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1. 发明申请

US20090220894A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20090220894A1
公开(公告)日：2009-09-03
申请号：US12390157
申请日：2009-02-20
申请人： Kazuya FUKUHARA , Takaki HASHIMOTO , Kazuyuki MASUKAWA , Yasunobu KAI
发明人： Kazuya FUKUHARA , Takaki HASHIMOTO , Kazuyuki MASUKAWA , Yasunobu KAI
IPC分类号： G03F7/20
CPC分类号： G03F1/00 , G03F1/36 , G03F7/70433
摘要： A semiconductor device manufacturing method includes applying illumination light to a photomask, and projecting diffracted light components from the photomask via a projection optical system to form a photoresist pattern on a substrate. The photomask includes a plurality of opening patterns which are arranged on each of a plurality of parallel lines at regular second intervals in a second direction and which have regular first intervals in a first direction perpendicular to the second direction. The plurality of opening patterns arranged on the adjacent ones of the plurality of parallel lines are displaced from each other half the second interval in the second direction. Moreover, the dimensions of the plurality of opening patterns and the complex amplitude transmittance of nontransparent region in the photomask are set so that three of the diffracted light components passing through the pupil of the projection optical system have equal amplitude.
摘要翻译：一种半导体器件制造方法，包括将照明光施加到光掩模，以及经由投影光学系统从光掩模投射衍射光成分，以在基板上形成光刻胶图案。光掩模包括多个开口图案，其以在第二方向上的规则的第二间隔布置在多条平行线中的每一条上，并且在垂直于第二方向的第一方向上具有规则的第一间隔。布置在多条平行线上相邻的多个平行线上的多个开口图案在第二方向上相互偏移第二间隔的一半。此外，设置光掩模中的多个开口图案的尺寸和非透明区域的复振幅透射率，使得通过投影光学系统的光瞳的三个衍射光分量具有相等的幅度。

2. 发明授权

US08865589B2 Semiconductor device and manufacturing method of semiconductor device 有权
标题翻译：半导体器件及半导体器件的制造方法
公开(公告)号：US08865589B2
公开(公告)日：2014-10-21
申请号：US13614217
申请日：2012-09-13
申请人： Takaki Hashimoto , Yasunobu Kai , Toshiya Kotani
发明人： Takaki Hashimoto , Yasunobu Kai , Toshiya Kotani
IPC分类号： H01L21/027 , H01L21/768 , H01L21/311 , H01L23/528 , H01L21/033 , H01L27/115
CPC分类号： H01L23/528 , H01L21/0337 , H01L21/31144 , H01L21/768 , H01L21/76804 , H01L21/76816 , H01L21/76895 , H01L27/11519 , H01L2924/0002 , Y10S438/947 , H01L2924/00
摘要： According to one embodiment, a semiconductor device includes a plurality of wires arranged in parallel at a predetermined pitch, a plurality at first contacts that are each connected to an odd-numbered wire among the wires and are arranged in parallel in an orthogonal direction with respect to a wiring direction of the wires, and a plurality of second contacts that are each connected to an even-numbered wire among the wires and are arranged in parallel in an orthogonal direction with respect to the wiring direction of the wires in such a way as to be offset from the first contacts in the wiring direction of the wires, in which the first contacts are offset from the second contacts by a pitch of the wires in an orthogonal direction with respect to the wiring direction of the wires.
摘要翻译：根据一个实施例，半导体器件包括以预定间距平行布置的多条导线，多个第一触点分别连接到导线之间的奇数编号，并且与正交方向平行布置，与与导线的布线方向相连接的多个第二触点，以及多个第二触点，每个第二触点各自连接到电线中的偶数线，并且相对于线的布线方向在正交方向上平行布置，在与导线的布线方向正交的方向上的第一触点相对于第二触点偏离线的间距的方式偏离布线方向的第一触点。

3. 发明授权

US08293456B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US08293456B2
公开(公告)日：2012-10-23
申请号：US12390157
申请日：2009-02-20
申请人： Kazuya Fukuhara , Takaki Hashimoto , Kazuyuki Masukawa , Yasunobu Kai
发明人： Kazuya Fukuhara , Takaki Hashimoto , Kazuyuki Masukawa , Yasunobu Kai
IPC分类号： G03F1/00
CPC分类号： G03F1/00 , G03F1/36 , G03F7/70433
摘要： A semiconductor device manufacturing method includes applying illumination light to a photomask, and projecting diffracted light components from the photomask via a projection optical system to form a photoresist pattern on a substrate. The photomask includes a plurality of opening patterns which are arranged on each of a plurality of parallel lines at regular second intervals in a second direction and which have regular first intervals in a first direction perpendicular to the second direction. The plurality of opening patterns arranged on the adjacent ones of the plurality of parallel lines are displaced from each other half the second interval in the second direction. Moreover, the dimensions of the plurality of opening patterns and the complex amplitude transmittance of nontransparent region in the photomask are set so that three of the diffracted light components passing through the pupil of the projection optical system have equal amplitude.
摘要翻译：一种半导体器件制造方法，包括将照明光施加到光掩模，以及经由投影光学系统从光掩模投射衍射光成分，以在基板上形成光刻胶图案。光掩模包括多个开口图案，其以在第二方向上的规则的第二间隔布置在多条平行线中的每一条上，并且在垂直于第二方向的第一方向上具有规则的第一间隔。布置在多条平行线上相邻的多个平行线上的多个开口图案在第二方向上相互偏移第二间隔的一半。此外，设置多个开口图案的尺寸和光掩模中的非透明区域的复振幅透射率，使得穿过投影光学系统的光瞳的三个衍射光分量具有相等的幅度。

4. 发明申请

US20100202181A1 SEMICONDUCTOR MEMORY DEVICE 审中-公开
标题翻译：半导体存储器件
公开(公告)号：US20100202181A1
公开(公告)日：2010-08-12
申请号：US12561531
申请日：2009-09-17
申请人： Takaki HASHIMOTO , Hidefumi Mukai , Yasunobu Kai , Toshiya Kotani
发明人： Takaki HASHIMOTO , Hidefumi Mukai , Yasunobu Kai , Toshiya Kotani
IPC分类号： G11C5/06
CPC分类号： G11C5/063 , G11C5/025
摘要： A semiconductor memory device includes a semiconductor substrate on which memory cells are formed. Interconnects are arranged along a first direction above the semiconductor substrate, and have regular intervals along a second direction perpendicular to the first direction. Interconnect contacts connect the interconnects and the semiconductor substrate, are arranged on three or more rows. The center of each of two of the interconnect contacts which are connected to the interconnects adjacent in the second direction deviate from each other along the first direction.
摘要翻译：半导体存储器件包括形成有存储单元的半导体衬底。互连件沿着半导体衬底上方的第一方向布置，并且沿着垂直于第一方向的第二方向具有规则的间隔。互连触点连接互连和半导体衬底，布置在三行或更多行上。连接到在第二方向相邻的互连件的两个互连触点中的每一个的中心沿着第一方向彼此偏离。

5. 发明授权

US08679731B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US08679731B2
公开(公告)日：2014-03-25
申请号：US13606834
申请日：2012-09-07
申请人： Kazuya Fukuhara , Takaki Hashimoto , Kazuyuki Masukawa , Yasunobu Kai
发明人： Kazuya Fukuhara , Takaki Hashimoto , Kazuyuki Masukawa , Yasunobu Kai
IPC分类号： G03F7/20
CPC分类号： G03F1/00 , G03F1/36 , G03F7/70433
摘要： A semiconductor device manufacturing method includes applying illumination light to a photomask, and projecting diffracted light components from the photomask via a projection optical system to form a photoresist pattern on a substrate. The photomask includes a plurality of opening patterns which are arranged on each of a plurality of parallel lines at regular second intervals in a second direction and which have regular first intervals in a first direction perpendicular to the second direction. The plurality of opening patterns arranged on the adjacent ones of the plurality of parallel lines are displaced from each other half the second interval in the second direction. Moreover, the dimensions of the plurality of opening patterns and the complex amplitude transmittance of nontransparent region in the photomask are set so that three of the diffracted light components passing through the pupil of the projection optical system have equal amplitude.
摘要翻译：一种半导体器件制造方法，包括将照明光施加到光掩模，以及经由投影光学系统从光掩模投射衍射光成分，以在基板上形成光刻胶图案。光掩模包括多个开口图案，其以在第二方向上的规则的第二间隔布置在多条平行线中的每一条上，并且在垂直于第二方向的第一方向上具有规则的第一间隔。布置在多条平行线上相邻的多个平行线上的多个开口图案在第二方向上相互偏移第二间隔的一半。此外，设置多个开口图案的尺寸和光掩模中的非透明区域的复振幅透射率，使得穿过投影光学系统的光瞳的三个衍射光分量具有相等的幅度。

6. 发明申请

US20130241073A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的半导体器件和制造方法
公开(公告)号：US20130241073A1
公开(公告)日：2013-09-19
申请号：US13614217
申请日：2012-09-13
申请人： Takaki Hashimoto , Yasunobu Kai , Toshiya Kotani
发明人： Takaki Hashimoto , Yasunobu Kai , Toshiya Kotani
IPC分类号： H01L23/528 , H01L21/768
CPC分类号： H01L23/528 , H01L21/0337 , H01L21/31144 , H01L21/768 , H01L21/76804 , H01L21/76816 , H01L21/76895 , H01L27/11519 , H01L2924/0002 , Y10S438/947 , H01L2924/00
摘要： According to one embodiment, a semiconductor device includes a plurality of wires arranged in parallel at a predetermined pitch, a plurality at first contacts that are each connected to an odd-numbered wire among the wires and are arranged in parallel in an orthogonal direction with respect to a wiring direction of the wires, and a plurality of second contacts that are each connected to an even-numbered wire among the wires and are arranged in parallel in an orthogonal direction with respect to the wiring direction of the wires in such a way as to be offset from the first contacts in the wiring direction of the wires, in which the first contacts are offset from the second contacts by a pitch of the wires in an orthogonal direction with respect to the wiring direction of the wires.
摘要翻译：根据一个实施例，半导体器件包括以预定间距平行布置的多条导线，多个第一触点分别连接到导线之间的奇数编号，并且与正交方向平行布置，与与导线的布线方向相连接的多个第二触点，以及多个第二触点，每个第二触点各自连接到电线中的偶数线，并且相对于线的布线方向在正交方向上平行布置，在与导线的布线方向正交的方向上的第一触点相对于第二触点偏离线的间距的方式偏离布线方向的第一触点。

7. 发明申请

US20120070985A1 EXPOSURE METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：曝光方法和制造半导体器件的方法
公开(公告)号：US20120070985A1
公开(公告)日：2012-03-22
申请号：US13233971
申请日：2011-09-15
申请人： Takaki Hashimoto , Kazuya Fukuhara , Toshiya Kotani , Yasunobu Kai
发明人： Takaki Hashimoto , Kazuya Fukuhara , Toshiya Kotani , Yasunobu Kai
IPC分类号： H01L21/768 , G03B27/32
CPC分类号： H01L27/0207 , G03F1/50 , G03F7/70325 , H01L21/0274 , H01L21/31144 , H01L27/11519 , H01L27/11524
摘要： According to one embodiment, an exposure method is disclosed. The method can include applying light to a photomask by an illumination. The method can include converging diffracted beams emitted from the photomask by a lens. In addition, the method can include imaging a plurality of point images on an exposure surface. On the photomask, a light transmitting region is formed at a lattice point represented by nonorthogonal unit cell vectors, and in the illumination, a light emitting region is set so that three or more of the diffracted beams pass through positions equidistant from center of a pupil of the lens.
摘要翻译：根据一个实施例，公开了曝光方法。该方法可以包括通过照明将光照射到光掩模。该方法可以包括通过透镜会聚从光掩模发射的衍射光束。此外，该方法可以包括在曝光表面上成像多个点图像。在光掩模上，在由非正交单元矢量表示的格点处形成光透射区域，在照明中，设定发光区域，使得三个以上的衍射光束通过与瞳孔中心等距的位置的镜头。

8. 发明申请

US20110049601A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110049601A1
公开(公告)日：2011-03-03
申请号：US12871271
申请日：2010-08-30
申请人： Yasunobu Kai , Takaki Hashimoto
发明人： Yasunobu Kai , Takaki Hashimoto
IPC分类号： H01L27/115 , H01L21/336 , H01L21/8247
CPC分类号： H01L27/0207 , H01L21/31144 , H01L21/76816 , H01L27/11521 , H01L27/11524
摘要： According to one embodiment, a semiconductor device includes a substrate, conductive members, an interlayer insulating film, and a plurality of contacts. The conductive members are provided in an upper portion of the substrate or above the substrate to extend in one direction. The interlayer insulating film is provided on the substrate and the conductive members. The plurality of contacts is provided in the interlayer insulating film. In a first region on the substrate, the contacts are located at some of lattice points of an imaginary first lattice. In a second region on the substrate, the contacts are located at some of lattice points of an imaginary second lattice. The second lattice is different from the first lattice. Each of the first lattice and the second lattice includes some of the lattice points located on the conductive members or on an extension region extended in the one direction of the conductive members. A position of each of the lattice points located on the conductive members and the extension region in the one direction is periodically displaced based on every n consecutively-arranged conductive members (n is a natural number).
摘要翻译：根据一个实施例，半导体器件包括衬底，导电构件，层间绝缘膜和多个触点。导电构件设置在基板的上部或基板上方，以在一个方向上延伸。层间绝缘膜设置在基板和导电构件上。多个触点设置在层间绝缘膜中。在基板上的第一区域中，触点位于虚构的第一格子的某个格点。在衬底上的第二区域中，触点位于虚构的第二晶格的一些晶格点处。第二格子与第一格子不同。第一晶格和第二晶格中的每一个包括位于导电构件上或在导电构件的一个方向上延伸的延伸区域上的一些晶格点。基于每n个连续排列的导电构件（n是自然数），位于导电构件上的每个晶格点和沿一个方向的延伸区域的位置周期性地移位。

9. 发明申请

US20120225374A1 PHOTOMASK AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：照相机及其制造方法
公开(公告)号：US20120225374A1
公开(公告)日：2012-09-06
申请号：US13409638
申请日：2012-03-01
申请人： Kentaro OKUDA , Yosuke Okamoto , Takaki Hashimoto , Hidenori Sato
发明人： Kentaro OKUDA , Yosuke Okamoto , Takaki Hashimoto , Hidenori Sato
IPC分类号： G03F1/44
CPC分类号： G03F1/42 , G03F1/26 , G03F1/44
摘要： According to one embodiment, a photomask includes a substrate, a film portion, a pattern, and a plurality of detection marks. The film portion is provided on a surface of the substrate. The film portion has a light transmittance lower than light transmittance of the substrate. The pattern is provided in a surface of the film portion. The pattern is configured to be transferred to a transfer target. The plurality of detection marks is provided in the film portion, with intensity of light transmitted through the detection marks being suppressed so as to suppress transfer the detection marks to the transfer target.
摘要翻译：根据一个实施例，光掩模包括基板，膜部分，图案和多个检测标记。膜部设置在基板的表面上。膜部的透光率比基板的透光率低。该图案设置在膜部分的表面中。该模式被配置为传送到转移目标。多个检测标记设置在胶片部分中，通过检测标记传输的光的强度被抑制，以便抑制检测标记传送到转印目标。

10. 发明授权

US08778570B2 Photomask and method for manufacturing the same 有权
标题翻译：光掩模及其制造方法
公开(公告)号：US08778570B2
公开(公告)日：2014-07-15
申请号：US13409638
申请日：2012-03-01
申请人： Kentaro Okuda , Yosuke Okamoto , Takaki Hashimoto , Hidenori Sato
发明人： Kentaro Okuda , Yosuke Okamoto , Takaki Hashimoto , Hidenori Sato
IPC分类号： G03F1/42 , G03F1/44
CPC分类号： G03F1/42 , G03F1/26 , G03F1/44
摘要： According to one embodiment, a photomask includes a substrate, a film portion, a pattern, and a plurality of detection marks. The film portion is provided on a surface of the substrate. The film portion has a light transmittance lower than light transmittance of the substrate. The pattern is provided in a surface of the film portion. The pattern is configured to be transferred to a transfer target. The plurality of detection marks is provided in the film portion, with intensity of light transmitted through the detection marks being suppressed so as to suppress transfer the detection marks to the transfer target.
摘要翻译：根据一个实施例，光掩模包括基板，膜部分，图案和多个检测标记。膜部设置在基板的表面上。膜部的透光率比基板的透光率低。该图案设置在膜部分的表面中。该模式被配置为传送到转移目标。多个检测标记设置在胶片部分中，通过检测标记传输的光的强度被抑制，以便抑制检测标记传送到转印目标。

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