专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明授权

US07372080B2 Gan semiconductor device 有权
标题翻译：甘半导体器件
公开(公告)号：US07372080B2
公开(公告)日：2008-05-13
申请号：US10517877
申请日：2003-06-19
申请人： Osamu Goto , Osamu Matsumoto , Tomomi Sasaki , Masao Ikeda
发明人： Osamu Goto , Osamu Matsumoto , Tomomi Sasaki , Masao Ikeda
IPC分类号： H01L29/22 , H01L33/00
CPC分类号： H01S5/0207 , H01S5/0014 , H01S5/0422 , H01S5/2201 , H01S5/32341
摘要： Provided is a GaN-based semiconductor light emitting device formed on a GaN single-crystal substrate and having a configuration capable of reducing a current leak.A GaN-based semiconductor laser device (50) is disclosed as an example of the GaN-based semiconductor light emitting device, and it is a semiconductor laser device having a structure such that a p-side electrode and an n-side electrode are provided on a multilayer structure of GaN-based compound semiconductor layers. The GaN-based semiconductor laser device (50) is similar in configuration to a conventional GaN-based semiconductor laser device formed on a sapphire substrate except that a GaN single-crystal substrate (52) is used in place of the sapphire substrate and that the multilayer structure is directly formed on the GaN single-crystal substrate (52) without providing a GaN-ELO structure layer. The GaN single-crystal substrate (52) has continuous belt-shaped core portions (52a) each having a width of 10 μm. These core portions (52a) are spaced apart from each other by a distance of about 400 μm. A laser stripe (30), a pad metal (37) for the p-side electrode (36), and the n-side electrode (38) are provided on the multilayer structure in a region except the core portions (52a) of the GaN single-crystal substrate (52). The horizontal distance Sp between the pad metal (37) and the core portion (52a) adjacent thereto is 95 μm, and the horizontal distance Sn between the n-side electrode (38) and the core portion (52a) adjacent thereto is also 95 μm.
摘要翻译：提供了一种形成在GaN单晶衬底上并具有能够减少电流泄漏的构造的GaN基半导体发光器件。作为GaN系半导体发光元件的一例，公开了GaN系半导体激光元件（50），是具有p侧电极和n侧电极的结构的半导体激光元件在GaN基化合物半导体层的多层结构上。 GaN基半导体激光器件（50）的结构与形成在蓝宝石衬底上的常规GaN基半导体激光器器件相似，除了使用GaN单晶衬底（52）代替蓝宝石衬底，并且多层结构直接形成在GaN单晶衬底（52）上，而不提供GaN-ELO结构层。 GaN单晶衬底（52）具有宽度为10μm的连续的带状芯部（52a）。这些芯部分（52a）彼此隔开约400μm的距离。激光条纹（30），用于p侧电极（36）的焊盘金属（37）和n侧电极（38）设置在除了芯部（52a）的芯部 GaN单晶衬底（52）。焊垫金属（37）与与其相邻的芯部（52a）之间的水平距离Sp为95μm，n侧电极（38）与与其相邻的芯部（52a）之间的水平距离Sn为也是95妈妈。

52. 发明申请

US20060076566A1 Light emitting device and optical device using the same 失效
公开(公告)号：US20060076566A1
公开(公告)日：2006-04-13
申请号：US11242768
申请日：2005-10-04
申请人： Masao Ikeda
发明人： Masao Ikeda
IPC分类号： H01L33/00
CPC分类号： B82Y20/00 , G11B7/1275 , G11B2007/0006 , H01L25/0753 , H01L25/0756 , H01L2924/0002 , H01S5/02212 , H01S5/0224 , H01S5/02268 , H01S5/02272 , H01S5/02276 , H01S5/0425 , H01S5/2214 , H01S5/2231 , H01S5/32341 , H01S5/34326 , H01S5/34333 , H01S5/347 , H01S5/4043 , H01S5/4087 , H04N9/315 , H01L2924/00
摘要： A light emitting device which can be easily manufactured and can control the positions of light emission precisely, and an optical device. A first and second light emitting elements are formed on one face of a supporting base. The first light emitting element has an active layer made of GaInN mixed crystal on a GaN-made first substrate on the side thereof on which the supporting base is disposed. The second light emitting element has lasing portions on a GaAs-made second substrate on the side thereof on which the supporting base is disposed. Since the first and second light emitting elements are not grown on the same substrate, a multiple-wavelength laser having the output wavelength of around 400 nm can be easily obtained. Since the first substrate is transparent in the visible region, the positions of light emitting regions in the first and second light emitting elements can be precisely controlled by lithography.

53. 发明申请

US20050145879A1 Nitride semiconductor wafer and method of processing nitride semiconductor wafer 有权
标题翻译：氮化物半导体晶片和氮化物半导体晶片的加工方法
公开(公告)号：US20050145879A1
公开(公告)日：2005-07-07
申请号：US11055599
申请日：2005-02-11
申请人： Masahiro Nakayama , Naoki Matsumoto , Koshi Tamamura , Masao Ikeda
发明人： Masahiro Nakayama , Naoki Matsumoto , Koshi Tamamura , Masao Ikeda
IPC分类号： B24B37/00 , C30B29/38 , H01L21/20 , H01L21/304 , H01L21/306 , H01L33/00 , H01L21/00
CPC分类号： H01L21/02008 , B24B37/08 , H01L21/02024 , Y10S438/959
摘要： Nitride semiconductor wafers which are produced by epitaxially grown nitride films on a foreign undersubstrate in vapor phase have strong inner stress due to misfit between the nitride and the undersubstrate material. A GaN wafer which has made by piling GaN films upon a GaAs undersubstrate in vapor phase and eliminating the GaAs undersubstrate bends upward due to the inner stress owing to the misfit of lattice constants between GaN and GaAs. Ordinary one-surface polishing having the steps of gluing a wafer with a surface on a flat disc, bringing another surface in contact with a lower turntable, pressing the disc, rotating the disc, revolving the turntable and whetting the lower surface, cannot remedy the inherent distortion. The Distortion worsens morphology of epitaxial wafers, lowers yield of via-mask exposure and invites cracks on surfaces. Nitride crystals are rigid but fragile. Chemical/mechanical polishing has been requested in vain. Current GaN wafers have roughened bottom surfaces, which induce contamination of particles and fluctuation of thickness. Circular nitride wafers having a diameter larger than 45 mm are made and polished. Gross-polishing polishes the nitride wafers in a pressureless state with pressure less than 60 g/cm2 by lifting up the upper turntable for remedying distortion. Distortion height H at a center is reduced to H≦12 μm. Minute-polishing is a newly-contrived CMP which polishes the nitride wafers with a liquid including potassium hydroxide, potassium peroxodisulfate and powder, irradiates the potassium peroxodisulfate with ultraviolet rays. The CMP-polished top surface has roughness RMS of 0.1 nm≦RMS≦5 nm or more favorably 0.1 nm≦RMS≦0.5 nm. The CMP-polished bottom surface has roughness RMS of 0.1 nm≦RMS≦5000 nm or more favorably 0.1 nm≦RMS≦2 nm. TTV is less than 10 μm.
摘要翻译：由氮化物和下衬底材料之间的失配导致的，由外延生长的氮化物膜在气相中的外来下衬衬底产生的氮化物半导体晶片具有很强的内部应力。通过在气相中在GaAs下衬底上堆叠GaN膜而消除GaAs下衬层而制成的GaN晶片由于内部应力而由于GaN和GaAs之间的晶格常数的失配而向上弯曲。通常的单面抛光具有将晶片与平面盘上的表面胶合的步骤，使另一表面与下转台接触，按压盘，旋转盘，旋转转台并磨削下表面，不能补救固有失真。失真会加剧外延晶片的形态，降低通孔掩模曝光的产量，并引起表面裂纹。氮化物晶体是刚性但脆弱的。化学/机械抛光已被要求徒劳。当前的GaN晶圆已经粗糙化了底面，这引起了颗粒的污染和厚度的波动。制造和抛光直径大于45mm的圆形氮化物晶片。通过抬起上转盘来补偿变形，粗抛光在压力低于60g / cm 2的无压状态下抛光氮化物晶片。中心处的失真高度H降低到H <= 12 mum。分钟抛光是一种新设计的CMP，它们用含氢氧化钾，过氧硫酸钾和粉末的液体对氮化物晶片进行抛光，用紫外线照射过氧二硫酸钾。 CMP抛光的顶表面的粗糙度RMS为0.1nm <= RMS <= 5nm或更优选为0.1nm <= RMS <= 0.5nm。 CMP抛光的底表面的粗糙度RMS为0.1nm <= RMS <= 5000nm或更优选为0.1nm <= RMS <= 2nm。 TTV小于10妈

54. 发明申请

US20050054585A1 Agent controlling the production of osteoclast formation regulator and method of screening substance capable of controlling the production of osteoclast formation regulator 审中-公开
标题翻译：控制破骨细胞形成调节剂生产的药剂和筛选能够控制破骨细胞形成调节剂生产的物质的方法
公开(公告)号：US20050054585A1
公开(公告)日：2005-03-10
申请号：US10492703
申请日：2002-10-11
申请人： Toshio Ariyasu , Toshiharu Hanaya , Shigeyuki Arai , Masao Ikeda , Masashi Kurimoto
发明人： Toshio Ariyasu , Toshiharu Hanaya , Shigeyuki Arai , Masao Ikeda , Masashi Kurimoto
IPC分类号： G01N33/50 , A61K31/70 , A61K31/7004 , A61K31/7016 , A61K33/06 , A61K45/06 , A61P19/00 , A61P19/02 , A61P19/08 , A61P43/00 , C07H3/02 , C07H3/04 , C12Q1/02 , G01N33/15 , A61K31/7012
CPC分类号： A61K45/06 , A61K31/70 , A61K33/06 , G01N2333/70578 , G01N2500/10 , A61K2300/00
摘要： A process for producing a polyether polymer by polymerizing a monomer having an oxirane group in the presence of a Lewis base having no active hydrogen such as, for example, a nitrile compound, a cyclic ether compound or an ester compound; and a polyether polymer produced by this process. Thus, a polyether polymer having a minimized amount of undesirable crosslinked product can be produced without reduction of polymerization activity.
摘要翻译：在具有例如腈化合物，环醚化合物或酯化合物的无活性氢的路易斯碱的存在下聚合具有环氧乙烷基团的单体的聚醚聚合物的制造方法; 和通过该方法制备的聚醚聚合物。因此，可以在不降低聚合活性的情况下制备具有最小量的不需要的交联产物的聚醚聚合物。

55. 发明申请

US20050040409A1 Semiconductor light emitting device and its manufacturing method 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20050040409A1
公开(公告)日：2005-02-24
申请号：US10932697
申请日：2004-09-02
申请人： Motonobu Takeya , Takeharu Asano , Masao Ikeda
发明人： Motonobu Takeya , Takeharu Asano , Masao Ikeda
IPC分类号： H01L33/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01S5/02 , H01S5/20 , H01S5/32 , H01S5/323 , H01S5/343 , H01L29/06
CPC分类号： B82Y20/00 , H01L33/007 , H01L33/02 , H01L33/04 , H01S5/0213 , H01S5/2004 , H01S5/3216 , H01S5/34333
摘要： In a semiconductor light emitting device such as a semiconductor laser using nitride III-V compound semiconductors and having a structure interposing an active layer between an n-side cladding layer and a p-side cladding layer, the p-side cladding layer is made of an undoped or n-type first layer 9 and a p-type second layer 12 that are deposited sequentially from nearer to remoter from the active layer. The first layer 9 is not thinner than 50 nm. The p-type second layer 12 includes a p-type third layer having a larger band gap inserted therein as an electron blocking layer. Thus the semiconductor light emitting device is reduced in operation voltage while keeping a thickness of the p-side cladding layer necessary for ensuring favorable optical properties.
摘要翻译：在使用氮化物III-V族化合物半导体的半导体激光器等半导体发光装置中，在n侧包覆层和p侧覆层之间具有活性层的结构，p侧包覆层由未掺杂或n型第一层9和p型第二层12，其从有源层更接近地远离沉积。第一层9不比50nm薄。 p型第二层12包括其中插入较大带隙的p型第三层作为电子阻挡层。因此，为了确保良好的光学性能，半导体发光器件的操作电压降低，同时保持p侧覆层的厚度。

56. 发明授权

US06836498B2 Semiconductor laser, semiconductor device and nitride series III-V group compound substrate, as well as manufacturing method thereof 失效
标题翻译：半导体激光器，半导体器件和氮化物系III-V族复合衬底及其制造方法
公开(公告)号：US06836498B2
公开(公告)日：2004-12-28
申请号：US09874828
申请日：2001-06-05
申请人： Motonobu Takeya , Katsunori Yanashima , Takeharu Asano , Osamu Goto , Shinro Ikeda , Katsuyoshi Shibuya , Tomonori Hino , Satoru Kijima , Masao Ikeda
发明人： Motonobu Takeya , Katsunori Yanashima , Takeharu Asano , Osamu Goto , Shinro Ikeda , Katsuyoshi Shibuya , Tomonori Hino , Satoru Kijima , Masao Ikeda
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01L21/0237 , H01L21/02378 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L33/0075 , H01S5/0207 , H01S5/0422 , H01S5/22 , H01S5/34333 , H01S2304/12
摘要： A semiconductor laser, a semiconductor device and a nitride series III-V group compound substrate capable of obtaining a crystal growth layer with less fluctuation of the crystallographic axes and capable of improving the device characteristics, as well as a manufacturing method therefor are provided. The semiconductor laser comprises, on one surface of a substrate used for growing, a plurality of spaced apart seed crystal layers and an n-side contact layer having a lateral growing region which is grown on the basis of the plurality of seed crystal layers. The seed crystal layer is formed in that a product of width w1 (unit: &mgr;m) at the boundary thereof relative to the n-side contact layer along the arranging direction A and a thickness t1 (unit: &mgr;m) along the direction of laminating the n-side contact layer is 15 or less. A semiconductor layer comprising a nitride series III-V group compound semiconductor is laminated on a substrate 11 comprising an n-type GaN. Protruded seed crystal portions are formed and a growth suppression layer having an opening corresponding to the seed crystal portion is disposed to the substrate. The semiconductor layer grows on the basis of the seed crystal portion and has a lateral growing region of low dislocation density.
摘要翻译：提供能够获得晶体轴的波动较小并且能够提高器件特性的晶体生长层的半导体激光器，半导体器件和氮化物系III-V族化合物基片及其制造方法。半导体激光器在用于生长的基板的一个表面上包括多个间隔开的晶种层和具有基于多个晶种层生长的侧向生长区域的n侧接触层。晶种层形成为沿着排列方向A相对于n侧接触层的边界处的宽度w1（单位：毫姆）的乘积和层叠方向的厚度t1（单位：毫姆） n侧接触层为15以下。在包含n型GaN的基板11上层叠包含氮化物系III-V族化合物半导体的半导体层。形成突出的晶种部分，并且将具有与晶种部分对应的开口的生长抑制层设置在基板上。半导体层基于晶种部分生长，具有低位错密度的侧向生长区域。

57. 发明授权

US06509579B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06509579B2
公开(公告)日：2003-01-21
申请号：US09760959
申请日：2001-01-16
申请人： Motonobu Takeya , Katsunori Yanashima , Masao Ikeda , Takeharu Asano , Shinro Ikeda , Tomonori Hino , Katsuyoshi Shibuya
发明人： Motonobu Takeya , Katsunori Yanashima , Masao Ikeda , Takeharu Asano , Shinro Ikeda , Tomonori Hino , Katsuyoshi Shibuya
IPC分类号： H01L2906
CPC分类号： H01L21/02378 , H01L21/0242 , H01L21/02422 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/0265 , H01L33/007 , H01S5/32341 , H01S2304/12
摘要： To provide a semiconductor device capable of preventing the bowing of the substrate, and having a semiconductor layer of a III-V group compound of a nitride system with excellent crystallinity. The semiconductor layer of the III-V group compound of the nitride system whose thickness is equal to or less than 8 &mgr;m, is provided onto a substrate made of sapphire. This reduces the bowing of the substrate due to differences in a thermal expansion coefficient and a lattice constant between the substrate and the semiconductor layer of the III-V group compound of the nitride system. An n-side contact layer forming the semiconductor layer of the III-V group of the nitride system has partially a lateral growth region made by growing in a lateral direction from a crystalline part of a seed crystal layer. In the lateral growth region, dislocation density restricts low, therefore, regions corresponding to the lateral growth region of each layer formed onto the n-side contact layer has excellent crystallinity.
摘要翻译：提供能够防止基板弯曲的半导体器件，并且具有具有优异结晶度的氮化物系的III-V族化合物的半导体层。氮化物体系的III-V族化合物的半导体层的厚度等于或小于8μm，设置在由蓝宝石制成的基板上。由于氮化物系III-V族化合物的基板与半导体层之间的热膨胀系数和晶格常数的差异，这减少了基板的弯曲。形成氮化物体系的III-V族的半导体层的n侧接触层部分地是由晶种层的结晶部分沿横向生长而形成的横向生长区域。在横向生长区域中，位错密度低，因此，与形成在n侧接触层上的各层的横向生长区域对应的区域具有优异的结晶性。

58. 发明授权

US4790913A Method for producing an Sn-based multilayer coated steel strip having improved corrosion resistance, weldability and lacquerability 失效
标题翻译：具有改善的耐腐蚀性，焊接性和可漆性的Sn基多层涂层钢带的制造方法
公开(公告)号：US4790913A
公开(公告)日：1988-12-13
申请号：US71974
申请日：1987-07-10
申请人： Seizun Higuchi , Tomonari Oga , Masao Ikeda , Hirohumi Nakano
发明人： Seizun Higuchi , Tomonari Oga , Masao Ikeda , Hirohumi Nakano
IPC分类号： C23C22/00 , C23C22/24 , C23C28/00 , C25D3/56 , C25D5/10 , C25D5/50 , C25D11/38 , B32B15/01
CPC分类号： C25D11/38 , C25D3/562 , C25D5/10 , C25D5/505 , Y10T428/12583 , Y10T428/12611 , Y10T428/12708 , Y10T428/12722
摘要： The Sn based multilayer coated steel strip for container-use is improved by the provision of a novel underyling coating of ternary Fe-Ni-P alloy which, mainly because of the Ni component, ensures a uniform deposition of the Sn layer, and mainly because of the P and Fe contents ensure a satisfactory remaining amount of free Sn for improving the weldability. The steel strip has a thin Sn plated layer and a chromate coating layer on the underlying coating.

59. 发明授权

US09212961B2 Grinding abnormality monitoring method and grinding abnormality monitoring device 有权
标题翻译：研磨异常监测方法和研磨异常监测装置
公开(公告)号：US09212961B2
公开(公告)日：2015-12-15
申请号：US13884777
申请日：2011-12-22
申请人： Tomoyuki Kasuga , Atsushi Saito , Takayuki Yoshimi , Masao Ikeda
发明人： Tomoyuki Kasuga , Atsushi Saito , Takayuki Yoshimi , Masao Ikeda
IPC分类号： G01L5/12 , G01L5/00 , B24B49/16 , B24B19/06 , B24B49/00 , B24B49/10 , B24B49/14 , B24B5/04
CPC分类号： G01L5/0076 , B24B5/04 , B24B19/06 , B24B49/003 , B24B49/105 , B24B49/14 , B24B49/16 , G01L5/12
摘要： A grinding abnormality monitoring method and device for grinding a plurality of works of the same type are proposed which can improve the accuracy of judgment whether an abnormality is generated or not by properly setting a threshold value. According to the method or the device, by setting at least one of upper and lower limit values of a trial grinding load detected at the trial grinding of at least one of the works, an occurrence of grinding abnormality is judged when an actual grinding load detected at the actual grinding of work exceeds at least one of the upper and lower limit values thereof which varies depending on the time elapsed from the start of the actual grinding or a position of work relative to a grinding wheel.
摘要翻译：提出了一种用于研磨相同类型的多个作业的研磨异常监测方法和装置，其可以通过适当地设定阈值来提高判断是否产生异常的判断精度。根据该方法或装置，通过设定在至少一个工件的试磨中检测到的试验研磨载荷的上限值和下限值中的至少一个，当检测到实际研磨载荷时，判断出磨削异常的发生在实际的工件磨削中，超过其上下限值中的至少一个，这些上限值和下限值根据实际磨削开始时所经过的时间或相对于砂轮的工作位置而变化。

60. 发明授权

US08786941B2 Semiconductor optical amplifier 有权
标题翻译：半导体光放大器
公开(公告)号：US08786941B2
公开(公告)日：2014-07-22
申请号：US13166900
申请日：2011-06-23
申请人： Masaru Kuramoto , Masao Ikeda , Rintaro Koda , Tomoyuki Oki , Hideki Watanabe , Takao Miyajima , Hiroyuki Yokoyama
发明人： Masaru Kuramoto , Masao Ikeda , Rintaro Koda , Tomoyuki Oki , Hideki Watanabe , Takao Miyajima , Hiroyuki Yokoyama
IPC分类号： H01S5/00
CPC分类号： H01S5/1064 , H01S5/0425 , H01S5/0602 , H01S5/0657 , H01S5/16 , H01S5/22 , H01S5/32341 , H01S5/34333 , H01S5/50
摘要： A semiconductor optical amplifier includes: a laminated structure sequentially including a first compound semiconductor layer composed of GaN compound semiconductor and having a first conductivity type, a third compound semiconductor layer having a light amplification region composed of GaN compound semiconductor, and a second compound semiconductor layer composed of GaN compound semiconductor and having a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The laminated structure has a ridge stripe structure. When widths of the ridge stripe structure in a light output end face and the ridge stripe structure in a light incident end face are respectively Wout, and Win, Wout>Win is satisfied. A carrier non-injection region is provided in an internal region of the laminated structure from the light output end face along an axis line of the semiconductor optical amplifier.
摘要翻译：半导体光放大器包括：依次包括由GaN化合物半导体构成的第一化合物半导体并具有第一导电类型的层压结构，具有由GaN化合物半导体构成的光放大区域的第三化合物半导体层和第二化合物半导体层由GaN化合物半导体构成并具有第二导电类型; 形成在第二化合物半导体层上的第二电极; 和与第一化合物半导体层电连接的第一电极。层叠结构具有脊形条纹结构。当光输出端面中的棱条结构的宽度和光入射端面中的脊条纹结构的宽度分别为Wout时，满足Win，Wout> Win。载体非注入区域沿着半导体光放大器的轴线从光输出端面设置在层叠结构的内部区域中。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式