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1. 发明授权

US08407628B2 Photomask manufacturing method and semiconductor device manufacturing method 有权
公开(公告)号：US08407628B2
公开(公告)日：2013-03-26
申请号：US12770062
申请日：2010-04-29
申请人： Masamitsu Itoh , Takashi Hirano , Kazuya Fukuhara
发明人： Masamitsu Itoh , Takashi Hirano , Kazuya Fukuhara
IPC分类号： G06F17/50 , G03F1/00
CPC分类号： G06F17/5081 , G03F1/50
摘要： This invention discloses a photomask manufacturing method. A pattern dimensional map is generated by preparing a photomask in which a mask pattern is formed on a transparent substrate, and measuring a mask in-plane distribution of the pattern dimensions. A transmittance correction coefficient map is generated by dividing a pattern formation region into a plurality of subregions, and determining a transmittance correction coefficient for each of the plurality of subregions. The transmittance correction value of each subregion is calculated on the basis of the pattern dimensional map and the transmittance correction coefficient map. The transmittance of the transparent substrate corresponding to each subregion is changed on the basis of the transmittance correction value.

2. 发明授权

US07740994B2 Method for selecting photomask substrate, method for manufacturing photomask, and method for manufacturing semiconductor device 失效
标题翻译：光掩模基板的选择方法，光掩模的制造方法以及半导体装置的制造方法
公开(公告)号：US07740994B2
公开(公告)日：2010-06-22
申请号：US11585130
申请日：2006-10-24
申请人： Kazuya Fukuhara , Masamitsu Itoh
发明人： Kazuya Fukuhara , Masamitsu Itoh
IPC分类号： G03F1/00
CPC分类号： G03F1/84 , G03F1/44
摘要： According to an aspect of the invention, there is provided a method for selecting a photomask substrate, including dividing a chip area scheduled to be arranged on the photomask substrate regarding a specific transfer pattern layer into a management pattern area in which an element pattern changed in shape by birefringence of the photomask substrate is arranged, and an area other than the management pattern area, setting a standard value of a size of birefringence of an area in which the management pattern area of the photomask substrate is arranged, inspecting the size of the birefringence of each of a plurality of photomask substrate candidates, and selecting a photomask substrate, in which the size of the birefringence satisfies the standard value, as a photomask substrate of the specific transfer pattern layer from the plurality of photomask substrate candidates.
摘要翻译：根据本发明的一个方面，提供了一种用于选择光掩模衬底的方法，包括将针对特定传输图案层布置在光掩模衬底上的芯片区域划分成其中元件图案改变的管理图案区域布置光掩模基板的双折射形状，并且设置管理图案区域以外的区域，设置布置有光掩模基板的管理图案区域的区域的双折射尺寸的标准值，检查多个光掩模衬底候选中的每一个的双折射，并且从多个光掩模衬底候选中选择其中双折射的尺寸满足标准值的光掩模衬底作为特定转移图案层的光掩模衬底。

3. 发明申请

US20080124633A1 PHOTOMASK UNIT, EXPOSING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：光电单元，制造半导体器件的曝光方法和方法
公开(公告)号：US20080124633A1
公开(公告)日：2008-05-29
申请号：US11939030
申请日：2007-11-13
申请人： Satoshi Nagai , Kazuya Fukuhara , Masamitsu Itoh , Kenji Kawano , Satoshi Tanaka
发明人： Satoshi Nagai , Kazuya Fukuhara , Masamitsu Itoh , Kenji Kawano , Satoshi Tanaka
IPC分类号： G03F1/00 , G03F7/20 , G03F7/26
CPC分类号： G03F1/62 , G03F7/70158 , G03F7/70191
摘要： A photomask unit includes a mask substrate having patterns arranged at a pitch P; and a pellicle which protects the mask substrate, wherein the pellicle is configured so that transmittance of incident light of an incident angle ↓(0°
摘要翻译：光掩模单元包括具有以间距P布置的图案的掩模基板; 以及保护掩模基板的防护薄膜组件，其中防护薄膜组件使入射角↓（0°<90°）的入射光的透射率高于入射角0°的入射光的透射率。

4. 发明申请

US20080026300A1 Photomask manufacturing method and semiconductor device manufacturing method 有权
标题翻译：光掩模制造方法和半导体器件制造方法
公开(公告)号：US20080026300A1
公开(公告)日：2008-01-31
申请号：US11878580
申请日：2007-07-25
申请人： Masamitsu Itoh , Takashi Hirano , Kazuya Fukuhara
发明人： Masamitsu Itoh , Takashi Hirano , Kazuya Fukuhara
IPC分类号： H01L21/02 , G03F1/00
CPC分类号： G06F17/5081 , G03F1/50
摘要： This invention discloses a photomask manufacturing method. A pattern dimensional map is generated by preparing a photomask in which a mask pattern is formed on a transparent substrate, and measuring a mask in-plane distribution of the pattern dimensions. A transmittance correction coefficient map is generated by dividing a pattern formation region into a plurality of subregions, and determining a transmittance correction coefficient for each of the plurality of subregions. The transmittance correction value of each subregion is calculated on the basis of the pattern dimensional map and the transmittance correction coefficient map. The transmittance of the transparent substrate corresponding to each subregion is changed on the basis of the transmittance correction value.
摘要翻译：本发明公开了一种光掩模制造方法。通过准备其中在透明基板上形成掩模图案并测量图案尺寸的掩模面内分布的光掩模来生成图案尺寸图。通过将图案形成区域划分为多个子区域，并且确定多个子区域中的每个子区域的透射率校正系数来生成透射率校正系数图。基于图案尺寸图和透射率校正系数图计算每个子区域的透射率校正值。基于透射率校正值改变对应于每个子区域的透明基板的透射率。

5. 发明授权

US07960075B2 Photomask unit, exposing method and method for manufacturing semiconductor device 有权
标题翻译：光掩模单元，制造半导体器件的曝光方法和方法
公开(公告)号：US07960075B2
公开(公告)日：2011-06-14
申请号：US11939030
申请日：2007-11-13
申请人： Satoshi Nagai , Kazuya Fukuhara , Masamitsu Itoh , Kenji Kawano , Satoshi Tanaka
发明人： Satoshi Nagai , Kazuya Fukuhara , Masamitsu Itoh , Kenji Kawano , Satoshi Tanaka
IPC分类号： G03F1/00 , G02B5/08
CPC分类号： G03F1/62 , G03F7/70158 , G03F7/70191
摘要： A photomask unit includes a mask substrate having patterns arranged at a pitch P; and a pellicle which protects the mask substrate, wherein the pellicle is configured so that transmittance of incident light of an incident angle θ (0°
摘要翻译：光掩模单元包括具有以间距P布置的图案的掩模基板; 以及保护所述掩模基板的防护薄膜组件，其中，所述防护薄膜组件使得入射角的入射光的透射率; （0°<θ; <90°）高于入射角0°的入射光的透射率。

6. 发明申请

US20070134563A1 Photomask and method of manufacturing semiconductor device 审中-公开
标题翻译：光掩模和制造半导体器件的方法
公开(公告)号：US20070134563A1
公开(公告)日：2007-06-14
申请号：US11600783
申请日：2006-11-17
申请人： Kazuya Fukuhara , Masamitsu Itoh , Takashi Sato
发明人： Kazuya Fukuhara , Masamitsu Itoh , Takashi Sato
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F1/32 , G03F7/70425
摘要： A photomask is disclosed, which includes a substrate transparent to irradiation light, a low density diffraction area having a plurality of low-density arranged light reducing portions which are arranged at a low density on the transparent substrate at a period more than twice the wavelength of the irradiation light, and a high density diffraction area having a plurality of high-density arranged light reducing portions which are arranged at a high density on the transparent substrate at a period less than twice the wavelength of the irradiation light and have different optical characteristics from the low-density arranged light reducing portions.
摘要翻译：公开了一种光掩模，其包括对照射光透明的基板，低密度衍射区域，其具有多个低密度排列的减少光的部分，其以低于两倍于照射光和具有多个高密度排列减光部的高密度衍射区域，该多个高密度排列的减光部分以低于照射光的波长的两倍的周期以高密度排列在透明基板上，并且具有不同于低密度排列的光减少部分。

7. 发明申请

US20130179846A1 PHOTOMASK MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 失效
标题翻译：光电子制造方法和半导体器件制造方法
公开(公告)号：US20130179846A1
公开(公告)日：2013-07-11
申请号：US13785604
申请日：2013-03-05
申请人： Masamitsu Itoh , Takashi Hirano , Kazuya Fukuhara
发明人： Masamitsu Itoh , Takashi Hirano , Kazuya Fukuhara
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/50
摘要： This invention discloses a photomask manufacturing method. A pattern dimensional map is generated by preparing a photomask in which a mask pattern is formed on a transparent substrate, and measuring a mask in-plane distribution of the pattern dimensions. A transmittance correction coefficient map is generated by dividing a pattern formation region into a plurality of subregions, and determining a transmittance correction coefficient for each of the plurality of subregions. The transmittance correction value of each subregion is calculated on the basis of the pattern dimensional map and the transmittance correction coefficient map. The transmittance of the transparent substrate corresponding to each subregion is changed on the basis of the transmittance correction value.
摘要翻译：本发明公开了一种光掩模制造方法。通过准备其中在透明基板上形成掩模图案并测量图案尺寸的掩模面内分布的光掩模来生成图案尺寸图。通过将图案形成区域划分为多个子区域，并且确定多个子区域中的每个子区域的透射率校正系数来生成透射率校正系数图。基于图案尺寸图和透射率校正系数图计算每个子区域的透射率校正值。基于透射率校正值改变对应于每个子区域的透明基板的透射率。

8. 发明申请

US20070092811A1 Method for selecting photomask substrate, method for manufacturing photomask, and method for manufacturing semiconductor device 失效
标题翻译：光掩模基板的选择方法，光掩模的制造方法以及半导体装置的制造方法
公开(公告)号：US20070092811A1
公开(公告)日：2007-04-26
申请号：US11585130
申请日：2006-10-24
申请人： Kazuya Fukuhara , Masamitsu Itoh
发明人： Kazuya Fukuhara , Masamitsu Itoh
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F1/84 , G03F1/44
摘要： According to an aspect of the invention, there is provided a method for selecting a photomask substrate, including dividing a chip area scheduled to be arranged on the photomask substrate regarding a specific transfer pattern layer into a management pattern area in which an element pattern changed in shape by birefringence of the photomask substrate is arranged, and an area other than the management pattern area, setting a standard value of a size of birefringence of an area in which the management pattern area of the photomask substrate is arranged, inspecting the size of the birefringence of each of a plurality of photomask substrate candidates, and selecting a photomask substrate, in which the size of the birefringence satisfies the standard value, as a photomask substrate of the specific transfer pattern layer from the plurality of photomask substrate candidates.
摘要翻译：根据本发明的一个方面，提供了一种用于选择光掩模衬底的方法，包括将针对特定传输图案层排列在光掩模衬底上的芯片区域划分成其中元件图案改变的管理图案区域布置光掩模基板的双折射形状，并且设置管理图案区域以外的区域，设置布置有光掩模基板的管理图案区域的区域的双折射尺寸的标准值，检查多个光掩模衬底候选中的每一个的双折射，并且从多个光掩模衬底候选中选择其中双折射的尺寸满足标准值的光掩模衬底作为特定转移图案层的光掩模衬底。

9. 发明授权

US07904851B2 Photomask manufacturing method and semiconductor device manufacturing method 有权
标题翻译：光掩模制造方法和半导体器件制造方法
公开(公告)号：US07904851B2
公开(公告)日：2011-03-08
申请号：US11878580
申请日：2007-07-25
申请人： Masamitsu Itoh , Takashi Hirano , Kazuya Fukuhara
发明人： Masamitsu Itoh , Takashi Hirano , Kazuya Fukuhara
IPC分类号： G06F17/50 , G03F1/00
CPC分类号： G06F17/5081 , G03F1/50
摘要： This invention discloses a photomask manufacturing method. A pattern dimensional map is generated by preparing a photomask in which a mask pattern is formed on a transparent substrate, and measuring a mask in-plane distribution of the pattern dimensions. A transmittance correction coefficient map is generated by dividing a pattern formation region into a plurality of subregions, and determining a transmittance correction coefficient for each of the plurality of subregions. The transmittance correction value of each subregion is calculated on the basis of the pattern dimensional map and the transmittance correction coefficient map. The transmittance of the transparent substrate corresponding to each subregion is changed on the basis of the transmittance correction value.
摘要翻译：本发明公开了一种光掩模制造方法。通过准备其中在透明基板上形成掩模图案并测量图案尺寸的掩模面内分布的光掩模来生成图案尺寸图。通过将图案形成区域划分为多个子区域，并且确定多个子区域中的每个子区域的透射率校正系数来生成透射率校正系数图。基于图案尺寸图和透射率校正系数图计算每个子区域的透射率校正值。基于透射率校正值改变对应于每个子区域的透明基板的透射率。

10. 发明申请

US20100209829A1 PHOTOMASK MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：光电子制造方法和半导体器件制造方法
公开(公告)号：US20100209829A1
公开(公告)日：2010-08-19
申请号：US12770062
申请日：2010-04-29
申请人： Masamitsu Itoh , Takashi Hirano , Kazuya Fukuhara
发明人： Masamitsu Itoh , Takashi Hirano , Kazuya Fukuhara
IPC分类号： G03F1/00
CPC分类号： G06F17/5081 , G03F1/50
摘要： This invention discloses a photomask manufacturing method. A pattern dimensional map is generated by preparing a photomask in which a mask pattern is formed on a transparent substrate, and measuring a mask in-plane distribution of the pattern dimensions. A transmittance correction coefficient map is generated by dividing a pattern formation region into a plurality of subregions, and determining a transmittance correction coefficient for each of the plurality of subregions. The transmittance correction value of each subregion is calculated on the basis of the pattern dimensional map and the transmittance correction coefficient map. The transmittance of the transparent substrate corresponding to each subregion is changed on the basis of the transmittance correction value.
摘要翻译：本发明公开了一种光掩模制造方法。通过准备其中在透明基板上形成掩模图案并测量图案尺寸的掩模面内分布的光掩模来生成图案尺寸图。通过将图案形成区域划分为多个子区域，并且确定多个子区域中的每个子区域的透射率校正系数来生成透射率校正系数图。基于图案尺寸图和透射率校正系数图计算每个子区域的透射率校正值。基于透射率校正值改变对应于每个子区域的透明基板的透射率。

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