion exchanger to be regenerated disposed between the counter electrode and the partition; and applying a voltage between the regeneration electrode and the counter electrode while supplying a liquid between the partition and the regeneration electrode and also supplying a liquid between the partition and the counter electrode.

9. 发明申请

US20080200100A1 Substrate Processing Apparatus 有权
标题翻译：基板加工装置
公开(公告)号：US20080200100A1
公开(公告)日：2008-08-21
申请号：US11630512
申请日：2006-04-18
申请人： Tamami Takahashi , Mitsuhiko Shirakashi , Kenya Ito , Kazuyuki Inoue , Kenji Yamaguchi , Masaya Seki
发明人： Tamami Takahashi , Mitsuhiko Shirakashi , Kenya Ito , Kazuyuki Inoue , Kenji Yamaguchi , Masaya Seki
IPC分类号： B24B9/06 , H01L21/304 , B24B49/12
CPC分类号： H01L21/67219 , B24B9/065 , B24B49/04 , H01L21/302 , H01L21/461 , H01L21/67253 , H01L21/68707 , H01L21/68728
摘要： A substrate processing apparatus (1) includes first and second polishing units (70A, 70B) for polishing a peripheral portion of a substrate (W), a primary cleaning unit (100) for cleaning the substrate (W), a secondary cleaning and drying unit (110) for drying the substrate (W) cleaned in the primary cleaning unit (100), and a measurement unit (30) for measuring the peripheral portion of the substrate (W). The measurement unit (30) includes a mechanism for measurement required for polishing in the first and second polishing units (70A and 70B), such as a diameter measurement mechanism, a cross-sectional shape measurement mechanism, or a surface condition measurement mechanism.
摘要翻译：一种基板处理装置（1）包括：用于研磨基板周边部分的第一和第二研磨单元（70A，70B）;用于清洗基板（W）的主清洁单元（100），二次清洗以及用于干燥在主清洗单元（100）中清洁的基板（W）的干燥单元（110），以及用于测量基板（W）的周边部分的测量单元（30）。测量单元（30）包括用于在第一和第二研磨单元（70A和70B）中抛光所需的测量机构，例如直径测量机构，横截面形状测量机构或表面状态测量机构。

10. 发明申请

US20070187259A1 Substrate processing apparatus and method 审中-公开
标题翻译：基板加工装置及方法
公开(公告)号：US20070187259A1
公开(公告)日：2007-08-16
申请号：US11715971
申请日：2007-03-09
申请人： Itsuki Kobata , Mitsuhiko Shirakashi , Masayuki Kumekawa , Takayuki Saito , Yasushi Toma , Tsukuru Suzuki , Kaoru Yamada , Yuji Makita , Hozumi Yasuda
发明人： Itsuki Kobata , Mitsuhiko Shirakashi , Masayuki Kumekawa , Takayuki Saito , Yasushi Toma , Tsukuru Suzuki , Kaoru Yamada , Yuji Makita , Hozumi Yasuda
IPC分类号： B23H5/00
CPC分类号： H01L21/6708 , C25F3/00 , C25F7/00
摘要： A substrate processing apparatus can perform an electrolytic processing, which is different from a common, conventional etching, to remove (clean off) a conductive material (film) formed on or adhering to a bevel portion, etc. of a substrate, or process a peripheral portion of a substrate through an electrochemical action. The substrate processing apparatus includes: an electrode section having a plurality of electrodes which are laminated with insulators being interposed, and having a holding portion which is to be opposed to a peripheral portion of a substrate; an ion exchanger disposed in the holding portion of the electrode section; a liquid supply section for supplying a liquid to the holding position of the electrode section; and a power source for applying a voltage to the electrodes of the electrode section so that the electrodes alternately have different polarities.
摘要翻译：基板处理装置可以执行与普通的常规蚀刻不同的电解处理，以去除（清除）形成在或附着于基板的斜面部分等上的导电材料（膜）或处理通过电化学作用的衬底的周边部分。基板处理装置包括：具有多个电极的电极部，该多个电极层叠有绝缘体，并且具有与基板的周边部相对的保持部; 设置在电极部的保持部中的离子交换部; 液体供应部分，用于将液体供应到电极部分的保持位置; 以及用于向电极部分的电极施加电压使得电极交替具有不同极性的电源。

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