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1. 发明授权

US08008165B2 Nitride semiconductor wafer and method of processing nitride semiconductor wafer 失效
标题翻译：氮化物半导体晶片和氮化物半导体晶片的加工方法
公开(公告)号：US08008165B2
公开(公告)日：2011-08-30
申请号：US12836001
申请日：2010-07-14
申请人： Masahiro Nakayama , Naoki Matsumoto , Koshi Tamamura , Masao Ikeda
发明人： Masahiro Nakayama , Naoki Matsumoto , Koshi Tamamura , Masao Ikeda
IPC分类号： H01L21/30
CPC分类号： H01L21/02008 , B24B37/08 , H01L21/02024 , Y10S438/959
摘要： Nitride semiconductor wafers which are produced by epitaxially grown nitride films on a foreign undersubstrate in vapor phase have strong inner stress due to misfit between the nitride and the undersubstrate material. A GaN wafer which has made by piling GaN films upon a GaAs undersubstrate in vapor phase and eliminating the GaAs undersubstrate bends upward due to the inner stress owing to the misfit of lattice constants between GaN and GaAs.
摘要翻译：由氮化物和下衬底材料之间的失配导致的，由外延生长的氮化物膜在气相中的外来下衬衬底产生的氮化物半导体晶片具有很强的内部应力。通过在气相中在GaAs下衬底上堆叠GaN膜而消除GaAs下衬层而制成的GaN晶片由于内部应力而由于GaN和GaAs之间的晶格常数的失配而向上弯曲。

2. 发明授权

US07749325B2 Method of producing gallium nitride (GaN) independent substrate, method of producing GaN crystal body, and method of producing GaN substrate 有权
标题翻译：制造氮化镓（GaN）无关衬底的方法，生产GaN晶体的方法和制造GaN衬底的方法
公开(公告)号：US07749325B2
公开(公告)日：2010-07-06
申请号：US11655884
申请日：2007-01-22
申请人： Masahiro Nakayama
发明人： Masahiro Nakayama
IPC分类号： H01L21/304
CPC分类号： C30B25/18 , B24B5/50 , H01L21/02395 , H01L21/0254 , H01L21/02664 , Y10S117/915
摘要： A method of producing a separated GaN crystal body grown by vapor phase epitaxy on a substrate made of material different from GaN is provided. In this method, a nitride deposit is formed during the growth on a periphery of the substrate and GaN crystal body. The present method comprises the steps of: processing the periphery of the substrate to remove the nitride deposit; and, after the peripheral processing, separating the substrate from the GaN crystal body to make the substrate and the GaN crystal body independent of each other.
摘要翻译：提供了一种通过气相外延生长的分离的GaN晶体的方法，所述GaN晶体在由不同于GaN的材料制成的衬底上产生。在该方法中，在衬底和GaN晶体的周围生长期间形成氮化物沉积物。本方法包括以下步骤：处理衬底的周边以去除氮化物沉积物; 并且在外围处理之后，将衬底与GaN晶体体分离以使衬底和GaN晶体彼此独立。

3. 发明授权

US07535082B2 Nitride semiconductor wafer and method of processing nitride semiconductor wafer 有权
标题翻译：氮化物半导体晶片和氮化物半导体晶片的加工方法
公开(公告)号：US07535082B2
公开(公告)日：2009-05-19
申请号：US11055599
申请日：2005-02-11
申请人： Masahiro Nakayama , Naoki Matsumoto , Koshi Tamamura , Masao Ikeda
发明人： Masahiro Nakayama , Naoki Matsumoto , Koshi Tamamura , Masao Ikeda
IPC分类号： H01L23/544
CPC分类号： H01L21/02008 , B24B37/08 , H01L21/02024 , Y10S438/959
摘要： Nitride semiconductor wafers which are produced by epitaxially grown nitride films on a foreign undersubstrate in vapor phase have strong inner stress due to misfit between the nitride and the undersubstrate material. A GaN wafer which has made by piling GaN films upon a GaAs undersubstrate in vapor phase and eliminating the GaAs undersubstrate bends upward due to the inner stress owing to the misfit of lattice constants between GaN and GaAs. Ordinary one-surface polishing having the steps of gluing a wafer with a surface on a flat disc, bringing another surface in contact with a lower turntable, pressing the disc, rotating the disc, revolving the turntable and whetting the lower surface, cannot remedy the inherent distortion. The Distortion worsens morphology of epitaxial wafers, lowers yield of via-mask exposure and invites cracks on surfaces. Nitride crystals are rigid but fragile. Chemical/mechanical polishing has been requested in vain. Current GaN wafers have roughened bottom surfaces, which induce contamination of particles and fluctuation of thickness.
摘要翻译：由氮化物和下衬底材料之间的失配导致的，由外延生长的氮化物膜在气相中的外来下衬衬底产生的氮化物半导体晶片具有很强的内部应力。通过在气相中在GaAs下衬底上堆叠GaN膜而消除GaAs下衬层而制成的GaN晶片由于内部应力而由于GaN和GaAs之间的晶格常数的失配而向上弯曲。通常的单面抛光具有将晶片与平面盘上的表面胶合的步骤，使另一表面与下转台接触，按压盘，旋转盘，旋转转台并磨削下表面，不能补救固有失真。失真会加剧外延晶片的形态，降低通孔掩模曝光的产量，并引起表面裂纹。氮化物晶体是刚性但脆弱的。化学/机械抛光已被要求徒劳。当前的GaN晶圆已经粗糙化了底面，这引起了颗粒的污染和厚度的波动。

4. 发明申请

US20090057847A1 Gallium nitride wafer 审中-公开
标题翻译：氮化镓晶片
公开(公告)号：US20090057847A1
公开(公告)日：2009-03-05
申请号：US11597323
申请日：2006-03-16
申请人： Masahiro Nakayama
发明人： Masahiro Nakayama
IPC分类号： H01L29/04 , H01L23/544
CPC分类号： C30B29/406 , C30B33/00 , H01L23/544 , H01L2223/54453 , H01L2223/54493 , H01L2924/0002 , H01L2924/00
摘要： A gallium nitride wafer 11 has a substantially circular shape. The gallium nitride wafer 11 includes a plurality of stripe regions 13, a plurality of single crystal regions 15, and a visible mark 17. Each stripe region 13 represents the direction of axis and extends in a direction of a predetermined axis. Each stripe region 13 is interposed between single crystal regions 15. The mark 17 is provided in at least one of front side 11a and back side 11b of the gallium nitride wafer 11, and has a visible size and shape. A dislocation density of the stripe regions 13 is larger than that of the single-crystal regions 15, and the crystal orientation of the stripe regions 13 is different from that of the single crystal regions 15.
摘要翻译：氮化镓晶片11具有大致圆形的形状。氮化镓晶片11包括多个条纹区域13，多个单晶区域15和可见标记17.每个条纹区域13表示<11-20>轴方向，并沿预定轴线的方向延伸。每个条带区域13插入在单晶区域15之间。标记17设置在氮化镓晶片11的前侧11a和后侧11b中的至少一个中，具有可见的尺寸和形状。条状区域13的位错密度大于单晶区域15的位错密度，并且条纹区域13的晶体取向与单晶区域15的晶体取向不同。

5. 发明授权

US06340275B1 Chamfering method 失效
标题翻译：倒角法
公开(公告)号：US06340275B1
公开(公告)日：2002-01-22
申请号：US09468424
申请日：1999-12-21
申请人： Katsuhiro Amaike , Yukiharu Tomita , Masahiro Nakayama
发明人： Katsuhiro Amaike , Yukiharu Tomita , Masahiro Nakayama
IPC分类号： B23B3500
CPC分类号： B23B35/00 , B23B51/105 , B23B2215/20 , Y10T408/03 , Y10T408/08
摘要： A pin and an oil hole are modeled in an X, Y, and Z space (a three-dimensional coordinate system). Then, the model is cut with a plane which passes through a central axis of the hole and which includes a line normal to a tangent of the pin at a point at which the central axis of the oil hole and the surface of the pin (cylindrical surface) intersect. By this operation, shapes of the pin and the oil hole are recognized in two dimensions. Following this, a point of a chamfering drill is made to overlap the pin and the oil hole on a plane. Since a shape of the chamfering drill is already known, dimensions of a chamfered portion when viewed on said plane can be determined geometrically. Then, chamfering is performed with the chamfering drill kept at such an angle of inclination that desired dimensions of chamfer can be obtained on said plane.
摘要翻译：在X，Y和Z空间（三维坐标系）中对引脚和油孔进行建模。然后，利用穿过孔的中心轴线的平面切割模型，该平面包括在油孔的中心轴线和销的表面（圆柱形的）的点处垂直于销的切线的直线表面）相交。通过这种操作，销和油孔的形状被识别为二维。此后，使倒角钻头的点与平面上的销和油孔重叠。由于倒角钻的形状是已知的，因此可以在几何上确定在所述平面上观察时的倒角部的尺寸。然后，使用倒角钻进行倒角，该倾斜钻保持在倾斜角度，从而可以在所述平面上获得所需的倒角尺寸。

6. 发明授权

US08022438B2 Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer 有权
标题翻译：倒角独立氮化物半导体晶片和倒角氮化物半导体晶片的方法
公开(公告)号：US08022438B2
公开(公告)日：2011-09-20
申请号：US12436514
申请日：2009-05-06
申请人： Masahiro Nakayama , Masato Irikura
发明人： Masahiro Nakayama , Masato Irikura
IPC分类号： H01L29/74 , H01L31/111
CPC分类号： H01L29/0657 , B24B9/065 , B24B21/002 , H01L21/02021
摘要： Technology of making freestanding gallium nitride (GaN) wafers has been matured at length. Gallium nitride is rigid but fragile. Chamfering of a periphery of a GaN wafer is difficult. At present edges are chamfered by a rotary whetstone of gross granules with weak pressure. Minimum roughness of the chamfered edges is still about Ra 10 μm to Ra 6 μm. The large edge roughness causes scratches, cracks, splits or breaks in transferring process or wafer process. A wafer of the present invention is bevelled by fixing the wafer to a chuck of a rotor, bringing an edge of the wafer into contact with an elastic whetting material having a soft matrix and granules implanted on the soft matrix, rotating the wafer and feeding the whetting material. Favorably, several times of chamfering edges by changing the whetting materials of smaller granules are given to the wafer. The chamfering can realize small roughness of Ra 10 nm and Ra 5 μm at edges of wafers.
摘要翻译：制造独立氮化镓（GaN）晶片的技术已经成熟。氮化镓是刚性但脆弱的。 GaN晶圆的周边的倒角是困难的。目前的边缘由具有弱压力的总颗粒的旋转砂轮倒角。倒角边缘的最小粗糙度仍然为Ra 10μm至Ra 6μm。大的边缘粗糙度导致转印过程或晶片工艺中的划痕，裂纹，分裂或断裂。本发明的晶片通过将晶片固定到转子的卡盘上而使晶片的边缘与具有软基质的弹性磨料材料接触并且将植入在软质基质上的颗粒接触，旋转晶片并将其送入磨料有利的是，通过改变较小颗粒的磨粒材料的几倍的倒棱边缘被给予晶片。倒角可以在晶片边缘实现Ra 10 nm的小粗糙度和Ra 5μm。

7. 发明申请

US20100095689A1 VEHICLE AIR CONDITIONER AND METHOD FOR CONTROLLING THE SAME 审中-公开
标题翻译：车辆空调器及其控制方法
公开(公告)号：US20100095689A1
公开(公告)日：2010-04-22
申请号：US12447739
申请日：2008-10-10
申请人： Katsunari Shiroyama , Shiro Matsubara , Hideaki Tatenoi , Masahiro Nakayama , Mituru Murakami , Hajime Utiyama , Yorisada Kondo
发明人： Katsunari Shiroyama , Shiro Matsubara , Hideaki Tatenoi , Masahiro Nakayama , Mituru Murakami , Hajime Utiyama , Yorisada Kondo
IPC分类号： B60H1/32
CPC分类号： B60H1/3208 , B60H1/00778 , B60H2001/3261 , Y02T10/88
摘要： A vehicle air conditioner that can increase the range of energy-saving operation by stopping an engine without impairing the air conditioning comfort and a method for controlling the vehicle air conditioner are provided. The vehicle air conditioner includes a compressor (3) that is driven by an engine (2) to compress a refrigerant, a heat radiator (4) that radiates heat from the compressed refrigerant, an expansion valve (5) that decompresses the refrigerant from which the heat is radiated, a heat absorber (6) that makes the decompressed refrigerant absorb heat, an input unit (8) to which selection information about an air-conditioning priority mode and an energy-saving priority mode is input, and a control unit (9) that selects one of a threshold related to the air-conditioning priority mode and a threshold related to the energy-saving priority mode on the basis of at least the selection information input to the input unit (8) and outputs one of an idle-stop permission request, an idle-stop prohibition request, and an idle-stop cancellation request to the engine (2) on the basis of the selected threshold.
摘要翻译：提供一种可以通过停止发动机而不损害空调舒适度来增加节能运行范围的车辆空调，以及用于控制车辆空调的方法。车辆空调包括由发动机（2）驱动以压缩制冷剂的压缩机（3），从压缩制冷剂辐射热量的散热器（4），对其中的制冷剂进行减压的膨胀阀（5）散热，使减压制冷剂吸热的吸热器（6），输入有关空气调节优先模式和节能优先模式的选择信息的输入单元（8），以及控制单元（9）至少基于输入到输入单元（8）的选择信息，选择与空调优先模式相关的阈值和与节能优先模式相关的阈值中的一个，并输出怠速停止许可请求，怠速停止禁止请求和怠速停止取消请求，基于所选择的阈值发送到引擎（2）。

8. 发明申请

US20090188114A1 Cutting device and cutting method 审中-公开
标题翻译：切割装置和切割方法
公开(公告)号：US20090188114A1
公开(公告)日：2009-07-30
申请号：US10585453
申请日：2005-01-06
申请人： Masami Adachi , Masahiro Nakayama
发明人： Masami Adachi , Masahiro Nakayama
IPC分类号： B26B7/00 , B26D3/00
CPC分类号： B26D3/003 , B26D3/02 , B26D7/10 , Y10T83/0605
摘要： A cutting device capable of heating a blade uniformly and to an appropriate temperature and capable of cutting a member with small cutting resistance at a low angle (acute angle) is provided. Electricity is passed through a metallic thin blade to cause the blade to self-heat, and this enables the blade to cut an unvulcanized rubber member with small resistance and with restricted deformation of the member. The thin blade is durable because of its strip shaped shape and can be uniformly heated because it self-heats by an electric current.
摘要翻译：提供能够均匀地加热叶片并且适当温度并能够以低角度（锐角）切割具有小切割阻力的部件的切割装置。电流通过金属薄片以使刀片自加热，这使得刀片能够以小的阻力和构件的变形受限制地切割未硫化的橡胶构件。薄片由于其带状形状而耐用，并且可以通过电流自发加热而被均匀地加热。

9. 发明授权

US07550780B2 Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer 有权
标题翻译：倒角独立氮化物半导体晶片和倒角氮化物半导体晶片的方法
公开(公告)号：US07550780B2
公开(公告)日：2009-06-23
申请号：US11414366
申请日：2006-05-01
申请人： Masahiro Nakayama , Masato Irikura
发明人： Masahiro Nakayama , Masato Irikura
IPC分类号： H01L29/74 , H01L31/111
CPC分类号： H01L29/0657 , B24B9/065 , B24B21/002 , H01L21/02021
摘要： Technology of making freestanding gallium nitride (GaN) wafers has been matured at length. Gallium nitride is rigid but fragile. Chamfering of a periphery of a GaN wafer is difficult. At present edges are chamfered by a rotary whetstone of gross granules with weak pressure. Minimum roughness of the chamfered edges is still about Ra 10 μm to Ra 6 μm. The large edge roughness causes scratches, cracks, splits or breaks in transferring process or wafer process. A wafer of the present invention is bevelled by fixing the wafer to a chuck of a rotor, bringing an edge of the wafer into contact with an elastic whetting material having a soft matrix and granules implanted on the soft matrix, rotating the wafer and feeding the whetting material. Favorably, several times of chamfering edges by changing the whetting materials of smaller granules are given to the wafer. The chamfering can realize small roughness of Ra 10 nm and Ra 5 μm at edges of wafers.
摘要翻译：制造独立氮化镓（GaN）晶片的技术已经成熟。氮化镓是刚性但脆弱的。 GaN晶圆的周边的倒角是困难的。目前的边缘由具有弱压力的总颗粒的旋转砂轮倒角。倒角边缘的最小粗糙度仍然为Ra 10 mum至Ra 6 mum。大的边缘粗糙度导致转印过程或晶片工艺中的划痕，裂纹，分裂或断裂。本发明的晶片通过将晶片固定到转子的卡盘上而使晶片的边缘与具有软基质的弹性磨料材料接触并且将植入在软质基质上的颗粒接触，旋转晶片并将其送入磨料有利的是，通过改变较小颗粒的磨粒材料的几倍的倒棱边缘被给予晶片。倒角可以在晶片边缘实现Ra 10 nm和Ra 5 mum的小粗糙度。

10. 发明授权

US07518301B2 Electron tubes 失效
标题翻译：电子管
公开(公告)号：US07518301B2
公开(公告)日：2009-04-14
申请号：US11035545
申请日：2005-01-14
申请人： Yukihiko Shimizu , Masao Saito , Kinya Ueda , Masahiro Nakayama , Kazushige Noguchi
发明人： Yukihiko Shimizu , Masao Saito , Kinya Ueda , Masahiro Nakayama , Kazushige Noguchi
IPC分类号： H01J1/18
CPC分类号： H01J31/126 , H01J1/18 , H01J1/88
摘要： In an electron tube including vibration absorbers for linear members such as filaments, a vibration absorbing means that is made of a vibration absorber with a large vibration absorption effect, has a simple configuration, and is attachable easily to filaments is provided. The vibration absorbing means is formed of a holder 231, a vibration absorber 241, and a getter shielding member 251. These three members are attached to a shielding electrode S overlying the front substrate 111 to dispose the vibration absorber 241 between the holder 231 and getter shielding member 251. The vibration absorber 241 is mounted to slide or rotate between the holder 231 and the getter shielding member 251. The vibration absorber 241 has an aperture 2413 in which the filament is engaged. The bottom (apex) of the aperture 2413 is formed eccentrically. The vibration absorber 241 is in line contact with the shielding electrode S, as shown in FIG. 3(c).
摘要翻译：在包括诸如长丝的线性元件的减振器的电子管中，提供一种由具有大的振动吸收效果的减震器制成的振动吸收装置，具有简单的结构，并且易于连接到细丝上。振动吸收装置由保持器231，减震器241和吸气剂遮蔽构件251构成。这三个构件安装在覆盖在前基板111上的屏蔽电极S上，以将振动吸收器241设置在保持器231和吸气剂振动吸收器241被安装成在保持器231和吸气剂屏蔽构件251之间滑动或旋转。减振器241具有一个孔2413，细丝在其中接合。孔2413的底部（顶点）偏心地形成。如图1所示，振动吸收器241与屏蔽电极S线接触。图3（c）。

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