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1. 发明授权

US06783590B2 Method of growing a thin film onto a substrate 有权
公开(公告)号：US06783590B2
公开(公告)日：2004-08-31
申请号：US09835931
申请日：2001-04-16
申请人： Sven Lindfors , Pekka T. Soininen
发明人： Sven Lindfors , Pekka T. Soininen
IPC分类号： C30B2514
CPC分类号： C30B25/14 , C23C16/4402 , C23C16/4482 , C23C16/45527 , C23C16/45544 , C23C16/45561 , Y10T117/1004 , Y10T117/1008
摘要： A method of growing a thin film onto a substrate placed in a reaction chamber according to the ALD method by subjecting the substrate to alternate and successive surface reactions. The method includes providing a first reactant source and providing an inactive gas source. A first reactant is fed from the first reactant source in the form of repeated alternating pulses to a reaction chamber via a first conduit. The first reactant is allowed to react with the surface of the substrate in the reaction chamber. Inactive gas is fed from the inactive gas source into the first conduit via a second conduit that is connected to the first conduit at a first connection point so as to create a gas phase barrier between the repeated alternating pulses of the first reactant entering the reaction chamber. The inactive gas is withdrawn from said first conduit via a third conduit connected to the first conduit at a second connection point.

2. 发明授权

US07037372B2 Method of growing a thin film onto a substrate 有权
公开(公告)号：US07037372B2
公开(公告)日：2006-05-02
申请号：US10975578
申请日：2004-10-28
申请人： Sven Lindfors , Pekka T. Soininen
发明人： Sven Lindfors , Pekka T. Soininen
IPC分类号： C30B25/12
CPC分类号： C23C16/45525 , C23C16/45544 , C30B25/14
摘要： The present invention relates to the production of thin films. In particular, the invention concerns a method of growing a thin film onto a substrate, in which method the substrate is placed in a reaction chamber and is subjected to surface reactions of a plurality of vapor-phase reactants according to the ALD method. The present invention is based on replacing the mechanical valves conventionally used for regulating the pulsing of the reactants, which valves tend to wear and intrude metallic particles into the process flow, with an improved precursor dosing system. The invention is characterized by choking the reactant flow between the vapour-phase pulses while still allowing a minimum flow of said reactant, and redirecting the reactant at these times to an other destination than the reaction chamber. The redirection is performed with an inactive gas, which is also used for ventilating the reaction chamber between the vapour-phase pulses.

3. 发明授权

US07018478B2 Method of growing a thin film onto a substrate 有权
标题翻译：在基片上生长薄膜的方法
公开(公告)号：US07018478B2
公开(公告)日：2006-03-28
申请号：US10893027
申请日：2004-07-16
申请人： Sven Lindfors , Pekka T. Soininen
发明人： Sven Lindfors , Pekka T. Soininen
IPC分类号： C30B25/14
CPC分类号： C30B25/14 , C23C16/4402 , C23C16/4482 , C23C16/45527 , C23C16/45544 , C23C16/45561 , Y10T117/1004 , Y10T117/1008
摘要： A method of growing a thin film onto a substrate placed in a reaction chamber according to the ALD method by subjecting the substrate to alternate and successive surface reactions. The method includes providing a first reactant source and providing an inactive gas source. A first reactant is fed from the first reactant source in the form of repeated alternating pulses to a reaction chamber via a first conduit. The first reactant is allowed to react with the surface of the substrate in the reaction chamber. Inactive gas is fed from the inactive gas source into the first conduit via a second conduit that is connected to the first conduit at a first connection point so as to create a gas phase barrier between the repeated alternating pulses of the first reactant entering the reaction chamber. The inactive gas is withdrawn from said first conduit via a third conduit connected to the first conduit at a second connection point.
摘要翻译：根据ALD方法将薄膜生长在放置在反应室中的基板上的方法是通过使基板经历交替的和连续的表面反应。该方法包括提供第一反应物源并提供惰性气体源。第一反应物以第一反应物源以重复的交替脉冲的形式通过第一导管进料至反应室。允许第一反应物与反应室中的基底表面反应。非活性气体通过第二导管从非活性气体源进入第一导管，第二导管在第一连接点处连接到第一导管，以便在进入反应室的第一反应物的重复交替脉冲之间产生气相屏障。非活性气体在第二连接点处经由连接到第一导管的第三导管从所述第一导管排出。

4. 发明授权

US06881263B2 Method of growing a thin film onto a substrate 有权
标题翻译：在基片上生长薄膜的方法
公开(公告)号：US06881263B2
公开(公告)日：2005-04-19
申请号：US10333521
申请日：2001-07-20
申请人： Sven Lindfors , Pekka T. Soininen
发明人： Sven Lindfors , Pekka T. Soininen
IPC分类号： C23C16/44 , C23C16/455 , C30B25/14 , C30B25/04 , C30B25/02
CPC分类号： C23C16/45525 , C23C16/45544 , C30B25/14
摘要： The present invention relates to the production of thin films. In particular, the invention concerns a method of growing a thin film onto a substrate, in which method the substrate is placed in a reaction chamber and is subjected to surface reactions of a plurality of vapor-phase reactants according to the ALD method. The present invention is based on replacing the mechanical valves conventionally used for regulating the pulsing of the reactants, which valves tend to wear and intrude metallic particles into the process flow, with an improved precursor dosing system. The invention is characterized by choking the reactant flow between the vapour-phase pulses while still allowing a minimum flow of said reactant, and redirecting the reactant at these times to an other destination than the reaction chamber. The redirection is performed with an inactive gas, which is also used for ventilating the reaction chamber between the vapour-phase pulses.
摘要翻译：本发明涉及薄膜的制造。特别地，本发明涉及一种在衬底上生长薄膜的方法，其中将衬底放置在反应室中并根据ALD方法进行多种气相反应物的表面反应。本发明基于通过改进的前体给料系统来替换常规用于调节反应物的脉冲的机械阀，该阀倾向于磨损并将金属颗粒侵入工艺流程。本发明的特征在于阻止气相脉冲之间的反应物流动，同时仍然允许所述反应物的最小流动，并且将反应物在这些时间重定向到比反应室更多的目的地。重定向用惰性气体进行，惰性气体也用于在气相脉冲之间使反应室通风。

5. 发明授权

US10494718B2 Deposition reactor with plasma source 有权
公开(公告)号：US10494718B2
公开(公告)日：2019-12-03
申请号：US14110149
申请日：2011-04-07
申请人： Vaino Kilpi , Wei-Min Li , Timo Malinen , Juhana Kostamo , Sven Lindfors
发明人： Vaino Kilpi , Wei-Min Li , Timo Malinen , Juhana Kostamo , Sven Lindfors
IPC分类号： C23C16/455 , C23C16/40 , C23C16/458 , C23C16/50 , H01J37/32
CPC分类号： C23C16/45589 , C23C16/403 , C23C16/458 , C23C16/45536 , C23C16/45544 , C23C16/45582 , C23C16/50 , H01J37/32357 , H01J37/32449
摘要： A deposition reactor includes an in-feed part that defines an expansion space which leads reactants as a top to bottom flow from a plasma source towards a reaction chamber, the expansion space widening towards the reaction chamber, and a lifting mechanism for loading at least one substrate to the reaction chamber from the top side of the reaction chamber. The deposition reactor deposits material on the at least one substrate in the reaction chamber by sequential self-saturating surface reactions.

6. 发明申请

US20140335267A1 ATOMIC LAYER DEPOSITION REACTOR FOR PROCESSING A BATCH OF SUBSTRATES AND METHOD THEREOF 审中-公开
标题翻译：用于处理基板批号的原子层沉积反应器及其方法
公开(公告)号：US20140335267A1
公开(公告)日：2014-11-13
申请号：US14359775
申请日：2011-11-22
申请人： Sven Lindfors , Pekka J Soininen
发明人： Sven Lindfors , Pekka J Soininen
IPC分类号： C23C30/00
CPC分类号： C23C30/00 , C23C16/45546 , H01L31/1876 , Y02E10/50 , Y02P70/521
摘要： The invention relates to a method that includes providing a reaction chamber module of an atomic layer deposition reactor for processing a batch of substrates by an atomic layer deposition process, and loading the batch of substrates before processing into the reaction chamber module via a different route than the batch of substrates is unloaded after processing. The invention also relates to a corresponding apparatus.
摘要翻译：本发明涉及一种方法，其包括提供原子层沉积反应器的反应室模块，用于通过原子层沉积工艺处理一批衬底，并通过不同的途径在处理之前将批次的衬底加载到反应室模块中该批次的基材在加工后卸载。本发明还涉及相应的装置。

7. 发明授权

US08741062B2 Apparatus and methods for deposition reactors 有权
标题翻译：沉积反应器的装置和方法
公开(公告)号：US08741062B2
公开(公告)日：2014-06-03
申请号：US12148885
申请日：2008-04-22
申请人： Sven Lindfors , Pekka J. Soininen
发明人： Sven Lindfors , Pekka J. Soininen
IPC分类号： C23C16/455 , C23C16/52 , H01L21/306 , C23F1/00 , C23C16/06 , C23C16/22
CPC分类号： F16L53/00 , C23C16/4485 , C23C16/45544 , C23C16/45553 , C23C16/45561 , Y10T137/6416
摘要： An apparatus, such as an ALD (Atomic Layer Deposition) apparatus, including a precursor source configured for depositing material on a heated substrate in a deposition reactor by sequential self-saturating surface reactions. The apparatus includes an in-feed line for feeding precursor vapor from the precursor source to a reaction chamber and a structure configured for utilizing heat from a reaction chamber heater for preventing condensation of precursor vapor into liquid or solid phase between the precursor source and the reaction chamber. Also various other apparatus and methods are presented.
摘要翻译：一种诸如ALD（原子层沉积）装置的装置，包括被配置用于通过连续的自饱和表面反应在沉积反应器中在加热的衬底上沉积材料的前体源。该装置包括用于将前体蒸气从前体源供给到反应室的进料管线和被配置为利用来自反应室加热器的热量以防止前体蒸气冷凝到前体源和反应器之间的液体或固相的结构房间。还提出了各种其他装置和方法。

8. 发明授权

US08282334B2 Atomic layer deposition apparatus and loading methods 有权
标题翻译：原子层沉积装置及装载方法
公开(公告)号：US08282334B2
公开(公告)日：2012-10-09
申请号：US12221268
申请日：2008-08-01
申请人： Sven Lindfors , Juha A. Kustaa-Adolf Poutiainen
发明人： Sven Lindfors , Juha A. Kustaa-Adolf Poutiainen
IPC分类号： H01L21/677
CPC分类号： C23C16/45546 , C23C16/4401 , H01L21/67126 , H01L21/6719 , H01L21/67207 , H01L21/67742 , H01L21/67757
摘要： The invention relates to methods and apparatus in which a plurality of ALD reactors are placed in a pattern in relation to each other, each ALD reactor being configured to receive a batch of substrates for ALD processing, and each ALD reactor comprising a reaction chamber accessible from the top. A plurality of loading sequences is performed with a loading robot. Each loading sequence comprises picking up a substrate holder carrying a batch of substrates in a storage area or shelf, and moving said substrate holder with said batch of substrates into the reaction chamber of the ALD reactor in question.
摘要翻译：本发明涉及其中多个ALD反应器相对于彼此以图案放置的方法和设备，每个ALD反应器被配置为接收一批用于ALD处理的基底，并且每个ALD反应器包括可从顶端。使用装载机器人执行多个加载顺序。每个加载顺序包括拾取在存储区域或搁板中承载一批基板的基板保持器，以及将所述基板保持器与所述一批基板移动到所讨论的ALD反应器的反应室中。

9. 发明授权

US08211235B2 Apparatuses and methods for deposition of material on surfaces 有权
标题翻译：在表面上沉积材料的装置和方法
公开(公告)号：US08211235B2
公开(公告)日：2012-07-03
申请号：US11073052
申请日：2005-03-04
申请人： Sven Lindfors , Juha Allan Kustaa-Adolf Poutiainen
发明人： Sven Lindfors , Juha Allan Kustaa-Adolf Poutiainen
IPC分类号： C23C16/00 , C23C16/458 , C23C16/46
CPC分类号： C23C16/45546 , C23C16/45525 , C23C16/45578 , C23C16/4583 , C23C16/52
摘要： An apparatus for depositing conformal thin films by sequential self saturating chemical reactions on heated surfaces is disclosed. The apparatus comprises a movable single or dual-lid system that has a substrate holder attached to a reaction chamber lid. In other embodiments, the apparatus comprises an exhaust flow plug, a gas distribution insert, a local heater or a minibatch system. Various methods suitable for ALD (Atomic Layer Deposition) are also enclosed.
摘要翻译：公开了一种用于通过在加热表面上的顺序自饱和化学反应沉积保形薄膜的装置。该装置包括可移动单盖或双盖系统，其具有附接到反应室盖的基板保持架。在其他实施例中，该装置包括排气流塞，气体分配插入件，局部加热器或小型系统。还包括适用于ALD（原子层沉积）的各种方法。

10. 发明申请

US20090181169A1 METHOD FOR GROWING THIN FILMS 失效
标题翻译：生长薄膜的方法
公开(公告)号：US20090181169A1
公开(公告)日：2009-07-16
申请号：US12361139
申请日：2009-01-28
申请人： Tuomo Suntola , Sven Lindfors
发明人： Tuomo Suntola , Sven Lindfors
IPC分类号： C23C16/44
CPC分类号： C23C16/45525 , C23C16/455 , C23C16/45527 , C23C16/45546 , C30B25/10 , C30B25/14
摘要： The invention relates to a method and apparatus for growing a thin film onto a substrate, in which method a substrate placed in a reaction space (21) is subjected to alternately repeated surface reactions of at least two vapor-phase reactants for the purpose of forming a thin film. According to the method, said reactants are fed in the form of vapor-phase pulses repeatedly and alternately, each reactant separately from its own source, into said reaction space (21), and said vapor-phase reactants are brought to react with the surface of the substrate for the purpose of forming a solid-state thin film compound on said substrate. According to the invention, the gas volume of said reaction space is evacuated by means of a vacuum pump essentially totally between two successive vapor-phase reactant pulses. By virtue of transporting the different starting material species at different times through the apparatus effectively isolates the starting materials from each other thus preventing their premature mutual reactions.
摘要翻译：本发明涉及一种用于将薄膜生长到基底上的方法和装置，其中放置在反应空间（21）中的基底经受至少两种气相反应物的交替重复的表面反应，以形成一个薄膜。根据该方法，所述反应物以气相脉冲的形式反复地且交替地以每种反应物与其自身源分开进入所述反应空间（21），并使所述气相反应物与表面反应的基板，用于在所述基板上形成固态薄膜化合物。根据本发明，通过基本上完全在两个连续的气相反应物脉冲之间的真空泵将所述反应空间的气体体积抽真空。由于通过装置在不同时间运送不同的起始物质，有效地将原料彼此隔离，从而防止其过早的相互反应。

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