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1. 发明授权

US07038284B2 Methods for making a dielectric stack in an integrated circuit 有权
公开(公告)号：US07038284B2
公开(公告)日：2006-05-02
申请号：US10653737
申请日：2003-09-02
申请人： Suvi P. Haukka , Jarmo Skarp , Marko Tuominen
发明人： Suvi P. Haukka , Jarmo Skarp , Marko Tuominen
IPC分类号： H01L29/76
CPC分类号： H01L21/3162 , C23C16/40 , C23C16/403 , C23C16/45529 , H01L21/02178 , H01L21/02189 , H01L21/02192 , H01L21/022 , H01L21/0228 , H01L21/02299 , H01L21/3142 , H01L21/31604 , H01L28/56 , Y10S977/891
摘要： An ultrathin aluminum oxide and lanthanide layers, particularly formed by an atomic layer deposition (ALD) type process, serve as interface layers between two or more materials. The interface layers can prevent oxidation of a substrate and can prevent diffusion of molecules between the materials. In the illustrated embodiments, a high-k dielectric material is sandwiched between two layers of aluminum oxide or lanthanide oxide in the formation of a transistor gate dielectric or a memory cell dielectric. Aluminum oxides can serve as a nucleation layer with less than a full monolayer of aluminum oxide. One monolayer or greater can also serve as a diffusion barrier, protecting the substrate from oxidation and the high-k dielectric from impurity diffusion. Nanolaminates can be formed with multiple alternating interface layers and high-k layers, where intermediate interface layers can break up the crystal structure of the high-k materials and lower leakage levels.

2. 发明授权

US06660660B2 Methods for making a dielectric stack in an integrated circuit 有权
标题翻译：在集成电路中制作电介质叠层的方法
公开(公告)号：US06660660B2
公开(公告)日：2003-12-09
申请号：US09945463
申请日：2001-08-31
申请人： Suvi P. Haukka , Marko Tuominen
发明人： Suvi P. Haukka , Marko Tuominen
IPC分类号： H01L2131
CPC分类号： H01L21/3162 , C23C16/40 , C23C16/403 , C23C16/45529 , H01L21/02178 , H01L21/02189 , H01L21/02192 , H01L21/022 , H01L21/0228 , H01L21/02299 , H01L21/3142 , H01L21/31604 , H01L28/56 , Y10S977/891
摘要： An ultrathin aluminum oxide and lanthanide layers, particularly formed by an atomic layer deposition (ALD) type process, serve as interface layers between two or more materials. The interface layers can prevent oxidation of a substrate and can prevent diffusion of molecules between the materials. In the illustrated embodiments, a high-k dielectric material is sandwiched between two layers of aluminum oxide or lanthanide oxide in the formation of a transistor gate dielectric or a memory cell dielectric. Aluminum oxides can serve as a nucleation layer with less than a full monolayer of aluminum oxide. One monolayer or greater can also serve as a diffusion barrier, protecting the substrate from oxidation and the high-k dielectric from impurity diffusion. Nanolaminates can be formed with multiple alternating interface layers and high-k layers, where intermediate interface layers can break up the crystal structure of the high-k materials and lower leakage levels.
摘要翻译：特别是通过原子层沉积（ALD）型方法形成的超薄氧化铝和镧系元素层用作两种或多种材料之间的界面层。界面层可以防止基底的氧化并且可以防止分子在材料之间的扩散。在所示实施例中，在形成晶体管栅极电介质或存储单元电介质时，高k介电材料夹在两层氧化铝或镧系元素氧化物之间。氧化铝可用作具有少于全部氧化铝单层的成核层。一个或多个单层也可以用作扩散阻挡层，保护基底免受氧化和高k电介质的杂质扩散。纳米材料可以形成多个交替界面层和高k层，其中中间界面层可以分解高k材料的晶体结构并降低泄漏水平。

3. 发明授权

US07704896B2 Atomic layer deposition of thin films on germanium 有权
标题翻译：原子层沉积在锗上的薄膜
公开(公告)号：US07704896B2
公开(公告)日：2010-04-27
申请号：US11336621
申请日：2006-01-20
申请人： Suvi P. Haukka , Marko Tuominen , Antti Rahtu
发明人： Suvi P. Haukka , Marko Tuominen , Antti Rahtu
IPC分类号： H01L21/31
CPC分类号： H01L21/0228 , C23C16/0272 , C23C16/45525 , C23C16/45531 , H01L21/02175 , H01L21/28158 , H01L21/28255 , H01L21/3141 , H01L21/31616 , H01L21/31641 , H01L21/31645 , H01L29/518
摘要： Germanium has higher mobility than silicon and therefore is considered to be a good alternative semiconductor for CMOS technology. Surface treatments a can facilitate atomic layer deposition (ALD) of thin films, such as high-k dielectric layers, on germanium substrates. Surface treatment can comprise the formation of a thin layer of GeOx or GeOxNy. After surface treatment and prior to deposition of the desired thin film, a passivation layer may be deposited on the substrate. The passivation layer may be, for example, a metal oxide layer deposited by ALD.
摘要翻译：锗具有比硅更高的迁移率，因此被认为是用于CMOS技术的良好替代半导体。表面处理a可以促进在锗衬底上的诸如高k电介质层的薄膜的原子层沉积（ALD）。表面处理可以包括GeO x或GeO x N y的薄层的形成。在表面处理之后并且在沉积所需的薄膜之前，可以在衬底上沉积钝化层。钝化层可以是例如由ALD沉积的金属氧化物层。

4. 发明授权

US06492283B2 Method of forming ultrathin oxide layer 有权
标题翻译：形成超薄氧化层的方法
公开(公告)号：US06492283B2
公开(公告)日：2002-12-10
申请号：US09791167
申请日：2001-02-22
申请人： Ivo Raaijmakers , Yong-Bae Kim , Marko Tuominen , Suvi P. Haukka
发明人： Ivo Raaijmakers , Yong-Bae Kim , Marko Tuominen , Suvi P. Haukka
IPC分类号： H01L2131
CPC分类号： H01L21/28194 , H01L21/02049 , H01L21/02052 , H01L21/02238 , H01L21/02255 , H01L21/02299 , H01L21/02359 , H01L21/28167 , H01L21/28211 , H01L21/31662 , H01L29/517 , Y10S438/906
摘要： A method is disclosed for forming an ultrathin oxide layer of uniform thickness. The method is particularly advantageous for producing uniformly thin interfacial oxides beneath materials of high dielectric permittivity, or uniformly thin passivation oxides. Hydrofluoric (HF) etching of a silicon surface, for example, is followed by termination of the silicon surface with ligands larger than H or F, particularly hydroxyl, alkoxy or carboxylic tails. The substrate is oxidized with the surface termination in place. The surface termination and relatively low temperatures moderate the rate of oxidation, such that a controllable thickness of oxide is formed. In some embodiments, the ligand termination is replaced with OH prior to further deposition. The deposition preferably includes alternating, self-limiting chemistries in an atomic layer deposition process, though any other suitable deposition process can be used. Two or more of the HF etching, surface termination, oxidation, hydroxyl replacement of the surface termination and deposition on the oxide can be conducted in situ.
摘要翻译：公开了形成均匀厚度的超薄氧化物层的方法。该方法特别有利于在高介电常数材料或均匀薄的钝化氧化物材料下制备均匀的薄界面氧化物。例如，硅表面的氢氟酸（HF）蚀刻之后，用大于H或F的配体，特别是羟基，烷氧基或羧酸尾部的配位体终止硅表面。衬底被氧化，表面终止就位。表面终止和相对低的温度调节氧化速率，使得形成可控的氧化物厚度。在一些实施方案中，在进一步沉积之前，将配体终止物用OH代替。沉积优选地包括在原子层沉积工艺中的交替的自限制化学，尽管可以使用任何其它合适的沉积工艺。 HF蚀刻，表面终止，氧化，羟基取代表面终止和沉积在氧化物上的两个或多个可以原位进行。

5. 发明授权

US08956971B2 Selective formation of metallic films on metallic surfaces 有权
标题翻译：在金属表面上选择性地形成金属膜
公开(公告)号：US08956971B2
公开(公告)日：2015-02-17
申请号：US13702992
申请日：2011-06-10
申请人： Suvi P. Haukka , Antti Niskanen , Marko Tuominen
发明人： Suvi P. Haukka , Antti Niskanen , Marko Tuominen
IPC分类号： H01L21/44 , H01L21/02 , C23C16/02 , C23C16/14 , C23C16/455 , H01L21/285 , H01L21/768
CPC分类号： H01L21/7685 , C23C16/0227 , C23C16/14 , C23C16/45525 , H01L21/02068 , H01L21/02697 , H01L21/28562 , H01L21/32051 , H01L21/32053 , H01L21/76826 , H01L21/76829 , H01L21/76838 , H01L21/76849 , H01L21/76883
摘要： Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a layer or adsorbed species on the first surface and is subsequently reacted or converted to form a metallic layer. Preferably the deposition temperature is selected such that a selectivity of above about 90% is achieved.
摘要翻译：金属层可以相对于基板的第二表面选择性地沉积在基板的表面上。在优选实施例中，金属层选择性地沉积在铜上，而不是绝缘或介电材料。在优选的实施方案中，第一前体在第一表面上形成层或吸附的物质，随后反应或转化以形成金属层。优选选择沉积温度使得达到高于约90％的选择性。

6. 发明授权

US06794314B2 Method of forming ultrathin oxide layer 有权
标题翻译：形成超薄氧化层的方法
公开(公告)号：US06794314B2
公开(公告)日：2004-09-21
申请号：US10281418
申请日：2002-10-25
申请人： Ivo Raaijmakers , Yong-Bae Kim , Marko Tuominen , Suvi P. Haukka
发明人： Ivo Raaijmakers , Yong-Bae Kim , Marko Tuominen , Suvi P. Haukka
IPC分类号： H01L2131
CPC分类号： H01L21/28194 , H01L21/02049 , H01L21/02052 , H01L21/02238 , H01L21/02255 , H01L21/02299 , H01L21/02359 , H01L21/28167 , H01L21/28211 , H01L21/31662 , H01L29/517 , Y10S438/906
摘要： A method is disclosed for forming an ultrathin oxide layer of uniform thickness. The method is particularly advantageous for producing uniformly thin interfacial oxides beneath materials of high dielectric permitivity, or uniformly thin passivation oxides. Hydrofluoric (HF) etching of a silicon surface, for example, is followed by termination of the silicon surface with ligands larger than H or F, particularly hydroxyl, alkoxy or carboxylic tails. The substrate is oxidized with the surface termination in place. The surface termination and relatively low temperatures moderate the rate of oxidation, such that a controllable thickness of oxide is formed. In some embodiments, the ligand termination is replaced with OH prior to further deposition. The deposition preferably includes alternating, self-limiting chemistries in an atomic layer deposition process, though any other suitable deposition process can be used. Two or more of the HF etching, surface termination, oxidation, hydroxyl replacement of the surface termination and deposition on the oxide can be conducted in situ.
摘要翻译：公开了形成均匀厚度的超薄氧化物层的方法。该方法特别有利于在高介电常数材料或均匀薄的钝化氧化物材料下制备均匀的薄界面氧化物。例如，硅表面的氢氟酸（HF）蚀刻之后，用大于H或F的配体，特别是羟基，烷氧基或羧酸尾部的配位体终止硅表面。衬底被氧化，表面终止就位。表面终止和相对低的温度调节氧化速率，使得形成可控的氧化物厚度。在一些实施方案中，在进一步沉积之前，将配体终止物用OH代替。沉积优选地包括在原子层沉积工艺中的交替的自限制化学，尽管可以使用任何其它合适的沉积工艺。 HF蚀刻，表面终止，氧化，羟基取代表面终止和沉积在氧化物上的两个或多个可以原位进行。

7. 发明申请

US20130189837A1 SELECTIVE FORMATION OF METALLIC FILMS ON METALLIC SURFACES 有权
公开(公告)号：US20130189837A1
公开(公告)日：2013-07-25
申请号：US13702992
申请日：2011-06-10
申请人： Suvi P. Haukka , Antti Niskanen , Marko Tuominen
发明人： Suvi P. Haukka , Antti Niskanen , Marko Tuominen
IPC分类号： H01L21/02
CPC分类号： H01L21/7685 , C23C16/0227 , C23C16/14 , C23C16/45525 , H01L21/02068 , H01L21/02697 , H01L21/28562 , H01L21/32051 , H01L21/32053 , H01L21/76826 , H01L21/76829 , H01L21/76838 , H01L21/76849 , H01L21/76883
摘要： Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a layer or adsorbed species on the first surface and is subsequently reacted or converted to form a metallic layer. Preferably the deposition temperature is selected such that a selectivity of above about 90% is achieved.

8. 发明申请

US20120270393A1 METAL SILICIDE, METAL GERMANIDE, METHODS FOR MAKING THE SAME 有权
标题翻译：金属硅化物，金属锗，其制备方法
公开(公告)号：US20120270393A1
公开(公告)日：2012-10-25
申请号：US13452402
申请日：2012-04-20
申请人： Viljami J. Pore , Suvi P. Haukka , Tom E. Blomberg , Eva E. Tois
发明人： Viljami J. Pore , Suvi P. Haukka , Tom E. Blomberg , Eva E. Tois
IPC分类号： H01L21/3205 , H01L21/3215
CPC分类号： H01L29/45 , C23C16/06 , C23C16/406 , C23C16/45527 , H01L21/28518 , H01L21/28556 , H01L21/28562 , H01L21/3215 , H01L21/324 , H01L21/76843 , H01L21/76855 , H01L29/456 , H01L29/4933 , H01L29/665 , H01L29/66666 , H01L29/7827
摘要： In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD.
摘要翻译：一方面，提供了硅化和锗化的方法。在一些实施例中，用于形成金属硅化物的方法可包括在衬底的暴露的硅区上形成非氧化物界面，例如锗或固体锑。在界面层上形成金属氧化物。退火和还原使得来自金属氧化物的金属与下面的硅反应并形成金属硅化物。另外，可以通过在锗上还原金属氧化物来形成金属锗化物，无论底层的硅是否也被硅化。在其它实施例中，直接沉积镍，并且不使用界面层。另一方面，提供了通过气相沉积工艺沉积镍薄膜的方法。在一些实施例中，镍薄膜通过ALD沉积。

9. 发明申请

US20090246367A1 METHODS FOR FORMING CARBON NANOTUBES 有权
标题翻译：形成碳纳米管的方法
公开(公告)号：US20090246367A1
公开(公告)日：2009-10-01
申请号：US12058565
申请日：2008-03-28
申请人： Hannu A. Huotari , Suvi P. Haukka
发明人： Hannu A. Huotari , Suvi P. Haukka
IPC分类号： B05D7/00
CPC分类号： C30B29/602 , B82Y30/00 , B82Y40/00 , C01B32/162 , C30B25/00 , C30B29/02
摘要： Methods of forming a roughened metal surface on a substrate for nucleating carbon nanotube growth, and subsequently growing carbon nanotubes are provided. In preferred embodiments roughened surfaces are formed by selectively depositing metal or metal oxide on a substrate surface to form discrete, three-dimensional islands. Selective deposition may be obtained, for example, by modifying process conditions to cause metal agglomeration or by treating the substrate surface to provide a limited number of discontinuous reactive sites. The roughened metal surface may then be used as nucleation points for initiating carbon nanotube growth. The carbon nanotubes are grown in the same process chamber (in-situ) as the formation of the three dimensional metal islands without exposing the substrate to air.
摘要翻译：提供了在用于成核碳纳米管生长的基底上形成粗糙金属表面，随后生长碳纳米管的方法。在优选实施例中，通过在衬底表面上选择性地沉积金属或金属氧化物以形成离散的三维岛状体来形成粗糙表面。可以例如通过改变工艺条件以引起金属聚集或通过处理衬底表面以提供有限数量的不连续反应位点来获得选择性沉积。然后可以将粗糙化的金属表面用作引发碳纳米管生长的成核点。碳纳米管在与三维金属岛的形成相同的处理室（原地）生长，而不将基板暴露于空气中。

10. 发明授权

US07419903B2 Thin films 有权
标题翻译：薄膜
公开(公告)号：US07419903B2
公开(公告)日：2008-09-02
申请号：US11106220
申请日：2005-04-13
申请人： Suvi P. Haukka , Ivo Raaijmakers , Wei Min Li , Juhana Kostamo , Hessel Sprey
发明人： Suvi P. Haukka , Ivo Raaijmakers , Wei Min Li , Juhana Kostamo , Hessel Sprey
IPC分类号： H01L21/4763
CPC分类号： C23C16/029 , C23C16/34 , C23C16/401 , C23C16/403 , C23C16/405 , C23C16/452 , C23C16/45529 , C23C16/45531 , C23C16/45534 , C30B25/14 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02178 , H01L21/02189 , H01L21/02194 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28562 , H01L21/3141 , H01L21/3145 , H01L21/31612 , H01L21/3162 , H01L21/31641 , H01L21/3185 , H01L21/76846 , H01L21/76873 , H01L21/76879 , H01L29/513 , H01L29/517 , H01L29/518 , H01L2221/1089
摘要： Thin films are formed by formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources are introduced during the cyclical process. A graded gate dielectric is thereby provided, even for extremely thin layers. The gate dielectric as thin as 2 nm can be varied from pure silicon oxide to oxynitride to silicon nitride. Similarly, the gate dielectric can be varied from aluminum oxide to mixtures of aluminum oxide and a higher dielectric material (e.g., ZrO2) to pure high k material and back to aluminum oxide. In another embodiment, metal nitride (e.g., WN) is first formed as a barrier for lining dual damascene trenches and vias. During the alternating deposition process, copper can be introduced, e.g., in separate pulses, and the copper source pulses can gradually increase in frequency, forming a transition region, until pure copper is formed at the upper surface. Advantageously, graded compositions in these and a variety of other contexts help to avoid such problems as etch rate control, electromigration and non-ohmic electrical contact that can occur at sharp material interfaces. In some embodiments additional seed layers or additional transition layers are provided.
摘要翻译：通过原子层沉积形成薄膜，由此膜的组成可以在包括自限制化学的交替脉冲的循环期间从单层变为单层。在所示实施例中，在循环过程中引入了不同量的杂质源。因此，即使对于非常薄的层也提供了渐变栅极电介质。薄的2nm的栅极电介质可以从纯氧化硅到氧氮化物变化为氮化硅。类似地，栅极电介质可以从氧化铝到氧化铝和较高介电材料（例如ZrO 2）的混合物变化为纯高k材料并返回到氧化铝。在另一个实施例中，金属氮化物（例如，WN）首先形成为用于衬里双镶嵌沟槽和通孔的屏障。在交替沉积工艺期间，铜可以被引入，例如分开的脉冲，并且铜源脉冲可以逐渐增加频率，形成过渡区域，直到在上表面形成纯铜。有利的是，这些和各种其他情况下的分级组合物有助于避免诸如在尖锐材料界面处可能发生的蚀刻速率控制，电迁移和非欧姆电接触等问题。在一些实施例中，提供了额外的种子层或附加的过渡层。

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