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1. 发明授权

US07497420B2 Safe liquid source containers 有权
标题翻译：安全液源容器
公开(公告)号：US07497420B2
公开(公告)日：2009-03-03
申请号：US11647518
申请日：2006-12-28
申请人： Pekka T. Soininen
发明人： Pekka T. Soininen
IPC分类号： B01F3/04
CPC分类号： C23C16/4482 , C23C16/4481 , Y10S261/65
摘要： Containers for providing vapor phase reactant from liquid sources include bubbler designs and designs in which carrier gas flows over the liquid surface. Among the bubbler arrangements, a bypass conductance is provided to release excess pressure from the gas volume inside the container, or an enlarged bubbler tube is provided with a volume sufficient to accommodate all possible liquid backflow without having the liquid exit the container. Among the overflow designs, flow dividers provide a tortuous path for the gas to increase the time exposure of carrier gas packets to the evaporating liquid surface. The flow dividers can be microporous to encourage capillary action, thereby increasing the evaporating surface. The tortuous gas flow path can be separated from the liquid phase by a breathable semi-porous membrane that permits vapor phase reactant to pass through but prohibits liquid from passing in the other direction.
摘要翻译：用于从液体源提供气相反应物的容器包括起泡器设计和载气流过液体表面的设计。在起泡器布置中，提供旁路电导以从容器内的气体体积释放过多的压力，或者扩大的起泡管具有足以容纳所有可能的液体回流而不使液体离开容器的体积。在溢流设计中，分流器为气体提供曲折的路径，以增加载气分子到蒸发液体表面的时间暴露。分流器可以是微孔的以促进毛细作用，从而增加蒸发表面。曲折的气体流路可以通过允许气相反应物通过但禁止液体沿另一方向通过的透气半多孔膜与液相分离。

2. 发明授权

US07833352B2 Apparatus for fabrication of thin films 有权
标题翻译：薄膜制造装置
公开(公告)号：US07833352B2
公开(公告)日：2010-11-16
申请号：US10383291
申请日：2003-03-06
申请人： Niklas Bondestam , Janne Kesälä , Leif Keto , Pekka T. Soininen
发明人： Niklas Bondestam , Janne Kesälä , Leif Keto , Pekka T. Soininen
IPC分类号： H01L21/00 , C23C16/00 , C23C14/00
CPC分类号： C23C16/45544 , C30B25/02 , C30B25/08 , C30B25/12 , C30B25/165
摘要： The invention relates to an apparatus for growing thin-films onto a substrate by exposing the substrate to alternate surface reactions of vapor-phase reactants for forming a thin-film onto the, substrate by means of said surface reactions. The apparatus comprises a vacuum vessel (1), a reaction chamber (2) with a reaction space into which the substrate can be transferred and which has infeed channels (6) for feeding therein the reactants used in said thin-film growth process, as well as outlet channels (4) for discharging gaseous reaction products and excess reactants'. According to the invention, said reaction chamber comprises a base part (9, 10) mounted stationary in respect to the interior of said vacuum vessel (1) and a movable part (18) adapted to be sealably closable against said'base part of said reaction chamber. The invention makes it possible to improve the cleanliness of the substrate load chamber and to reduce the degree of substrate contamination. The apparatus is intended for use in the fabrication of thin-films by means of the ALE method for semiconductor layer structures and display units.
摘要翻译：本发明涉及一种用于通过将衬底暴露于用于通过所述表面反应在薄膜上形成薄膜的气相反应物的交替表面反应而将薄膜生长到衬底上的装置。该装置包括真空容器（1），具有反应空间的反应室（2），其中基板可以被转移到该反应室中，并且其具有用于在其中供入用于所述薄膜生长过程中的反应物的进料通道（6），作为以及用于排放气态反应产物和过量反应物的出口通道（4）。根据本发明，所述反应室包括相对于所述真空容器（1）的内部静止安装的基部（9,10）和适于与所述真空容器（1）内部的所述基部可密封地关闭的可移动部分（18）反应室。本发明使得可以提高基板负载室的清洁度并降低基板污染的程度。该装置旨在用于通过用于半导体层结构和显示单元的ALE方法制造薄膜。

3. 发明授权

US07037372B2 Method of growing a thin film onto a substrate 有权
公开(公告)号：US07037372B2
公开(公告)日：2006-05-02
申请号：US10975578
申请日：2004-10-28
申请人： Sven Lindfors , Pekka T. Soininen
发明人： Sven Lindfors , Pekka T. Soininen
IPC分类号： C30B25/12
CPC分类号： C23C16/45525 , C23C16/45544 , C30B25/14
摘要： The present invention relates to the production of thin films. In particular, the invention concerns a method of growing a thin film onto a substrate, in which method the substrate is placed in a reaction chamber and is subjected to surface reactions of a plurality of vapor-phase reactants according to the ALD method. The present invention is based on replacing the mechanical valves conventionally used for regulating the pulsing of the reactants, which valves tend to wear and intrude metallic particles into the process flow, with an improved precursor dosing system. The invention is characterized by choking the reactant flow between the vapour-phase pulses while still allowing a minimum flow of said reactant, and redirecting the reactant at these times to an other destination than the reaction chamber. The redirection is performed with an inactive gas, which is also used for ventilating the reaction chamber between the vapour-phase pulses.

4. 发明授权

US06689210B2 Apparatus for growing thin films 有权
标题翻译：用于生长薄膜的装置
公开(公告)号：US06689210B2
公开(公告)日：2004-02-10
申请号：US10205297
申请日：2002-07-24
申请人： Pekka T. Soininen , Vaino Kilpi
发明人： Pekka T. Soininen , Vaino Kilpi
IPC分类号： C30B2502
CPC分类号： C23C16/45525 , C23C16/45544 , C23C16/54 , C30B25/08 , C30B25/14 , Y10S117/90 , Y10T117/10
摘要： The invention relates to an apparatus for growing thin films onto the surface of a substrate by exposing the substrate to alternately repeated surface reactions of vapor-phase reactants. The apparatus comprises at least one process chamber having a tightly sealable structure, at least one reaction chamber having a structure suitable for adapting into the interior of said process chamber and comprising a reaction space of which at least a portion is movable, infeed means connectable to said reaction space for feeding said reactants into said reaction space, and outfeed means connectable to said reaction space for discharging excess reactants and reaction gases from said reaction space, and at least one substrate adapted into said reaction space. At least one loading chamber is arranged to cooperate with said process chamber so as to permit said reaction space or a portion thereof to be moved into said process chamber and away from said process chamber and, further, the operating pressure of the loading chamber is arranged to be controllable independently from said pressure chamber.
摘要翻译：本发明涉及一种用于通过使衬底暴露于气相反应物的交替反复表面反应而将薄膜生长到衬底表面上的装置。该装置包括具有可密封结构的至少一个处理室，至少一个反应室具有适于适应于所述处理室内部的结构，并且包括至少一部分可移动的反作用空间，进料装置可连接到所述用于将所述反应物进料到所述反应空间中的反应空间以及可连接到所述反应空间的出料装置，用于从所述反应空间排出过量的反应物和反应气体，以及适于所述反应空间的至少一个底物。至少一个装载室布置成与所述处理室配合，以允许所述反应空间或其一部分移动到所述处理室中并远离所述处理室，此外，布置加载室的操作压力可独立于所述压力室控制。

5. 发明授权

US06579374B2 Apparatus for fabrication of thin films 有权
公开(公告)号：US06579374B2
公开(公告)日：2003-06-17
申请号：US09769562
申请日：2001-01-25
申请人： Niklas Bondestam , Janne Kesälä , Leif Keto , Pekka T. Soininen
发明人： Niklas Bondestam , Janne Kesälä , Leif Keto , Pekka T. Soininen
IPC分类号： C23C1600
CPC分类号： C23C16/45544 , C30B25/02 , C30B25/08 , C30B25/12 , C30B25/165
摘要： The invention relates to an apparatus for growing thin films onto a substrate by exposing the substrate to alternate surface reactions of vapor-phase reactants for forming a thin film onto the substrate by means of said surface reactions. The apparatus comprises a vacuum vessel (1), a reaction chamber (2) with a reaction space into which the substrate can be transferred and which has infeed channels (6) for feeding therein the reactants used in said thin film growth process, as well as outlet channels (4) for discharging gaseous reaction products and excess reactants. According to the invention, said reaction chamber comprises a base part (9, 10) mounted stationary in respect to the interior of said vacuum vessel (1) and a movable part (18) adapted to be sealably closable against said base part of said reaction chamber. The invention makes it possible to improve the cleanliness of the substrate load chamber and to reduce the degree of substrate contamination. The apparatus is intended for use in the fabrication of thin films by means of the ALE method for semiconductor layer structures and display units.

6. 发明授权

US07971861B2 Safe liquid source containers 有权
标题翻译：安全液源容器
公开(公告)号：US07971861B2
公开(公告)日：2011-07-05
申请号：US12362009
申请日：2009-01-29
申请人： Pekka T. Soininen
发明人： Pekka T. Soininen
IPC分类号： B01F3/04
CPC分类号： C23C16/4482 , C23C16/4481 , Y10S261/65
摘要： Containers for providing vapor phase reactant from liquid sources include bubbler designs and designs in which carrier gas flows over the liquid surface. Among the bubbler arrangements, a bypass conductance is provided to release excess pressure from the gas volume inside the container, or an enlarged bubbler tube is provided with a volume sufficient to accommodate all possible liquid backflow without having the liquid exit the container. Among the overflow designs, flow dividers provide a tortuous path for the gas to increase the time exposure of carrier gas packets to the evaporating liquid surface. The flow dividers can be microporous to encourage capillary action, thereby increasing the evaporating surface. The tortuous gas flow path can be separated from the liquid phase by a breathable semi-porous membrane that permits vapor phase reactant to pass through but prohibits liquid from passing in the other direction.
摘要翻译：用于从液体源提供气相反应物的容器包括起泡器设计和载气流过液体表面的设计。在起泡器布置中，提供旁路电导以从容器内的气体体积释放过多的压力，或者扩大的起泡管具有足以容纳所有可能的液体回流而不使液体离开容器的体积。在溢流设计中，分流器为气体提供曲折的路径，以增加载气分子到蒸发液体表面的时间暴露。分流器可以是微孔的以促进毛细作用，从而增加蒸发表面。曲折的气体流路可以通过允许气相反应物通过但禁止液体沿另一方向通过的透气半多孔膜与液相分离。

7. 发明授权

US06783590B2 Method of growing a thin film onto a substrate 有权
公开(公告)号：US06783590B2
公开(公告)日：2004-08-31
申请号：US09835931
申请日：2001-04-16
申请人： Sven Lindfors , Pekka T. Soininen
发明人： Sven Lindfors , Pekka T. Soininen
IPC分类号： C30B2514
CPC分类号： C30B25/14 , C23C16/4402 , C23C16/4482 , C23C16/45527 , C23C16/45544 , C23C16/45561 , Y10T117/1004 , Y10T117/1008
摘要： A method of growing a thin film onto a substrate placed in a reaction chamber according to the ALD method by subjecting the substrate to alternate and successive surface reactions. The method includes providing a first reactant source and providing an inactive gas source. A first reactant is fed from the first reactant source in the form of repeated alternating pulses to a reaction chamber via a first conduit. The first reactant is allowed to react with the surface of the substrate in the reaction chamber. Inactive gas is fed from the inactive gas source into the first conduit via a second conduit that is connected to the first conduit at a first connection point so as to create a gas phase barrier between the repeated alternating pulses of the first reactant entering the reaction chamber. The inactive gas is withdrawn from said first conduit via a third conduit connected to the first conduit at a second connection point.

8. 发明申请

US20090133632A1 SAFE LIQUID SOURCE CONTAINERS 有权
标题翻译：安全液体源容器
公开(公告)号：US20090133632A1
公开(公告)日：2009-05-28
申请号：US12362009
申请日：2009-01-29
申请人： Pekka T. Soininen
发明人： Pekka T. Soininen
IPC分类号： C23C16/54
CPC分类号： C23C16/4482 , C23C16/4481 , Y10S261/65
摘要： Containers for providing vapor phase reactant from liquid sources include bubbler designs and designs in which carrier gas flows over the liquid surface. Among the bubbler arrangements, a bypass conductance is provided to release excess pressure from the gas volume inside the container, or an enlarged bubbler tube is provided with a volume sufficient to accommodate all possible liquid backflow without having the liquid exit the container. Among the overflow designs, flow dividers provide a tortuous path for the gas to increase the time exposure of carrier gas packets to the evaporating liquid surface. The flow dividers can be microporous to encourage capillary action, thereby increasing the evaporating surface. The tortuous gas flow path can be separated from the liquid phase by a breathable semi-porous membrane that permits vapor phase reactant to pass through but prohibits liquid from passing in the other direction.
摘要翻译：用于从液体源提供气相反应物的容器包括起泡器设计和载气流过液体表面的设计。在起泡器布置中，提供旁路电导以从容器内的气体体积释放过多的压力，或者扩大的起泡管具有足以容纳所有可能的液体回流而不使液体离开容器的体积。在溢流设计中，分流器为气体提供曲折的路径，以增加载气分子到蒸发液体表面的时间暴露。分流器可以是微孔的以促进毛细作用，从而增加蒸发表面。曲折的气体流路可以通过允许气相反应物通过但禁止液体沿另一方向通过的透气半多孔膜与液相分离。

9. 发明授权

US07156380B2 Safe liquid source containers 有权
标题翻译：安全液源容器
公开(公告)号：US07156380B2
公开(公告)日：2007-01-02
申请号：US10674651
申请日：2003-09-29
申请人： Pekka T. Soininen
发明人： Pekka T. Soininen
IPC分类号： B01F3/04
CPC分类号： C23C16/4482 , C23C16/4481 , Y10S261/65
摘要： Containers for providing vapor phase reactant from liquid sources include bubbler designs and designs in which carrier gas flows over the liquid surface. Among the bubbler arrangements, a bypass conductance is provided to release excess pressure from the gas volume inside the container, or an enlarged bubbler tube is provided with a volume sufficient to accommodate all possible liquid backflow without having the liquid exit the container. Among the overflow designs, flow dividers provide a tortuous path for the gas to increase the time exposure of carrier gas packets to the evaporating liquid surface. The flow dividers can be microporous to encourage capillary action, thereby increasing the evaporating surface. The tortuous gas flow path can be separated from the liquid phase by a breathable semi-porous membrane that permits vapor phase reactant to pass through but prohibits liquid from passing in the other direction.
摘要翻译：用于从液体源提供气相反应物的容器包括起泡器设计和载气流过液体表面的设计。在起泡器布置中，提供旁路电导以从容器内的气体体积释放过多的压力，或者扩大的起泡管具有足以容纳所有可能的液体回流而不使液体离开容器的体积。在溢流设计中，分流器为气体提供曲折的路径，以增加载气分子到蒸发液体表面的时间暴露。分流器可以是微孔的以促进毛细作用，从而增加蒸发表面。曲折的气体流路可以通过允许气相反应物通过但禁止液体沿另一方向通过的透气半多孔膜与液相分离。

10. 发明授权

US06861334B2 Method of fabricating trench isolation structures for integrated circuits using atomic layer deposition 有权
标题翻译：使用原子层沉积制造集成电路的沟槽隔离结构的方法
公开(公告)号：US06861334B2
公开(公告)日：2005-03-01
申请号：US09887199
申请日：2001-06-21
申请人： Ivo Raaijmakers , Pekka T. Soininen , Ernst H. A. Granneman
发明人： Ivo Raaijmakers , Pekka T. Soininen , Ernst H. A. Granneman
IPC分类号： H01L21/316 , H01L21/762 , H01L21/76
CPC分类号： H01L21/02164 , H01L21/02145 , H01L21/02178 , H01L21/02216 , H01L21/0228 , H01L21/3141 , H01L21/3144 , H01L21/3145 , H01L21/31612 , H01L21/3162 , H01L21/76224
摘要： A dielectric film is formed by atomic layer deposition to conformally fill a narrow, deep trench for device isolation. The method of the illustrated embodiments includes alternately pulsing vapor-phase reactants in a string of cycles, where each cycle deposits no more than about a monolayer of material, capable of completely filling high aspect ratio trenches. Additionally, the trench-fill material composition can be tailored by processes described herein, particularly to match the coefficient of thermal expansion (CTE) to that of the surrounding substrate within which the trench is formed. Mixed phases of mullite and silica have been found to meet the goals of device isolation and matched CTE. The described process includes mixing atomic layer deposition cycles of aluminum oxide and silicon oxide in ratios selected to achieve the desired composition of the isolation material, namely on the order of 30% alumina and 70% silicon oxide by weight.
摘要翻译：通过原子层沉积形成电介质膜，以保形地填充狭窄的深沟槽，用于器件隔离。所示实施方案的方法包括交替地以一系列循环脉冲气相反应物，其中每个循环不超过约单层材料，能够完全填充高纵横比沟槽。此外，沟槽填充材料组合物可以通过本文所述的方法来定制，特别是使热膨胀系数（CTE）与其中形成沟槽的周围基底的热膨胀系数相匹配。已经发现莫来石和二氧化硅的混合相达到器件隔离和匹配CTE的目标。所描述的方法包括以选择的比例混合氧化铝和氧化硅的原子层沉积循环，以达到分离材料的所需组成，即按重量计30％氧化铝和70％氧化硅。

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