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1. 发明授权

US08982920B2 Submount, submount assembly, and submount assembling method 有权
标题翻译：子安装，底座装配和底座组装方法
公开(公告)号：US08982920B2
公开(公告)日：2015-03-17
申请号：US13364957
申请日：2012-02-02
申请人： Hideki Watanabe , Rintaro Koda , Masaru Kuramoto , Kaori Naganuma , Hiroyuki Yokoyama
发明人： Hideki Watanabe , Rintaro Koda , Masaru Kuramoto , Kaori Naganuma , Hiroyuki Yokoyama
IPC分类号： H01S5/00 , H01S5/22 , B82Y20/00 , H01S5/022 , H01S5/026 , H01S5/028 , H01S5/042 , H01S5/065 , H01S5/14 , H01S5/34 , H01S5/343 , H01S5/40 , H01S5/50
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/02268 , H01S5/02272 , H01S5/0265 , H01S5/0287 , H01S5/0425 , H01S5/0657 , H01S5/141 , H01S5/342 , H01S5/34333 , H01S5/4006 , H01S5/50 , H01S2301/176
摘要： A submount having a structure and a configuration resistant to an increase in manufacturing cost and a reduction in yields or reliability, and including an oblique waveguide is provided. A submount having a first surface and allowing a semiconductor light-emitting element including a waveguide to be fixed on the first surface, the waveguide having an axis line inclined at θWG (degrees) with respect to a normal to a light-incident/emission end surface of the semiconductor light-emitting element, and made of a semiconductor material with a refractive index nLE, the submount includes: a fusion-bonding material layer on the first surface; and an alignment mark formed in the fusion-bonding material layer, the alignment mark allowed to be recognized at an angle θSM=sin−1 [nLE·sin(θWG)/n0], where a refractive index of a light-transmitting medium in proximity to the outside of the light-incident/emission end surface of the semiconductor light-emitting element is n0.
摘要翻译：提供了具有抵抗制造成本增加和产量或可靠性降低的结构和结构的基座，并且包括倾斜波导。具有第一表面并且允许包括波导的半导体发光元件固定在第一表面上的基座，所述波导具有倾斜的轴线;相对于光入射/ 所述半导体发光元件的发射端面由折射率为nLE的半导体材料制成，所述基座包括：在所述第一表面上的熔接材料层; 以及形成在熔接材料层中的对准标记，使得能够以角度＆lt; SM = sin-1 [nLE·sin（＆amp; WG）/ n0]来识别对准标记，其中光的折射率在半导体发光元件的光入射/发射端面的外侧附近的发射介质为n0。

2. 发明授权

US08896002B2 Method for producing semiconductor laser, semiconductor laser, optical pickup, and optical disk drive 有权
标题翻译：半导体激光器，半导体激光器，光学拾取器和光盘驱动器的制造方法
公开(公告)号：US08896002B2
公开(公告)日：2014-11-25
申请号：US12568855
申请日：2009-09-29
申请人： Rintaro Koda , Masaru Kuramoto , Eiji Nakayama , Tsuyoshi Fujimoto
发明人： Rintaro Koda , Masaru Kuramoto , Eiji Nakayama , Tsuyoshi Fujimoto
IPC分类号： H01L33/00 , B82Y20/00 , H01S5/323 , H01S5/227 , H01S5/16 , H01S5/343
CPC分类号： H01S5/16 , B82Y20/00 , H01S5/168 , H01S5/2275 , H01S5/2277 , H01S5/34333
摘要： A method for producing a semiconductor laser having an edge window structure includes the steps of forming masks of insulating films on a nitride-based III-V compound semiconductor substrate including first regions and second regions periodically arranged in parallel therebetween; and growing a nitride-based III-V compound semiconductor layer in a region not covered by the masks. The first region between each two adjacent second regions has two or more positions, symmetrical with respect to a center line thereof, where laser stripes are to be formed. The masks are formed on one or both sides of each of the positions where the laser stripes are to be formed at least near a position where edge window structures are to be formed such that the masks are symmetrical with respect to the center line. The nitride-based III-V compound semiconductor layer includes an active layer containing at least indium and gallium.
摘要翻译：一种具有边缘窗结构的半导体激光器的制造方法，其特征在于，在氮化物系III-V族化合物半导体基板上形成绝缘膜的掩模的工序，所述掩模包括第一区域和第二区域，以及在未被掩模覆盖的区域中生长氮化物III-V族化合物半导体层。每个两个相邻的第二区域之间的第一区域具有相对于其中心线对称的两个或更多个位置，其中将形成激光条纹。掩模形成在每个位置的一个或两侧上，其中激光条形成至少靠近要形成边缘窗口结构的位置，使得掩模相对于中心线对称。基于氮化物的III-V族化合物半导体层包括至少含有铟和镓的活性层。

3. 发明授权

US08774245B2 Laser diode 有权
标题翻译：激光二极管
公开(公告)号：US08774245B2
公开(公告)日：2014-07-08
申请号：US12923637
申请日：2010-09-30
申请人： Rintaro Koda , Yusuke Nakayama
发明人： Rintaro Koda , Yusuke Nakayama
IPC分类号： H01S5/183
CPC分类号： H01S5/18308 , B82Y20/00 , H01S5/0014 , H01S5/0208 , H01S5/18358 , H01S5/18369 , H01S5/3202 , H01S5/34333 , H01S5/423
摘要： A laser diode with which high density crystal defect and surface roughness are able to be inhibited from being generated is provided. The laser diode includes a laminated body including an active layer and a current narrowing layer on a substrate. The substrate is an inclined substrate having an off-angle larger than 0 degrees in the direction of [1-100] from (0001) C plane.
摘要翻译：提供了能够抑制高密度晶体缺陷和表面粗糙度的激光二极管的产生。激光二极管包括在基板上包括有源层和电流变窄层的层叠体。衬底是从（0001）C平面沿[1-100]方向偏离角度大于0度的倾斜衬底。

4. 发明授权

US08761221B2 Light-emitting element and method for manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08761221B2
公开(公告)日：2014-06-24
申请号：US12078681
申请日：2008-04-03
申请人： Tomoyuki Oki , Yuji Masui , Yoshinori Yamauchi , Rintaro Koda , Takahiro Arakida
发明人： Tomoyuki Oki , Yuji Masui , Yoshinori Yamauchi , Rintaro Koda , Takahiro Arakida
IPC分类号： H01S5/00
CPC分类号： H01S5/18308 , B82Y20/00 , H01S5/02284 , H01S5/02288 , H01S5/0425 , H01S5/125 , H01S5/18 , H01S5/18311 , H01S5/18338 , H01S5/187 , H01S5/22 , H01S5/221 , H01S5/2231 , H01S5/343 , H01S5/34313 , H01S5/3432 , H01S2301/176 , H01S2301/18
摘要： A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.
摘要翻译：发光元件包括台面结构，其中第一导电类型的第一化合物半导体层，有源层和第二导电类型的第二化合物半导体层以该顺序设置，其中第一化合物半导体层和第二化合物半导体层具有由从台面结构的侧壁部向内延伸的绝缘区域包围的电流收缩区域; 设置成围绕台面结构的壁结构; 连接台面结构和壁结构的至少一个桥结构，壁结构和桥结构各自具有与设置绝缘区域的台面结构部分相同的层结构; 第一电极; 以及设置在所述壁结构的顶面上的第二电极。

5. 发明申请

US20130075772A1 LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20130075772A1
公开(公告)日：2013-03-28
申请号：US13614646
申请日：2012-09-13
申请人： Rintaro Koda , Hideki Watanabe , Masaru Kuramoto , Shunsuke Kono , Takao Miyajima
发明人： Rintaro Koda , Hideki Watanabe , Masaru Kuramoto , Shunsuke Kono , Takao Miyajima
IPC分类号： H01L33/58
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0218 , H01S5/0655 , H01S5/2031 , H01S5/34333 , H01S5/50 , H01S2301/166
摘要： Provided is a light-emitting device including (a) a layer structure obtained by sequentially growing on a base substrate a first compound semiconductor layer of a first conductivity type, (b) an active layer formed of a compound semiconductor, and (c) a second compound semiconductor layer of a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The layer structure formed of at least a part of the second compound semiconductor layer in a thickness direction of the second compound semiconductor layer. The first compound semiconductor layer has a thickness greater than 0.6 μm. A high-refractive index layer formed of a compound semiconductor material having a refractive index higher than a refractive index of a compound semiconductor material of the first compound semiconductor layer is formed in the first compound semiconductor layer.
摘要翻译：提供一种发光器件，其包括（a）通过在基底衬底上依次生长第一导电类型的第一化合物半导体层，（b）由化合物半导体形成的有源层，以及（c）第二导电类型的第二化合物半导体层; 形成在第二化合物半导体层上的第二电极; 和与第一化合物半导体层电连接的第一电极。所述层结构由所述第二化合物半导体层的至少一部分在所述第二化合物半导体层的厚度方向上形成。第一化合物半导体层的厚度大于0.6μm。在第一化合物半导体层中形成由折射率高于第一化合物半导体层的化合物半导体材料的折射率的化合物半导体材料形成的高折射率层。

6. 发明授权

US08372670B2 Light-emitting element assembly and method for manufacturing the same 有权
标题翻译：发光元件组件及其制造方法
公开(公告)号：US08372670B2
公开(公告)日：2013-02-12
申请号：US12841812
申请日：2010-07-22
申请人： Rintaro Koda , Takahiro Arakida , Satoshi Taniguchi , Yuji Masui , Nobuhiro Suzuki , Tomoyuki Oki , Chiyomi Uchiyama , Kayoko Kikuchi
发明人： Rintaro Koda , Takahiro Arakida , Satoshi Taniguchi , Yuji Masui , Nobuhiro Suzuki , Tomoyuki Oki , Chiyomi Uchiyama , Kayoko Kikuchi
IPC分类号： G01R31/26 , H01L21/66
CPC分类号： H01S5/18311 , H01L33/0079 , H01L33/44 , H01L33/62 , H01L33/647 , H01L2924/0002 , H01S5/0207 , H01S5/0215 , H01S5/0216 , H01S5/0217 , H01S5/02272 , H01S5/0425 , H01L2924/00
摘要： A method for making a light-emitting element assembly including a support substrate having a first surface, a second surface facing the first surface, a recessed portion, and a conductive material layer formed over the first surface and the inner surface of the recessed portion, and a light-emitting element. The light-emitting element has a laminated structure including a first compound semiconductor layer, a light-emitting portion, and a second compound semiconductor layer, at least the second compound semiconductor layer and the light-emitting portion constituting a mesa structure. The light-emitting element further includes an insulating layer formed, a second electrode, and a first electrode. The mesa structure is placed in the recessed portion so that the conductive material layer and the second electrode are in at least partial contact with each other, and light emitted from the light-emitting portion is emitted from the second surface side of the first compound semiconductor layer.
摘要翻译：一种制造发光元件组件的方法，包括：具有形成在所述凹部的所述第一表面和所述内表面上的第一表面，面向所述第一表面的第二表面，凹陷部分和导电材料层的支撑基板，和发光元件。发光元件具有包括第一化合物半导体层，发光部和第二化合物半导体层的层叠结构，至少第二化合物半导体层和构成台面结构的发光部。发光元件还包括形成的绝缘层，第二电极和第一电极。台面结构被放置在凹部中，使得导电材料层和第二电极彼此至少部分接触，并且从发光部分发射的光从第一化合物半导体的第二表面侧发射层。

7. 发明授权

US08035187B2 Semiconductor light receiving element and optical communication system 有权
标题翻译：半导体光接收元件和光通信系统
公开(公告)号：US08035187B2
公开(公告)日：2011-10-11
申请号：US12362066
申请日：2009-01-29
申请人： Yoshinori Yamauchi , Takahiro Arakida , Rintaro Koda , Norihiko Yamaguchi , Yuji Masui , Tomoyuki Oki
发明人： Yoshinori Yamauchi , Takahiro Arakida , Rintaro Koda , Norihiko Yamaguchi , Yuji Masui , Tomoyuki Oki
IPC分类号： H01L31/00
CPC分类号： H01L31/1055 , G02B6/42 , G02B6/4206 , G02B6/4246
摘要： The present invention provides a semiconductor light receiving element capable of reducing capacity while minimizing increase in travel time of carriers. The semiconductor light receiving element includes a semiconductor stacked structure including a first conductivity type layer, a light absorbing layer, and a second conductivity type layer having a light incidence plane in order. The semiconductor light receiving element has an oxidation layer including a non-oxidation region and an oxidation region in a stacking in-plane direction in the light absorbing layer or between the first conductivity type layer and the light absorbing layer.
摘要翻译：本发明提供一种半导体光接收元件，其能够在最小化载体的行进时间的增加的同时降低容量。半导体光接收元件包括具有第一导电类型层，光吸收层和具有光入射面的第二导电类型层的半导体堆叠结构。半导体光接收元件在光吸收层中或第一导电型层与光吸收层之间具有包括非氧化区域和层叠面内方向的氧化区域的氧化层。

8. 发明授权

US07965750B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US07965750B2
公开(公告)日：2011-06-21
申请号：US12385811
申请日：2009-04-21
申请人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Rintaro Koda , Tomoyuki Oki , Naoki Jogan
发明人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Rintaro Koda , Tomoyuki Oki , Naoki Jogan
IPC分类号： H01S5/00 , H01S3/094
CPC分类号： H01S5/1833 , H01S5/0215 , H01S5/0217 , H01S5/0224 , H01S5/0421 , H01S5/0425 , H01S5/18311 , H01S5/18316 , H01S5/18322 , H01S5/18325 , H01S5/18383 , H01S5/2086 , H01S5/3095 , H01S5/4087
摘要： A semiconductor light emitting device includes a first-conductivity-type first multilayer film reflecting mirror, and a second-conductivity-type second multilayer film reflecting mirror; a cavity layer; and a first conductive section, a second conductive section, and a third conductive section. The cavity layer has a stacked configuration including a first-conductivity-type or undoped first cladding layer, an undoped first active layer, a second-conductivity-type or undoped second cladding layer, a second-conductivity-type first contact layer, a first-conductivity-type second contact layer, a first-conductivity-type or undoped third cladding layer, an undoped second active layer, and a second-conductivity-type or undoped fourth cladding layer. The first conductive section is electrically connected to the first multilayer film reflecting mirror, the second conductive section is electrically connected to the second multilayer film reflecting mirror, and the third conductive section is electrically connected to the first contact layer and the second contact layer.
摘要翻译：半导体发光器件包括第一导电型第一多层膜反射镜和第二导电型第二多层膜反射镜; 空腔层; 以及第一导电部分，第二导电部分和第三导电部分。空腔层具有包括第一导电型或未掺杂的第一包层，未掺杂的第一有源层，第二导电型或未掺杂的第二包覆层，第二导电类型的第一接触层，第一导电类型的第一接触层导电型第二接触层，第一导电型或未掺杂第三包层，未掺杂的第二有源层和第二导电型或未掺杂的第四包覆层。第一导电部电连接到第一多层膜反射镜，第二导电部与第二多层膜反射镜电连接，第三导电部与第一接触层和第二接触层电连接。

9. 发明授权

US07880178B2 Semiconductor device and method of manufacturing the same 有权
公开(公告)号：US07880178B2
公开(公告)日：2011-02-01
申请号：US12081354
申请日：2008-04-15
申请人： Rintaro Koda , Takahiro Arakida , Yuji Masui , Tomoyuki Oki
发明人： Rintaro Koda , Takahiro Arakida , Yuji Masui , Tomoyuki Oki
IPC分类号： H01L31/12
CPC分类号： H01S5/0262 , H01S5/0264 , H01S5/0425 , H01S5/18311 , H01S5/18375
摘要： The present invention provides a semiconductor device realizing reduced occurrence of a defect such as a crack at the time of adhering elements to each other. The semiconductor device includes a first element and a second element adhered to each other. At least one of the first and second elements has a pressure relaxation layer on the side facing the other of the first and second elements, and the pressure relaxation layer includes a semiconductor part having a projection/recess part including a projection projected toward the other element, and a resin part filled in a recess in the projection/recess part.

10. 发明申请

US20110019709A1 Semiconductor device and method of manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20110019709A1
公开(公告)日：2011-01-27
申请号：US12805029
申请日：2010-07-08
申请人： Yuji Masui , Takahiro Arakida , Naoki Jogan , Rintaro Koda , Kouichi Kondo
发明人： Yuji Masui , Takahiro Arakida , Naoki Jogan , Rintaro Koda , Kouichi Kondo
IPC分类号： H01S5/02 , H01L33/62 , H01L31/02
CPC分类号： H01S5/0425 , H01L24/24 , H01L33/385 , H01L33/62 , H01L2924/12041 , H01L2924/12043 , H01L2924/14 , H01S5/18311 , H01S5/18347 , H01S5/423 , H01L2924/00
摘要： The present invention provides a method of manufacturing a semiconductor device realizing improved yield. The semiconductor device includes: a substrate having a top face, an under face, and side faces; an optical function unit formed on the top face; a plurality of electrode pads formed on the under face; and a wiring formed on at least the side face and electrically connecting the optical function unit and at least one of the plurality of electrode pads.
摘要翻译：本发明提供一种制造实现提高产量的半导体器件的方法。半导体器件包括：具有顶面，底面和侧面的基板; 形成在上表面上的光学功能单元; 形成在下表面上的多个电极焊盘; 以及形成在至少所述侧面上并且电连接所述光学功能单元和所述多个电极焊盘中的至少一个的布线。

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