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1. 发明授权

US09219346B2 Laser diode assembly 有权
公开(公告)号：US09219346B2
公开(公告)日：2015-12-22
申请号：US13267509
申请日：2011-10-06
申请人： Shunsuke Kono , Hiroyuki Yokoyama , Masaru Kuramoto , Tomoyuki Oki
发明人： Shunsuke Kono , Hiroyuki Yokoyama , Masaru Kuramoto , Tomoyuki Oki
IPC分类号： H01S3/098 , H01S5/065 , B82Y20/00 , H01S5/14 , H01S5/028 , H01S5/30 , H01S5/32 , H01S5/343
CPC分类号： H01S5/0657 , B82Y20/00 , H01S5/0287 , H01S5/141 , H01S5/3063 , H01S5/3202 , H01S5/3216 , H01S5/34333
摘要： A laser diode assembly includes: a mode-locked laser diode device; a diffraction grating that configures an external resonator, returns primary or more order diffracted light to the mode-locked laser diode device, and outputs 0-order diffracted light outside; and an imaging section provided between the mode-locked laser diode device and the diffraction grating and imaging an image of a light output end face of the mode-locked laser diode device on the diffraction grating.

2. 发明授权

US08917753B2 Alignment method of semiconductor optical amplifier and light output device 有权
标题翻译：半导体光放大器和光输出装置的对准方法
公开(公告)号：US08917753B2
公开(公告)日：2014-12-23
申请号：US13163251
申请日：2011-06-17
申请人： Tomoyuki Oki , Rintaro Koda , Masaru Kuramoto , Takao Miyajima , Hiroyuki Yokoyama
发明人： Tomoyuki Oki , Rintaro Koda , Masaru Kuramoto , Takao Miyajima , Hiroyuki Yokoyama
IPC分类号： H01S5/00 , B82Y20/00 , H01S5/50 , H01S5/14 , H01S5/065 , H01S5/10 , H01S5/40 , H01S5/343 , H01S5/06 , H01S5/0625 , H01S5/028
CPC分类号： H01S5/50 , B82Y20/00 , H01S5/0014 , H01S5/0064 , H01S5/0071 , H01S5/028 , H01S5/0601 , H01S5/0625 , H01S5/0657 , H01S5/1003 , H01S5/1014 , H01S5/141 , H01S5/2009 , H01S5/22 , H01S5/34333 , H01S5/4006
摘要： Provided is an alignment method of a semiconductor optical amplifier with which optimization of coupling efficiency between incident laser light and light waveguide of the semiconductor optical amplifier is enabled without depending on an external monitoring device. The alignment method of a semiconductor optical amplifier is a method that optically amplifies laser light from a laser light source and outputs the optically amplified laser light, which adjusts relative position of the semiconductor optical amplifier with respect to the laser light entering into the semiconductor optical amplifier by flowing a given value of current to the semiconductor optical amplifier while entering the laser light from the laser light source to the semiconductor optical amplifier so that a voltage applied to the semiconductor optical amplifier becomes the maximum.
摘要翻译：提供了一种半导体光放大器的对准方法，其能够使得半导体光放大器的入射激光与光波导之间的耦合效率优化，而不依赖于外部监视装置。半导体光放大器的对准方法是光学地放大来自激光源的激光的方法，并输出光放大激光，该激光调整半导体光放大器相对于进入半导体光放大器的激光的相对位置通过在从激光源向半导体光放大器进入激光的同时将给定的电流值流向半导体光放大器，使得施加到半导体光放大器的电压变为最大。

3. 发明授权

US08450752B2 Semiconductor device and method of manufacturing the same 有权
公开(公告)号：US08450752B2
公开(公告)日：2013-05-28
申请号：US12929515
申请日：2011-01-31
申请人： Rintaro Koda , Takahiro Arakida , Yuji Masui , Tomoyuki Oki
发明人： Rintaro Koda , Takahiro Arakida , Yuji Masui , Tomoyuki Oki
IPC分类号： H01L31/12
CPC分类号： H01S5/0262 , H01S5/0264 , H01S5/0425 , H01S5/18311 , H01S5/18375
摘要： The present invention provides a semiconductor device realizing reduced occurrence of a defect such as a crack at the time of adhering elements to each other. The semiconductor device includes a first element and a second element adhered to each other. At least one of the first and second elements has a pressure relaxation layer on the side facing the other of the first and second elements, and the pressure relaxation layer includes a semiconductor part having a projection/recess part including a projection projected toward the other element, and a resin part filled in a recess in the projection/recess part.

4. 发明授权

US08442079B2 Mode-locked semiconductor laser device and driving method thereof 有权
标题翻译：锁模半导体激光器件及其驱动方法
公开(公告)号：US08442079B2
公开(公告)日：2013-05-14
申请号：US13035540
申请日：2011-02-25
申请人： Tomoyuki Oki , Masaru Kuramoto , Masao Ikeda , Takao Miyajima , Hideki Watanabe , Hiroyuki Yokoyama
发明人： Tomoyuki Oki , Masaru Kuramoto , Masao Ikeda , Takao Miyajima , Hideki Watanabe , Hiroyuki Yokoyama
IPC分类号： H01S3/098
摘要： Provided is a driving method of a mode-locked semiconductor laser device comprising a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer having an emission region and a second compound semiconductor layer are successively laminated, a second electrode, and a first electrode. The laminated structure is formed on a compound semiconductor substrate having polarity, the third compound semiconductor layer includes a quantum well structure having a well layer and a barrier layer. The well layer has a depth of 1 nm or more and 10 nm or less. The barrier layer has an impurity doping density of 2×1018 cm−3 or more and 1×1020 cm−3 or less. An optical pulse is generated in the emission region by passing a current from the second electrode to the first electrode via the laminated structure.
摘要翻译：提供了一种锁模半导体激光器件的驱动方法，其包括层叠结构，其中第一化合物半导体层，具有发射区域的第三化合物半导体层和第二化合物半导体层被连续层压，第二电极和第一电极。层叠结构形成在具有极性的化合物半导体基板上，第三化合物半导体层包括具有阱层和阻挡层的量子阱结构。阱层的深度为1nm以上且10nm以下。势垒层的杂质掺杂密度为2×1018cm-3以上且1×1020cm-3以下。通过将电流从第二电极通过层压结构传递到第一电极，在发射区域中产生光脉冲。

5. 发明授权

US08290005B2 Method of driving a laser diode 失效
公开(公告)号：US08290005B2
公开(公告)日：2012-10-16
申请号：US13212244
申请日：2011-08-18
申请人： Hiroyuki Yokoyama , Shunsuke Kono , Tomoyuki Oki , Masao Ikeda , Takao Miyajima , Hideki Watanabe
发明人： Hiroyuki Yokoyama , Shunsuke Kono , Tomoyuki Oki , Masao Ikeda , Takao Miyajima , Hideki Watanabe
IPC分类号： H01S3/13
CPC分类号： H01S5/06216 , H01S5/0428
摘要： An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.

6. 发明申请

US20120236886A1 LASER DIODE ELEMENT ASSEMBLY AND METHOD OF DRIVING THE SAME 有权
标题翻译：激光二极管元件组件及其驱动方法
公开(公告)号：US20120236886A1
公开(公告)日：2012-09-20
申请号：US13417998
申请日：2012-03-12
申请人： Tomoyuki Oki , Masaru Kuramoto , Rintaro Koda , Hideki Watanabe , Hiroyuki Yokoyama
发明人： Tomoyuki Oki , Masaru Kuramoto , Rintaro Koda , Hideki Watanabe , Hiroyuki Yokoyama
IPC分类号： H01S5/062 , H01S5/028
CPC分类号： H01S5/0602 , B82Y20/00 , H01S5/0425 , H01S5/0625 , H01S5/1064 , H01S5/3063 , H01S5/34333 , H01S2301/166
摘要： A laser diode element assembly includes: a laser diode element; and a light reflector, in which the laser diode element includes (a) a laminate structure body configured by laminating, in order, a first compound semiconductor layer of a first conductivity type made of a GaN-based compound semiconductor, a third compound semiconductor layer made of a GaN-based compound semiconductor and including a light emission region, and a second compound semiconductor layer of a second conductivity type made of a GaN-based compound semiconductor, the second conductivity type being different from the first conductivity type, (b) a second electrode formed on the second compound semiconductor layer, and (c) a first electrode electrically connected to the first compound semiconductor layer, the laminate structure body includes a ridge stripe structure, and a minimum width Wmin and a maximum width Wmax of the ridge stripe structure satisfy 1
摘要翻译：激光二极管元件组件包括：激光二极管元件; 和光反射器，其中激光二极管元件包括（a）层叠结构体，其按顺序层叠由GaN基化合物半导体制成的第一导电类型的第一化合物半导体层，第三化合物半导体层由GaN系化合物半导体构成的发光区域和由GaN系化合物半导体构成的第二导电型的第二化合物半导体层，第二导电型与第一导电型不同，（b）形成在所述第二化合物半导体层上的第二电极，和（c）与所述第一化合物半导体层电连接的第一电极，所述层叠结构体包括脊条结构，并且所述脊的最小宽度Wmin和最大宽度Wmax 条纹结构满足1

7. 发明申请

US20120002690A1 METHOD OF DRIVING A LASER DIODE 失效
公开(公告)号：US20120002690A1
公开(公告)日：2012-01-05
申请号：US13212244
申请日：2011-08-18
申请人： Hiroyuki Yokoyama , Shunsuke Kono , Tomoyuki Oki , Masao Ikeda , Takao Miyajima , Hideki Watanabe
发明人： Hiroyuki Yokoyama , Shunsuke Kono , Tomoyuki Oki , Masao Ikeda , Takao Miyajima , Hideki Watanabe
IPC分类号： H01S3/13
CPC分类号： H01S5/06216 , H01S5/0428
摘要： An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.

8. 发明申请

US20120002271A1 SEMICONDUCTOR OPTICAL AMPLIFIER 有权
标题翻译：半导体光放大器
公开(公告)号：US20120002271A1
公开(公告)日：2012-01-05
申请号：US13166900
申请日：2011-06-23
申请人： Masaru Kuramoto , Masao Ikeda , Rintaro Koda , Tomoyuki Oki , Hideki Watanabe , Takao Miyajima , Hiroyuki Yokoyama
发明人： Masaru Kuramoto , Masao Ikeda , Rintaro Koda , Tomoyuki Oki , Hideki Watanabe , Takao Miyajima , Hiroyuki Yokoyama
IPC分类号： H01S3/00
CPC分类号： H01S5/1064 , H01S5/0425 , H01S5/0602 , H01S5/0657 , H01S5/16 , H01S5/22 , H01S5/32341 , H01S5/34333 , H01S5/50
摘要： A semiconductor optical amplifier includes: a laminated structure sequentially including a first compound semiconductor layer composed of GaN compound semiconductor and having a first conductivity type, a third compound semiconductor layer having a light amplification region composed of GaN compound semiconductor, and a second compound semiconductor layer composed of GaN compound semiconductor and having a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The laminated structure has a ridge stripe structure. When widths of the ridge stripe structure in a light output end face and the ridge stripe structure in a light incident end face are respectively Wout, and Win, Wout>Win is satisfied. A carrier non-injection region is provided in an internal region of the laminated structure from the light output end face along an axis line of the semiconductor optical amplifier.
摘要翻译：半导体光放大器包括：依次包括由GaN化合物半导体构成的第一化合物半导体并具有第一导电类型的层压结构，具有由GaN化合物半导体构成的光放大区域的第三化合物半导体层和第二化合物半导体层由GaN化合物半导体构成并具有第二导电类型; 形成在第二化合物半导体层上的第二电极; 和与第一化合物半导体层电连接的第一电极。层叠结构具有脊形条纹结构。当光输出端面中的棱条结构的宽度和光入射端面中的脊条纹结构的宽度分别为Wout时，满足Win，Wout> Win。载体非注入区域沿着半导体光放大器的轴线从光输出端面设置在层叠结构的内部区域中。

9. 发明授权

US08085827B2 Vertical cavity surface emitting laser and method of manufacturing the same 失效
标题翻译：垂直腔表面发射激光器及其制造方法
公开(公告)号：US08085827B2
公开(公告)日：2011-12-27
申请号：US12379824
申请日：2009-03-03
申请人： Tomoyuki Oki , Rintaro Koda , Naoki Jogan , Yuji Masui , Takahiro Arakida
发明人： Tomoyuki Oki , Rintaro Koda , Naoki Jogan , Yuji Masui , Takahiro Arakida
IPC分类号： H01S5/00
CPC分类号： H01S5/18311 , H01S5/0425 , H01S5/18358 , H01S5/2086
摘要： A Vertical Cavity Surface Emitting Laser capable of decreasing the lowering of the yield due to displacement and separation of a pedestal without enormous increase of the threshold value and more difficult manufacturing process is provided. A base of a mesa spreads over the top face of a lower DBR layer. The base is a non-flat face in which end faces of a plurality of layers are exposed. The non-flat face is generated due to etching unevenness in forming the mesa, and is in a state of a step in which end faces of a low-refractive index layer and a high-refractive index layer included in the lower DBR layer are alternatively exposed. At least one of the layers exposed in the non-flat face in the plurality of low-refractive index layers included in the lower DBR layer is an oxidation inhibition layer.
摘要翻译：提供了一种垂直腔表面发射激光器，其能够降低由于基座的位移和分离而导致的屈服的降低，而没有极大的阈值增加和更困难的制造过程。台面的底部扩展到较低DBR层的顶面。基部是露出多层的端面的非平坦面。由于在形成台面时的蚀刻不均匀性而产生非平坦面，并且处于下层DBR层中包括的低折射率层和高折射率层的端面的步骤的状态裸露。包含在下DBR层中的多个低折射率层中的非平坦面露出的层中的至少一层是氧化抑制层。

10. 发明授权

US08027370B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08027370B2
公开(公告)日：2011-09-27
申请号：US12656165
申请日：2010-01-20
申请人： Yuji Masui , Takahiro Arakida , Kayoko Kikuchi , Terukazu Naruse , Tomoyuki Oki , Naoki Jogan
发明人： Yuji Masui , Takahiro Arakida , Kayoko Kikuchi , Terukazu Naruse , Tomoyuki Oki , Naoki Jogan
IPC分类号： H01S5/00 , H01S3/13
CPC分类号： H01S5/02276 , B82Y20/00 , H01S5/0425 , H01S5/06226 , H01S5/18311 , H01S5/1835 , H01S5/34313 , H01S2301/176
摘要： The present invention provides a semiconductor device realizing improved adhesion between a low-dielectric-constant material and a semiconductor material. The semiconductor device includes, on a semiconductor layer, an adhesion layer and a low-dielectric-constant material layer in order from the semiconductor layer side. The adhesion layer has a projection/recess structure, and the low-dielectric-constant material layer is formed so as to bury gaps in the projection/recess structure.
摘要翻译：本发明提供一种半导体器件，其实现了低介电常数材料与半导体材料之间的粘合性的改善。半导体器件在半导体层上包括从半导体层侧开始的粘合层和低介电常数材料层。粘合层具有突出/凹陷结构，并且形成低介电常数材料层以便在突出/凹陷结构中埋入间隙。

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