专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20060097278A1 Gan semiconductor device 有权
标题翻译：甘半导体器件
公开(公告)号：US20060097278A1
公开(公告)日：2006-05-11
申请号：US10517877
申请日：2003-06-19
申请人： Osamu Goto , Osamu Matsumoto , Tomomi Sasaki , Masao Ikeda
发明人： Osamu Goto , Osamu Matsumoto , Tomomi Sasaki , Masao Ikeda
IPC分类号： H01L33/00
CPC分类号： H01S5/0207 , H01S5/0014 , H01S5/0422 , H01S5/2201 , H01S5/32341
摘要： Provided is a GaN-based semiconductor light emitting device formed on a GaN single-crystal substrate and having a configuration capable of reducing a current leak. A GaN-based semiconductor laser device (50) is disclosed as an example of the GaN-based semiconductor light emitting device, and it is a semiconductor laser device having a structure such that a p-side electrode and an n-side electrode are provided on a multilayer structure of GaN-based compound semiconductor layers. The GaN-based semiconductor laser device (50) is similar in configuration to a conventional GaN-based semiconductor laser device formed on a sapphire substrate except that a GaN single-crystal substrate (52) is used in place of the sapphire substrate and that the multilayer structure is directly formed on the GaN single-crystal substrate (52) without providing a GaN-ELO structure layer. The GaN single-crystal substrate (52) has continuous belt-shaped core portions (52a) each having a width of 10 μm. These core portions (52a) are spaced apart from each other by a distance of about 400 μm. A laser stripe (30), a pad metal (37) for the p-side electrode (36), and the n-side electrode (38) are provided on the multilayer structure in a region except the core portions (52a) of the GaN single-crystal substrate (52). The horizontal distance Sp between the pad metal (37) and the core portion (52a) adjacent thereto is 95 μm, and the horizontal distance Sn between the n-side electrode (38) and the core portion (52a) adjacent thereto is also 95 μm.
摘要翻译：提供了一种形成在GaN单晶衬底上并具有能够减少电流泄漏的构造的GaN基半导体发光器件。作为GaN系半导体发光元件的一例，公开了GaN系半导体激光元件（50），是具有p侧电极和n侧电极的结构的半导体激光元件在GaN基化合物半导体层的多层结构上。 GaN基半导体激光器件（50）的结构与形成在蓝宝石衬底上的常规GaN基半导体激光器器件相似，除了使用GaN单晶衬底（52）代替蓝宝石衬底，并且多层结构直接形成在GaN单晶衬底（52）上，而不提供GaN-ELO结构层。 GaN单晶衬底（52）具有宽度为10μm的连续的带状芯部（52a）。这些芯部分（52a）彼此隔开约400μm的距离。激光条纹（30），用于p侧电极（36）的焊盘金属（37）和n侧电极（38）设置在除了芯部（52a）的芯部 GaN单晶衬底（52）。焊垫金属（37）与与其相邻的芯部（52a）之间的水平距离Sp为95μm，n侧电极（38）与与其相邻的芯部（52a）之间的水平距离Sn为也是95妈妈。

2. 发明授权

US07372080B2 Gan semiconductor device 有权
标题翻译：甘半导体器件
公开(公告)号：US07372080B2
公开(公告)日：2008-05-13
申请号：US10517877
申请日：2003-06-19
申请人： Osamu Goto , Osamu Matsumoto , Tomomi Sasaki , Masao Ikeda
发明人： Osamu Goto , Osamu Matsumoto , Tomomi Sasaki , Masao Ikeda
IPC分类号： H01L29/22 , H01L33/00
CPC分类号： H01S5/0207 , H01S5/0014 , H01S5/0422 , H01S5/2201 , H01S5/32341
摘要： Provided is a GaN-based semiconductor light emitting device formed on a GaN single-crystal substrate and having a configuration capable of reducing a current leak.A GaN-based semiconductor laser device (50) is disclosed as an example of the GaN-based semiconductor light emitting device, and it is a semiconductor laser device having a structure such that a p-side electrode and an n-side electrode are provided on a multilayer structure of GaN-based compound semiconductor layers. The GaN-based semiconductor laser device (50) is similar in configuration to a conventional GaN-based semiconductor laser device formed on a sapphire substrate except that a GaN single-crystal substrate (52) is used in place of the sapphire substrate and that the multilayer structure is directly formed on the GaN single-crystal substrate (52) without providing a GaN-ELO structure layer. The GaN single-crystal substrate (52) has continuous belt-shaped core portions (52a) each having a width of 10 μm. These core portions (52a) are spaced apart from each other by a distance of about 400 μm. A laser stripe (30), a pad metal (37) for the p-side electrode (36), and the n-side electrode (38) are provided on the multilayer structure in a region except the core portions (52a) of the GaN single-crystal substrate (52). The horizontal distance Sp between the pad metal (37) and the core portion (52a) adjacent thereto is 95 μm, and the horizontal distance Sn between the n-side electrode (38) and the core portion (52a) adjacent thereto is also 95 μm.
摘要翻译：提供了一种形成在GaN单晶衬底上并具有能够减少电流泄漏的构造的GaN基半导体发光器件。作为GaN系半导体发光元件的一例，公开了GaN系半导体激光元件（50），是具有p侧电极和n侧电极的结构的半导体激光元件在GaN基化合物半导体层的多层结构上。 GaN基半导体激光器件（50）的结构与形成在蓝宝石衬底上的常规GaN基半导体激光器器件相似，除了使用GaN单晶衬底（52）代替蓝宝石衬底，并且多层结构直接形成在GaN单晶衬底（52）上，而不提供GaN-ELO结构层。 GaN单晶衬底（52）具有宽度为10μm的连续的带状芯部（52a）。这些芯部分（52a）彼此隔开约400μm的距离。激光条纹（30），用于p侧电极（36）的焊盘金属（37）和n侧电极（38）设置在除了芯部（52a）的芯部 GaN单晶衬底（52）。焊垫金属（37）与与其相邻的芯部（52a）之间的水平距离Sp为95μm，n侧电极（38）与与其相邻的芯部（52a）之间的水平距离Sn为也是95妈妈。

3. 发明申请

US20060273326A1 Semiconductor Light Emitting Device, its Manufacturing Method, Semiconductor Device and Its Manufacturing Method 有权
标题翻译：半导体发光器件及其制造方法，半导体器件及其制造方法
公开(公告)号：US20060273326A1
公开(公告)日：2006-12-07
申请号：US11425595
申请日：2006-06-21
申请人： Osamu Goto , Takeharu Asano , Yasuhiko Suzuki , Motonobu Takeya , Katsuyoshi Shibuya , Takashi Mizuno , Tsuyoshi Tojo , Shiro Uchida , Masao Ikeda
发明人： Osamu Goto , Takeharu Asano , Yasuhiko Suzuki , Motonobu Takeya , Katsuyoshi Shibuya , Takashi Mizuno , Tsuyoshi Tojo , Shiro Uchida , Masao Ikeda
IPC分类号： H01L33/00
CPC分类号： H01L33/0075 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01S5/0425 , H01S5/2004 , H01S5/2013 , H01S5/3201 , H01S5/34333 , H01S2301/173 , H01S2304/12
摘要： A semiconductor light emitting device made of nitride III-V compound semiconductors includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.
摘要翻译：由氮化物III-V族化合物半导体制成的半导体发光器件包括由含有In和Ga的第一氮化物III-V化合物半导体构成的有源层，例如InGaN; 由包含In和Ga的不同于第一氮化物III-V化合物半导体的第二氮化物III-V化合物半导体制成的中间层，例如InGaN; 以及由含有Al和Ga的第三氮化物III-V化合物半导体（例如p型AlGaN）制成的覆盖层，其以顺序接触沉积。

4. 发明授权

US07439546B2 Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method 有权
公开(公告)号：US07439546B2
公开(公告)日：2008-10-21
申请号：US11425595
申请日：2006-06-21
申请人： Osamu Goto , Takeharu Asano , Yasuhiko Suzuki , Motonobu Takeya , Katsuyoshi Shibuya , Takashi Mizuno , Tsuyoshi Tojo , Shiro Uchida , Masao Ikeda
发明人： Osamu Goto , Takeharu Asano , Yasuhiko Suzuki , Motonobu Takeya , Katsuyoshi Shibuya , Takashi Mizuno , Tsuyoshi Tojo , Shiro Uchida , Masao Ikeda
IPC分类号： H01L27/15 , H01L33/00
CPC分类号： H01L33/0075 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01S5/0425 , H01S5/2004 , H01S5/2013 , H01S5/3201 , H01S5/34333 , H01S2301/173 , H01S2304/12
摘要： A semiconductor light emitting device made of nitride III-V compound semiconductors includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

5. 发明授权

US06836498B2 Semiconductor laser, semiconductor device and nitride series III-V group compound substrate, as well as manufacturing method thereof 失效
标题翻译：半导体激光器，半导体器件和氮化物系III-V族复合衬底及其制造方法
公开(公告)号：US06836498B2
公开(公告)日：2004-12-28
申请号：US09874828
申请日：2001-06-05
申请人： Motonobu Takeya , Katsunori Yanashima , Takeharu Asano , Osamu Goto , Shinro Ikeda , Katsuyoshi Shibuya , Tomonori Hino , Satoru Kijima , Masao Ikeda
发明人： Motonobu Takeya , Katsunori Yanashima , Takeharu Asano , Osamu Goto , Shinro Ikeda , Katsuyoshi Shibuya , Tomonori Hino , Satoru Kijima , Masao Ikeda
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01L21/0237 , H01L21/02378 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L33/0075 , H01S5/0207 , H01S5/0422 , H01S5/22 , H01S5/34333 , H01S2304/12
摘要： A semiconductor laser, a semiconductor device and a nitride series III-V group compound substrate capable of obtaining a crystal growth layer with less fluctuation of the crystallographic axes and capable of improving the device characteristics, as well as a manufacturing method therefor are provided. The semiconductor laser comprises, on one surface of a substrate used for growing, a plurality of spaced apart seed crystal layers and an n-side contact layer having a lateral growing region which is grown on the basis of the plurality of seed crystal layers. The seed crystal layer is formed in that a product of width w1 (unit: &mgr;m) at the boundary thereof relative to the n-side contact layer along the arranging direction A and a thickness t1 (unit: &mgr;m) along the direction of laminating the n-side contact layer is 15 or less. A semiconductor layer comprising a nitride series III-V group compound semiconductor is laminated on a substrate 11 comprising an n-type GaN. Protruded seed crystal portions are formed and a growth suppression layer having an opening corresponding to the seed crystal portion is disposed to the substrate. The semiconductor layer grows on the basis of the seed crystal portion and has a lateral growing region of low dislocation density.
摘要翻译：提供能够获得晶体轴的波动较小并且能够提高器件特性的晶体生长层的半导体激光器，半导体器件和氮化物系III-V族化合物基片及其制造方法。半导体激光器在用于生长的基板的一个表面上包括多个间隔开的晶种层和具有基于多个晶种层生长的侧向生长区域的n侧接触层。晶种层形成为沿着排列方向A相对于n侧接触层的边界处的宽度w1（单位：毫姆）的乘积和层叠方向的厚度t1（单位：毫姆） n侧接触层为15以下。在包含n型GaN的基板11上层叠包含氮化物系III-V族化合物半导体的半导体层。形成突出的晶种部分，并且将具有与晶种部分对应的开口的生长抑制层设置在基板上。半导体层基于晶种部分生长，具有低位错密度的侧向生长区域。

6. 发明授权

US08460958B2 Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method 有权
标题翻译：半导体发光器件及其制造方法，半导体器件及其制造方法
公开(公告)号：US08460958B2
公开(公告)日：2013-06-11
申请号：US13080802
申请日：2011-04-06
申请人： Osamu Goto , Takeharu Asano , Yasuhiko Suzuki , Motonobu Takeya , Katsuyoshi Shibuya , Takashi Mizuno , Tsuyoshi Tojo , Shiro Uchida , Masao Ikeda
发明人： Osamu Goto , Takeharu Asano , Yasuhiko Suzuki , Motonobu Takeya , Katsuyoshi Shibuya , Takashi Mizuno , Tsuyoshi Tojo , Shiro Uchida , Masao Ikeda
IPC分类号： H01L21/00
CPC分类号： H01L33/0075 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01S5/0425 , H01S5/2004 , H01S5/2013 , H01S5/3201 , H01S5/34333 , H01S2301/173 , H01S2304/12
摘要： A method of manufacturing a semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.
摘要翻译：由氮化物III-V族化合物半导体制造的半导体发光器件的制造方法包括由含有In和Ga的第一氮化物III-V化合物半导体，例如InGaN构成的有源层; 由包含In和Ga的不同于第一氮化物III-V化合物半导体的第二氮化物III-V化合物半导体制成的中间层，例如InGaN; 以及由含有Al和Ga的第三氮化物III-V化合物半导体（例如p型AlGaN）制成的覆盖层，其以顺序接触沉积。

7. 发明授权

US06950451B2 Multi-beam semiconductor laser element 失效
标题翻译：多光束半导体激光元件
公开(公告)号：US06950451B2
公开(公告)日：2005-09-27
申请号：US10480568
申请日：2002-06-14
申请人： Tsuyoshi Tojo , Tomonori Hino , Osamu Goto , Yoshifumi Yabuki , Shinichi Ansai , Shiro Uchida , Masao Ikeda
发明人： Tsuyoshi Tojo , Tomonori Hino , Osamu Goto , Yoshifumi Yabuki , Shinichi Ansai , Shiro Uchida , Masao Ikeda
IPC分类号： H01L21/205 , H01S5/042 , H01S5/22 , H01S5/323 , H01S5/40 , H01S3/10 , H01S3/082 , H01S3/14 , H01S5/00
CPC分类号： H01S5/4031 , H01S5/0425 , H01S5/32341 , H01S5/4087
摘要： A multi-beam semiconductor laser device capable of emitting respective laser beams with uniform optical output levels and enabling easy alignment is provided. This multi-beam semiconductor laser device (40) is a GaN base multi-beam semiconductor laser device provided with four laser stripes (42A, 42B, 42C and 42D) which are capable of emitting laser beams with the same wavelength. The respective laser oscillating regions (42A to 42D) are provided with a p-type common electrode (48) on a mesa structure (46) which is formed on a sapphire substrate (44), and have active regions (50A, 50B, 50C and 50D) respectively. Two n-type electrodes (52A and 52B) are provided on an n-type GaN contact layer (54) and located as common electrodes opposite to the p-type common electrode (48) on both sides of the mesa structure (46). The distance A between the laser stripe (42A) and the laser stripe (42D) is no larger than 100 μm. The distance B1 between the laser stripe (42A) and the n-type electrode (52B) is no larger than 150 μm while the distance B2 between the laser stripe (42D) and the n-type electrode (52A) is no larger than 150 μm.
摘要翻译：提供能够发射具有均匀光输出水平的各激光束并且能够容易对准的多光束半导体激光器装置。该多光束半导体激光器件（40）是具有能够发射具有相同波长的激光束的四个激光条纹（42A，42B，42C和42D）的GaN基多光束半导体激光器件。相应的激光振荡区域（42A至42D）在形成在蓝宝石衬底（44）上的台面结构（46）上设置有p型公共电极（48），并具有活性区域（50A， 50B，50C和50D）。在n型GaN接触层（54）上设置两个n型电极（52A和52B），并且位于与台面结构（46）的两侧的p型公共电极（48）相对的公共电极）。激光条纹（42A）与激光条纹（42D）之间的距离A不大于100μm。激光条纹（42A）和n型电极（52B）之间的距离B 1 <1>不大于150μm，而激光之间的距离B 2 <2> 条纹（42D）和n型电极（52A）不大于150μm。

8. 发明申请

US20050000407A1 Semiconductor laser, semiconductor device and nitride series III-V group compound substrate, as well as manufacturing method thereof 审中-公开
公开(公告)号：US20050000407A1
公开(公告)日：2005-01-06
申请号：US10909911
申请日：2004-08-02
申请人： Motonobu Takeya , Katsunori Yanashima , Takeharu Asano , Osamu Goto , Shinro Ikeda , Katsuyoshi Shibuya , Tomonori Hino , Satoru Kijima , Masao Ikeda
发明人： Motonobu Takeya , Katsunori Yanashima , Takeharu Asano , Osamu Goto , Shinro Ikeda , Katsuyoshi Shibuya , Tomonori Hino , Satoru Kijima , Masao Ikeda
IPC分类号： H01L21/20 , H01L33/00 , H01S5/02 , H01S5/343 , C30B15/00 , C30B21/06 , C30B23/00 , C30B25/00 , C30B27/02 , C30B28/10 , C30B28/12 , C30B28/14 , C30B30/04
CPC分类号： B82Y20/00 , H01L21/0237 , H01L21/02378 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L33/0075 , H01S5/0207 , H01S5/0422 , H01S5/22 , H01S5/34333 , H01S2304/12
摘要： A semiconductor laser, a semiconductor device and a nitride series III-V group compound substrate capable of obtaining a crystal growth layer with less fluctuation of the crystallographic axes and capable of improving the device characteristics, as well as a manufacturing method therefor are provided. The semiconductor laser comprises, on one surface of a substrate used for growing, a plurality of spaced apart seed crystal layers and an n-side contact layer having a lateral growing region which is grown on the basis of the plurality of seed crystal layers. The seed crystal layer is formed in that a product of width w1 (unit: μm) at the boundary thereof relative to the n-side contact layer along the arranging direction A and a thickness t1 (unit: μm) along the direction of laminating the n-side contact layer is 15 or less. This can decrease the fluctuation of the crystallographic axes in the n-side contact layer. Accordingly, crystallinity of the semiconductor layer including from n-type clad layer to a p-side contact layer laminated on the n-side contact layer is improved. A semiconductor laser and a semiconductor device capable of decreasing dislocation density and improving device characteristics, as well as a manufacturing method therefor are provided. A semiconductor layer comprising a nitride series III-V group compound semiconductor is laminated on a substrate 11 comprising an n-type GaN. Protruded seed crystal portions are formed and a growth suppression layer having an opening corresponding to the seed crystal portion is disposed to the substrate. The semiconductor layer grows on the basis of the seed crystal portion and has a lateral growing region of low dislocation density. When a current injection region is disposed corresponding to the lateral growing region, the light emission efficiency can be improved. Further, when the growth suppression layer is provided with a function of reflecting or absorbing light generated in the semiconductor layer, it is possible to prevent leakage of light or intrusion of stray light from the substrate to suppress generation of noises.

9. 发明申请

US20110183452A1 SEMICONDUCTOR LIGHT EMITTING DEVICE, ITS MANUFACTURING METHOD, SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD 有权
标题翻译：半导体发光器件及其制造方法，半导体器件及其制造方法
公开(公告)号：US20110183452A1
公开(公告)日：2011-07-28
申请号：US13080802
申请日：2011-04-06
申请人： Osamu Goto , Takeharu Asano , Yasuhiko Suzuki , Motonobu Takeya , Katsuyoshi Shibuya , Takashi Mizuno , Tsuyoshi Tojo , Shiro Uchida , Masao Ikeda
发明人： Osamu Goto , Takeharu Asano , Yasuhiko Suzuki , Motonobu Takeya , Katsuyoshi Shibuya , Takashi Mizuno , Tsuyoshi Tojo , Shiro Uchida , Masao Ikeda
IPC分类号： H01L33/44
CPC分类号： H01L33/0075 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01S5/0425 , H01S5/2004 , H01S5/2013 , H01S5/3201 , H01S5/34333 , H01S2301/173 , H01S2304/12
摘要： A method of manufacturing a semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.
摘要翻译：由氮化物III-V族化合物半导体制造的半导体发光器件的制造方法包括由含有In和Ga的第一氮化物III-V化合物半导体，例如InGaN构成的有源层; 由包含In和Ga的不同于第一氮化物III-V化合物半导体的第二氮化物III-V化合物半导体制成的中间层，例如InGaN; 以及由含有Al和Ga的第三氮化物III-V化合物半导体（例如p型AlGaN）制成的覆盖层，其以顺序接触沉积。

10. 发明授权

US07964419B2 Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method 有权
标题翻译：半导体发光器件及其制造方法，半导体器件及其制造方法
公开(公告)号：US07964419B2
公开(公告)日：2011-06-21
申请号：US11969088
申请日：2008-01-03
申请人： Osamu Goto , Takeharu Asano , Yasuhiko Suzuki , Motonobu Takeya , Katsuyoshi Shibuya , Takashi Mizuno , Tsuyoshi Tojo , Shiro Uchida , Masao Ikeda
发明人： Osamu Goto , Takeharu Asano , Yasuhiko Suzuki , Motonobu Takeya , Katsuyoshi Shibuya , Takashi Mizuno , Tsuyoshi Tojo , Shiro Uchida , Masao Ikeda
IPC分类号： H01L21/36
CPC分类号： H01L33/0075 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01S5/0425 , H01S5/2004 , H01S5/2013 , H01S5/3201 , H01S5/34333 , H01S2301/173 , H01S2304/12
摘要： A semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.
摘要翻译：由氮化物III-V化合物半导体制成的半导体发光器件包括由In和Ga等InGaN的第一氮化物III-V化合物半导体构成的有源层; 由包含In和Ga的不同于第一氮化物III-V化合物半导体的第二氮化物III-V化合物半导体制成的中间层，例如InGaN; 以及由含有Al和Ga的第三氮化物III-V化合物半导体（例如p型AlGaN）制成的覆盖层，其以顺序接触沉积。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式