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1. 发明授权

US08533634B2 Exposure mask manufacturing method, drawing apparatus, semiconductor device manufacturing method, and mask blanks product 有权
标题翻译：曝光掩模制造方法，绘图装置，半导体器件制造方法和掩模毛坯产品
公开(公告)号：US08533634B2
公开(公告)日：2013-09-10
申请号：US12659396
申请日：2010-03-08
申请人： Masamitsu Itoh
发明人： Masamitsu Itoh
IPC分类号： G06F17/50 , G03F1/00 , H01L21/00 , H01L21/20 , H01L21/311
CPC分类号： G03F1/70
摘要： A method of manufacturing an exposure mask includes generating or preparing flatness variation data relating to a mask blanks substrate to be processed into an exposure mask, the flatness variation data being data relating to change of flatness of the mask blank substrate caused when the mask blank substrate is chucked by a chuck unit of an exposure apparatus, generating position correction, data of a pattern to be drawn on the mask blanks substrate based on the flatness variation data such that a mask pattern of the exposure mask comes to a predetermined position in a state that the exposure mask is chucked by the chuck unit, and drawing a pattern on the mask blanks substrate, the drawing the pattern including drawing the pattern with correcting a drawing position of the pattern and inputting drawing data corresponding to the pattern and the position correction data into a drawing apparatus.
摘要翻译：制造曝光掩模的方法包括：生成或准备与待处理的掩模坯料基板相关的平坦度变化数据为曝光掩模，平坦度变化数据是与掩模坯料基板由曝光装置的卡盘单元夹持，基于平坦度变化数据产生位置校正，要在掩模毛坯基板上绘制的图案的数据，使得曝光掩模的掩模图案在状态下到达预定位置曝光掩模由卡盘单元卡住，并且在掩模坯料基板上绘制图案，绘制包括绘制图案的图案，校正图案的绘图位置并输入与图案相对应的绘图数据和位置校正数据成为绘图装置。

2. 发明授权

US08465907B2 Manufacturing method for exposure mask, generating method for mask substrate information, mask substrate, exposure mask, manufacturing method for semiconductor device and server 有权
公开(公告)号：US08465907B2
公开(公告)日：2013-06-18
申请号：US13525712
申请日：2012-06-18
申请人： Masamitsu Itoh
发明人： Masamitsu Itoh
IPC分类号： G03F7/26
CPC分类号： G03F7/707 , G03F1/60 , G03F7/703 , G03F7/70433 , G03F7/70783 , Y10S438/975
摘要： There is disclosed a manufacturing method for exposure mask, which comprises acquiring a first information showing surface shape of surface of each of a plurality of mask substrates, and a second information showing the flatness of the surface of each of mask substrates before and after chucked on a mask stage of an exposure apparatus, forming a corresponding relation of each mask substrate, the first information and the second information, selecting the second information showing a desired flatness among the second information of the corresponding relation, and preparing another mask substrate having the same surface shape as the surface shape indicated by the first information in the corresponding relation with the selected second information, and forming a desired pattern on the above-mentioned another mask substrate.

3. 发明授权

US08407629B2 Pattern verification-test method, optical image intensity distribution acquisition method, and computer program 有权
标题翻译：模式验证测试方法，光学图像强度分布采集方法和计算机程序
公开(公告)号：US08407629B2
公开(公告)日：2013-03-26
申请号：US13491639
申请日：2012-06-08
申请人： Masamitsu Itoh , Satoshi Tanaka
发明人： Masamitsu Itoh , Satoshi Tanaka
IPC分类号： G06F17/50
CPC分类号： G03F1/86
摘要： A pattern verification-test method according to an embodiment of the present invention includes: deriving an illumination condition at a verification-test subject position in a photomask surface of a mask pattern as a verification or a test subject based on the verification-test subject position and illumination condition information about a distribution of an illumination condition in a photomask surface of exposure light incident on the mask pattern, performing lithography simulation on the mask pattern based on the derived illumination condition and the mask pattern, and verifying or testing the mask pattern based on a result of the lithography simulation.
摘要翻译：根据本发明的实施例的图案验证测试方法包括：基于验证测试对象位置，在掩模图案的光掩模表面中的验证测试对象位置处作为验证或测试对象导出照明条件以及关于入射到掩模图案的曝光光的光掩模表面中的照明条件的分布的照明条件信息，基于导出的照明条件和掩模图案对掩模图案进行光刻模拟，以及基于掩模图案的验证或测试在光刻模拟的结果。

4. 发明授权

US08407628B2 Photomask manufacturing method and semiconductor device manufacturing method 有权
公开(公告)号：US08407628B2
公开(公告)日：2013-03-26
申请号：US12770062
申请日：2010-04-29
申请人： Masamitsu Itoh , Takashi Hirano , Kazuya Fukuhara
发明人： Masamitsu Itoh , Takashi Hirano , Kazuya Fukuhara
IPC分类号： G06F17/50 , G03F1/00
CPC分类号： G06F17/5081 , G03F1/50
摘要： This invention discloses a photomask manufacturing method. A pattern dimensional map is generated by preparing a photomask in which a mask pattern is formed on a transparent substrate, and measuring a mask in-plane distribution of the pattern dimensions. A transmittance correction coefficient map is generated by dividing a pattern formation region into a plurality of subregions, and determining a transmittance correction coefficient for each of the plurality of subregions. The transmittance correction value of each subregion is calculated on the basis of the pattern dimensional map and the transmittance correction coefficient map. The transmittance of the transparent substrate corresponding to each subregion is changed on the basis of the transmittance correction value.

5. 发明申请

US20120040293A1 REFLECTIVE MASK, MANUFACTURING METHOD FOR REFLECTIVE MASK, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE 审中-公开
标题翻译：反射掩模，反射掩模的制造方法和半导体器件的制造方法
公开(公告)号：US20120040293A1
公开(公告)日：2012-02-16
申请号：US13282497
申请日：2011-10-27
申请人： Ryoichi Inanami , Yumi Nakajima , Masamitsu Itoh
发明人： Ryoichi Inanami , Yumi Nakajima , Masamitsu Itoh
IPC分类号： G03F7/20 , B82Y40/00
CPC分类号： G03F1/24
摘要： A reflective mask comprising: a reflective layer that is arranged on a surface on a side on which EUV light is irradiated and reflects the EUV light; a buffer layer containing Cr that is arranged on a side of the reflective layer on which the EUV light is irradiated and covers an entire surface of the reflective layer; and a non-reflective layer that is arranged on a side of the buffer layer on which the EUV light is irradiated and in which an absorber that absorbs the irradiated EUV light is arranged in a position corresponding to a mask pattern to be reduced and transferred onto a wafer.
摘要翻译：一种反射掩模，包括：反射层，其被布置在其上照射有EUV光的一侧的表面上并且反射所述EUV光; 包含Cr的缓冲层，其布置在其上照射有EUV光的反射层的一侧并覆盖反射层的整个表面; 以及布置在其上照射有EUV光的缓冲层侧的非反射层，并且其中吸收被照射的EUV光的吸收体被布置在与要被还原并转移到其上的掩模图案相对应的位置晶圆。

6. 发明申请

US20100228379A1 Exposure mask manufacturing method, drawing apparatus, semiconductor device manufacturing method, and mask blanks product 有权
标题翻译：曝光掩模制造方法，绘图装置，半导体器件制造方法和掩模毛坯产品
公开(公告)号：US20100228379A1
公开(公告)日：2010-09-09
申请号：US12659396
申请日：2010-03-08
申请人： Masamitsu Itoh
发明人： Masamitsu Itoh
IPC分类号： G06F19/00
CPC分类号： G03F1/70
摘要： A method of manufacturing an exposure mask includes generating or preparing flatness variation data relating to a mask blanks substrate to be processed into an exposure mask, the flatness variation data being data relating to change of flatness of the mask blank substrate caused when the mask blank substrate is chucked by a chuck unit of an exposure apparatus, generating position correction, data of a pattern to be drawn on the mask blanks substrate based on the flatness variation data such that a mask pattern of the exposure mask comes to a predetermined position in a state that the exposure mask is chucked by the chuck unit, and drawing a pattern on the mask blanks substrate, the drawing the pattern including drawing the pattern with correcting a drawing position of the pattern and inputting drawing data corresponding to the pattern and the position correction data into a drawing apparatus.
摘要翻译：制造曝光掩模的方法包括：生成或准备与待处理的掩模坯料基板相关的平坦度变化数据为曝光掩模，平坦度变化数据是与掩模坯料基板由曝光装置的卡盘单元夹持，基于平坦度变化数据产生位置校正，要在掩模毛坯基板上绘制的图案的数据，使得曝光掩模的掩模图案在状态下到达预定位置曝光掩模由卡盘单元卡住，并且在掩模坯料基板上绘制图案，绘制包括绘制图案的图案，校正图案的绘图位置并输入与图案相对应的绘图数据和位置校正数据成为绘图装置。

7. 发明授权

US07740994B2 Method for selecting photomask substrate, method for manufacturing photomask, and method for manufacturing semiconductor device 失效
标题翻译：光掩模基板的选择方法，光掩模的制造方法以及半导体装置的制造方法
公开(公告)号：US07740994B2
公开(公告)日：2010-06-22
申请号：US11585130
申请日：2006-10-24
申请人： Kazuya Fukuhara , Masamitsu Itoh
发明人： Kazuya Fukuhara , Masamitsu Itoh
IPC分类号： G03F1/00
CPC分类号： G03F1/84 , G03F1/44
摘要： According to an aspect of the invention, there is provided a method for selecting a photomask substrate, including dividing a chip area scheduled to be arranged on the photomask substrate regarding a specific transfer pattern layer into a management pattern area in which an element pattern changed in shape by birefringence of the photomask substrate is arranged, and an area other than the management pattern area, setting a standard value of a size of birefringence of an area in which the management pattern area of the photomask substrate is arranged, inspecting the size of the birefringence of each of a plurality of photomask substrate candidates, and selecting a photomask substrate, in which the size of the birefringence satisfies the standard value, as a photomask substrate of the specific transfer pattern layer from the plurality of photomask substrate candidates.
摘要翻译：根据本发明的一个方面，提供了一种用于选择光掩模衬底的方法，包括将针对特定传输图案层布置在光掩模衬底上的芯片区域划分成其中元件图案改变的管理图案区域布置光掩模基板的双折射形状，并且设置管理图案区域以外的区域，设置布置有光掩模基板的管理图案区域的区域的双折射尺寸的标准值，检查多个光掩模衬底候选中的每一个的双折射，并且从多个光掩模衬底候选中选择其中双折射的尺寸满足标准值的光掩模衬底作为特定转移图案层的光掩模衬底。

8. 发明申请

US20090227112A1 EXPOSURE MASK MANUFACTURING METHOD, DRAWING APPARATUS, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND MASK BLANKS PRODUCT 有权
标题翻译：曝光掩模制造方法，绘图装置，半导体器件制造方法和掩模产品
公开(公告)号：US20090227112A1
公开(公告)日：2009-09-10
申请号：US12468143
申请日：2009-05-19
申请人： MASAMITSU ITOH
发明人： MASAMITSU ITOH
IPC分类号： H01L21/308 , G06F17/50
CPC分类号： G03F1/70
摘要： A method of manufacturing an exposure mask includes generating or preparing flatness variation data relating to a mask blanks substrate to be processed into an exposure mask, the flatness variation data being data relating to change of flatness of the mask blank substrate caused when the mask blank substrate is chucked by a chuck unit of an exposure apparatus, generating position correction data of a pattern to be drawn on the mask blanks substrate based on the flatness variation data such that a mask pattern of the exposure mask comes to a predetermined position in a state that the exposure mask is chucked by the chuck unit, and drawing a pattern on the mask blanks substrate, the drawing the pattern including drawing the pattern with correcting a drawing position of the pattern and inputting drawing data corresponding to the pattern and the position correction data into a drawing apparatus.
摘要翻译：制造曝光掩模的方法包括：生成或准备与待处理的掩模坯料基板相关的平坦度变化数据为曝光掩模，平坦度变化数据是与掩模坯料基板被曝光装置的卡盘单元卡住，基于平坦度变化数据生成要在掩模毛坯基板上绘制的图案的位置校正数据，使得曝光掩模的掩模图案在预定位置处于曝光掩模由卡盘单元卡住，并且在掩模板基板上绘制图案，绘制包括绘制图案的图案，并校正图案的绘制位置，并将对应于图案和位置校正数据的绘图数据输入到绘图装置。

9. 发明授权

US07435609B2 Manufacturing method for exposure mask, generating method for mask substrate information, mask substrate, exposure mask, manufacturing method for semiconductor device and server 有权
标题翻译：曝光掩模的制造方法，掩模基板信息的生成方法，掩模基板，曝光掩模，半导体装置和服务器的制造方法
公开(公告)号：US07435609B2
公开(公告)日：2008-10-14
申请号：US11147232
申请日：2005-06-08
申请人： Masamitsu Itoh
发明人： Masamitsu Itoh
IPC分类号： H01L21/00
CPC分类号： G03F7/707 , G03F1/60 , G03F7/703 , G03F7/70433 , G03F7/70783 , Y10S438/975
摘要： There is disclosed a manufacturing method for exposure mask, which comprises acquiring a first information showing surface shape of surface of each of a plurality of mask substrates, and a second information showing the flatness of the surface of each of mask substrates before and after chucked on a mask stage of an exposure apparatus, forming a corresponding relation of each mask substrate, the first information and the second information, selecting the second information showing a desired flatness among the second information of the corresponding relation, and preparing another mask substrate having the same surface shape as the surface shape indicated by the first information in the corresponding relation with the selected second information, and forming a desired pattern on the above-mentioned another mask substrate.
摘要翻译：公开了一种用于曝光掩模的制造方法，其包括获取表示多个掩模基板中的每一个的表面的表面形状的第一信息，以及示出在夹持之前和之后每个掩模基板的表面的平坦度的第二信息曝光装置的掩模台，形成每个掩模基板的对应关系，第一信息和第二信息，选择表示对应关系的第二信息之间的期望的平坦度的第二信息，以及准备另一掩模基板表面形状作为由与所选择的第二信息的对应关系中的第一信息指示的表面形状，并且在上述另一掩模基板上形成期望的图案。

10. 发明申请

US20080124633A1 PHOTOMASK UNIT, EXPOSING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：光电单元，制造半导体器件的曝光方法和方法
公开(公告)号：US20080124633A1
公开(公告)日：2008-05-29
申请号：US11939030
申请日：2007-11-13
申请人： Satoshi Nagai , Kazuya Fukuhara , Masamitsu Itoh , Kenji Kawano , Satoshi Tanaka
发明人： Satoshi Nagai , Kazuya Fukuhara , Masamitsu Itoh , Kenji Kawano , Satoshi Tanaka
IPC分类号： G03F1/00 , G03F7/20 , G03F7/26
CPC分类号： G03F1/62 , G03F7/70158 , G03F7/70191
摘要： A photomask unit includes a mask substrate having patterns arranged at a pitch P; and a pellicle which protects the mask substrate, wherein the pellicle is configured so that transmittance of incident light of an incident angle ↓(0°
摘要翻译：光掩模单元包括具有以间距P布置的图案的掩模基板; 以及保护掩模基板的防护薄膜组件，其中防护薄膜组件使入射角↓（0°<90°）的入射光的透射率高于入射角0°的入射光的透射率。

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