专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明申请

US20080014762A1 PROCESS FOR PRODUCING ZIRCONIUM OXIDE THIN FILMS 有权
标题翻译：生产氧化锆薄膜的方法
公开(公告)号：US20080014762A1
公开(公告)日：2008-01-17
申请号：US11864663
申请日：2007-09-28
申请人： Matti Putkonen
发明人： Matti Putkonen
IPC分类号： H01L21/31
CPC分类号： H01L21/0228 , C23C16/405 , C23C16/45531 , C23C16/45553 , H01L21/02189 , H01L21/02192 , H01L21/02194 , H01L21/28167 , H01L21/28194 , H01L21/28211 , H01L21/3141 , H01L21/31604 , H01L21/31641 , H01L29/517 , H01M8/1253 , Y02E60/525 , Y02P70/56
摘要： This invention concerns a process for producing oxide thin film on a substrate by an ALD type process. According to the process, alternating vapour-phase pulses of at least one metal source material, and at least one oxygen source material are fed into a reaction space and contacted with the substrate. According to the invention, an yttrium source material and a zirconium source material are alternately used as the metal source material so as to form an yttrium-stabilised zirconium oxide (YSZ) thin film on a substrate.
摘要翻译：本发明涉及通过ALD型工艺在衬底上生产氧化物薄膜的方法。根据该方法，将至少一种金属源材料和至少一种氧源材料的交替气相脉冲进料到反应空间中并与基底接触。根据本发明，交替使用钇源材料和锆源材料作为金属源材料，以在衬底上形成钇稳定的氧化锆（YSZ）薄膜。

52. 发明授权

US07276774B2 Trench isolation structures for integrated circuits 有权
标题翻译：集成电路的沟槽隔离结构
公开(公告)号：US07276774B2
公开(公告)日：2007-10-02
申请号：US10867826
申请日：2004-06-14
申请人： Ivo Raaijmakers , Pekka T. Soininen , Ernst H. A. Granneman
发明人： Ivo Raaijmakers , Pekka T. Soininen , Ernst H. A. Granneman
IPC分类号： H01L21/762
CPC分类号： H01L21/02164 , H01L21/02145 , H01L21/02178 , H01L21/02216 , H01L21/0228 , H01L21/3141 , H01L21/3144 , H01L21/3145 , H01L21/31612 , H01L21/3162 , H01L21/76224
摘要： A dielectric film is formed by atomic layer deposition to conformally fill a narrow, deep trench for device isolation. The method of the illustrated embodiments includes alternately pulsing vapor-phase reactants in a string of cycles, where each cycle deposits no more than about a monolayer of material, capable of completely filling high aspect ratio trenches. Additionally, the trench-fill material composition can be tailored by processes described herein, particularly to match the coefficient of thermal expansion (CTE) to that of the surrounding substrate within which the trench is formed. Mixed phases of mullite and silica have been found to meet the goals of device isolation and matched CTE. The described process includes mixing atomic layer deposition cycles of aluminum oxide and silicon oxide in ratios selected to achieve the desired composition of the isolation material, namely on the order of 30% alumina and 70% silicon oxide by weight.
摘要翻译：通过原子层沉积形成电介质膜，以保形地填充狭窄的深沟槽，用于器件隔离。所示实施方案的方法包括交替地以一系列循环脉冲气相反应物，其中每个循环不超过约单层材料，能够完全填充高纵横比沟槽。此外，沟槽填充材料组合物可以通过本文所述的方法来定制，特别是使热膨胀系数（CTE）与其中形成沟槽的周围基底的热膨胀系数相匹配。已经发现莫来石和二氧化硅的混合相达到器件隔离和匹配CTE的目标。所描述的方法包括以选择的比例混合氧化铝和氧化硅的原子层沉积循环，以达到分离材料的所需组成，即按重量计30％氧化铝和70％氧化硅。

53. 发明授权

US07273819B2 Method and apparatus for processing semiconductor substrates 有权
标题翻译：用于处理半导体衬底的方法和装置
公开(公告)号：US07273819B2
公开(公告)日：2007-09-25
申请号：US11049048
申请日：2005-02-01
申请人： Theodorus G. M. Oosterlaken , Frank Huussen , Menso Hendriks
发明人： Theodorus G. M. Oosterlaken , Frank Huussen , Menso Hendriks
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/44 , H01L21/28556 , H01L21/31658
摘要： Substrates in a reaction chamber are sequentially exposed to at least three gas atmospheres: a first atmosphere of a first purge gas, a second atmosphere of a process gas and a third atmosphere of a second purge gas. The gases are introduced into the reaction chamber from one end of the chamber and exit from the opposite end. Successive gases entering the chamber are selected so that a stable interface with the immediately preceding gas can be maintained. For example, when the gases are fed into the chamber at the chamber's top end and are exhausted at the bottom end, the gases are chosen with successively lower molecular weights. In effect, each gas atmosphere stays on top of and pushes the previous gas atmosphere out of the chamber from the top down. Advantageously, the gases can be more effectively and completely removed from the chamber.
摘要翻译：反应室中的底物依次暴露于至少三个气体环境：第一吹扫气体的第一气氛，处理气体的第二气氛和第二吹扫气体的第三气氛。气体从腔室的一端引入反应室并从相对端排出。选择进入腔室的连续气体，使得能够保持与前一个气体的稳定界面。例如，当气体在室的顶端进料到室中并在底端被排出时，气体以连续较低的分子量被选择。实际上，每个气体气体保持在顶部并将先前的气体气体从顶部向下推出室外。有利地，气体可以更有效地并且完全从腔室移除。

54. 发明申请

US20070122128A1 METHOD AND SYSTEM FOR LOADING SUBSTRATE SUPPORTS INTO A SUBSTRATE HOLDER 有权
标题翻译：用于将基板支撑件装载到基板支架中的方法和系统
公开(公告)号：US20070122128A1
公开(公告)日：2007-05-31
申请号：US11669842
申请日：2007-01-31
申请人： Christianus De Ridder
发明人： Christianus De Ridder
IPC分类号： A21B2/00
CPC分类号： G01R31/2893
摘要： Wafer supports are provided that have a diameter smaller than the diameter of the wafer that they are to support in a wafer boat. The perimeter of the wafer support is preferably continuous, extending completely around in a 360° span, and is sized to fit between the protrusions supporting a particular wafer in a wafer cassette. To load the wafer boat, an end effector removes the wafer support from a wafer boat and moves the wafer support into a wafer cassette, where the end effector moves upward to seat a wafer upon the wafer support. The wafer and wafer support are then transported to the wafer boat and the wafer support and the wafer are lowered onto a wafer slot surface in a wafer slot in the wafer boat, to transfer the wafer support and wafer from the end effector to the wafer boat.
摘要翻译：提供的晶片支撑件的直径小于它们将在晶片舟皿中支撑的晶片的直径。晶片支撑件的周边优选地是连续的，以360°跨度完全延伸，并且其尺寸适于装配在支撑晶片盒中的特定晶片的突起之间。为了装载晶片舟，末端执行器从晶片舟皿移除晶片支撑并将晶片支撑件移动到晶片盒中，其中端部执行器向上移动以将晶片置于晶片支撑件上。然后将晶片和晶片支撑件输送到晶片舟皿，并且晶片支撑件和晶片下降到晶片舟皿的晶片槽中的晶片槽表面上，以将晶片支撑件和晶片从端部执行器传送到晶片舟。

55. 发明授权

US07202491B2 Method for sensing wafers located inside a closed wafer cassette 有权
标题翻译：用于感测位于封闭晶片盒内的晶片的方法
公开(公告)号：US07202491B2
公开(公告)日：2007-04-10
申请号：US11343476
申请日：2006-01-30
申请人： Adriaan Garssen , Joost van Groen , Christianus Gerardus Maria de Ridder
发明人： Adriaan Garssen , Joost van Groen , Christianus Gerardus Maria de Ridder
IPC分类号： G01N21/86 , G01N21/88 , G01B11/02
CPC分类号： H01L21/67265 , G01V8/10
摘要： Wafers in a cassette are mapped without having to open the cassette. The cassette is at least partially transparent to a particular type of radiation. A source of the radiation is directed into the cassette, through a transparent or translucent part of the cassette, and an imaging sensor sensitive to the radiation detects radiation that is reflected off the wafers inside the cassette. A second source of radiation and a second camera preferably provide additional images of the wafers from a different angle. By processing these images, the spatial orientation of the wafers and loading status of the cassette can be determined.
摘要翻译：磁带盒中的晶片被映射，而不必打开磁带盒。该盒对于特定类型的辐射至少部分透明。辐射源通过盒的透明或半透明部分被引导到盒中，并且对辐射敏感的成像传感器检测从盒内的晶片反射的辐射。第二辐射源和第二照相机优选地从不同的角度提供晶片的附加图像。通过处理这些图像，可以确定晶片的空间取向和盒的装载状态。

56. 发明授权

US07144809B2 Production of elemental films using a boron-containing reducing agent 有权
公开(公告)号：US07144809B2
公开(公告)日：2006-12-05
申请号：US10990424
申请日：2004-11-16
申请人： Kai-Erik Elers , Ville Antero Saanila , Sari Johanna Kaipio , Pekka Juha Soininen
发明人： Kai-Erik Elers , Ville Antero Saanila , Sari Johanna Kaipio , Pekka Juha Soininen
IPC分类号： C23C16/08
CPC分类号： C23C16/0272 , C23C16/045 , C23C16/08 , C23C16/14 , C23C16/32 , C23C16/34 , C23C16/44 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45542 , C23C16/45553 , C23C16/45555 , C30B25/02 , C30B25/14 , C30B29/02 , C30B29/36 , C30B29/38 , H01L21/28562 , H01L21/28568 , H01L21/76807 , H01L21/76838 , H01L21/76843 , H01L21/76871 , H01L21/76876 , H01L21/76877 , H01L23/5226 , H01L23/53223 , H01L23/53228 , H01L23/53238 , H01L23/53242 , H01L23/53252 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates generally to depositing elemental thin films. In particular, the invention concerns a method of growing elemental metal thin films by Atomic Layer Deposition (ALD) using a boron compound as a reducing agent. In a preferred embodiment the method comprises introducing vapor phase pulses of at least one metal source compound and at least one boron source compound into a reaction space that contains a substrate on which the metal thin film is to be deposited. Preferably the boron compound is capable of reducing the adsorbed portion of the metal source compound into its elemental electrical state.

57. 发明授权

US07045406B2 Method of forming an electrode with adjusted work function 有权
标题翻译：形成具有调节功函数的电极的方法
公开(公告)号：US07045406B2
公开(公告)日：2006-05-16
申请号：US10430703
申请日：2003-05-05
申请人： Hannu Huotari , Suvi Haukka , Marko Tuominen
发明人： Hannu Huotari , Suvi Haukka , Marko Tuominen
IPC分类号： H01L21/28
CPC分类号： H01L21/28194 , H01L21/28088 , H01L21/823828 , H01L21/823842 , H01L29/4966 , H01L29/517
摘要： A method forms a gate stack for a semiconductor device with a desired work function of the gate electrode. The work function is adjusted by changing the overall electronegativity of the gate electrode material in the region that determines the work function of the gate electrode during the gate electrode deposition. The gate stack is deposited by an atomic layer deposition type process and the overall electronegativity of the gate electrode is tuned by introducing at least one pulse of an additional precursor to selected deposition cycles of the gate electrode. The tuning of the work function of the gate electrode can be done not only by introducing additional material into the gate electrode, but also by utilizing the effects of a graded mode deposition and thickness variations of the lower gate part of the gate electrode in combination with the effects that the incorporation of the additional material pulses offers.
摘要翻译：一种方法形成具有期望的栅电极功函数的半导体器件的栅堆叠。通过在栅电极沉积期间改变确定栅电极的功函数的区域中的栅极电极材料的总体电负性来调整功函数。通过原子层沉积型工艺沉积栅极堆叠，并通过向选择的栅电极的沉积循环引入附加前体的至少一个脉冲来调节栅电极的整体电负性。栅电极的功函数的调谐不仅可以通过向栅电极引入额外的材料，还可以通过利用栅电极的下栅极部分的分级模式淀积和厚度变化的结果与附加材料脉冲的结合提供的效果。

58. 发明授权

US07038284B2 Methods for making a dielectric stack in an integrated circuit 有权
公开(公告)号：US07038284B2
公开(公告)日：2006-05-02
申请号：US10653737
申请日：2003-09-02
申请人： Suvi P. Haukka , Jarmo Skarp , Marko Tuominen
发明人： Suvi P. Haukka , Jarmo Skarp , Marko Tuominen
IPC分类号： H01L29/76
CPC分类号： H01L21/3162 , C23C16/40 , C23C16/403 , C23C16/45529 , H01L21/02178 , H01L21/02189 , H01L21/02192 , H01L21/022 , H01L21/0228 , H01L21/02299 , H01L21/3142 , H01L21/31604 , H01L28/56 , Y10S977/891
摘要： An ultrathin aluminum oxide and lanthanide layers, particularly formed by an atomic layer deposition (ALD) type process, serve as interface layers between two or more materials. The interface layers can prevent oxidation of a substrate and can prevent diffusion of molecules between the materials. In the illustrated embodiments, a high-k dielectric material is sandwiched between two layers of aluminum oxide or lanthanide oxide in the formation of a transistor gate dielectric or a memory cell dielectric. Aluminum oxides can serve as a nucleation layer with less than a full monolayer of aluminum oxide. One monolayer or greater can also serve as a diffusion barrier, protecting the substrate from oxidation and the high-k dielectric from impurity diffusion. Nanolaminates can be formed with multiple alternating interface layers and high-k layers, where intermediate interface layers can break up the crystal structure of the high-k materials and lower leakage levels.

59. 发明授权

US07022627B2 Method for the heat treatment of substrates 失效
公开(公告)号：US07022627B2
公开(公告)日：2006-04-04
申请号：US10700298
申请日：2003-10-31
申请人： Ernst H. A. Granneman , Vladimir I. Kuznetsov , Xavier Pagès , Pascal G. Vermont
发明人： Ernst H. A. Granneman , Vladimir I. Kuznetsov , Xavier Pagès , Pascal G. Vermont
IPC分类号： H01L21/26
CPC分类号： H01L21/67109 , H01L21/324 , H01L21/6838
摘要： A substrate undergoes a semiconductor fabrication process at different temperatures in a reactor without changing the temperature of the reactor. The substrate is held suspended by flowing gas between two heated surfaces of the reactor. Moving the two heated surfaces in close proximity with the substrate for a particular time duration heats the substrate to a desired temperature. The desired temperature is then maintained by distancing the heated surfaces from the substrate and holding the heated surface at the increased distance to minimize further substrate heating.

60. 发明授权

US07018478B2 Method of growing a thin film onto a substrate 有权
标题翻译：在基片上生长薄膜的方法
公开(公告)号：US07018478B2
公开(公告)日：2006-03-28
申请号：US10893027
申请日：2004-07-16
申请人： Sven Lindfors , Pekka T. Soininen
发明人： Sven Lindfors , Pekka T. Soininen
IPC分类号： C30B25/14
CPC分类号： C30B25/14 , C23C16/4402 , C23C16/4482 , C23C16/45527 , C23C16/45544 , C23C16/45561 , Y10T117/1004 , Y10T117/1008
摘要： A method of growing a thin film onto a substrate placed in a reaction chamber according to the ALD method by subjecting the substrate to alternate and successive surface reactions. The method includes providing a first reactant source and providing an inactive gas source. A first reactant is fed from the first reactant source in the form of repeated alternating pulses to a reaction chamber via a first conduit. The first reactant is allowed to react with the surface of the substrate in the reaction chamber. Inactive gas is fed from the inactive gas source into the first conduit via a second conduit that is connected to the first conduit at a first connection point so as to create a gas phase barrier between the repeated alternating pulses of the first reactant entering the reaction chamber. The inactive gas is withdrawn from said first conduit via a third conduit connected to the first conduit at a second connection point.
摘要翻译：根据ALD方法将薄膜生长在放置在反应室中的基板上的方法是通过使基板经历交替的和连续的表面反应。该方法包括提供第一反应物源并提供惰性气体源。第一反应物以第一反应物源以重复的交替脉冲的形式通过第一导管进料至反应室。允许第一反应物与反应室中的基底表面反应。非活性气体通过第二导管从非活性气体源进入第一导管，第二导管在第一连接点处连接到第一导管，以便在进入反应室的第一反应物的重复交替脉冲之间产生气相屏障。非活性气体在第二连接点处经由连接到第一导管的第三导管从所述第一导管排出。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式