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1. 发明授权

US08846502B2 Methods for depositing thin films comprising gallium nitride by atomic layer deposition 有权
标题翻译：通过原子层沉积沉积包含氮化镓的薄膜的方法
公开(公告)号：US08846502B2
公开(公告)日：2014-09-30
申请号：US13538809
申请日：2012-06-29
申请人： Suvi Haukka , Viljami J. Pore , Antti Niskanen
发明人： Suvi Haukka , Viljami J. Pore , Antti Niskanen
IPC分类号： H01L21/20
CPC分类号： H01L21/2056 , C23C16/303 , C23C16/4554 , C30B25/14 , C30B29/406 , H01L21/0254 , H01L21/02579 , H01L21/0262
摘要： Atomic layer deposition (ALD) processes for forming thin films comprising GaN are provided. In some embodiments, ALD processes for forming doped GaN thin films are provided. The thin films may find use, for example, in light-emitting diodes.
摘要翻译：提供了用于形成包括GaN的薄膜的原子层沉积（ALD）工艺。在一些实施例中，提供了用于形成掺杂的GaN薄膜的ALD工艺。薄膜可以用于例如发光二极管中。

2. 发明申请

US20080317972A1 METHOD FOR DEPOSITING THIN FILMS BY MIXED PULSED CVD AND ALD 有权
标题翻译：通过混合脉冲CVD和ALD沉积薄膜的方法
公开(公告)号：US20080317972A1
公开(公告)日：2008-12-25
申请号：US11766625
申请日：2007-06-21
申请人： Menso Hendriks , Martin Knapp , Suvi Haukka
发明人： Menso Hendriks , Martin Knapp , Suvi Haukka
IPC分类号： H05H1/24
CPC分类号： C23C16/308 , C23C16/18 , C23C16/30 , C23C16/34 , C23C16/401 , C23C16/405 , C23C16/45523
摘要： Films are deposited on a substrate by a process in which atomic layer deposition (ALD) is used to deposit one layer of the film and pulsed chemical vapor deposition (CVD) is used to deposit another layer of the film. During the ALD part of the process, a layer is formed by flowing sequential and alternating pulses of mutually reactive reactants that deposit self-limitingly on a substrate. During the pulsed CVD part of the process, another layer is deposited by flowing two CVD reactants into a reaction chamber, with at least a first of the CVD reactants flowed into the reaction chamber in pulses, with those pulses overlapping at least partially with the flow of a second of the CVD reactants. The ALD and CVD parts of the process ca be used to deposit layers with different compositions, thereby forming, e.g., nanolaminate films. Preferably, high quality layers are formed by flowing the second CVD reactant into the reaction chamber for a longer total duration than the first CVD reactant. In some embodiments, the pulses of the third reactant at separated by a duration at least about 1.75 times the length of the pulse. Preferably, less than about 8 monolayers of material are deposited per pulse of the first CVD reactant.
摘要翻译：通过使用原子层沉积（ALD）沉积一层膜并使用脉冲化学气相沉积（CVD）沉积另一层膜的方法将膜沉积在衬底上。在该过程的ALD部分期间，通过使在衬底上自发沉积的相互反应的反应物的顺序和交替脉冲流动形成层。在该过程的脉冲CVD部分期间，通过使两个CVD反应物流入反应室来沉积另一层，其中至少一个CVD反应物以脉冲流入反应室，这些脉冲至少部分地与流动重叠的二分之一的CVD反应物。该方法的ALD和CVD部分可用于沉积具有不同组成的层，从而形成例如Nanolaminate膜。优选地，通过使第二CVD反应物流入反应室中比第一CVD反应物更长的总持续时间形成高质量的层。在一些实施方案中，第三反应物的脉冲以脉冲长度的至少约1.75倍的持续时间隔开。优选地，每个脉冲的第一CVD反应物沉积少于约8个单层的材料。

3. 发明申请

US20070128858A1 Method of producing thin films 有权
标题翻译：薄膜的制造方法
公开(公告)号：US20070128858A1
公开(公告)日：2007-06-07
申请号：US11294843
申请日：2005-12-05
申请人： Suvi Haukka , Hannu Huotari
发明人： Suvi Haukka , Hannu Huotari
IPC分类号： H01L21/44
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/45525 , C23C16/45531 , C23C16/45542 , H01L21/28088 , H01L21/823842 , H01L29/4966 , H01L29/517 , H01L29/6659 , H01L29/7833
摘要： A process for producing metal nitride thin films comprising doping the metal nitride thin films by atomic layer deposition (ALD) with silicon or boron or a combination thereof. The work function of metal nitride thin films, which are used in metal electrode applications, can efficiently be tuned.
摘要翻译：一种制造金属氮化物薄膜的方法，包括通过原子层沉积（ALD）与硅或硼或其组合掺杂金属氮化物薄膜。用于金属电极应用的金属氮化物薄膜的功能可以有效调节。

4. 发明申请

US20060079090A1 Method for depositing nanolaminate thin films on sensitive surfaces 有权
标题翻译：在敏感表面上沉积Nanolaminate薄膜的方法
公开(公告)号：US20060079090A1
公开(公告)日：2006-04-13
申请号：US11288872
申请日：2005-11-28
申请人： Kai-Erik Elers , Suvi Haukka , Ville Antero Saanila , Sari Kaipio , Pekka Soininen
发明人： Kai-Erik Elers , Suvi Haukka , Ville Antero Saanila , Sari Kaipio , Pekka Soininen
IPC分类号： H01L21/44
CPC分类号： C23C16/45534 , C23C16/32 , C23C16/34 , C23C16/44 , C23C16/4401 , C23C16/45525 , C23C16/45529 , C30B25/02 , C30B29/02 , C30B29/36 , C30B29/38 , H01L21/28562 , H01L21/28568 , H01L21/76843 , H01L21/76846 , H01L21/76877
摘要： The present method provides tools for growing conformal metal nitride, metal carbide and metal thin films, and nanolaminate structures incorporating these films, from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of transition metal, transition metal carbide and transition metal nitride thin films on various surfaces, such as metals and oxides. Getter compounds protect surfaces sensitive to hydrogen halides and ammonium halides, such as aluminum, copper, silicon oxide and the layers being deposited, against corrosion. Nanolaminate structures (20) incorporating metal nitrides, such as titanium nitride (30) and tungsten nitride (40), and metal carbides, and methods for forming the same, are also disclosed.
摘要翻译：本方法提供用于生长适形金属氮化物，金属碳化物和金属薄膜以及从侵蚀性化学品中掺入这些膜的纳米结构结构的工具。过渡金属，过渡金属碳化物和过渡金属氮化物薄膜在各种表面如金属和氧化物的沉积过程中，腐蚀性化合物（如卤代卤化氢）的量减少。吸气剂保护对卤化氢和卤化铵敏感的表面，如铝，铜，氧化硅和沉积层，以防腐蚀。还公开了纳入氮化钛（30）和氮化钨（40）的金属氮化物的金属碳化物的纳米级层压结构（20）及其形成方法。

5. 发明申请

US20130012003A1 METHODS FOR DEPOSITING THIN FILMS COMPRISING GALLIUM NITRIDE BY ATOMIC LAYER DEPOSITION 有权
标题翻译：通过原子沉积沉积包含氮化镓的薄膜的方法
公开(公告)号：US20130012003A1
公开(公告)日：2013-01-10
申请号：US13538809
申请日：2012-06-29
申请人： Suvi Haukka , Viljami J. Pore , Antti Niskanen
发明人： Suvi Haukka , Viljami J. Pore , Antti Niskanen
IPC分类号： H01L21/205
CPC分类号： H01L21/2056 , C23C16/303 , C23C16/4554 , C30B25/14 , C30B29/406 , H01L21/0254 , H01L21/02579 , H01L21/0262
摘要： Atomic layer deposition (ALD) processes for forming thin films comprising GaN are provided. In some embodiments, ALD processes for forming doped GaN thin films are provided. The thin films may find use, for example, in light-emitting diodes.
摘要翻译：提供了用于形成包括GaN的薄膜的原子层沉积（ALD）工艺。在一些实施例中，提供了用于形成掺杂的GaN薄膜的ALD工艺。薄膜可以用于例如发光二极管中。

6. 发明申请

US20110256722A1 METHODS FOR FORMING ROUGHENED SURFACES AND APPLICATIONS THEREOF 有权
标题翻译：形成粗糙表面的方法及其应用
公开(公告)号：US20110256722A1
公开(公告)日：2011-10-20
申请号：US13084254
申请日：2011-04-11
申请人： Hannu Huotari , Suvi Haukka
发明人： Hannu Huotari , Suvi Haukka
IPC分类号： H01L21/306
CPC分类号： H01L21/32051 , H01L27/10852 , H01L28/84 , Y10S977/742 , Y10S977/773
摘要： Methods of forming a roughened metal surface on a substrate are provided, along with structures comprising such roughened surfaces. In preferred embodiments roughened surfaces are formed by selectively depositing metal or metal oxide on a substrate surface to form discrete, three-dimensional islands. Selective deposition may be obtained, for example, by modifying process conditions to cause metal agglomeration or by treating the substrate surface to provide a limited number of discontinuous reactive sites. The roughened metal surface may be used, for example, in the manufacture of integrated circuits.
摘要翻译：提供了在基底上形成粗糙金属表面的方法以及包括这种粗糙表面的结构。在优选实施例中，通过在衬底表面上选择性地沉积金属或金属氧化物以形成离散的三维岛状体来形成粗糙表面。可以例如通过改变工艺条件以引起金属聚集或通过处理衬底表面以提供有限数量的不连续反应位点来获得选择性沉积。粗糙化的金属表面可以用于例如集成电路的制造。

7. 发明申请

US20090246931A1 Methods for Forming Roughened Surfaces and Applications thereof 有权
标题翻译：形成粗糙面的方法及其应用
公开(公告)号：US20090246931A1
公开(公告)日：2009-10-01
申请号：US12368845
申请日：2009-02-10
申请人： Hannu Huotari , Suvi Haukka
发明人： Hannu Huotari , Suvi Haukka
IPC分类号： H01L21/02 , B05D5/12
CPC分类号： H01L21/32051 , H01L27/10852 , H01L28/84 , Y10S977/742 , Y10S977/773
摘要： Methods of forming a roughened metal surface on a substrate are provided, along with structures comprising such roughened surfaces. In preferred embodiments roughened surfaces are formed by selectively depositing metal or metal oxide on a substrate surface to form discrete, three-dimensional islands. Selective deposition may be obtained, for example, by modifying process conditions to cause metal agglomeration or by treating the substrate surface to provide a limited number of discontinuous reactive sites. The roughened metal surface may be used, for example, in the manufacture of integrated circuits.
摘要翻译：提供了在基底上形成粗糙金属表面的方法以及包括这种粗糙表面的结构。在优选实施例中，通过在衬底表面上选择性地沉积金属或金属氧化物以形成离散的三维岛状体来形成粗糙表面。可以例如通过改变工艺条件以引起金属聚集或通过处理衬底表面以提供有限数量的不连续反应位点来获得选择性沉积。粗糙化的金属表面可以用于例如集成电路的制造。

8. 发明申请

US20070036892A1 Enhanced deposition of noble metals 有权
标题翻译：增强贵金属的沉积
公开(公告)号：US20070036892A1
公开(公告)日：2007-02-15
申请号：US11375819
申请日：2006-03-14
申请人： Suvi Haukka , Marko Tuominen , Antti Rahtu
发明人： Suvi Haukka , Marko Tuominen , Antti Rahtu
IPC分类号： C23C16/00
CPC分类号： C23C16/08 , C23C16/0218 , C23C16/18 , C23C16/45525 , H01L21/28562
摘要： The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on particular surfaces. The methods may be utilized to facilitate selective deposition. For example, selective deposition of noble metals on high-k materials relative to insulators can be enhanced by pretreatment with halide reactants. In addition, halide treatment can be used to avoid deposition on the quartz walls of the reaction chamber.
摘要翻译：本发明一般涉及通过原子层沉积来增强在衬底上沉积贵金属薄膜的方法。使用气态卤化物或金属有机化合物进行处理减少了在特定表面上沉积贵金属的孵育时间。该方法可用于促进选择性沉积。例如，可以通过用卤化物反应物预处理来提高贵金属在高k材料上相对于绝缘体的选择性沉积。此外，可以使用卤化物处理以避免沉积在反应室的石英壁上。

9. 发明申请

US20060292872A1 Atomic layer deposition of thin films on germanium 有权
标题翻译：原子层沉积在锗上的薄膜
公开(公告)号：US20060292872A1
公开(公告)日：2006-12-28
申请号：US11336621
申请日：2006-01-20
申请人： Suvi Haukka , Marko Tuominen , Antti Rahtu
发明人： Suvi Haukka , Marko Tuominen , Antti Rahtu
IPC分类号： H01L21/44 , H01L21/31
CPC分类号： H01L21/0228 , C23C16/0272 , C23C16/45525 , C23C16/45531 , H01L21/02175 , H01L21/28158 , H01L21/28255 , H01L21/3141 , H01L21/31616 , H01L21/31641 , H01L21/31645 , H01L29/518
摘要： Germanium has higher mobility than silicon and therefore is considered to be a good alternative semiconductor for CMOS technology. Surface treatments a can facilitate atomic layer deposition (ALD) of thin films, such as high-k dielectric layers, on germanium substrates. Surface treatment can comprise the formation of a thin layer of GeOx or GeOxNy. After surface treatment and prior to deposition of the desired thin film, a passivation layer may be deposited on the substrate. The passivation layer may be, for example, a metal oxide layer deposited by ALD.
摘要翻译：锗具有比硅更高的迁移率，因此被认为是用于CMOS技术的良好替代半导体。表面处理a可以促进在锗衬底上的诸如高k电介质层的薄膜的原子层沉积（ALD）。表面处理可以包括形成GeO层或GeO x N层的薄层。在表面处理之后并且在沉积所需的薄膜之前，可以在衬底上沉积钝化层。钝化层可以是例如由ALD沉积的金属氧化物层。

10. 发明授权

US06500780B1 Method for preparing heterogeneous catalysts of desired metal content 失效
标题翻译：制备所需金属含量的非均相催化剂的方法
公开(公告)号：US06500780B1
公开(公告)日：2002-12-31
申请号：US08840274
申请日：1997-04-14
申请人： Tuomo Suntola , Suvi Haukka , Arla Kytökivi , Eeva-Liisa Lakomaa , Marina Lindblad , Jukka Hietala , Harri Hokkanen , Hilkka Knuuttila , Pekka Knuuttila , Outi Krause , Lars Peter Lindfors
发明人： Tuomo Suntola , Suvi Haukka , Arla Kytökivi , Eeva-Liisa Lakomaa , Marina Lindblad , Jukka Hietala , Harri Hokkanen , Hilkka Knuuttila , Pekka Knuuttila , Outi Krause , Lars Peter Lindfors
IPC分类号： B01J3702
CPC分类号： B01J37/0238 , B01J21/063 , B01J23/26 , B01J23/30
摘要： The present invention concerns a method for preparing heterogeneous catalysts. According to the method, preparation is carried out under such process conditions in which the bonding of compounds from the gas phase onto the surface of a support material is primarily determined by the properties of the support surface. The constituents contained in the reagent are then selectively bonded to the bonding sites of the support material surface, thus forming stable surface bonds. According to the invention, the number of surface-bond sites available for preparing a stable product with surface bonds is controlled by varying the reaction temperature and/or selecting a suitable reagent. The invention makes it possible to control the metal content of the end product at a predetermined level.
摘要翻译：本发明涉及一种制备非均相催化剂的方法。根据该方法，在这样的工艺条件下进行制备，其中化合物从气相到载体材料的表面上的键合主要由支撑体表面的性质决定。然后将包含在试剂中的组分选择性地结合到载体材料表面的结合位点，从而形成稳定的表面键。根据本发明，通过改变反应温度和/或选择合适的试剂来控制可用于制备具有表面键的稳定产物的表面键合位点的数目。本发明使得能够将最终产品的金属含量控制在预定水平。

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