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1. 发明授权

US08293456B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US08293456B2
公开(公告)日：2012-10-23
申请号：US12390157
申请日：2009-02-20
申请人： Kazuya Fukuhara , Takaki Hashimoto , Kazuyuki Masukawa , Yasunobu Kai
发明人： Kazuya Fukuhara , Takaki Hashimoto , Kazuyuki Masukawa , Yasunobu Kai
IPC分类号： G03F1/00
CPC分类号： G03F1/00 , G03F1/36 , G03F7/70433
摘要： A semiconductor device manufacturing method includes applying illumination light to a photomask, and projecting diffracted light components from the photomask via a projection optical system to form a photoresist pattern on a substrate. The photomask includes a plurality of opening patterns which are arranged on each of a plurality of parallel lines at regular second intervals in a second direction and which have regular first intervals in a first direction perpendicular to the second direction. The plurality of opening patterns arranged on the adjacent ones of the plurality of parallel lines are displaced from each other half the second interval in the second direction. Moreover, the dimensions of the plurality of opening patterns and the complex amplitude transmittance of nontransparent region in the photomask are set so that three of the diffracted light components passing through the pupil of the projection optical system have equal amplitude.
摘要翻译：一种半导体器件制造方法，包括将照明光施加到光掩模，以及经由投影光学系统从光掩模投射衍射光成分，以在基板上形成光刻胶图案。光掩模包括多个开口图案，其以在第二方向上的规则的第二间隔布置在多条平行线中的每一条上，并且在垂直于第二方向的第一方向上具有规则的第一间隔。布置在多条平行线上相邻的多个平行线上的多个开口图案在第二方向上相互偏移第二间隔的一半。此外，设置多个开口图案的尺寸和光掩模中的非透明区域的复振幅透射率，使得穿过投影光学系统的光瞳的三个衍射光分量具有相等的幅度。

2. 发明授权

US08679731B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US08679731B2
公开(公告)日：2014-03-25
申请号：US13606834
申请日：2012-09-07
申请人： Kazuya Fukuhara , Takaki Hashimoto , Kazuyuki Masukawa , Yasunobu Kai
发明人： Kazuya Fukuhara , Takaki Hashimoto , Kazuyuki Masukawa , Yasunobu Kai
IPC分类号： G03F7/20
CPC分类号： G03F1/00 , G03F1/36 , G03F7/70433
摘要： A semiconductor device manufacturing method includes applying illumination light to a photomask, and projecting diffracted light components from the photomask via a projection optical system to form a photoresist pattern on a substrate. The photomask includes a plurality of opening patterns which are arranged on each of a plurality of parallel lines at regular second intervals in a second direction and which have regular first intervals in a first direction perpendicular to the second direction. The plurality of opening patterns arranged on the adjacent ones of the plurality of parallel lines are displaced from each other half the second interval in the second direction. Moreover, the dimensions of the plurality of opening patterns and the complex amplitude transmittance of nontransparent region in the photomask are set so that three of the diffracted light components passing through the pupil of the projection optical system have equal amplitude.
摘要翻译：一种半导体器件制造方法，包括将照明光施加到光掩模，以及经由投影光学系统从光掩模投射衍射光成分，以在基板上形成光刻胶图案。光掩模包括多个开口图案，其以在第二方向上的规则的第二间隔布置在多条平行线中的每一条上，并且在垂直于第二方向的第一方向上具有规则的第一间隔。布置在多条平行线上相邻的多个平行线上的多个开口图案在第二方向上相互偏移第二间隔的一半。此外，设置多个开口图案的尺寸和光掩模中的非透明区域的复振幅透射率，使得穿过投影光学系统的光瞳的三个衍射光分量具有相等的幅度。

3. 发明申请

US20120328992A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20120328992A1
公开(公告)日：2012-12-27
申请号：US13606834
申请日：2012-09-07
申请人： Kazuya Fukuhara , Takaki Hashimoto , Kazuyuki Masukawa , Yasunobu Kai
发明人： Kazuya Fukuhara , Takaki Hashimoto , Kazuyuki Masukawa , Yasunobu Kai
IPC分类号： G03F7/20
CPC分类号： G03F1/00 , G03F1/36 , G03F7/70433
摘要： A semiconductor device manufacturing method includes applying illumination light to a photomask, and projecting diffracted light components from the photomask via a projection optical system to form a photoresist pattern on a substrate. The photomask includes a plurality of opening patterns which are arranged on each of a plurality of parallel lines at regular second intervals in a second direction and which have regular first intervals in a first direction perpendicular to the second direction. The plurality of opening patterns arranged on the adjacent ones of the plurality of parallel lines are displaced from each other half the second interval in the second direction. Moreover, the dimensions of the plurality of opening patterns and the complex amplitude transmittance of nontransparent region in the photomask are set so that three of the diffracted light components passing through the pupil of the projection optical system have equal amplitude.
摘要翻译：一种半导体器件制造方法，包括将照明光施加到光掩模，以及经由投影光学系统从光掩模投射衍射光成分，以在基板上形成光刻胶图案。光掩模包括多个开口图案，其以在第二方向上的规则的第二间隔布置在多条平行线中的每一条上，并且在垂直于第二方向的第一方向上具有规则的第一间隔。布置在多条平行线上相邻的多个平行线上的多个开口图案在第二方向上相互偏移第二间隔的一半。此外，设置多个开口图案的尺寸和光掩模中的非透明区域的复振幅透射率，使得穿过投影光学系统的光瞳的三个衍射光分量具有相等的幅度。

4. 发明申请

US20120070985A1 EXPOSURE METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：曝光方法和制造半导体器件的方法
公开(公告)号：US20120070985A1
公开(公告)日：2012-03-22
申请号：US13233971
申请日：2011-09-15
申请人： Takaki Hashimoto , Kazuya Fukuhara , Toshiya Kotani , Yasunobu Kai
发明人： Takaki Hashimoto , Kazuya Fukuhara , Toshiya Kotani , Yasunobu Kai
IPC分类号： H01L21/768 , G03B27/32
CPC分类号： H01L27/0207 , G03F1/50 , G03F7/70325 , H01L21/0274 , H01L21/31144 , H01L27/11519 , H01L27/11524
摘要： According to one embodiment, an exposure method is disclosed. The method can include applying light to a photomask by an illumination. The method can include converging diffracted beams emitted from the photomask by a lens. In addition, the method can include imaging a plurality of point images on an exposure surface. On the photomask, a light transmitting region is formed at a lattice point represented by nonorthogonal unit cell vectors, and in the illumination, a light emitting region is set so that three or more of the diffracted beams pass through positions equidistant from center of a pupil of the lens.
摘要翻译：根据一个实施例，公开了曝光方法。该方法可以包括通过照明将光照射到光掩模。该方法可以包括通过透镜会聚从光掩模发射的衍射光束。此外，该方法可以包括在曝光表面上成像多个点图像。在光掩模上，在由非正交单元矢量表示的格点处形成光透射区域，在照明中，设定发光区域，使得三个以上的衍射光束通过与瞳孔中心等距的位置的镜头。

5. 发明申请

US20080063988A1 Exposure method and method for manufacturing semiconductor device 有权
标题翻译：半导体器件制造方法及曝光方法
公开(公告)号：US20080063988A1
公开(公告)日：2008-03-13
申请号：US11896871
申请日：2007-09-06
申请人： Kazuya Fukuhara , Kenji Kawano , Kazuyuki Masukawa
发明人： Kazuya Fukuhara , Kenji Kawano , Kazuyuki Masukawa
IPC分类号： G03F7/213
CPC分类号： G03F7/213 , G03F7/70125 , G03F7/70433
摘要： An exposure method includes preparing a photomask having first and second main openings by which corresponding patterns are to be formed in a photo resist and first and second assist openings by which no corresponding patterns are to be formed in the photo resist, preparing an illumination having first and second light emitting areas, and irradiating the photo resist with illumination light from the illumination via the photomask, the first light emitting area and the second light emitting area being symmetric with respect to a center of the illumination, the first light emitting area and the second light emitting area containing a first point and a second point, respectively, the first point and the second point being symmetric with respect to the center of the illumination, the first point and the second point being symmetric with respect to a straight line extending through the center of the illumination.
摘要翻译：曝光方法包括制备具有第一和第二主开口的光掩模，通过该光掩模在光致抗蚀剂中形成相应的图案，并且在光致抗蚀剂中不形成相应图案的第一和第二辅助开口，准备具有第一和第二发光区域，并且通过光掩模照射来自照射的照明光，第一发光区域和第二发光区域相对于照明的中心对称，第一发光区域和第二发光区域分别包含第一点和第二点，第一点和第二点相对于照明中心对称，第一点和第二点相对于延伸穿过的直线对称照明的中心。

6. 发明授权

US07517621B2 Exposure method and method for manufacturing semiconductor device 有权
标题翻译：半导体器件制造方法及曝光方法
公开(公告)号：US07517621B2
公开(公告)日：2009-04-14
申请号：US11896871
申请日：2007-09-06
申请人： Kazuya Fukuhara , Kenji Kawano , Kazuyuki Masukawa
发明人： Kazuya Fukuhara , Kenji Kawano , Kazuyuki Masukawa
IPC分类号： G03C5/00
CPC分类号： G03F7/213 , G03F7/70125 , G03F7/70433
摘要： An exposure method includes preparing a photomask having first and second main openings by which corresponding patterns are to be formed in a photo resist and first and second assist openings by which no corresponding patterns are to be formed in the photo resist, preparing an illumination having first and second light emitting areas, and irradiating the photo resist with illumination light from the illumination via the photomask, the first light emitting area and the second light emitting area being symmetric with respect to a center of the illumination, the first light emitting area and the second light emitting area containing a first point and a second point, respectively, the first point and the second point being symmetric with respect to the center of the illumination, the first point and the second point being symmetric with respect to a straight line extending through the center of the illumination.
摘要翻译：曝光方法包括制备具有第一和第二主开口的光掩模，通过该光掩模在光致抗蚀剂中形成相应的图案，并且在光致抗蚀剂中不形成相应图案的第一和第二辅助开口，准备具有第一和第二发光区域，并且通过光掩模照射来自照射的照明光，第一发光区域和第二发光区域相对于照明的中心对称，第一发光区域和第二发光区域分别包含第一点和第二点，第一点和第二点相对于照明中心对称，第一点和第二点相对于延伸穿过的直线对称照明的中心。

7. 发明授权

US08085393B2 Exposure apparatus inspection method and method for manufacturing semiconductor device 失效
标题翻译：曝光装置检查方法及制造半导体装置的方法
公开(公告)号：US08085393B2
公开(公告)日：2011-12-27
申请号：US12554782
申请日：2009-09-04
申请人： Kentaro Kasa , Takashi Sato , Kazuya Fukuhara
发明人： Kentaro Kasa , Takashi Sato , Kazuya Fukuhara
IPC分类号： G01N11/00
CPC分类号： G03F7/70641
摘要： A mask pattern includes a first pattern having a line-and-space pattern extending in a first direction, a second pattern formed as a line-and-space pattern having a larger period than the first pattern and extending in the first direction, a third pattern having a line-and-space pattern extending in a second direction, and a fourth pattern formed as a line-and-space pattern having a larger period than the third pattern and extending in the second direction. Illumination light is obliquely incident on the first pattern and the second pattern from a first oblique direction, illumination light is obliquely incident on the third pattern and the fourth pattern from a second oblique direction, and a relative distance from the first pattern to the second pattern transferred on to an image receptor and a relative distance from the third pattern to the fourth pattern transferred onto the image receptor are measured and an optical characteristic of an exposure apparatus is ascertained based on the relative distances.
摘要翻译：掩模图案包括具有沿第一方向延伸的线间距图案的第一图案，形成为具有比第一图案更长的周期并沿第一方向延伸的线间距图案的第二图案，第三图案图案具有沿第二方向延伸的线间距图案，以及形成为具有比第三图案更大的周期并沿第二方向延伸的线间距图案的第四图案。照明光从第一倾斜方向倾斜入射在第一图案和第二图案上，照明光从第二倾斜方向倾斜入射在第三图案和第四图案上，并且从第一图案到第二图案的相对距离转印到图像接收器上，并且测量从第三图案到转印到图像接收器上的第四图案的相对距离，并且基于相对距离确定曝光设备的光学特性。

8. 发明申请

US20110298116A1 SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110298116A1
公开(公告)日：2011-12-08
申请号：US13118401
申请日：2011-05-28
申请人： Shinya MIZUSAKI , Kazuya Fukuhara
发明人： Shinya MIZUSAKI , Kazuya Fukuhara
IPC分类号： H01L23/495 , H01L21/78
CPC分类号： H01L23/49541 , H01L21/561 , H01L21/565 , H01L21/6835 , H01L21/6836 , H01L23/3107 , H01L23/49503 , H01L23/49548 , H01L23/544 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/97 , H01L2221/68327 , H01L2223/54413 , H01L2223/54433 , H01L2223/54486 , H01L2224/05554 , H01L2224/27013 , H01L2224/32057 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2224/83001 , H01L2224/83385 , H01L2224/85001 , H01L2224/92247 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/181 , H01L2224/85 , H01L2224/83 , H01L2924/00012 , H01L2924/00 , H01L2224/05599
摘要： An object of the present invention is to improve the quality control of a semiconductor device. By forming an inscription comprising a culled or pixel skipping pattern of dimples on the upper surface of a die pad in a QFN, it is possible to confirm the inscription by X-ray inspection or the like even after individuation and specify a cavity of a resin molding die. Further, it is possible to specify the position of a device region in a lead frame. As a result, when a defect appears, it is possible to sort a defective QFN by appearance inspection and improve quality control in the assembly of a QFN.
摘要翻译：本发明的目的在于提高半导体器件的质量控制。通过在QFN中在芯片垫的上表面上形成包括凹陷的剔除或像素跳过图案的题字，即使在个体化之后也可以通过X射线检查等来确认题字，并指定树脂的空腔成型模具。此外，可以指定引线框架中的器件区域的位置。结果，当出现缺陷时，可以通过外观检查对有缺陷的QFN进行分类，并提高组装QFN的质量控制。

9. 发明申请

US20110177458A1 EXPOSURE DETERMINING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND COMPUTER PROGRAM PRODUCT 有权
标题翻译：曝光测定方法，制造半导体器件的方法和计算机程序产品
公开(公告)号：US20110177458A1
公开(公告)日：2011-07-21
申请号：US13007238
申请日：2011-01-14
申请人： Toshiya KOTANI , Kazuya Fukuhara , Michiya Takimoto , Hidefumi Mukai , Soichi Inoue
发明人： Toshiya KOTANI , Kazuya Fukuhara , Michiya Takimoto , Hidefumi Mukai , Soichi Inoue
IPC分类号： G03F7/20 , G06F17/50
CPC分类号： G03F7/70425 , G03F7/70558
摘要： According to one embodiment, a deviation amount distribution of a two-dimensional shape parameter between a mask pattern formed on a mask and a desired mask pattern is acquired as a mask pattern map. Such that a deviation amount of the two-dimensional shape parameter between a pattern on substrate formed when the mask is subjected to exposure shot to form a pattern on a substrate and a desired pattern on substrate fits within a predetermined range, an exposure is determined for each position in the exposure shot in forming the pattern on substrate based on the mask pattern map.
摘要翻译：根据一个实施例，获取形成在掩模上的掩模图案与期望的掩模图案之间的二维形状参数的偏差量分布作为掩模图案图。使得当在掩模经受曝光拍摄以形成基板上的图案和在基板上形成图案之后形成的基板上的图案之间的二维形状参数的偏移量适合在预定范围内时，确定曝光基于掩模图案图，在基板上形成图案的曝光中的每个位置。

10. 发明申请

US20100315643A1 METHOD FOR INSPECTING NANO-IMPRINT TEMPLATE 有权
标题翻译：检查纳米印模的方法
公开(公告)号：US20100315643A1
公开(公告)日：2010-12-16
申请号：US12776003
申请日：2010-05-07
申请人： Hiroyuki KASHIWAGI , Kazuya Fukuhara
发明人： Hiroyuki KASHIWAGI , Kazuya Fukuhara
IPC分类号： G01N21/00
CPC分类号： G01N21/956 , B82Y20/00 , G01N2021/4707 , G01N2021/95615
摘要： A method for inspecting a nano-imprint template, includes irradiating light onto a template for nano-imprinting from a back surface side of the template, the template having a front surface where a pattern is formed, detecting near-field light which is generated near the front surface of the template by the irradiation of the light, and performing an inspection of the template on the basis of the detected near-field light.
摘要翻译：一种用于检查纳米压印模板的方法，包括将光从模板的背面侧照射到用于纳米压印的模板上，模板具有形成图案的正面，检测近场产生的近场光通过照射光的模板的前表面，并且基于检测到的近场光执行模板的检查。

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