专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07372080B2 Gan semiconductor device 有权
标题翻译：甘半导体器件
公开(公告)号：US07372080B2
公开(公告)日：2008-05-13
申请号：US10517877
申请日：2003-06-19
申请人： Osamu Goto , Osamu Matsumoto , Tomomi Sasaki , Masao Ikeda
发明人： Osamu Goto , Osamu Matsumoto , Tomomi Sasaki , Masao Ikeda
IPC分类号： H01L29/22 , H01L33/00
CPC分类号： H01S5/0207 , H01S5/0014 , H01S5/0422 , H01S5/2201 , H01S5/32341
摘要： Provided is a GaN-based semiconductor light emitting device formed on a GaN single-crystal substrate and having a configuration capable of reducing a current leak.A GaN-based semiconductor laser device (50) is disclosed as an example of the GaN-based semiconductor light emitting device, and it is a semiconductor laser device having a structure such that a p-side electrode and an n-side electrode are provided on a multilayer structure of GaN-based compound semiconductor layers. The GaN-based semiconductor laser device (50) is similar in configuration to a conventional GaN-based semiconductor laser device formed on a sapphire substrate except that a GaN single-crystal substrate (52) is used in place of the sapphire substrate and that the multilayer structure is directly formed on the GaN single-crystal substrate (52) without providing a GaN-ELO structure layer. The GaN single-crystal substrate (52) has continuous belt-shaped core portions (52a) each having a width of 10 μm. These core portions (52a) are spaced apart from each other by a distance of about 400 μm. A laser stripe (30), a pad metal (37) for the p-side electrode (36), and the n-side electrode (38) are provided on the multilayer structure in a region except the core portions (52a) of the GaN single-crystal substrate (52). The horizontal distance Sp between the pad metal (37) and the core portion (52a) adjacent thereto is 95 μm, and the horizontal distance Sn between the n-side electrode (38) and the core portion (52a) adjacent thereto is also 95 μm.
摘要翻译：提供了一种形成在GaN单晶衬底上并具有能够减少电流泄漏的构造的GaN基半导体发光器件。作为GaN系半导体发光元件的一例，公开了GaN系半导体激光元件（50），是具有p侧电极和n侧电极的结构的半导体激光元件在GaN基化合物半导体层的多层结构上。 GaN基半导体激光器件（50）的结构与形成在蓝宝石衬底上的常规GaN基半导体激光器器件相似，除了使用GaN单晶衬底（52）代替蓝宝石衬底，并且多层结构直接形成在GaN单晶衬底（52）上，而不提供GaN-ELO结构层。 GaN单晶衬底（52）具有宽度为10μm的连续的带状芯部（52a）。这些芯部分（52a）彼此隔开约400μm的距离。激光条纹（30），用于p侧电极（36）的焊盘金属（37）和n侧电极（38）设置在除了芯部（52a）的芯部 GaN单晶衬底（52）。焊垫金属（37）与与其相邻的芯部（52a）之间的水平距离Sp为95μm，n侧电极（38）与与其相邻的芯部（52a）之间的水平距离Sn为也是95妈妈。

2. 发明申请

US20060097278A1 Gan semiconductor device 有权
标题翻译：甘半导体器件
公开(公告)号：US20060097278A1
公开(公告)日：2006-05-11
申请号：US10517877
申请日：2003-06-19
申请人： Osamu Goto , Osamu Matsumoto , Tomomi Sasaki , Masao Ikeda
发明人： Osamu Goto , Osamu Matsumoto , Tomomi Sasaki , Masao Ikeda
IPC分类号： H01L33/00
CPC分类号： H01S5/0207 , H01S5/0014 , H01S5/0422 , H01S5/2201 , H01S5/32341
摘要： Provided is a GaN-based semiconductor light emitting device formed on a GaN single-crystal substrate and having a configuration capable of reducing a current leak. A GaN-based semiconductor laser device (50) is disclosed as an example of the GaN-based semiconductor light emitting device, and it is a semiconductor laser device having a structure such that a p-side electrode and an n-side electrode are provided on a multilayer structure of GaN-based compound semiconductor layers. The GaN-based semiconductor laser device (50) is similar in configuration to a conventional GaN-based semiconductor laser device formed on a sapphire substrate except that a GaN single-crystal substrate (52) is used in place of the sapphire substrate and that the multilayer structure is directly formed on the GaN single-crystal substrate (52) without providing a GaN-ELO structure layer. The GaN single-crystal substrate (52) has continuous belt-shaped core portions (52a) each having a width of 10 μm. These core portions (52a) are spaced apart from each other by a distance of about 400 μm. A laser stripe (30), a pad metal (37) for the p-side electrode (36), and the n-side electrode (38) are provided on the multilayer structure in a region except the core portions (52a) of the GaN single-crystal substrate (52). The horizontal distance Sp between the pad metal (37) and the core portion (52a) adjacent thereto is 95 μm, and the horizontal distance Sn between the n-side electrode (38) and the core portion (52a) adjacent thereto is also 95 μm.
摘要翻译：提供了一种形成在GaN单晶衬底上并具有能够减少电流泄漏的构造的GaN基半导体发光器件。作为GaN系半导体发光元件的一例，公开了GaN系半导体激光元件（50），是具有p侧电极和n侧电极的结构的半导体激光元件在GaN基化合物半导体层的多层结构上。 GaN基半导体激光器件（50）的结构与形成在蓝宝石衬底上的常规GaN基半导体激光器器件相似，除了使用GaN单晶衬底（52）代替蓝宝石衬底，并且多层结构直接形成在GaN单晶衬底（52）上，而不提供GaN-ELO结构层。 GaN单晶衬底（52）具有宽度为10μm的连续的带状芯部（52a）。这些芯部分（52a）彼此隔开约400μm的距离。激光条纹（30），用于p侧电极（36）的焊盘金属（37）和n侧电极（38）设置在除了芯部（52a）的芯部 GaN单晶衬底（52）。焊垫金属（37）与与其相邻的芯部（52a）之间的水平距离Sp为95μm，n侧电极（38）与与其相邻的芯部（52a）之间的水平距离Sn为也是95妈妈。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式