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1. 发明申请

US20080259337A1 BIOLOGICAL OPTICAL MEASURING APPARATUS AND LIGHT DETECTION MODULE 审中-公开
标题翻译：生物光学测量装置和光检测模块
公开(公告)号：US20080259337A1
公开(公告)日：2008-10-23
申请号：US11944064
申请日：2007-11-21
申请人： Kazuhiko SAGARA , Yukio Kumagai , Naoki Matsushima , Masashi Kiguchi
发明人： Kazuhiko SAGARA , Yukio Kumagai , Naoki Matsushima , Masashi Kiguchi
IPC分类号： G01N21/00
CPC分类号： A61B5/0261 , A61B5/6814 , A61B2560/0252 , A61B2562/0233 , A61B2562/046
摘要： A cerebral function measuring apparatus houses a light detector in a package that can be set on the head of the subject examinee with light detection elements, amplifiers, and high voltage power supplies sealed in the package. Each amplifier and each high voltage power supply are united into one and covered with a high polymer material with high dielectric strength, and further enclosed by a metallic shield so as to be insulated. The high voltage power supply consists of a very small coil and an integrated circuit to generate a voltage required to drive the light detection element in the package. A removable and safe module type light detector is thus realized.
摘要翻译：大脑功能测量装置容纳包装中的光检测器，该检测器可以被封装在被检体内的光检测元件，放大器和高压电源上。每个放大器和每个高压电源组合成一个并覆盖有高介电强度的高聚合物材料，并进一步用金属屏蔽物封闭以便被绝缘。高压电源由非常小的线圈和集成电路组成，以产生驱动封装中的光检测元件所需的电压。从而实现了可移动和安全的模块型光检测器。

2. 发明授权

US07145146B2 Micro-spectroscopic measuring device and micro-chemical system 失效
标题翻译：微光谱测量装置和微观化学系统
公开(公告)号：US07145146B2
公开(公告)日：2006-12-05
申请号：US10788275
申请日：2004-03-01
申请人： Taro Ogawa , Toshiki Sugawara , Kazuhiko Hosomi , Masataka Shirai , Toshio Katsuyama , Kaoru Umemura , Masaru Izawa , Kazuhiko Sagara , Hiroshi Kakibayashi
发明人： Taro Ogawa , Toshiki Sugawara , Kazuhiko Hosomi , Masataka Shirai , Toshio Katsuyama , Kaoru Umemura , Masaru Izawa , Kazuhiko Sagara , Hiroshi Kakibayashi
IPC分类号： G01N21/35
CPC分类号： G01N21/31 , B01L3/502715 , B01L2200/027 , B01L2300/0654 , B01L2300/0816 , B01L2300/0887 , G01N21/05 , G01N2021/0346 , G01N2021/058 , G01N2201/0873
摘要： A micro-spectroscopic measuring device having a structure in which a spectroscopic element made of an array of photonic crystals with defects, flow paths for introducing a sample, and light detecting elements with sensitivity to a band from near infrared to infrared are stacked.
摘要翻译：具有这样的结构的微分光学测量装置被堆叠，其中由具有缺陷的光子晶体阵列制成的分光元件，用于引入样品的流动路径和对从近红外线到红外线的频带具有灵敏度的光检测元件。

3. 发明授权

US5118633A Method for manufacturing a BiCMOS semiconductor device 失效
标题翻译：制造BICMOS半导体器件的方法
公开(公告)号：US5118633A
公开(公告)日：1992-06-02
申请号：US557649
申请日：1990-07-25
申请人： Kazuhiko Sagara , Kiyoo Itoh , Goro Kitsukawa , Yoshifumi Kawamoto , Yoshiki Kawajiri
发明人： Kazuhiko Sagara , Kiyoo Itoh , Goro Kitsukawa , Yoshifumi Kawamoto , Yoshiki Kawajiri
IPC分类号： H01L21/8242 , H01L21/8249 , H01L27/06 , H01L27/10 , H01L27/108
CPC分类号： H01L21/8249 , H01L27/0623 , H01L27/10817 , Y10S148/144
摘要： Sources and drains of MOS transistors are formed after the formation of an emitter of a bipolar transistor, whereby the sources and drains are made smaller in thickness than the emitter. Since the sources and drains are not subjected to a high-temperature heat treatment conducted in the formation of the emitter, there is no fear of increase in thickness of the sources and drains caused by the diffusion of impurities. There can be formed a BiCMOS having a high integration density and superior characteristics.

4. 发明授权

US4958320A Radiation resistant bipolar memory 失效
标题翻译：耐辐射双极记忆
公开(公告)号：US4958320A
公开(公告)日：1990-09-18
申请号：US361633
申请日：1989-06-02
申请人： Noriyuki Homma , Tohru Nakamura , Kazuo Nakazato , Motoaki Matsumoto , Tetsuya Hayashida , Masaharu Kubo , Kazuhiko Sagara
发明人： Noriyuki Homma , Tohru Nakamura , Kazuo Nakazato , Motoaki Matsumoto , Tetsuya Hayashida , Masaharu Kubo , Kazuhiko Sagara
IPC分类号： G11C11/411 , H01L27/102
CPC分类号： G11C11/4113 , G11C11/4116 , H01L27/1025
摘要： A bipolar memory of a construction having high immunity to soft error attributable to alpha rays is provided. The transistors of a flip flop, i.e., the essential circuitry of the memory cell, are inverted and the load device thereof has shielding means for shielding the flip flop from the noise produced within the substrate. Bipolar transistors and Schottky barrier diodes are employed as the load devices. A buried layer (ordinarily, an n type layer) and a doped layer of the reverse conductivity type (ordinarily the p type) are formed in a region where the device is provided, and a reverse bias is applied across the buried layer and the doped layer to shut off the noise produced within the substrate.
摘要翻译：提供了具有对由α射线引起的软误差具有高免疫性的结构的双极记忆。触发器的晶体管，即存储器单元的基本电路被反转，并且其负载装置具有屏蔽装置，用于屏蔽触发器与衬底内产生的噪声。采用双极晶体管和肖特基势垒二极管作为负载器件。在设置器件的区域中形成掩埋层（通常为n型层）和反向导电型（通常为p型）的掺杂层，并且跨越掩埋层施加反向偏压，并且掺杂以切断衬底内产生的噪音。

5. 发明授权

US4948599A Continuous production process of cheese curds and production process of cheese therefrom 失效
标题翻译：奶酪凝乳的连续生产过程和奶酪的生产过程
公开(公告)号：US4948599A
公开(公告)日：1990-08-14
申请号：US337554
申请日：1989-04-13
申请人： Kazuhiko Sagara , Kunio Ueda , Toshikazu Shimada , Toshiaki Ishii
发明人： Kazuhiko Sagara , Kunio Ueda , Toshikazu Shimada , Toshiaki Ishii
IPC分类号： A23C19/028 , A23C19/05
CPC分类号： A23C19/051 , A23C19/0285
摘要： Disclosed herein is a process for the continuous and quick production of cheese curds from milk, which comprises cooling a concentrated milk which has been obtained by ultrafiltration, adjusting its pH to 4.8-5.8 without coagulation, adding a milk-coagulating enzyme and/or a lactic acid bacterium starter, and the quickly heating the resultant mixture to 25.degree.-84.degree. C., whereby cheese curds are continuously formed, the heating of the mixture preferably being effected by heating a permeate separated out by the ultrafiltration and then mixing the heated permeate with the mixture. The thus-obtained cheese curds affording cheese having smooth texture.
摘要翻译：本文公开了一种从牛奶中连续快速生产干酪凝乳的方法，其包括冷却通过超滤获得的浓缩乳，将其pH调节至4.8-5.8而不凝结，加入牛奶凝固酶和/或将所得混合物快速加热至25℃-84℃，由此连续形成干酪凝乳，混合物的加热优选通过加热通过超滤分离的渗透物，然后混合加热的与混合物渗透。由此获得的干酪凝乳提供具有光滑质地的干酪。

6. 发明授权

US4819054A Semiconductor IC with dual groove isolation 失效
标题翻译：半导体IC双沟槽隔离
公开(公告)号：US4819054A
公开(公告)日：1989-04-04
申请号：US11932
申请日：1987-02-06
申请人： Mikinori Kawaji , Toshihiko Takakura , Akihisa Uchida , Shigeo Kuroda , Yoichi Tamaki , Takeo Shiba , Kazuhiko Sagara , Masao Kawamura
发明人： Mikinori Kawaji , Toshihiko Takakura , Akihisa Uchida , Shigeo Kuroda , Yoichi Tamaki , Takeo Shiba , Kazuhiko Sagara , Masao Kawamura
IPC分类号： H01L21/762 , H01L21/763 , H01L29/732 , H01L27/12
CPC分类号： H01L21/763 , H01L21/76224 , H01L29/7325 , Y10S148/05
摘要： A bipolar type of semiconductor integrated circuit device is provided with U-shaped grooves which are formed by cutting a main surface of a semiconductor body to form isolation regions between bipolar transistors. A silicon oxide film can be formed in the U-shaped grooves by thermal oxidation simultaneously with the formation of a silicon oxide film used to form isolation regions between each collector contact region and base region. No separate step is needed for forming the silicon oxide film between the collector contact region and the base region. The thickness of the silicon oxide film can be controlled, and has a sufficient thickness even at its two edges, i.e., at its boundaries with the U-shaped grooves, so that the bipolar transistors exhibit good electrical characteristics. Namely, the collector resistance thereof does not increase, and the breakdown voltage at the pn junction between the collector region and the base region does not decrease. The U-shaped grooves can each comprise narrow and deep sub-grooves, with thick oxide films formed on the surfaces of the sub-grooves and a thick oxide film formed on a surface of an area between the sub-grooves, and with wiring formed on the oxide on the area between the sub-grooves.
摘要翻译：双极型半导体集成电路器件设置有通过切割半导体本体的主表面以在双极晶体管之间形成隔离区而形成的U形沟槽。可以通过热氧化在U形槽中形成氧化硅膜，同时形成用于在每个集电极接触区域和基极区域之间形成隔离区域的氧化硅膜。在集电极接触区域和基极区域之间形成氧化硅膜不需要单独的步骤。可以控制氧化硅膜的厚度，并且即使在其两个边缘，即与U形槽的边界处，也具有足够的厚度，使得双极晶体管表现出良好的电特性。也就是说，其集电极电阻不增加，并且集电极区域和基极区域之间的pn结处的击穿电压不降低。 U形槽可以各自包括窄的和深的子槽，其中形成在子槽的表面上的厚的氧化膜和形成在子槽之间的区域的表面上的厚氧化膜，并且形成有布线在子槽之间的区域上的氧化物上。

7. 发明授权

US5258620A Method and apparatus for determining the constituents of dairy products 失效
标题翻译：用于确定乳制品成分的方法和装置
公开(公告)号：US5258620A
公开(公告)日：1993-11-02
申请号：US773921
申请日：1991-10-30
申请人： Ryoichi Sueyasu , Mayumi Watanabe , Kazuhiko Sagara , Hidehiko Kaya
发明人： Ryoichi Sueyasu , Mayumi Watanabe , Kazuhiko Sagara , Hidehiko Kaya
IPC分类号： G01N21/35 , G01N21/359 , G01N33/04
CPC分类号： G01N21/359 , G01N21/3577 , G01N33/04 , G01N2201/129 , Y10S250/91
摘要： A sample having a specific optical path length of 1 to 15 mm is irradiated with near infrared of two or more wavelengths selected from 700 to 1200 nm to determine constituents of dairy products. Preferably, a pair of specific wavelengths comprise a first wavelength having a high correlation with a target constituent and a second wavelength having a low correlation with the target constituent or comprise wavelengths both having high correlations with the target constitutent. Quantities of near infrared of these two specific wavelengths transmitted by the sample are measured to determine absorbencies and a multiple linear regression equation is used to calculate the constituent on the basis of the absorbencies.
摘要翻译：照射具有1〜15mm的特定光程长度的样品，从700〜1200nm的两个以上的波长的近红外线照射，测定乳制品的成分。优选地，一对特定波长包括与目标成分具有高相关性的第一波长和与目标成分具有低相关性的第二波长或包括与目标成分具有高相关性的波长。测量由样品传输的这两种特定波长的近红外光量以确定吸光度，并且使用多元线性回归方程式根据吸光度计算成分。

8. 发明授权

US5011788A Process of manufacturing semiconductor integrated circuit device and product formed thereby 失效
标题翻译：制造半导体集成电路器件的工艺和由此形成的产品
公开(公告)号：US5011788A
公开(公告)日：1991-04-30
申请号：US284557
申请日：1988-12-15
申请人： Mikinori Kawaji , Toshihiko Takakura , Akihisa Uchida , Shigeo Kuroda , Yoichi Tamaki , Takeo Shiba , Kazuhiko Sagara , Masao Kawamura
发明人： Mikinori Kawaji , Toshihiko Takakura , Akihisa Uchida , Shigeo Kuroda , Yoichi Tamaki , Takeo Shiba , Kazuhiko Sagara , Masao Kawamura
IPC分类号： H01L21/762 , H01L21/763 , H01L29/732
CPC分类号： H01L21/763 , H01L21/76224 , H01L29/7325 , Y10S148/05
摘要： A bipolar type of semiconductor integrated circuit device is provided with U-shaped grooves which are formed by cutting a main surface of a semiconductor body to form isolation regions between bipolar transistors. A silicon oxide film can be formed in the U-shaped grooves by thermal oxidation simultaneously with the formation of a silicon oxide film used to form isolation regions between each collector contact region and base region. No separate step is needed for forming the silicon oxide film between the collector contact region and the base region. The thickness of the silicon oxide film can be controlled, and has a sufficient thickness even at its two edges, i.e., at its boundaries with the U-shaped grooves, so that the bipolar transistors exhibit good electrical characteristics. Namely, the collector resistance thereof does not increase, and the breakdown voltage at the pn junction between the collector region and the base region does not decrease. The U-shaped grooves can each comprise narrow and deep sub-grooves, with thick oxide films formed on the surfaces of the sub-grooves and a thick oxide film formed on a surface of an area between the sub-grooves, and with wiring formed on the oxide on the area between the sub-grooves.

9. 发明授权

US4984048A Semiconductor device with buried side contact 失效
标题翻译：半导体器件具有掩埋侧接触
公开(公告)号：US4984048A
公开(公告)日：1991-01-08
申请号：US216536
申请日：1988-07-08
申请人： Kazuhiko Sagara , Tokuo Kure , Eiichi Murakami , Tohru Nakamura , Masanobu Miyao , Masao Kondo , Akitoshi Ishizaka , Yoichi Tamaki
发明人： Kazuhiko Sagara , Tokuo Kure , Eiichi Murakami , Tohru Nakamura , Masanobu Miyao , Masao Kondo , Akitoshi Ishizaka , Yoichi Tamaki
IPC分类号： H01L21/74 , H01L21/763 , H01L29/06 , H01L29/417 , H01L29/732 , H01L29/737
CPC分类号： H01L29/0649 , H01L21/743 , H01L21/763 , H01L29/41716 , H01L29/7325 , H01L29/7327 , H01L29/7378
摘要： Polycrystalline silicon which is provided within a trench for isolating a plurality of bipolar transistors from each other is electrically connected to the collector of one of the bipolar transistor. Since the trench for isolation can also be used to lead out the collector electrode, the required area is minimized. Thus, the arrangement is effective in creasing the integration density.
摘要翻译：设置在用于将多个双极晶体管彼此隔离的沟槽内的多晶硅电连接到双极晶体管之一的集电极。由于用于隔离的沟槽也可以用于引出集电极，因此所需的面积被最小化。因此，这种布置在增加集成密度方面是有效的。

10. 发明授权

US4829361A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4829361A
公开(公告)日：1989-05-09
申请号：US120921
申请日：1987-11-16
申请人： Kazuhiko Sagara , Tohru Nakamura , Kazuo Nakazato , Tokuo Kure , Kiyoji Ikeda , Noriyuki Homma
发明人： Kazuhiko Sagara , Tohru Nakamura , Kazuo Nakazato , Tokuo Kure , Kiyoji Ikeda , Noriyuki Homma
IPC分类号： H01L29/73 , H01L21/331 , H01L21/74 , H01L21/762 , H01L21/8229 , H01L21/8234 , H01L27/088 , H01L27/10 , H01L27/102 , H01L29/732
CPC分类号： H01L27/1025 , H01L21/74 , H01L21/762 , Y10S257/906
摘要： A semiconductor device wherein a layer doped with impurities is provided between a buried layer and an epitaxial layer, said layer doped with impurities having a conductivity of the type opposite to that of said buried layer and said epitaxial layer, a reversely biasing voltage is applied across the buried layer and the layer doped with impurities, and side surfaces of the epitaxial layer are surrounded by an insulator.This helps effectively prevent the element formed in the epitaxial layer from being affected by .alpha.-particles and greatly improve reliability of the semiconductor device.
摘要翻译：一种半导体器件，其中在掩埋层和外延层之间提供掺杂有杂质的层，所述层掺杂有与所述掩埋层和所述外延层的导电类型相反的导电类型的杂质，施加反向偏置电压掺杂有杂质的掩埋层和层，外延层的侧表面被绝缘体包围。这有助于有效地防止外延层中形成的元件受到α-粒子的影响，并且极大地提高了半导体器件的可靠性。

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