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1. 发明授权

US08809195B2 Etching high-k materials 有权
标题翻译：蚀刻高k材料
公开(公告)号：US08809195B2
公开(公告)日：2014-08-19
申请号：US12254652
申请日：2008-10-20
申请人： Kai-Erik Elers
发明人： Kai-Erik Elers
IPC分类号： H01L21/302
CPC分类号： H01L21/31122
摘要： A dry etch method, apparatus, and system for etching a high-k material comprises sequentially contacting the high-k material with a vapor phase reducing agent, and a volatilizing etchant in a cyclical process. In some preferred embodiments, the reducing agent and/or volatilizing etchant is plasma activated. Control over etch rate and/or selectivity are improved by the pulsed process, where, in some embodiments, each step in the cyclical process has a self-limited extent of etching. Embodiments of the method are useful in the fabrication of integrated devices, as well as for cleaning process chambers.
摘要翻译：用于蚀刻高k材料的干蚀刻方法，设备和系统包括在循环过程中依次使高k材料与气相还原剂和挥发性蚀刻剂接触。在一些优选的实施方案中，还原剂和/或挥发腐蚀剂是等离子体活化的。通过脉冲过程改善了蚀刻速率和/或选择性的控制，其中在一些实施例中，循环过程中的每个步骤具有自限制的蚀刻程度。该方法的实施例在集成装置的制造以及清洁处理室中是有用的。

2. 发明授权

US07598170B2 Plasma-enhanced ALD of tantalum nitride films 有权
标题翻译：氮化钽膜的等离子体增强ALD
公开(公告)号：US07598170B2
公开(公告)日：2009-10-06
申请号：US11627749
申请日：2007-01-26
申请人： Kai-Erik Elers
发明人： Kai-Erik Elers
IPC分类号： H01L21/44
CPC分类号： C23C16/34 , C23C16/4554
摘要： Methods of controllably producing conductive tantalum nitride films are provided. The methods comprise contacting a substrate in a reaction space with alternating and sequential pulses of a tantalum source material, plasma-excited species of hydrogen and nitrogen source material. The plasma-excited species of hydrogen reduce the oxidation state of tantalum, thereby forming a substantially conductive tantalum nitride film over the substrate. In some embodiments, the plasma-excited species of hydrogen react with and removes halide residues in a deposited metallic film.
摘要翻译：提供可控制造导电氮化钽膜的方法。所述方法包括使反应空间中的衬底与钽源材料，等离子体激发的氢和氮源材料的交替和顺序脉冲接触。氢等离子体激发的物质降低钽的氧化态，从而在衬底上形成基本导电的氮化钽膜。在一些实施方案中，氢等离子体激发的物质与沉积的金属膜中的卤化物残留物反应并除去其中的残留物。

3. 发明申请

US20080102204A1 Vapor deposition of metal carbide films 有权
标题翻译：金属碳化物膜的气相沉积
公开(公告)号：US20080102204A1
公开(公告)日：2008-05-01
申请号：US11591845
申请日：2006-11-01
申请人： Kai-Erik Elers
发明人： Kai-Erik Elers
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： C23C16/32 , C23C16/45527 , C23C16/45534 , C23C16/45542
摘要： Methods of forming metal carbide thin films are provided. According to preferred embodiments, metal carbide thin films are formed in an atomic layer deposition (ALD) process by alternately and sequentially contacting a substrate in a reaction space with spatially and temporally separated vapor phase pulses of a metal source chemical, a reducing agent and a carbon source chemical. The reducing agent is preferably selected from the group consisting of excited species of hydrogen and silicon-containing compounds.
摘要翻译：提供了形成金属碳化物薄膜的方法。根据优选实施例，通过交替地和顺序地将反应空间中的衬底与金属源化学品，还原剂和还原剂的空间和时间分离的气相脉冲交替地和顺序地接触，在原子层沉积（ALD）工艺中形成金属碳化物薄膜碳源化学品。还原剂优选选自氢和含硅化合物的激发物质。

4. 发明申请

US20070096321A1 Conformal lining layers for damascene metallization 有权
标题翻译：用于镶嵌金属化的保形衬层
公开(公告)号：US20070096321A1
公开(公告)日：2007-05-03
申请号：US11511877
申请日：2006-08-28
申请人： Ivo Raaijmakers , Suvi Haukka , Ville Saanila , Pekka Soininen , Kai-Erik Elers , Ernst Granneman
发明人： Ivo Raaijmakers , Suvi Haukka , Ville Saanila , Pekka Soininen , Kai-Erik Elers , Ernst Granneman
IPC分类号： H01L23/52 , H01L23/48 , H01L29/40
CPC分类号： C23C16/45525 , C23C16/0272 , C23C16/045 , C23C16/08 , C23C16/14 , C23C16/32 , C23C16/34 , C23C16/44 , C23C16/45534 , C23C16/45536 , C30B25/02 , C30B29/02 , C30B29/36 , H01L21/28562 , H01L21/7681 , H01L21/76814 , H01L21/76843 , H01L21/76846 , H01L21/76873 , H01L23/5226 , H01L23/53223 , H01L23/53238 , H01L23/53242 , H01L23/53252 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Method and structures are provided for conformal lining of dual damascene structures in integrated circuits. Trenches and contact vias are formed in insulating layers. The trenches and vias are exposed to alternating chemistries to form monolayers of a desired lining material. Exemplary process flows include alternately pulsed metal halide and ammonia gases injected into a constant carrier flow. Self-terminated metal layers are thus reacted with nitrogen. Near perfect step coverage allows minimal thickness for a diffusion barrier function, thereby maximizing the volume of a subsequent filling metal for any given trench and via dimensions.
摘要翻译：提供了集成电路中双镶嵌结构的保形衬里的方法和结构。沟槽和接触通孔形成在绝缘层中。沟槽和通孔暴露于交替的化学物质以形成所需衬里材料的单层。示例性工艺流程包括交替脉冲的金属卤化物和注入恒定载流子的氨气。自身端接的金属层因此与氮气反应。接近完美的台阶覆盖允许扩散阻挡功能的最小厚度，从而使任何给定沟槽和通孔尺寸的后续填充金属的体积最大化。

5. 发明申请

US20070026540A1 Method of forming non-conformal layers 有权
标题翻译：形成非保形层的方法
公开(公告)号：US20070026540A1
公开(公告)日：2007-02-01
申请号：US11375588
申请日：2006-03-13
申请人： Sebastian Nooten , Jan Maes , Steven Marcus , Glen Wilk , Petri Raisanen , Kai-Erik Elers
发明人： Sebastian Nooten , Jan Maes , Steven Marcus , Glen Wilk , Petri Raisanen , Kai-Erik Elers
IPC分类号： H01L21/00 , B05C11/00 , C23C16/00 , H01L21/31
CPC分类号： H01J37/32082 , C23C16/045 , C23C16/403 , C23C16/448 , C23C16/45519 , C23C16/45525 , C23C16/45542 , C23C16/45565 , C23C16/50 , C23C16/5096 , C23C16/52 , H01J37/3244 , H01J37/32935 , H01L21/02178 , H01L21/02274 , H01L21/0228 , H01L21/3141 , H01L21/3162 , H01L29/66181
摘要： In one aspect, non-conformal layers are formed by variations of plasma enhanced atomic layer deposition, where one or more of pulse duration, separation, RF power on-time, reactant concentration, pressure and electrode spacing are varied from true self-saturating reactions to operate in a depletion-effect mode. Deposition thus takes place close to the substrate surface but is controlled to terminate after reaching a specified distance into openings (e.g., deep DRAM trenches, pores, etc.). Reactor configurations that are suited to such modulation include showerhead, in situ plasma reactors, particularly with adjustable electrode spacing. In another aspect, alternately and sequentially contacting a substrate, the substrate including openings, with at least two different reactants, wherein an under-saturated dose of at least one of the reactants has been predetermined and the under-saturated dose is provided uniformly across the substrate surface, deposits a film that less than fully covers surfaces of the openings, leading to depletion effects in less accessible regions on the substrate surface
摘要翻译：在一个方面，通过等离子体增强原子层沉积的变化形成非共形层，其中脉冲持续时间，分离，RF功率导通时间，反应物浓度，压力和电极间距中的一个或多个从真实的自饱和反应变化以耗尽效应模式运行。因此，沉积物靠近基底表面发生，但是在到达开口（例如，深的DRAM沟槽，孔隙等）中的特定距离之后被控制终止。适用于这种调制的反应器配置包括喷头，原位等离子体反应器，特别是具有可调节的电极间距。在另一方面，交替地和顺序地接触基底，包括开口的基底与至少两种不同的反应物接触，其中至少一种反应物的饱和剂量已被预先确定，并且不饱和剂量被均匀地提供在衬底表面沉积小于完全覆盖开口表面的膜，导致在衬底表面上较不易接近的区域中的耗尽效应

6. 发明授权

US07144809B2 Production of elemental films using a boron-containing reducing agent 有权
公开(公告)号：US07144809B2
公开(公告)日：2006-12-05
申请号：US10990424
申请日：2004-11-16
申请人： Kai-Erik Elers , Ville Antero Saanila , Sari Johanna Kaipio , Pekka Juha Soininen
发明人： Kai-Erik Elers , Ville Antero Saanila , Sari Johanna Kaipio , Pekka Juha Soininen
IPC分类号： C23C16/08
CPC分类号： C23C16/0272 , C23C16/045 , C23C16/08 , C23C16/14 , C23C16/32 , C23C16/34 , C23C16/44 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45542 , C23C16/45553 , C23C16/45555 , C30B25/02 , C30B25/14 , C30B29/02 , C30B29/36 , C30B29/38 , H01L21/28562 , H01L21/28568 , H01L21/76807 , H01L21/76838 , H01L21/76843 , H01L21/76871 , H01L21/76876 , H01L21/76877 , H01L23/5226 , H01L23/53223 , H01L23/53228 , H01L23/53238 , H01L23/53242 , H01L23/53252 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates generally to depositing elemental thin films. In particular, the invention concerns a method of growing elemental metal thin films by Atomic Layer Deposition (ALD) using a boron compound as a reducing agent. In a preferred embodiment the method comprises introducing vapor phase pulses of at least one metal source compound and at least one boron source compound into a reaction space that contains a substrate on which the metal thin film is to be deposited. Preferably the boron compound is capable of reducing the adsorbed portion of the metal source compound into its elemental electrical state.

7. 发明授权

US07034397B2 Oxygen bridge structures and methods to form oxygen bridge structures 有权
标题翻译：氧桥结构和形成氧桥结构的方法
公开(公告)号：US07034397B2
公开(公告)日：2006-04-25
申请号：US10696244
申请日：2003-10-28
申请人： Ivo Raaijmakers , Pekka J. Soininen , Kai-Erik Elers
发明人： Ivo Raaijmakers , Pekka J. Soininen , Kai-Erik Elers
IPC分类号： H01L23/48 , H01L21/4763
CPC分类号： H01L21/76846 , C23C16/0272 , H01L21/28562 , H01L21/32051 , H01L21/76856 , H01L21/76879 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method is proposed for improving the adhesion between a diffusion barrier film and a metal film. Both the diffusion barrier film and the metal film can be deposited in either sequence onto a semiconductor substrate. A substrate comprising a first film, which is one of a diffusion barrier film or a metal film, with the first film being exposed at least at part of the surface area of the substrate, is exposed to an oxygen-containing reactant to create a surface termination of about one monolayer of oxygen-containing groups or oxygen atoms on the exposed parts of the first film. Then the second film, which is the other one of a diffusion barrier film and a metal film, is deposited onto the substrate. Furthermore, an oxygen bridge structure is proposed, the structure comprising a diffusion barrier film and a metal film having an interface with the diffusion barrier film, wherein the interface comprises a monolayer of oxygen atoms.
摘要翻译：提出了改善扩散阻挡膜和金属膜之间的粘合性的方法。扩散阻挡膜和金属膜都可以以任一顺序沉积到半导体衬底上。包含第一膜，其是扩散阻挡膜或金属膜之一，其中第一膜至少部分地暴露于基底的表面区域，以暴露于含氧反应物以形成表面在第一膜的暴露部分上终止约一个单层的含氧基团或氧原子。然后将作为扩散阻挡膜和金属膜中的另一个的第二膜沉积在基板上。此外，提出了氧桥结构，其结构包括扩散阻挡膜和与扩散阻挡膜具有界面的金属膜，其中界面包括单层氧原子。

8. 发明授权

US06921712B2 Process for producing integrated circuits including reduction using gaseous organic compounds 有权
标题翻译：使用气态有机化合物制造集成电路的方法
公开(公告)号：US06921712B2
公开(公告)日：2005-07-26
申请号：US10276663
申请日：2001-05-15
申请人： Pekka Juha Soininen , Kai-Erik Elers
发明人： Pekka Juha Soininen , Kai-Erik Elers
IPC分类号： H01L21/285 , H01L21/3105 , H01L21/3205 , H01L21/768 , H01L21/44
CPC分类号： H01L21/76843 , H01L21/02068 , H01L21/28562 , H01L21/3105 , H01L21/321 , H01L21/76807 , H01L21/76814 , H01L21/76823 , H01L21/76831 , H01L21/76834 , H01L21/76838 , H01L21/76861 , H01L21/76862 , H01L21/76873 , H01L21/76883 , H01L21/76886 , H01L2224/32245 , H01L2224/45147 , H01L2224/48247 , H01L2924/00011 , H01L2924/12044 , H01L2924/00 , H01L2924/01005
摘要： This invention concerns a process for producing integrated circuits containing at least one layer of elemental metal which during the processing of the integrated circuit is at least partly in the form of metal oxide, and the use of an organic compound containing certain functional groups for the reduction of a metal oxide layer formed during the production of an integrated circuit. According to the present process the metal oxide layer is at least partly reduced to elemental metal with a reducing agent selected from organic compounds containing one or more of the following functional groups: alcohol (—OH), aldehyde (—CHO), and carboxylic acid (—COOH).
摘要翻译：本发明涉及一种制造集成电路的方法，该集成电路包含至少一层元素金属，其在集成电路的处理期间至少部分为金属氧化物的形式，并且使用含有某些官能团的有机化合物进行还原在制造集成电路期间形成的金属氧化物层。根据本发明方法，金属氧化物层至少部分还原成还原剂，还原剂选自含有一个或多个下列官能团的有机化合物：醇（-OH），醛（-CHO）和羧酸（-COOH）。

9. 发明授权

US06887795B2 Method of growing electrical conductors 有权
标题翻译：生长电导体的方法
公开(公告)号：US06887795B2
公开(公告)日：2005-05-03
申请号：US10300169
申请日：2002-11-19
申请人： Pekka J. Soininen , Kai-Erik Elers , Suvi Haukka
发明人： Pekka J. Soininen , Kai-Erik Elers , Suvi Haukka
IPC分类号： H01L21/285 , H01L21/3105 , H01L21/3205 , H01L21/768 , H01L21/302 , H01L21/461
CPC分类号： H01L21/76843 , H01L21/02068 , H01L21/28562 , H01L21/3105 , H01L21/321 , H01L21/76807 , H01L21/76814 , H01L21/76823 , H01L21/76831 , H01L21/76834 , H01L21/76838 , H01L21/76861 , H01L21/76862 , H01L21/76873 , H01L21/76883 , H01L21/76886 , H01L2224/32245 , H01L2224/45147 , H01L2224/48247 , H01L2924/00011 , H01L2924/12044 , H01L2924/00 , H01L2924/01005
摘要： This invention relates to manufacturing of integrated circuits (ICs) and especially conductive layers suitable for use in an IC. According to the preferred method a metal oxide thin film is deposited on a substrate surface and reduced thereafter essentially into a metallic form with an organic reducing agent. The metal oxide is preferably deposited according to the principles of atomic layer deposition (ALD) using a metal source chemical and an oxygen source chemical. The reduction step is preferably carried out in an ALD reactor using one or more vaporized organic compounds that contain at least one functional group selected from the group consisting of —OH, —CHO and —COOH.
摘要翻译：本发明涉及集成电路（IC）的制造，特别是适用于IC中的导电层。根据优选的方法，将金属氧化物薄膜沉积在基材表面上，然后用有机还原剂基本上还原成金属形式。金属氧化物优选根据原子层沉积（ALD）的原理使用金属源化学品和氧源化学品沉积。还原步骤优选在ALD反应器中使用一种或多种含有至少一种选自-OH，-CHO和-COOH的官能团的汽化有机化合物进行。

10. 发明授权

US06878628B2 In situ reduction of copper oxide prior to silicon carbide deposition 有权
标题翻译：在碳化硅沉积之前原位还原氧化铜
公开(公告)号：US06878628B2
公开(公告)日：2005-04-12
申请号：US09975466
申请日：2001-10-09
申请人： Auguste J. L. Sophie , Hessel Sprey , Pekka J. Soininen , Kai-Erik Elers
发明人： Auguste J. L. Sophie , Hessel Sprey , Pekka J. Soininen , Kai-Erik Elers
IPC分类号： H01L21/285 , H01L21/3105 , H01L21/3205 , H01L21/768 , H01L21/44 , B05D5/12
CPC分类号： H01L21/76829 , H01L21/02074 , H01L21/02126 , H01L21/02167 , H01L21/02301 , H01L21/7681 , H01L21/76883
摘要： The invention relates generally to improved silicon carbide deposition during dual damascene processing. In one aspect of the invention, copper oxide present on a substrate is reduced at least partially to copper prior to deposition of a silicon carbide or silicon oxycarbide layer thereon. In the preferred embodiment the reduction is accomplished by contacting the substrate with one or more organic reducing agents. The reduction process may be carried out in situ, in the same reaction chamber as subsequent processing steps. Alternatively, it may be carried out in a module of a cluster tool.
摘要翻译：本发明一般涉及在双镶嵌加工过程中改进的碳化硅沉积。在本发明的一个方面，在其上沉积碳化硅或碳氧化硅层之前，存在于基底上的氧化铜至少部分地被还原成铜。在优选的实施方案中，通过使底物与一种或多种有机还原剂接触来实现还原。还原过程可以在与后续处理步骤相同的反应室中原位进行。或者，它可以在集群工具的模块中执行。

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