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51. 发明授权

US06861299B2 Process for manufacturing thin film transistor on unannealed glass substrate 有权
标题翻译：在非退火玻璃基板上制造薄膜晶体管的工艺
公开(公告)号：US06861299B2
公开(公告)日：2005-03-01
申请号：US10404060
申请日：2003-04-02
申请人： Kazuhiko Horikoshi , Klyoshi Ogata , Takuo Tamura , Miwako Nakahara , Makoto Ohkura , Ryoji Oritsuki , Yasushi Nakano , Takeo Shiba
发明人： Kazuhiko Horikoshi , Klyoshi Ogata , Takuo Tamura , Miwako Nakahara , Makoto Ohkura , Ryoji Oritsuki , Yasushi Nakano , Takeo Shiba
IPC分类号： G02F1/1368 , G09F9/00 , G09F9/30 , G09F9/35 , H01L21/336 , H01L29/49 , H01L29/786 , H01L21/00 , H01L21/84
CPC分类号： H01L29/66757 , H01L29/4908 , H01L29/78603
摘要： Inexpensive, unannealed glass is used as a substrate. The surface of a polycrystalline silicon film doped with boron (B) or phosphorus (P) is oxidized with ozone at a processing temperature of 500° C. or below to form a silicon oxide film of 4 to 20 nm thick on the surface of polycrystalline silicon. On account of this treatment, the level density at the interface between the gate-insulating layer and the channel layer can be made lower, and a thin-film transistor having less variations of characteristics can be formed on the unannealed glass substrate.
摘要翻译：使用廉价的未退火玻璃作为基材。掺杂有硼（B）或磷（P）的多晶硅膜的表面在臭氧处于500℃以下的处理温度下被氧化，在多晶的表面上形成厚度为4〜20nm的氧化硅膜硅。由于这种处理，可以使栅绝缘层和沟道层之间的界面处的电平密度更低，并且可以在非退火玻璃基板上形成具有较小特性变化的薄膜晶体管。

52. 发明授权

US06806099B2 Process for producing polycrystalline silicon film by crystallizing on amorphous silicon film by light irradiation 有权
标题翻译：通过光照射在非晶硅膜上结晶生产多晶硅膜的方法
公开(公告)号：US06806099B2
公开(公告)日：2004-10-19
申请号：US10059203
申请日：2002-01-31
申请人： Kazuo Takeda , Masakazu Saito , Yukio Takasaki , Hironobu Abe , Makoto Ohkura , Yoshinobu Kimura , Takeo Shiba
发明人： Kazuo Takeda , Masakazu Saito , Yukio Takasaki , Hironobu Abe , Makoto Ohkura , Yoshinobu Kimura , Takeo Shiba
IPC分类号： G01R3126
CPC分类号： H01L21/02686 , C30B13/00 , C30B29/06 , H01L21/02532 , H01L21/02595 , H01L21/2026 , H01L29/6675 , H01L29/78672
摘要： The present invention provides a process for producing a polycrystal silicon film which comprises a step of forming a polycrystal silicon film by light irraditation of a silicon film set on a substrate, and a step of selecting substrate samples having an average grain size in a plane of the sample of 500 nm or more. According to the present invention, stable production of a high-performance poly-silicon TFT liquid crystal display becomes possible.
摘要翻译：本发明提供一种多晶硅膜的制造方法，其特征在于，包括通过在基板上设置的硅膜的光照射形成多晶硅膜的步骤，以及选择平均粒径在 500nm以上的样品。根据本发明，可以稳定地生产高性能多晶硅TFT液晶显示器。

53. 发明授权

US06479867B2 Thin film transistor 有权
公开(公告)号：US06479867B2
公开(公告)日：2002-11-12
申请号：US09940538
申请日：2001-08-29
申请人： Toshihiko Itoga , Takeo Shiba , Makoto Ohkura , Toshiki Kaneko
发明人： Toshihiko Itoga , Takeo Shiba , Makoto Ohkura , Toshiki Kaneko
IPC分类号： H01L2701
CPC分类号： H01L29/66757 , H01L29/78621
摘要： A thin film transistor of high reliability mounted on an insulator substrate, the transistor having a semiconductor thin film, a gate insulation film and a gate electrode in which the concentration profile of impurities in the semiconductor thin film is controlled so as to have a peak in a region other than the center of the depth for the semiconductor thin film to attain a long life for LCD.

54. 发明授权

US6133094A Semiconductor device and process of producing the same 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US6133094A
公开(公告)日：2000-10-17
申请号：US123405
申请日：1998-07-28
申请人： Hiromi Shimamoto , Takashi Uchino , Takeo Shiba , Kazuhiro Ohnishi , Yoichi Tamaki , Takashi Kobayashi , Toshiyuki Kikuchi , Takahide Ikeda
发明人： Hiromi Shimamoto , Takashi Uchino , Takeo Shiba , Kazuhiro Ohnishi , Yoichi Tamaki , Takashi Kobayashi , Toshiyuki Kikuchi , Takahide Ikeda
IPC分类号： H01C7/06 , H01L21/02 , H01L21/822 , H01L27/04 , H01L27/06 , H01L21/336
CPC分类号： H01L27/0652 , H01L27/0688 , H01L28/20
摘要： The present invention provides a polycrystalline silicon conducting structure (e.g., a resistor) whose resistance value is controlled, and can be less variable and less dependent on temperature with respect to any resistant value, and a process of producing the same. Use is made of at least a two-layer structure including a first polycrystalline silicon layer of large crystal grain size and a second polycrystalline silicon layer of small crystal grain size, and the first polycrystalline silicon layer has a positive temperature dependence of resistance while the second polycrystalline layer has a negative temperature dependence of resistance, or vice versa. Moreover, the polycrystalline silicon layer of large grain size can be formed by high dose ion implantation and annealing, or by depositing the layers by chemical vapor deposition at different temperatures so as to form large-grain and small-grain layers.
摘要翻译：本发明提供了一种其电阻值被控制的多晶硅导电结构（例如电阻器），并且可以相对于任何电阻值而言可以变化较小并且对温度的依赖性较小，及其制造方法。使用至少包括具有大晶粒尺寸的第一多晶硅层和小晶粒尺寸的第二多晶硅层的两层结构，并且第一多晶硅层具有正的温度对电阻的依赖性，而第二多晶硅层的第二多晶层具有负电阻的温度依赖性，反之亦然。此外，可以通过高剂量离子注入和退火，或者通过在不同温度下的化学气相沉积来沉积这些层，形成大晶粒和小晶粒层，可以形成大晶粒尺寸的多晶硅层。

55. 发明授权

US5324983A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5324983A
公开(公告)日：1994-06-28
申请号：US902592
申请日：1992-06-22
申请人： Takahiro Onai , Takeo Shiba , Tohru Nakamura , Yoichi Tamaki , Katsuyoshi Washio , Kazuhiro Ohnishi , Masayoshi Saitoh
发明人： Takahiro Onai , Takeo Shiba , Tohru Nakamura , Yoichi Tamaki , Katsuyoshi Washio , Kazuhiro Ohnishi , Masayoshi Saitoh
IPC分类号： H01L21/28 , H01L21/331 , H01L29/423 , H01L29/73 , H01L29/732 , H01L27/082 , H01L27/102 , H01L29/00
CPC分类号： H01L29/66272 , H01L29/42304
摘要： A first region of a first conductivity type is formed in the surface of a semiconductor body, and second and third regions of a second conductivity type are formed on and under, respectively, of the first region. An electrode region formed on a first insulating film formed on the semiconductor body is connected electrically to the first region. The electrode region is defined as having an elongated first part an upper surface of which is connected to an electrode, and having a second, different part which has a substantially constant width and which width is substantially equal to the thickness of the first portion of the electrode region. A metal silicide film is formed over the upper surface of the first portion of the electrode region. The first, second and third regions can be base, emitter and collector regions, respectively, of a bipolar transistor formed in an island region of an epitaxially grown layer on a semiconductor substrate.
摘要翻译：第一导电类型的第一区域形成在半导体本体的表面中，并且第二导电类型的第二和第三区域分别形成在第一区域的上下。形成在形成在半导体主体上的第一绝缘膜上的电极区域与第一区域电连接。电极区域被限定为具有细长的第一部分，其上表面连接到电极，并且具有第二不同部分，其具有基本恒定的宽度，并且该宽度基本上等于第一部分的厚度电极区域。在电极区域的第一部分的上表面上形成金属硅化物膜。第一，第二和第三区域可以分别是形成在半导体衬底上的外延生长层的岛区中的双极晶体管的基极，发射极和集电极区域。

56. 发明授权

US4819054A Semiconductor IC with dual groove isolation 失效
标题翻译：半导体IC双沟槽隔离
公开(公告)号：US4819054A
公开(公告)日：1989-04-04
申请号：US11932
申请日：1987-02-06
申请人： Mikinori Kawaji , Toshihiko Takakura , Akihisa Uchida , Shigeo Kuroda , Yoichi Tamaki , Takeo Shiba , Kazuhiko Sagara , Masao Kawamura
发明人： Mikinori Kawaji , Toshihiko Takakura , Akihisa Uchida , Shigeo Kuroda , Yoichi Tamaki , Takeo Shiba , Kazuhiko Sagara , Masao Kawamura
IPC分类号： H01L21/762 , H01L21/763 , H01L29/732 , H01L27/12
CPC分类号： H01L21/763 , H01L21/76224 , H01L29/7325 , Y10S148/05
摘要： A bipolar type of semiconductor integrated circuit device is provided with U-shaped grooves which are formed by cutting a main surface of a semiconductor body to form isolation regions between bipolar transistors. A silicon oxide film can be formed in the U-shaped grooves by thermal oxidation simultaneously with the formation of a silicon oxide film used to form isolation regions between each collector contact region and base region. No separate step is needed for forming the silicon oxide film between the collector contact region and the base region. The thickness of the silicon oxide film can be controlled, and has a sufficient thickness even at its two edges, i.e., at its boundaries with the U-shaped grooves, so that the bipolar transistors exhibit good electrical characteristics. Namely, the collector resistance thereof does not increase, and the breakdown voltage at the pn junction between the collector region and the base region does not decrease. The U-shaped grooves can each comprise narrow and deep sub-grooves, with thick oxide films formed on the surfaces of the sub-grooves and a thick oxide film formed on a surface of an area between the sub-grooves, and with wiring formed on the oxide on the area between the sub-grooves.
摘要翻译：双极型半导体集成电路器件设置有通过切割半导体本体的主表面以在双极晶体管之间形成隔离区而形成的U形沟槽。可以通过热氧化在U形槽中形成氧化硅膜，同时形成用于在每个集电极接触区域和基极区域之间形成隔离区域的氧化硅膜。在集电极接触区域和基极区域之间形成氧化硅膜不需要单独的步骤。可以控制氧化硅膜的厚度，并且即使在其两个边缘，即与U形槽的边界处，也具有足够的厚度，使得双极晶体管表现出良好的电特性。也就是说，其集电极电阻不增加，并且集电极区域和基极区域之间的pn结处的击穿电压不降低。 U形槽可以各自包括窄的和深的子槽，其中形成在子槽的表面上的厚的氧化膜和形成在子槽之间的区域的表面上的厚氧化膜，并且形成有布线在子槽之间的区域上的氧化物上。

57. 发明授权

US08013811B2 Image display device 有权
标题翻译：图像显示装置
公开(公告)号：US08013811B2
公开(公告)日：2011-09-06
申请号：US12005318
申请日：2007-12-27
申请人： Hajime Akimoto , Takahiro Nagano , Takeo Shiba
发明人： Hajime Akimoto , Takahiro Nagano , Takeo Shiba
IPC分类号： G09G3/30
CPC分类号： G09G3/3233 , G09G3/2014 , G09G2300/0426 , G09G2300/0452 , G09G2300/0465 , G09G2300/08 , G09G2300/0842 , G09G2300/0861 , G09G2310/027 , G09G2320/0285 , G09G2320/0666 , G09G2320/0673 , G09G2330/02
摘要： An image display device incorporates a group of pixels of two or more types, each pixel including a light source whose primary wavelength is specific to the type of pixel; a generating device for generating analog pixel signals to be input to the group of pixels from input digital pixel data, wherein the generating device has a converter to convert input digital pixel data into different output digital pixel data appropriate for each type of pixel where the output digital pixel data contains more bits than the input digital pixel data; and an input device for inputting the analog pixel signals to the group of pixels, each pixel including a light emission driver for driving the light source according to the analog pixel signal. An organic EL display device having individual R, G, and B light emission elements enables displaying in desired colors and controllable tones with reduced packaging area for the components of the organic EL display.
摘要翻译：图像显示装置包含两种或更多种类型的像素组，每个像素包括其主要波长特定于像素类型的光源; 产生装置，用于从输入的数字像素数据产生要输入到像素组的模拟像素信号，其中所述生成装置具有转换器，用于将输入的数字像素数据转换成适合于每种类型像素的不同的输出数字像素数据，其中输出数字像素数据包含比输入的数字像素数据更多的位; 以及用于将模拟像素信号输入到像素组的输入装置，每个像素包括根据模拟像素信号驱动光源的发光驱动器。具有单独的R，G和B发光元件的有机EL显示装置能够以有机EL显示器的部件的减少的包装面积显示所需颜色和可控色调。

58. 发明授权

US07907797B2 Image processing apparatus 有权
标题翻译：图像处理装置
公开(公告)号：US07907797B2
公开(公告)日：2011-03-15
申请号：US11631936
申请日：2004-08-04
申请人： Naohiro Furukawa , Yoshiaki Toyota , Hisashi Ikeda , Takeo Shiba , Yo Takeuchi
发明人： Naohiro Furukawa , Yoshiaki Toyota , Hisashi Ikeda , Takeo Shiba , Yo Takeuchi
IPC分类号： G06K7/00 , G09G5/00 , H04N1/387
CPC分类号： G06F3/03545 , G06F3/002 , G06F3/04815 , G06F3/04817 , G06F3/04845 , G06F3/0488 , G06F3/04883 , G06T11/60 , H04N1/387
摘要： This invention provides an efficient image processing apparatus having merits as the handiness and visibility of paper and the multi-functionality of a computer, enabling trial and error with paper media without capturing all images previously. The apparatus comprises an image capturing unit for electronically capturing paper images by a photo-sensor; an image editing unit for editing such as clipping of partial image or scaling; a user interface unit for receiving user's commands regarding the image editing; an image memory unit for storing; and an image display unit for displaying the images in the image memory unit. An image displaying function is provided on a transparent plane. Photo-sensors are on the plane, and image capturing unit and image display unit are integrated to form an image capturing and display unit. A user gains an operability compatible with human instinct, ignoring a difference between paper and electronic medium.
摘要翻译：本发明提供了一种有效的图像处理装置，其优点在于纸张的便利性和可视性以及计算机的多功能性，能够在纸张介质上进行试错，而不会先前捕获所有图像。该装置包括用于通过光电传感器电子捕获纸张图像的图像捕获单元; 用于编辑诸如部分图像或缩放的裁剪的图像编辑单元; 用于接收关于图像编辑的用户命令的用户界面单元; 用于存储的图像存储单元; 以及用于在图像存储单元中显示图像的图像显示单元。在透明平面上设置图像显示功能。光传感器在平面上，图像捕获单元和图像显示单元被集成以形成图像捕获和显示单元。用户获得与人类本能相容的可操作性，忽略纸和电子媒介之间的差异。

59. 发明授权

US07528408B2 Semiconductor thin film and process for production thereof 有权
标题翻译：半导体薄膜及其制造方法
公开(公告)号：US07528408B2
公开(公告)日：2009-05-05
申请号：US11342602
申请日：2006-01-31
申请人： Kazuo Takeda , Jun Gotou , Masakazu Saito , Makoto Ohkura , Takeshi Satou , Hiroshi Fukuda , Takeo Shiba
发明人： Kazuo Takeda , Jun Gotou , Masakazu Saito , Makoto Ohkura , Takeshi Satou , Hiroshi Fukuda , Takeo Shiba
IPC分类号： H01L29/10
CPC分类号： C30B29/06 , C30B13/00 , Y10S117/904
摘要： To improve the laser annealing process for polycrystallizing amorphous silicon to form silicon thin films having large crystal particle diameters at a high throughput, the present invention is directed to a process of crystallization by irradiation of a semiconductor thin film formed on a substrate with pulsed laser light. The process comprises having a means to shape laser light into a linear beam and a means to periodically and spatially modulate the intensity of pulsed laser in the direction of the long axis of the linear beam by passing through a phase-shifting stripy pattern perpendicular to the long axis, and collectively forming for each shot a polycrystalline film composed of crystals which have grown in a certain direction over the entire region irradiated with the linear beam.
摘要翻译：为了改善多晶非晶硅的激光退火工艺，以高通量形成具有大晶粒直径的硅薄膜，本发明涉及通过用脉冲激光照射形成在基板上的半导体薄膜进行结晶的工艺。该方法包括具有将激光成形为线性光束的装置以及通过穿过垂直于线性光束的相移条纹图案来周期性和空间地调制脉冲激光在线性光束的长轴方向上的强度的装置长轴，并且对于每一次射出，共同形成由在被线束束照射的整个区域上沿一定方向生长的晶体的多晶膜。

60. 发明申请

US20080315191A1 Organic Thin Film Transistor Array and Method of Manufacturing the Same 有权
标题翻译：有机薄膜晶体管阵列及其制造方法
公开(公告)号：US20080315191A1
公开(公告)日：2008-12-25
申请号：US12128993
申请日：2008-05-29
申请人： Tomihiro Hashizume , Yuji Suwa , Masaaki Fujimori , Tadashi Arai , Takeo Shiba
发明人： Tomihiro Hashizume , Yuji Suwa , Masaaki Fujimori , Tadashi Arai , Takeo Shiba
IPC分类号： H01L51/30 , H01L21/70
CPC分类号： H01L27/283 , H01L51/0003 , H01L51/0018 , H01L51/0021
摘要： An n-type TFT and a p-type TFT are realized by selectively changing only a cover coat without changing a TFT material using an equation for applying the magnitude of a difference in the Fermi energy between an interface of semiconductor and an electrode and between an interface of semiconductor and insulator. At this time, in order to configure a predetermined circuit, the process is performed, as a source electrode and a drain electrode of the p-type TFT and a source electrode and a drain electrode of the n-type TFT being connected all, respectively, and an unnecessary interconnection is cut by irradiating light using a scanning laser exposure apparatus or the like.
摘要翻译：通过使用用于施加半导体和电极的界面和电极之间的费米能量的差异的大小的方程式，仅选择性地改变覆盖涂层而不改变TFT材料来实现n型TFT和p型TFT 半导体和绝缘体的界面。此时，为了构成规定的电路，作为p型TFT的源电极和漏电极，n型TFT的源电极和漏极全部分别连接，进行该处理并且通过使用扫描激光曝光装置等照射光而切断不必要的互连。

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