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    • 6. 发明授权
    • Semiconductor IC with dual groove isolation
    • 半导体IC双沟槽隔离
    • US4819054A
    • 1989-04-04
    • US11932
    • 1987-02-06
    • Mikinori KawajiToshihiko TakakuraAkihisa UchidaShigeo KurodaYoichi TamakiTakeo ShibaKazuhiko SagaraMasao Kawamura
    • Mikinori KawajiToshihiko TakakuraAkihisa UchidaShigeo KurodaYoichi TamakiTakeo ShibaKazuhiko SagaraMasao Kawamura
    • H01L21/762H01L21/763H01L29/732H01L27/12
    • H01L21/763H01L21/76224H01L29/7325Y10S148/05
    • A bipolar type of semiconductor integrated circuit device is provided with U-shaped grooves which are formed by cutting a main surface of a semiconductor body to form isolation regions between bipolar transistors. A silicon oxide film can be formed in the U-shaped grooves by thermal oxidation simultaneously with the formation of a silicon oxide film used to form isolation regions between each collector contact region and base region. No separate step is needed for forming the silicon oxide film between the collector contact region and the base region. The thickness of the silicon oxide film can be controlled, and has a sufficient thickness even at its two edges, i.e., at its boundaries with the U-shaped grooves, so that the bipolar transistors exhibit good electrical characteristics. Namely, the collector resistance thereof does not increase, and the breakdown voltage at the pn junction between the collector region and the base region does not decrease. The U-shaped grooves can each comprise narrow and deep sub-grooves, with thick oxide films formed on the surfaces of the sub-grooves and a thick oxide film formed on a surface of an area between the sub-grooves, and with wiring formed on the oxide on the area between the sub-grooves.
    • 双极型半导体集成电路器件设置有通过切割半导体本体的主表面以在双极晶体管之间形成隔离区而形成的U形沟槽。 可以通过热氧化在U形槽中形成氧化硅膜,同时形成用于在每个集电极接触区域和基极区域之间形成隔离区域的氧化硅膜。 在集电极接触区域和基极区域之间形成氧化硅膜不需要单独的步骤。 可以控制氧化硅膜的厚度,并且即使在其两个边缘,即与U形槽的边界处,也具有足够的厚度,使得双极晶体管表现出良好的电特性。 也就是说,其集电极电阻不增加,并且集电极区域和基极区域之间的pn结处的击穿电压不降低。 U形槽可以各自包括窄的和深的子槽,其中形成在子槽的表面上的厚的氧化膜和形成在子槽之间的区域的表面上的厚氧化膜,并且形成有布线 在子槽之间的区域上的氧化物上。