专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09345156B2 Power supply device 有权
标题翻译：电源设备
公开(公告)号：US09345156B2
公开(公告)日：2016-05-17
申请号：US14130517
申请日：2012-08-17
申请人： Masayuki Ogura , Shinji Watanabe , Haruhisa Fujisawa , Kazuhiko Funabashi , Takuhiro Murakami , Yasushi Nakano , Hideki Watanabe , Norihide Tao , Takafumi Itoh
发明人： Masayuki Ogura , Shinji Watanabe , Haruhisa Fujisawa , Kazuhiko Funabashi , Takuhiro Murakami , Yasushi Nakano , Hideki Watanabe , Norihide Tao , Takafumi Itoh
IPC分类号： H02J7/00 , H05K5/02 , H02M7/00 , H05K5/00
CPC分类号： H05K5/023 , H02J7/0042 , H02J7/0044 , H02J7/0063 , H02J7/0065 , H02M7/003 , H05K5/0086
摘要： A power supply device includes a main body, a cover member, a rechargeable battery, and an inverter device. The main body is configured of box-shape formed with an opening. The cover member is configured to open and close the opening. The rechargeable battery is accommodated in the main body. The inverter device is configured to be accommodated in the main body. The inverter device converts a direct voltage from the battery to an alternating voltage and outputs the alternating voltage.
摘要翻译：电源装置包括主体，盖构件，可充电电池和逆变器装置。主体由形成有开口的盒形构成。盖构件被构造成打开和关闭开口。可充电电池容纳在主体中。逆变器装置被配置为容纳在主体中。逆变器装置将来自电池的直流电压转换为交流电压并输出交流电压。

2. 发明授权

US09025631B2 Light-emitting device and method of manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US09025631B2
公开(公告)日：2015-05-05
申请号：US14345289
申请日：2012-09-04
申请人： Masaru Kuramoto , Rintaro Koda , Hideki Watanabe
发明人： Masaru Kuramoto , Rintaro Koda , Hideki Watanabe
IPC分类号： H01S5/00 , H01S5/22 , H01S5/50 , H01S5/343 , H01S5/20 , H01S5/32
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/141 , H01S5/2009 , H01S5/2031 , H01S5/209 , H01S5/305 , H01S5/3063 , H01S5/309 , H01S5/3211 , H01S5/3213 , H01S5/34333 , H01S5/50 , H01S2301/166 , H01S2301/176
摘要： Provided is a high-output light-emitting device capable of emitting a light beam in a single mode. The light-emitting device includes a laminate structure body configured by laminating, in order, a first compound semiconductor layer, an active layer, and a second compound semiconductor layer on a base substrate, a second electrode, and a first electrode. The first compound semiconductor layer has a laminate structure including a first cladding layer and a first light guide layer in order from the base substrate, and the laminate structure body has a ridge stripe structure configured of the second compound semiconductor layer, the active layer, and a portion in a thickness direction of the first light guide layer. Provided that a thickness of the first light guide layer is t1, and a thickness of the portion configuring the ridge stripe structure of the first light guide layer is t1′, 6×10−7 m
摘要翻译：提供能够以单一模式发射光束的高输出发光装置。发光装置包括层叠结构体，其通过在基底基板，第二电极和第一电极上依次层叠第一化合物半导体层，有源层和第二化合物半导体层而构成。第一化合物半导体层具有从基底依次依次包括第一包层和第一导光层的叠层结构，层叠结构体具有由第二化合物半导体层，有源层和第一导光层的厚度方向的一部分。假设第一导光层的厚度为t1，构成第一导光层的脊条结构的部分的厚度为t1'，6×10-7m

3. 发明授权

US08780175B2 Picture signal processor, picture display and picture display system 有权
标题翻译：图像信号处理器，图像显示和图像显示系统
公开(公告)号：US08780175B2
公开(公告)日：2014-07-15
申请号：US13081969
申请日：2011-04-07
申请人： Shinichiro Miyazaki , Kyoichiro Oda , Minoru Urushihara , Makoto Kondo , Yoichi Matsumura , Hideki Watanabe
发明人： Shinichiro Miyazaki , Kyoichiro Oda , Minoru Urushihara , Makoto Kondo , Yoichi Matsumura , Hideki Watanabe
IPC分类号： H04N13/00 , H04N7/01 , H04N13/04
CPC分类号： H04N7/014 , G02B27/2264 , H04N7/0132 , H04N13/341 , H04N13/398
摘要： A picture signal processor includes: a frame-rate conversion section performing a frame-rate-increasing conversion, which brings an over-double frame rate, on each of a plurality of time-series picture streams each including a plurality of unit pictures, and providing frame-rate-converted picture streams to a display section which displays pictures through performing time-divisional switching of picture streams from one to another in order; and a shutter control section controlling a shutter eyeglass device to perform an open/close operation in synchronization with a display switching timing between the frame-rate-converted picture streams in the display section.
摘要翻译：图像信号处理器包括：帧速率转换部分，对于包括多个单位图像的多个时间序列图像流中的每一个，执行提高双倍帧速率的帧速率增加转换;以及将帧速率转换的图像流提供给显示部分，显示部分通过按顺序执行图像流的分时切换来显示图像; 以及快门控制部分，其控制快门眼镜装置与显示部分中的帧速率转换后的图像流之间的显示切换定时同步地执行打开/关闭操作。

4. 发明授权

US08588264B2 Method of driving a laser diode 有权
标题翻译：驱动激光二极管的方法
公开(公告)号：US08588264B2
公开(公告)日：2013-11-19
申请号：US13212249
申请日：2011-08-18
申请人： Hiroyuki Yokoyama , Shunsuke Kono , Tomoyuki Oki , Masao Ikeda , Takao Miyajima , Hideki Watanabe
发明人： Hiroyuki Yokoyama , Shunsuke Kono , Tomoyuki Oki , Masao Ikeda , Takao Miyajima , Hideki Watanabe
IPC分类号： H01S3/13
CPC分类号： H01S5/06216 , H01S5/0428
摘要： An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.
摘要翻译：提供具有简单结构和配置的超短脉冲/超大功率激光二极管。在驱动激光二极管的方法中，激光二极管由比阈值电流值高10倍或更多倍的脉冲电流来驱动。脉冲电流的宽度优选为10纳秒以下，脉冲电流的值为0.4安培以上。

5. 发明授权

US08575626B2 Bi-section semiconductor laser device, method for manufacturing the same, and method for driving the same 有权
标题翻译：双段半导体激光装置及其制造方法及其驱动方法
公开(公告)号：US08575626B2
公开(公告)日：2013-11-05
申请号：US13553380
申请日：2012-07-19
申请人： Hideki Watanabe , Takao Miyajima , Masao Ikeda , Hiroyuki Yokoyama , Tomoyuki Oki , Masaru Kuramoto
发明人： Hideki Watanabe , Takao Miyajima , Masao Ikeda , Hiroyuki Yokoyama , Tomoyuki Oki , Masaru Kuramoto
IPC分类号： H01L27/15 , H01L21/00
CPC分类号： H01S5/0625 , B82Y20/00 , H01S5/0425 , H01S5/0602 , H01S5/0658 , H01S5/14 , H01S5/22 , H01S5/3216 , H01S5/34333
摘要： A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region, and a second compound semiconductor layer of a second conductivity type; (B) forming a belt-shaped second electrode on the second compound semiconductor layer; (C) forming a ridge structure by etching at least part of the second compound semiconductor layer using the second electrode as an etching mask; and (D) forming a resist layer for forming a separating groove in the second electrode and then forming the separating groove in the second electrode by wet etching so that the separating groove separates the second electrode into a first portion and a second portion.
摘要翻译：一种制造双相半导体激光器件的方法包括以下步骤：（A）形成叠层结构，其通过在基板上依次层叠第一导电类型的第一化合物半导体层，构成第一导电类型的化合物半导体层发光区域和可饱和吸收区域;以及第二导电类型的第二化合物半导体层; （B）在第二化合物半导体层上形成带状的第二电极; （C）通过使用所述第二电极作为蚀刻掩模蚀刻所述第二化合物半导体层的至少一部分来形成脊结构; 和（D）在第二电极中形成用于形成分隔槽的抗蚀剂层，然后通过湿蚀刻在第二电极中形成分隔槽，使得分离槽将第二电极分离成第一部分和第二部分。

6. 发明授权

US08483256B2 Laser diode element assembly and method of driving the same 有权
标题翻译：激光二极管元件组装及其驱动方法
公开(公告)号：US08483256B2
公开(公告)日：2013-07-09
申请号：US13417998
申请日：2012-03-12
申请人： Tomoyuki Oki , Masaru Kuramoto , Rintaro Koda , Hideki Watanabe , Hiroyuki Yokoyama
发明人： Tomoyuki Oki , Masaru Kuramoto , Rintaro Koda , Hideki Watanabe , Hiroyuki Yokoyama
IPC分类号： H01S3/08
CPC分类号： H01S5/0602 , B82Y20/00 , H01S5/0425 , H01S5/0625 , H01S5/1064 , H01S5/3063 , H01S5/34333 , H01S2301/166
摘要： A laser diode element assembly includes: a laser diode element; and a light reflector, in which the laser diode element includes (a) a laminate structure body configured by laminating, in order, a first compound semiconductor layer of a first conductivity type made of a GaN-based compound semiconductor, a third compound semiconductor layer made of a GaN-based compound semiconductor and including a light emission region, and a second compound semiconductor layer of a second conductivity type made of a GaN-based compound semiconductor, the second conductivity type being different from the first conductivity type, (b) a second electrode formed on the second compound semiconductor layer, and (c) a first electrode electrically connected to the first compound semiconductor layer, the laminate structure body includes a ridge stripe structure, and a minimum width Wmin and a maximum width Wmax of the ridge stripe structure satisfy 1
摘要翻译：激光二极管元件组件包括：激光二极管元件; 和光反射器，其中激光二极管元件包括（a）层叠结构体，其按顺序层叠由GaN基化合物半导体制成的第一导电类型的第一化合物半导体层，第三化合物半导体层由GaN系化合物半导体构成的发光区域和由GaN系化合物半导体构成的第二导电型的第二化合物半导体层，第二导电型与第一导电型不同，（b）形成在所述第二化合物半导体层上的第二电极，和（c）与所述第一化合物半导体层电连接的第一电极，所述层叠结构体包括脊条结构，并且所述脊的最小宽度Wmin和最大宽度Wmax 条纹结构满足1

7. 发明申请

US20130058513A1 TELEVISION AND ELECTRONIC DEVICE 有权
标题翻译：电视和电子设备
公开(公告)号：US20130058513A1
公开(公告)日：2013-03-07
申请号：US13489648
申请日：2012-06-06
申请人： Tomofumi Miyamoto , Hideki Watanabe
发明人： Tomofumi Miyamoto , Hideki Watanabe
IPC分类号： H04R1/02
CPC分类号： H04R1/02 , H04R1/025
摘要： According to at least one embodiment, a television includes a housing further including a pair of corner portions and an enclosed space on an inner side thereof, a pair of speaker boxes housed in the enclosed space in vicinities of the corner portions, a pair of speakers housed in the speaker boxes respectively in a direction which crosses a thickness direction of the housing, and each of the speaker boxes further includes a first duct to guide sounds from a first side of the respective speaker to the respective first opening portion and a second duct to guide sounds from a second side of the respective speaker towards the enclosed space.
摘要翻译：根据至少一个实施例，电视机包括还包括一对角部和在其内侧上的封闭空间的壳体，一对容纳在角部附近的封闭空间中的扬声器箱，一对扬声器分别沿着与壳体的厚度方向交叉的方向容纳在扬声器箱中，并且每个扬声器盒还包括第一导管，用于将声音从相应扬声器的第一侧引导到相应的第一开口部分，第二导管以将声音从相应扬声器的第二侧引向封闭空间。

8. 发明授权

US08116343B2 Method of driving a laser diode 失效
标题翻译：驱动激光二极管的方法
公开(公告)号：US08116343B2
公开(公告)日：2012-02-14
申请号：US13047317
申请日：2011-03-14
申请人： Hiroyuki Yokoyama , Shunsuke Kono , Tomoyuki Oki , Masao Ikeda , Takao Miyajima , Hideki Watanabe
发明人： Hiroyuki Yokoyama , Shunsuke Kono , Tomoyuki Oki , Masao Ikeda , Takao Miyajima , Hideki Watanabe
IPC分类号： H01S5/00
CPC分类号： H01S5/06216 , H01S5/0428
摘要： An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration. The laser diode can be driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.
摘要翻译：超短脉冲/超大功率激光二极管，结构简单，结构简单。激光二极管可以由比阈值电流值高10倍或更多倍的脉冲电流来驱动。脉冲电流的宽度优选为10纳秒以下，脉冲电流的值为0.4安培以上。

9. 发明申请

US20110234744A1 LIGHT OSCILLATION DEVICE AND RECORDING DEVICE 有权
标题翻译：光振荡装置和记录装置
公开(公告)号：US20110234744A1
公开(公告)日：2011-09-29
申请号：US13052547
申请日：2011-03-21
申请人： Goro Fujita , Takao Miyajima , Hideki Watanabe
发明人： Goro Fujita , Takao Miyajima , Hideki Watanabe
IPC分类号： B41J2/435 , H01S5/00
CPC分类号： G11B7/1263 , B82Y20/00 , H01S5/0014 , H01S5/0601 , H01S5/06255 , H01S5/0658 , H01S5/22 , H01S5/34333
摘要： A light oscillation device has a self oscillation semiconductor laser that has a double quantum well separated confinement heterostructure made of GaInN/GaN/AlGaN materials and that includes a saturable absorber section which is applied with a negative bias voltage and a gain section into which a gain current is injected, a light separation unit that separates a portion of laser light beams from the self oscillation semiconductor laser, a light sensing element that senses the laser light beams separated by the light separation unit, and a current control circuit which controls a current injected into the gain section of the self oscillation semiconductor laser based on an amount of the laser light beams which are sensed by the light sensing element.
摘要翻译：光振荡装置具有自激振荡半导体激光器，其具有由GaInN / GaN / AlGaN材料制成的双量子阱分离的限制异质结构，并且包括施加负偏置电压的可饱和吸收体部分和增益部分电流被注入，分离来自自身振荡半导体激光器的激光束的一部分的光分离单元，感测由光分离单元分离的激光束的感光元件，以及控制注入电流的电流控制电路基于由感光元件感测的激光束的量，进入自身振荡半导体激光器的增益部。

10. 发明申请

US20110216797A1 SELF-OSCILLATING SEMICONDUCTOR LASER DEVICE AND DRIVING METHOD THEREOF 有权
标题翻译：自激振荡半导体激光器件及其驱动方法
公开(公告)号：US20110216797A1
公开(公告)日：2011-09-08
申请号：US13035585
申请日：2011-02-25
申请人： Hideki Watanabe , Masaru Kuramoto , Takao Miyajima , Hiroyuki Yokoyama
发明人： Hideki Watanabe , Masaru Kuramoto , Takao Miyajima , Hiroyuki Yokoyama
IPC分类号： H01S5/343 , H01S5/30
CPC分类号： H01S5/3407 , H01S5/0601 , H01S5/30 , H01S5/343
摘要： There is provided a driving method of a self-oscillating semiconductor laser device including a first compound semiconductor layer having a first conductive type and composed of a GaN base compound semiconductor, a third compound semiconductor layer and a second compound semiconductor layer configuring an emission region and a saturable absorption region, are successively laminated, a second electrode formed on the second compound semiconductor layer, and a first electrode electrically connected to the first compound semiconductor layer. The second electrode is separated into a first portion to create a forward bias state by passing current to the first electrode via the emission region and a second portion to apply an electric field to the saturable absorption region by a separation groove. The current greater than a current value where kink is occurred in optical output-current characteristics is to be passed to the first portion of the second electrode.
摘要翻译：提供了一种自激振荡半导体激光器件的驱动方法，该器件包括具有第一导电类型并由GaN基化合物半导体构成的第一化合物半导体层，构成发光区域的第三化合物半导体层和第二化合物半导体层，依次层叠可饱和吸收区域，形成在第二化合物半导体层上的第二电极和与第一化合物半导体层电连接的第一电极。第二电极被分离为第一部分，以通过经由发射区域将电流传递到第一电极以产生正向偏置状态，以及第二部分，以通过分离槽将电场施加到可饱和吸收区域。大于在光输出电流特性中发生扭结的当前值的电流将被传递到第二电极的第一部分。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式