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1. 发明授权

US5873769A Temperature compensated chemical mechanical polishing to achieve uniform removal rates 失效
标题翻译：温度补偿化学机械抛光达到均匀的去除率
公开(公告)号：US5873769A
公开(公告)日：1999-02-23
申请号：US866797
申请日：1997-05-30
申请人： Hung-Wen Chiou , Lai-Juh Chen
发明人： Hung-Wen Chiou , Lai-Juh Chen
IPC分类号： B24B37/015 , B24B37/12 , B24B49/14 , H01L21/306 , B24B49/00 , B24B1/00
CPC分类号： H01L21/02024 , B24B37/015 , B24B37/12 , B24B49/14
摘要： A method and apparatus are described for Chemical Mechanical Polishing of wafers which achieves a constant removal rate of material from the wafer over the entire surface of the wafer. The wafer is held in a wafer carrier rotating at a wafer carrier angular velocity and is polished using a platen rotating at a platen angular velocity. The pressure exerted on the wafer by the wafer carrier is the largest at the wafer edge and smallest at the center of the wafer. The wafer carrier is divided into a number of wafer carrier circular segments so that the temperature of each wafer carrier circular segment can be controlled. The platen is divided into a number of platen circular segments so that the temperature of each platen circular segment can be controlled. The temperatures of the wafer carrier circular segments and the platen circular segments are then adjusted to provide a removal rate of material from the wafer which is uniform across the surface of the wafer.
摘要翻译：描述了用于在晶片的整个表面上实现来自晶片的材料的恒定去除速率的晶片的化学机械抛光的方法和装置。将晶片保持在以晶片载体角速度旋转的晶片载体中，并使用以压板角速度旋转的压板进行抛光。由晶片载体施加在晶片上的压力在晶片边缘处最大，在晶片中心处最小。晶片载体被分成多个晶片载体圆形段，从而可以控制每个晶片载体圆形段的温度。压板被分成多个压板圆形段，从而可以控制每个压板圆形段的温度。然后调整晶片载体圆形段和压板圆形段的温度以提供从晶片的材料的去除速率，其在晶片的表面上是均匀的。

2. 发明授权

US07003366B1 Diagnostic system and operating method for the same 失效
标题翻译：诊断系统和操作方法相同
公开(公告)号：US07003366B1
公开(公告)日：2006-02-21
申请号：US11109225
申请日：2005-04-18
申请人： Hung-Wen Chiou
发明人： Hung-Wen Chiou
IPC分类号： G06F15/18 , G06F19/00
CPC分类号： G06N5/048 , G06N5/045
摘要： An operating method for a fault detection of a semiconductor process and a diagnostic system for fault detection in a semiconductor process are described. By using the method and the diagnostic system, the real-time process parameters collected during the process is performed by the tool become meaningful and are correlated with the historic process performance data obtained by the post process metrology process. Moreover, the method and the diagnostic system further provide an alarm index for the process performed on the tool to actually reflect the process environment during the process is performed after correlating the real-time process parameters and the historic process performance data. With referring to the alarm index, the current process performance under the real-time process parameters in the tool can be accurately diagnosed.
摘要翻译：描述了用于半导体工艺的故障检测的操作方法和用于半导体工艺中的故障检测的诊断系统。通过使用该方法和诊断系统，该过程中收集的实时过程参数由工具执行变得有意义，并与后处理计量过程获得的历史过程绩效数据相关。此外，该方法和诊断系统进一步提供了在工具上执行的过程的报警指标，以便在将实时过程参数和历史过程执行数据相关联之后，在处理过程中实际反映过程环境。通过参考报警指标，可以准确地诊断工具中实时过程参数下的当前进程性能。

3. 发明授权

US06376392B1 PECVD process for ULSI ARL 有权
标题翻译： ULEC ARL的PECVD工艺
公开(公告)号：US06376392B1
公开(公告)日：2002-04-23
申请号：US09859362
申请日：2001-05-18
申请人： Shyh-Dar Lee , Chung-I Chang , Hung-Wen Chiou
发明人： Shyh-Dar Lee , Chung-I Chang , Hung-Wen Chiou
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , C23C16/30 , G03F7/091 , H01L21/02211 , H01L21/02274 , H01L21/0276 , H01L21/31633
摘要： A deposition process for silicon oxycarbide films suitable for use as anti-reflection coatings is described. The, process is based on plasma enhanced CVD of silane mixed with methyl-silane, trimethyl-silane, or tetramethyl-silane (together with a carrier gas). Provided the relative gas flow rates are maintained within the ranges specified, films having excellent ARL properties are obtained, with photoresist patterns formed on said films being free of overhangs and footings.
摘要翻译：描述了适合用作抗反射涂层的碳硅氧烷膜的沉积工艺。该方法基于与甲基硅烷，三甲基硅烷或四甲基硅烷（与载气一起）混合的硅烷的等离子体增强CVD。如果相对气体流量保持在规定的范围内，则获得具有优异ARL性质的膜，其中形成在所述膜上的光致抗蚀剂图案没有悬垂和底脚。

4. 发明申请

US20060235559A1 "RUN-TO-RUN CONTROL SYSTEM AND OPERATING METHOD OF THE SAME" 有权
标题翻译： “RUN-TO-RUN控制系统及其操作方法”
公开(公告)号：US20060235559A1
公开(公告)日：2006-10-19
申请号：US11109168
申请日：2005-04-18
申请人： Hung-Wen Chiou
发明人： Hung-Wen Chiou
IPC分类号： G06F19/00
CPC分类号： G05B19/41865 , Y02P90/20 , Y02P90/26
摘要： A run-to-run control system and a run-to-run controlling method are proposed. The tool process parameters are real-time collected during the semiconductor process is performed and are regarded as the effective factors in the process for providing an optimal operation variables to the tool for the next process run. After modeling the metrology parameters with a set of the tool process parameters with respect to the semiconductor process for its corresponding process run, a set of optimal operation variables is determined by the controller and output to the tool to modify the process recipe of the process. Hence, the process recipe is real-time changed with the process environment to obtain the optimal process performance.
摘要翻译：提出了运行控制系统和运行控制方法。在半导体工艺执行过程中实时采集工具工艺参数，并将其视为在下一个工艺运行中为工具提供最佳操作变量的过程中的有效因素。在使用一组关于半导体工艺的工具过程参数对其相应的过程运行建模测量参数之后，控制器确定一组最佳操作变量，并输出到工具以修改过程的过程配方。因此，流程配方与流程环境实时更改，以获得最佳过程性能。

5. 发明授权

US07117059B1 Run-to-run control system and operating method of the same 有权
标题翻译：运行到运行的控制系统和操作方法相同
公开(公告)号：US07117059B1
公开(公告)日：2006-10-03
申请号：US11109168
申请日：2005-04-18
申请人： Hung-Wen Chiou
发明人： Hung-Wen Chiou
IPC分类号： G06F19/00
CPC分类号： G05B19/41865 , Y02P90/20 , Y02P90/26
摘要： A run-to-run control system and a run-to-run controlling method are proposed. The tool process parameters are real-time collected during the semiconductor process is performed and are regarded as the effective factors in the process for providing an optimal operation variables to the tool for the next process run. After modeling the metrology parameters with a set of the tool process parameters with respect to the semiconductor process for its corresponding process run, a set of optimal operation variables is determined by the controller and output to the tool to modify the process recipe of the process. Hence, the process recipe is real-time changed with the process environment to obtain the optimal process performance.
摘要翻译：提出了运行控制系统和运行控制方法。在半导体工艺执行过程中实时采集工具工艺参数，并将其视为在下一个工艺运行中为工具提供最佳操作变量的过程中的有效因素。在使用一组关于半导体工艺的工具过程参数对其相应的过程运行建模测量参数之后，控制器确定一组最佳操作变量，并输出到工具以修改过程的过程配方。因此，流程配方与流程环境实时更改，以获得最佳过程性能。

6. 发明授权

US06720885B1 Method for generating a signal vibration alert 有权
标题翻译：产生信号振动警报的方法
公开(公告)号：US06720885B1
公开(公告)日：2004-04-13
申请号：US09993436
申请日：2001-11-13
申请人： Chin-Wen Lee , Hung-Wen Chiou
发明人： Chin-Wen Lee , Hung-Wen Chiou
IPC分类号： G08B2100
CPC分类号： G05B23/0235
摘要： The present invention provides a method for signal vibration alert. The method of the present invention recognizes significant substantial swerves and corresponding substantial edge-to-edge differences by eliminating the adverse effect of noise among signals generated by an apparatus. When the frequency of the substantial edge-to-edge differences that exceed an acceptable range of the frequency limit is too large, the method of the present invention automatically generates an alert to indicate aberration in the apparatus such that the monitoring staff is informed and allowed to take necessary measures responding to the aberration.
摘要翻译：本发明提供了一种用于信号振动警报的方法。本发明的方法通过消除由装置产生的信号之间的噪声的不利影响来识别显着的实质性转变和相应的实质边缘到边缘的差异。当超过频率限制的可接受范围的实质边缘到边缘差的频率太大时，本发明的方法自动产生警报以指示装置中的像差，使得监视人员被通知并被允许采取必要措施应对畸形。

7. 发明授权

US06704691B2 Method and system for in-line monitoring process performance using measurable equipment signals 有权
标题翻译：使用可测量设备信号在线监测过程性能的方法和系统
公开(公告)号：US06704691B2
公开(公告)日：2004-03-09
申请号：US10054822
申请日：2002-01-25
申请人： Hung-Wen Chiou
发明人： Hung-Wen Chiou
IPC分类号： G06F1500
CPC分类号： H01L22/20
摘要： A method and system for in-line monitoring process performance during wafer fabrication. First signals generated by a fabrication tool are collected and filtered to exclude abnormal signals while a model wafer is processed. The filtered first signals are regulated and normalized to generate model wafer data. After the fabrication process is completed, the model wafer is measured to generate a measured value representing the process quality thereof. The model wafer data and the measured value of the model wafer are used to build a correlation model by a correlation unit. Second signals generated by the fabrication tool are collected when a run wafer is processed, and then filtered to exclude abnormal signals. The filtered second signals are regulated and normalized to generate run wafer data. A predicted value representing the process quality of the run wafer is generated by inputting the run wafer data into the correlation model.
摘要翻译：在晶圆制造期间在线监测工艺性能的方法和系统。收集和过滤由制造工具产生的第一信号以排除模型晶片被处理时的异常信号。滤波的第一信号被调节和归一化以产生模型晶片数据。在制造过程完成之后，测量模型晶片以产生表示其工艺质量的测量值。模型晶圆数据和模型晶圆的测量值用于通过相关单元建立相关模型。当处理运行晶片时收集由制造工具产生的第二信号，然后过滤以排除异常信号。滤波的第二信号被调节和归一化以产生运行晶片数据。通过将运行的晶片数据输入相关模型来生成表示运行晶片的处理质量的预测值。

8. 发明授权

US06586265B2 Method and apparatus of tool matching for a semiconductor manufacturing process 失效
公开(公告)号：US06586265B2
公开(公告)日：2003-07-01
申请号：US09996112
申请日：2001-11-27
申请人： Hung-Wen Chiou , Chia-Chun Tso
发明人： Hung-Wen Chiou , Chia-Chun Tso
IPC分类号： H01L2166
CPC分类号： G05B19/41875 , H01L21/67276 , Y02P90/22 , Y10T29/41
摘要： The present invention provides a method of tool matching for a semiconductor manufacturing process having a first and second path completed by serial combinations of tools for processing of wafers. The method comprises the steps of providing a target value, obtaining a first and second test result of the wafers processed through the first and second path respectively, calculating differences between the first and second test result and the target value to obtain a first and second estimate respectively, and selecting one of the first and second paths according to the estimates.

9. 发明授权

US06303049B1 Chemical mechanical abrasive composition for use in semiconductor processing 有权
标题翻译：用于半导体加工的化学机械磨料组合物
公开(公告)号：US06303049B1
公开(公告)日：2001-10-16
申请号：US09418328
申请日：1999-10-14
申请人： Tsung-Ho Lee , Tsui-Ping Yeh , Hung-Wen Chiou
发明人： Tsung-Ho Lee , Tsui-Ping Yeh , Hung-Wen Chiou
IPC分类号： C09K1300
CPC分类号： C09K3/1463 , C09G1/02
摘要： The invention provides a chemical-mechanical abrasive composition for semiconductor processing, which composition is characterized by comprising a water-soluble anionic chemical. According to the invention, said water-soluble anionic chemical would be coated on the surface of a metal film during the polishing of said metal film so as to inhibit the formation of depressions on the resultant metal circuits. In another aspect, the invention provides a chemical-mechanical abrasive composition in the form of a slurry comprising 70-99.5% by weight of an aqueous medium; 0.1-25% by weight of an abrasive particle; 0.01-2.0% by weight of an abrasion enhancer; and 0.01-1% by weight of a water-soluble anionic chemical. The chemical-mechanical abrasive composition of the invention may further comprise an oxidant to enhance the abrasion rate.
摘要翻译：本发明提供了用于半导体加工的化学 - 机械磨料组合物，该组合物的特征在于包含水溶性阴离子化学品。根据本发明，在抛光所述金属膜期间，所述水溶性阴离子化合物将被涂覆在金属膜的表面上，以便抑制在所得金属电路上形成凹陷。在另一方面，本发明提供了一种包含70-99.5重量％的水性介质的浆料形式的化学机械磨料组合物; 0.1-25重量％的磨料颗粒; 0.01-2.0重量％的磨损增强剂; 和0.01-1重量％的水溶性阴离子化合物。本发明的化学 - 机械磨料组合物还可以包含氧化剂以增强磨损速率。

10. 发明申请

US20090083747A1 METHOD FOR MANAGING APPLICATION PROGRAMS BY UTILIZING REDUNDANCY AND LOAD BALANCE 审中-公开
标题翻译：通过利用冗余和负荷平衡来管理应用程序的方法
公开(公告)号：US20090083747A1
公开(公告)日：2009-03-26
申请号：US12033022
申请日：2008-02-19
申请人： Mao-Gue Huang , Hung-Wen Chiou
发明人： Mao-Gue Huang , Hung-Wen Chiou
IPC分类号： G06F9/50
CPC分类号： G06F11/1438 , G06F9/485 , G06F11/3409 , G06F2201/865
摘要： A method for managing application programs includes: monitoring whether there is at least an application program which is unresponsive in a plurality of started application programs; and automatically restarting the application program which is unresponsive, and averagely allocating a system resource for the plurality of application programs according to a number of the plurality of application programs.
摘要翻译：一种用于管理应用程序的方法包括：监视在多个启动的应用程序中是否存在至少一个无响应的应用程序; 并且自动地重新启动无响应的应用程序，并且根据多个应用程序的数目平均分配用于多个应用程序的系统资源。

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