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71. 发明申请

US20060082747A1 Exposure method, exposure tool and method of manufacturing a semiconductor device 失效
标题翻译：曝光方法，曝光工具及制造半导体器件的方法
公开(公告)号：US20060082747A1
公开(公告)日：2006-04-20
申请号：US11249712
申请日：2005-10-14
申请人： Kazuya Fukuhara , Shinichi Ito
发明人： Kazuya Fukuhara , Shinichi Ito
IPC分类号： G03B27/42
CPC分类号： G03F7/70341 , G03B27/42 , G03F7/70358
摘要： An exposure method is disclosed, which includes forming on a substrate a resist film having first and second exposure fields arranged in a column direction, mounting the substrate on a scanning exposure tool in order to project a design pattern on the first and second exposure fields, forming a liquid immersion medium fluid film by using a liquid immersion medium fluid film forming unit, and projecting the design pattern onto the first or second exposure fields by varying an optical pattern image generated at the optical pattern image generating unit while moving the substrate in a direction in parallel with the column direction, wherein the projection of the design pattern onto the first and second exposure fields is continuously carried out without a change in a moving direction of the substrate and a direction of the flow of the liquid immersion medium fluid film.
摘要翻译：公开了一种曝光方法，其包括在基板上形成具有沿列方向布置的第一和第二曝光场的抗蚀剂膜，将基板安装在扫描曝光工具上，以便将设计图案投影在第一和第二曝光场上，通过使用液浸介质流体膜形成单元形成液浸介质流体膜，并且通过改变在所述光学图案图像生成单元处生成的光学图案图像将所述设计图案投影到所述第一或第二曝光区域，同时将所述基板移动到方向与列方向平行，其中连续执行设计图案在第一和第二曝光场上的投影，而不改变基板的移动方向和液浸介质流体膜的流动方向。

72. 发明申请

US20060046168A1 Method for designing an illumination light source, method for designing a mask pattern, method for manufacturing a photomask, method for manufacturing a semiconductor device and a computer program product 有权
标题翻译：照明光源的设计方法，掩模图案的设计方法，光掩模的制造方法，半导体装置的制造方法以及计算机程序产品
公开(公告)号：US20060046168A1
公开(公告)日：2006-03-02
申请号：US11208557
申请日：2005-08-23
申请人： Kazuya Fukuhara
发明人： Kazuya Fukuhara
IPC分类号： G03C5/00 , G03F9/00 , G06F17/50 , G03F1/00
CPC分类号： G03F7/705 , G03F7/701 , G03F7/70566
摘要： A method for designing an illumination light source, includes acquiring a control feature to control a dimension of a transferred pattern of a mask pattern; designating a plurality of illumination elements illuminating the mask pattern; designating first illumination lights to each of first polarization states of a light emitted from each of the illumination elements; calculating a first optical image of the control feature, formed on a first imaging plane by each of the first illumination lights; and determining an illumination shape and a polarization state distribution of the light, based on an optical characteristic of the first optical image.
摘要翻译：一种用于设计照明光源的方法，包括获取控制特征以控制掩模图案的转印图案的尺寸; 指定照射所述掩模图案的多个照明元件; 将第一照明光指定为从每个照明元件发射的光的第一偏振态中的每一个; 计算通过所述第一照明光中的每一个形成在第一成像平面上的所述控制特征的第一光学图像; 以及基于所述第一光学图像的光学特性来确定所述光的照明形状和偏振状态分布。

73. 发明申请

US20050188341A1 Mask data correction method, photomask manufacturing method, computer program, optical image prediction method, resist pattern shape prediction method, and semiconductor device manufacturing method 失效
标题翻译：掩模数据校正方法，光掩模制造方法，计算机程序，光学图像预测方法，抗蚀剂图案形状预测方法和半导体器件制造方法
公开(公告)号：US20050188341A1
公开(公告)日：2005-08-25
申请号：US11062437
申请日：2005-02-23
申请人： Kazuya Fukuhara , Daisuke Kawamura , Shoji Mimotogi
发明人： Kazuya Fukuhara , Daisuke Kawamura , Shoji Mimotogi
IPC分类号： G03F1/32 , G03F1/36 , G03F1/68 , G03F1/70 , G03F1/72 , G03F7/00 , G03F7/20 , G06F17/50 , H01L21/00 , H01L21/027
CPC分类号： G03F7/705 , G03F1/36 , G03F1/70 , G03F7/70133 , G03F7/70433
摘要： According to an aspect of the invention, there is provided a mask data correction method used when forming a photomask used in a photolithography process, comprising correcting mask data on the basis of simulation performed by using information including nonuniformity of an illumination luminance distribution in an exposure apparatus which uses the photomask formed by using the mask data obtained by the correction result.
摘要翻译：根据本发明的一个方面，提供了一种掩模数据校正方法，该方法在形成光刻工艺中使用的光掩模时使用，包括：基于通过使用包括曝光中的照度亮度分布的不均匀性的信息进行的模拟来校正掩模数据使用通过使用通过校正结果获得的掩模数据形成的光掩模的装置。

74. 发明申请

US20130217155A1 PATTERN FORMING METHOD, PATTERN FORMING APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：图案形成方法，图案形成装置及制造半导体装置的方法
公开(公告)号：US20130217155A1
公开(公告)日：2013-08-22
申请号：US13607504
申请日：2012-09-07
申请人： Kazuya Fukuhara , Masayuki Hatano
发明人： Kazuya Fukuhara , Masayuki Hatano
IPC分类号： B05D3/00 , H01L21/31 , C23C16/52
CPC分类号： B29C43/021 , B29C2043/025 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/565 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a pattern forming method using a template containing a pattern that has at least one recess section or protrusion section to transfer the shape of the pattern to a resin layer on a substrate, is provided. The method includes a process for coating the resin on the substrate, a process for making the hardness of the first portion as a portion of the resin higher than the hardness of the second portion as the portion other than the first portion, and a process in which the portion other than the pattern of the template makes contact with the first portion, in a state where a gap is maintained between the template and the resin, the shape of the pattern is transferred to the second portion, and the resin is cured. Embodiments of an apparatus for pattern forming are also provided.
摘要翻译：根据一个实施例，提供一种使用包含具有至少一个凹部或突起部的图案的模板的图案形成方法，以将图案的形状转印到基板上的树脂层。该方法包括在基板上涂布树脂的方法，使作为树脂部分的第一部分的硬度高于作为第一部分以外的部分的第二部分的硬度的方法，以及在模板和树脂之间保持间隙的状态下，模板图案之外的部分与第一部分接触的部分，图案的形状被转印到第二部分，树脂固化。还提供了用于图案形成的装置的实施例。

75. 发明授权

US08407628B2 Photomask manufacturing method and semiconductor device manufacturing method 有权
公开(公告)号：US08407628B2
公开(公告)日：2013-03-26
申请号：US12770062
申请日：2010-04-29
申请人： Masamitsu Itoh , Takashi Hirano , Kazuya Fukuhara
发明人： Masamitsu Itoh , Takashi Hirano , Kazuya Fukuhara
IPC分类号： G06F17/50 , G03F1/00
CPC分类号： G06F17/5081 , G03F1/50
摘要： This invention discloses a photomask manufacturing method. A pattern dimensional map is generated by preparing a photomask in which a mask pattern is formed on a transparent substrate, and measuring a mask in-plane distribution of the pattern dimensions. A transmittance correction coefficient map is generated by dividing a pattern formation region into a plurality of subregions, and determining a transmittance correction coefficient for each of the plurality of subregions. The transmittance correction value of each subregion is calculated on the basis of the pattern dimensional map and the transmittance correction coefficient map. The transmittance of the transparent substrate corresponding to each subregion is changed on the basis of the transmittance correction value.

76. 发明申请

US20120328992A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20120328992A1
公开(公告)日：2012-12-27
申请号：US13606834
申请日：2012-09-07
申请人： Kazuya Fukuhara , Takaki Hashimoto , Kazuyuki Masukawa , Yasunobu Kai
发明人： Kazuya Fukuhara , Takaki Hashimoto , Kazuyuki Masukawa , Yasunobu Kai
IPC分类号： G03F7/20
CPC分类号： G03F1/00 , G03F1/36 , G03F7/70433
摘要： A semiconductor device manufacturing method includes applying illumination light to a photomask, and projecting diffracted light components from the photomask via a projection optical system to form a photoresist pattern on a substrate. The photomask includes a plurality of opening patterns which are arranged on each of a plurality of parallel lines at regular second intervals in a second direction and which have regular first intervals in a first direction perpendicular to the second direction. The plurality of opening patterns arranged on the adjacent ones of the plurality of parallel lines are displaced from each other half the second interval in the second direction. Moreover, the dimensions of the plurality of opening patterns and the complex amplitude transmittance of nontransparent region in the photomask are set so that three of the diffracted light components passing through the pupil of the projection optical system have equal amplitude.
摘要翻译：一种半导体器件制造方法，包括将照明光施加到光掩模，以及经由投影光学系统从光掩模投射衍射光成分，以在基板上形成光刻胶图案。光掩模包括多个开口图案，其以在第二方向上的规则的第二间隔布置在多条平行线中的每一条上，并且在垂直于第二方向的第一方向上具有规则的第一间隔。布置在多条平行线上相邻的多个平行线上的多个开口图案在第二方向上相互偏移第二间隔的一半。此外，设置多个开口图案的尺寸和光掩模中的非透明区域的复振幅透射率，使得穿过投影光学系统的光瞳的三个衍射光分量具有相等的幅度。

77. 发明授权

US08294889B2 Method for inspecting nano-imprint template 有权
标题翻译：检测纳米印迹模板的方法
公开(公告)号：US08294889B2
公开(公告)日：2012-10-23
申请号：US12776003
申请日：2010-05-07
申请人： Hiroyuki Kashiwagi , Kazuya Fukuhara
发明人： Hiroyuki Kashiwagi , Kazuya Fukuhara
IPC分类号： G01N21/01
CPC分类号： G01N21/956 , B82Y20/00 , G01N2021/4707 , G01N2021/95615
摘要： A method for inspecting a nano-imprint template, includes irradiating light onto a template for nano-imprinting from a back surface side of the template, the template having a front surface where a pattern is formed, detecting near-field light which is generated near the front surface of the template by the irradiation of the light, and performing an inspection of the template on the basis of the detected near-field light.
摘要翻译：一种用于检查纳米压印模板的方法，包括将光从模板的背面侧照射到用于纳米压印的模板上，模板具有形成图案的正面，检测近场产生的近场光通过照射光的模板的前表面，并且基于检测到的近场光执行模板的检查。

78. 发明授权

US07925090B2 Method of determining photo mask, method of manufacturing semiconductor device, and computer program product 失效
标题翻译：确定光掩模的方法，制造半导体器件的方法以及计算机程序产品
公开(公告)号：US07925090B2
公开(公告)日：2011-04-12
申请号：US11601797
申请日：2006-11-20
申请人： Toshiya Kotani , Kazuya Fukuhara , Kyoko Izuha
发明人： Toshiya Kotani , Kazuya Fukuhara , Kyoko Izuha
IPC分类号： G06K9/34
CPC分类号： G03F7/70441
摘要： A method of determining a photo mask, includes specifying a mask pattern for a photo mask for a first exposure apparatus, specifying a plurality of exposure conditions allowed to be set for a second exposure apparatus, predicting a projection image of the mask pattern to be projected on a substrate by the second exposure apparatus, for each of the exposure conditions, predicting a processed pattern to be formed on a substrate surface on the basis of the projection image, for each of the exposure conditions, determining whether or not the processed pattern meets a predetermined condition for each of the exposure conditions, and determining that the photo mask is applicable to the second exposure apparatus if the processed pattern meets the predetermined condition for at least one of the exposure conditions.
摘要翻译：一种确定光掩模的方法包括：为第一曝光装置指定用于光掩模的掩模图案，指定允许为第二曝光装置设置的多个曝光条件，预测要投影的掩模图案的投影图像在第二曝光装置的基板上，对于每个曝光条件，对于每个曝光条件，基于投影图像预测要在基板表面上形成的处理图案，确定处理图案是否满足对于每个曝光条件的预定条件，并且如果处理的图案满足至少一个曝光条件的预定条件，则确定光掩模适用于第二曝光装置。

79. 发明授权

US07740994B2 Method for selecting photomask substrate, method for manufacturing photomask, and method for manufacturing semiconductor device 失效
标题翻译：光掩模基板的选择方法，光掩模的制造方法以及半导体装置的制造方法
公开(公告)号：US07740994B2
公开(公告)日：2010-06-22
申请号：US11585130
申请日：2006-10-24
申请人： Kazuya Fukuhara , Masamitsu Itoh
发明人： Kazuya Fukuhara , Masamitsu Itoh
IPC分类号： G03F1/00
CPC分类号： G03F1/84 , G03F1/44
摘要： According to an aspect of the invention, there is provided a method for selecting a photomask substrate, including dividing a chip area scheduled to be arranged on the photomask substrate regarding a specific transfer pattern layer into a management pattern area in which an element pattern changed in shape by birefringence of the photomask substrate is arranged, and an area other than the management pattern area, setting a standard value of a size of birefringence of an area in which the management pattern area of the photomask substrate is arranged, inspecting the size of the birefringence of each of a plurality of photomask substrate candidates, and selecting a photomask substrate, in which the size of the birefringence satisfies the standard value, as a photomask substrate of the specific transfer pattern layer from the plurality of photomask substrate candidates.
摘要翻译：根据本发明的一个方面，提供了一种用于选择光掩模衬底的方法，包括将针对特定传输图案层布置在光掩模衬底上的芯片区域划分成其中元件图案改变的管理图案区域布置光掩模基板的双折射形状，并且设置管理图案区域以外的区域，设置布置有光掩模基板的管理图案区域的区域的双折射尺寸的标准值，检查多个光掩模衬底候选中的每一个的双折射，并且从多个光掩模衬底候选中选择其中双折射的尺寸满足标准值的光掩模衬底作为特定转移图案层的光掩模衬底。

80. 发明申请

US20100144148A1 METHOD FOR MANUFACTURE OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件制造方法
公开(公告)号：US20100144148A1
公开(公告)日：2010-06-10
申请号：US12613213
申请日：2009-11-05
申请人： Kazuya Fukuhara , Satoshi Nagai
发明人： Kazuya Fukuhara , Satoshi Nagai
IPC分类号： H01L21/308 , G06F17/50
CPC分类号： G03F7/70608
摘要： A semiconductor device manufacturing method includes designing a resist structure including a film having antireflection function for exposure light and a resist on the film to be formed on a substrate, designing an exposure condition of the resist obtained by exposing and developing the resist such that a resist pattern is finished as designed, obtaining criteria value for estimating influence of a resist pattern upon a dimension or shape of a device pattern, the resist pattern being obtained by exposing the resist under the designed exposure condition and developing the exposed resist, the device pattern being obtained by etching the resist structure using the resist pattern as a mask, determining whether the designed exposure condition is acceptable or not based on the criteria value, and redesigning the exposure condition of the resist without changing the designed resist structure when the designed exposure condition is determined not acceptable.
摘要翻译：半导体器件制造方法包括设计包括具有用于曝光光的抗反射功能的膜的抗蚀剂结构和在要形成在衬底上的膜上的抗蚀剂，设计通过曝光和显影抗蚀剂获得的抗蚀剂的曝光条件，使得抗蚀剂图案按照设计完成，获得用于估计抗蚀剂图案对器件图案的尺寸或形状的影响的标准值，抗蚀剂图案通过在设计的曝光条件下曝光抗蚀剂并显影曝光的抗蚀剂获得，器件图案为通过使用抗蚀剂图案作为掩模蚀刻抗蚀剂结构而获得，基于标准值确定设计的曝光条件是否可接受，并且当设计的曝光条件为设计的曝光条件是否改变设计的抗蚀剂结构时，重新设计抗蚀剂的曝光条件决定不接受。

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