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1. 发明授权

US08679731B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US08679731B2
公开(公告)日：2014-03-25
申请号：US13606834
申请日：2012-09-07
申请人： Kazuya Fukuhara , Takaki Hashimoto , Kazuyuki Masukawa , Yasunobu Kai
发明人： Kazuya Fukuhara , Takaki Hashimoto , Kazuyuki Masukawa , Yasunobu Kai
IPC分类号： G03F7/20
CPC分类号： G03F1/00 , G03F1/36 , G03F7/70433
摘要： A semiconductor device manufacturing method includes applying illumination light to a photomask, and projecting diffracted light components from the photomask via a projection optical system to form a photoresist pattern on a substrate. The photomask includes a plurality of opening patterns which are arranged on each of a plurality of parallel lines at regular second intervals in a second direction and which have regular first intervals in a first direction perpendicular to the second direction. The plurality of opening patterns arranged on the adjacent ones of the plurality of parallel lines are displaced from each other half the second interval in the second direction. Moreover, the dimensions of the plurality of opening patterns and the complex amplitude transmittance of nontransparent region in the photomask are set so that three of the diffracted light components passing through the pupil of the projection optical system have equal amplitude.
摘要翻译：一种半导体器件制造方法，包括将照明光施加到光掩模，以及经由投影光学系统从光掩模投射衍射光成分，以在基板上形成光刻胶图案。光掩模包括多个开口图案，其以在第二方向上的规则的第二间隔布置在多条平行线中的每一条上，并且在垂直于第二方向的第一方向上具有规则的第一间隔。布置在多条平行线上相邻的多个平行线上的多个开口图案在第二方向上相互偏移第二间隔的一半。此外，设置多个开口图案的尺寸和光掩模中的非透明区域的复振幅透射率，使得穿过投影光学系统的光瞳的三个衍射光分量具有相等的幅度。

2. 发明申请

US20130179846A1 PHOTOMASK MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 失效
标题翻译：光电子制造方法和半导体器件制造方法
公开(公告)号：US20130179846A1
公开(公告)日：2013-07-11
申请号：US13785604
申请日：2013-03-05
申请人： Masamitsu Itoh , Takashi Hirano , Kazuya Fukuhara
发明人： Masamitsu Itoh , Takashi Hirano , Kazuya Fukuhara
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/50
摘要： This invention discloses a photomask manufacturing method. A pattern dimensional map is generated by preparing a photomask in which a mask pattern is formed on a transparent substrate, and measuring a mask in-plane distribution of the pattern dimensions. A transmittance correction coefficient map is generated by dividing a pattern formation region into a plurality of subregions, and determining a transmittance correction coefficient for each of the plurality of subregions. The transmittance correction value of each subregion is calculated on the basis of the pattern dimensional map and the transmittance correction coefficient map. The transmittance of the transparent substrate corresponding to each subregion is changed on the basis of the transmittance correction value.
摘要翻译：本发明公开了一种光掩模制造方法。通过准备其中在透明基板上形成掩模图案并测量图案尺寸的掩模面内分布的光掩模来生成图案尺寸图。通过将图案形成区域划分为多个子区域，并且确定多个子区域中的每个子区域的透射率校正系数来生成透射率校正系数图。基于图案尺寸图和透射率校正系数图计算每个子区域的透射率校正值。基于透射率校正值改变对应于每个子区域的透明基板的透射率。

3. 发明授权

US08373258B2 Semiconductor device and production method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08373258B2
公开(公告)日：2013-02-12
申请号：US13118401
申请日：2011-05-28
申请人： Shinya Mizusaki , Kazuya Fukuhara
发明人： Shinya Mizusaki , Kazuya Fukuhara
IPC分类号： H01L23/495 , H01L21/56 , H01L21/50 , H01L21/44
CPC分类号： H01L23/49541 , H01L21/561 , H01L21/565 , H01L21/6835 , H01L21/6836 , H01L23/3107 , H01L23/49503 , H01L23/49548 , H01L23/544 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/97 , H01L2221/68327 , H01L2223/54413 , H01L2223/54433 , H01L2223/54486 , H01L2224/05554 , H01L2224/27013 , H01L2224/32057 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2224/83001 , H01L2224/83385 , H01L2224/85001 , H01L2224/92247 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/181 , H01L2224/85 , H01L2224/83 , H01L2924/00012 , H01L2924/00 , H01L2224/05599
摘要： An object of the present invention is to improve the quality control of a semiconductor device. By forming an inscription comprising a culled or pixel skipping pattern of dimples on the upper surface of a die pad in a QFN, it is possible to confirm the inscription by X-ray inspection or the like even after individuation and specify a cavity of a resin molding die. Further, it is possible to specify the position of a device region in a lead frame. As a result, when a defect appears, it is possible to sort a defective QFN by appearance inspection and improve quality control in the assembly of a QFN.
摘要翻译：本发明的目的在于提高半导体器件的质量控制。通过在QFN中在芯片垫的上表面上形成包括凹陷的剔除或像素跳过图案的题字，即使在个体化之后也可以通过X射线检查等来确认题字，并指定树脂的空腔成型模具。此外，可以指定引线框架中的器件区域的位置。结果，当出现缺陷时，可以通过外观检查对有缺陷的QFN进行分类，并提高组装QFN的质量控制。

4. 发明授权

US08343692B2 Exposure apparatus inspection mask and exposure apparatus inspection method 有权
标题翻译：曝光装置检查面罩和曝光装置检查方法
公开(公告)号：US08343692B2
公开(公告)日：2013-01-01
申请号：US12886157
申请日：2010-09-20
申请人： Nobuhiro Komine , Kazuya Fukuhara
发明人： Nobuhiro Komine , Kazuya Fukuhara
IPC分类号： G03F1/38
CPC分类号： G03F1/44 , G03F7/70641 , G03F7/70683
摘要： According to one embodiment, an exposure apparatus inspection mask includes a substrate and a first pattern portion. The substrate has a major surface reflective to exposure light. The first pattern portion is provided on the major surface. The first pattern portion includes a first lower layer and a plurality of first reflection layers. The first lower layer is provided on the major surface and includes a plurality of first absorption layers periodically arranged at a prescribed pitch along a first direction parallel to the major surface and is absorptive to the exposure light. The plurality of first reflection layers are provided on a side of the first lower layer opposite to the substrate, are periodically arranged at the pitch along the first direction, expose at least part of each of the plurality of first absorption layers, and have higher reflectance for the exposure light than the first absorption layers.
摘要翻译：根据一个实施例，曝光装置检查掩模包括基板和第一图案部分。基板具有反射曝光光的主表面。第一图案部分设置在主表面上。第一图案部分包括第一下层和多个第一反射层。第一下层设置在主表面上，并且包括沿着平行于主表面的第一方向以规定间距周期性地排列并且吸收曝光光的多个第一吸收层。多个第一反射层设置在与基板相对的第一下层的一侧上，沿着第一方向以间距周期性地布置，暴露多个第一吸收层中的每一个的至少一部分，并且具有更高的反射率用于曝光光比第一吸收层。

5. 发明申请

US20120070985A1 EXPOSURE METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：曝光方法和制造半导体器件的方法
公开(公告)号：US20120070985A1
公开(公告)日：2012-03-22
申请号：US13233971
申请日：2011-09-15
申请人： Takaki Hashimoto , Kazuya Fukuhara , Toshiya Kotani , Yasunobu Kai
发明人： Takaki Hashimoto , Kazuya Fukuhara , Toshiya Kotani , Yasunobu Kai
IPC分类号： H01L21/768 , G03B27/32
CPC分类号： H01L27/0207 , G03F1/50 , G03F7/70325 , H01L21/0274 , H01L21/31144 , H01L27/11519 , H01L27/11524
摘要： According to one embodiment, an exposure method is disclosed. The method can include applying light to a photomask by an illumination. The method can include converging diffracted beams emitted from the photomask by a lens. In addition, the method can include imaging a plurality of point images on an exposure surface. On the photomask, a light transmitting region is formed at a lattice point represented by nonorthogonal unit cell vectors, and in the illumination, a light emitting region is set so that three or more of the diffracted beams pass through positions equidistant from center of a pupil of the lens.
摘要翻译：根据一个实施例，公开了曝光方法。该方法可以包括通过照明将光照射到光掩模。该方法可以包括通过透镜会聚从光掩模发射的衍射光束。此外，该方法可以包括在曝光表面上成像多个点图像。在光掩模上，在由非正交单元矢量表示的格点处形成光透射区域，在照明中，设定发光区域，使得三个以上的衍射光束通过与瞳孔中心等距的位置的镜头。

6. 发明授权

US08122385B2 Mask pattern correcting method 有权
标题翻译：掩模图案校正方法
公开(公告)号：US08122385B2
公开(公告)日：2012-02-21
申请号：US12129167
申请日：2008-05-29
申请人： Kazuya Fukuhara , Tatsuhiko Higashiki , Toshiya Kotani , Satoshi Tanaka , Takashi Sato , Akiko Mimotogi , Masaki Satake
发明人： Kazuya Fukuhara , Tatsuhiko Higashiki , Toshiya Kotani , Satoshi Tanaka , Takashi Sato , Akiko Mimotogi , Masaki Satake
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： In a model-based OPC which makes a suitable mask correction for each mask pattern using an optical image intensity simulator, a mask pattern is divided into subregions and the model of optical image intensity simulation is changed according to the contents of the pattern in each subregion. When the minimum dimensions of the mask pattern are smaller than a specific threshold value set near the exposure wavelength, the region is calculated using a high-accuracy model and the other regions are calculated using a high-speed model.
摘要翻译：在基于模型的OPC中，使用光学图像强度模拟器对每个掩模图案进行适当的掩模校正，将掩模图案划分为子区域，并且根据每个子区域中的图案的内容来改变光学图像强度模拟模型。当掩模图案的最小尺寸小于在曝光波长附近设置的特定阈值时，使用高精度模型计算该区域，并且使用高速模型来计算其它区域。

7. 发明授权

US08077292B2 Projection exposure method 失效
标题翻译：投影曝光法
公开(公告)号：US08077292B2
公开(公告)日：2011-12-13
申请号：US12395513
申请日：2009-02-27
申请人： Yosuke Kitamura , Masaki Satake , Shoji Mimotogi , Kazuya Fukuhara
发明人： Yosuke Kitamura , Masaki Satake , Shoji Mimotogi , Kazuya Fukuhara
IPC分类号： G03B27/52
CPC分类号： G03B27/42 , G03B27/72
摘要： A projection exposure method that projects the shape of a hole onto a wafer by projecting a diffracted light, which is produced by applying light to a mask having a pattern for forming a hole pattern, onto the wafer through a projection optical system for exposure, wherein, in a plane substantially perpendicular to an optical axis, the light applied to the mask has a first intensity distribution in which the intensity is higher in the vicinity of eight apexes of an octagon centered at the optical axis than in other areas, the mask has a plurality of first opening patterns are arranged in a rectangular lattice configuration having sides parallel to diagonals of the octagon passing through the optical axis, and a plurality of second opening patterns are arranged in a face-centered rectangular lattice configuration having sides parallel to diagonals of the octagon passing through the optical axis.
摘要翻译：一种投影曝光方法，其通过将通过将具有用于形成孔图案的图案的掩模施加光而产生的衍射光投射到晶片上的投影光学系统进行曝光，将衍射光投射到晶片上，其中在基本上垂直于光轴的平面中，施加到掩模的光具有第一强度分布，其中在光轴中心的八边形的八个顶点附近的强度比在其他区域中的强度高，掩模具有多个第一开口图案被布置成矩形格子构型，其具有平行于通过光轴的八边形的对角线的边，并且多个第二开口图案以面向中心的矩形格子构造布置，具有平行于八角形通过光轴。

8. 发明授权

US07803502B2 Photomask and method of manufacturing semiconductor device using the photomask 失效
标题翻译：光掩模和使用光掩模制造半导体器件的方法
公开(公告)号：US07803502B2
公开(公告)日：2010-09-28
申请号：US11819104
申请日：2007-06-25
申请人： Takashi Sato , Kazuya Fukuhara
发明人： Takashi Sato , Kazuya Fukuhara
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F7/70283 , G03F7/70566
摘要： A photomask includes a mask substrate to be irradiated with irradiation light, and first and second phase shifters arranged on the mask substrate. The first phase shifter is arranged on the mask substrate with a first pitch not larger than eight times the wavelength of the irradiation light, has a transmittance of not more than 5% for the irradiation light, and phase-shifts the irradiation light by 180°. The second phase shifter is arranged on the mask substrate with a second pitch larger than eight times the wavelength, has a transmittance of not more than 5%, and phase-shifts the irradiation light by 180°.
摘要翻译：光掩模包括用照射光照射的掩模基板，以及布置在掩模基板上的第一和第二移相器。第一移相器以不大于照射光的八倍的第一音调布置在掩模基板上，对于照射光具有不大于5％的透射率，并将照射光相移180° 。第二移相器布置在掩模基板上，第二间距大于波长的八倍，透射率不大于5％，并将照射光相移180°。

9. 发明申请

US20100195069A1 EXPOSURE METHOD AND EXPOSURE SYSTEM 审中-公开
标题翻译：曝光方法和曝光系统
公开(公告)号：US20100195069A1
公开(公告)日：2010-08-05
申请号：US12696111
申请日：2010-01-29
申请人： Kazuya FUKUHARA
发明人： Kazuya FUKUHARA
IPC分类号： G03B27/68 , G03F7/20
CPC分类号： G03B27/68 , G03F1/36 , G03F1/70 , G03F7/70441 , G03F7/705
摘要： An exposure method has acquiring first OPE (Optical Proximity Effect) error corresponding to a first and second transcriptional pattern portions formed by transcribing a first and second pattern portions of a mask pattern onto a substrate with an exposure apparatus, computing a first correction amount of an exposure condition, the first correction amount reducing the first OPE error, computing a best focus difference between the first transcriptional pattern portion and the second transcriptional pattern portion transcribed with the exposure apparatus to which the first correction amount is imparted, computing a second correction amount of a projection optical system of the exposure apparatus, the second correction amount reducing the best focus difference, acquiring second OPE error corresponding to the first and second transcriptional pattern portions transcribed with the exposure apparatus to which the first and second correction amounts are imparted, and performing exposure processing with the exposure apparatus using a mask comprising the mask pattern, the first correction amount and the second correction amount being imparted to the exposure apparatus, when the second OPE error is included in a predetermined range.
摘要翻译：曝光方法获得与通过用曝光装置将掩模图案的第一图案部分和第二图案部分转印到基板上形成的第一和第二转录图案部分相对应的第一OPE（光学近似效应）误差，计算第一校正量曝光条件，第一校正量减小第一OPE误差，计算第一转录图案部分与被赋予第一校正量的曝光装置转录的第二转录图案部分之间的最佳聚焦差，计算第二校正量曝光装置的投影光学系统，第二校正量减少最佳聚焦差异，获取与施加了第一和第二校正量的曝光装置转录的第一和第二转录图案部分相对应的第二OPE误差，并执行曝光过程当第二OPE误差被包括在预定范围内时，使用包括掩模图案的掩模的曝光装置施加第一校正量和第二校正量给曝光装置。

10. 发明授权

US07692769B2 Exposure apparatus, exposure method, and semiconductor device manufacturing method 失效
标题翻译：曝光装置，曝光方法以及半导体装置的制造方法
公开(公告)号：US07692769B2
公开(公告)日：2010-04-06
申请号：US11543082
申请日：2006-10-05
申请人： Kazuya Fukuhara , Takashi Sato
发明人： Kazuya Fukuhara , Takashi Sato
IPC分类号： G03B27/54 , G03B27/72
CPC分类号： G03F7/70091 , G03F7/70566
摘要： According to an aspect of the invention, there is provided an exposure apparatus including an illumination optical system which forms an effective light source having a first polarization area where a mask pattern is illuminated with polarized light dominated by an electric vector component radial from a center position on an effective light source plane, and a second polarization area where the mask pattern is illuminated with light whose electric vector vibration is not biased in a specific direction; and a projection optical system which projects an image of the mask pattern onto an object to be processed.
摘要翻译：根据本发明的一个方面，提供了一种曝光装置，包括照明光学系统，该照明光学系统形成具有第一偏振区域的有效光源，其中掩模图案被以从中心位置为中心的矢量分量为主的偏振光照亮以及第二极化区域，其中所述掩模图案被电矢量振动在特定方向上没有偏压的光照射; 以及将掩模图案的图像投影到待处理对象上的投影光学系统。

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