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41. 发明申请

US20070048779A1 Method for detecting target plant genus 有权
标题翻译：检测目标植物属的方法
公开(公告)号：US20070048779A1
公开(公告)日：2007-03-01
申请号：US11581872
申请日：2006-10-17
申请人： Takashi Hirao , Masayuki Hiramoto
发明人： Takashi Hirao , Masayuki Hiramoto
IPC分类号： C12Q1/68 , C12P19/34
CPC分类号： C12Q1/6895
摘要： A method for detecting species in a target plant genus comprises the steps of conducting PCR using at least one member selected from the group consisting of primers (A) and (B), which can hybridize under stringent conditions to a nucleic acid molecule having a common nucleotide sequence for all species in the target plant genus in 45S rRNA precursor gene sequence thereof, wherein 3′ end of primer (A) can complementarily bind to a base in ITS-1 sequence of the target plant genus when the primer hybridizes to the nucleic acid molecule while 3′ end of primer (B) can complementarily bind to a base in ITS-2 sequence of the target plant genus when the primer hybridizes to the nucleic acid molecule, and identifying the presence of the resulting amplification product from PCR containing at least a part of ITS-1 or ITS-2 sequence of the target plant genus. The method for detecting species in a target plant genus, particularly an allergenic plant genus such as the genus Fagopyrum, can make it possible to detect with high sensitivity, for example, about 1 ppm of the plant(s) in cases where the plant(s) is contained in a food ingredient or food product.
摘要翻译：一种用于检测目标植物属物种的方法，包括以下步骤：使用选自引物（A）和（B）中的至少一种成员进行PCR，其可在严格条件下与具有共同的核酸分子杂交在45S rRNA前体基因序列中的目标植物属中的所有物种的核苷酸序列，其中引物（A）的3'末端可以在引物与核酸杂交时与靶植物属的ITS-1序列中的碱基互补结合酸分子，而当引物与核酸分子杂交时，引物（B）的3'末端可以与靶植物属的ITS-2序列中的碱基互补结合，并且从PCR中鉴定所得扩增产物的存在，目标植物属的ITS-1或ITS-2序列的至少一部分。用于检测目标植物属，特别是变应原植物属（如禾本科）的物种的方法可以使得可以以高灵敏度检测例如约1ppm的植物（例如植物（ s）包含在食品成分或食品中。

42. 发明授权

US07144702B2 Method for detecting target plant genus 有权
标题翻译：检测目标植物属的方法
公开(公告)号：US07144702B2
公开(公告)日：2006-12-05
申请号：US10285061
申请日：2002-10-31
申请人： Takashi Hirao , Masayuki Hiramoto
发明人： Takashi Hirao , Masayuki Hiramoto
IPC分类号： C12Q1/68 , C12P19/34
CPC分类号： C12Q1/6895
摘要： A method for detecting species in a target plant genus comprises the steps of conducting PCR using at least one member selected from the group consisting of primers (A) and (B), which can hybridize under stringent conditions to a nucleic acid molecule having a common nucleotide sequence for all species in the target plant genus in 45S rRNA precursor gene sequence thereof, wherein 3′ end of primer (A) can complementarily bind to a base in ITS-1 sequence of the target plant genus when the primer hybridizes to the nucleic acid molecule while 3′ end of primer (B) can complementarily bind to a base in ITS-2 sequence of the target plant genus when the primer hybridizes to the nucleic acid molecule, and identifying the presence of the resulting amplification product from PCR containing at least a part of ITS-1 or ITS-2 sequence of the target plant genus.The method for detecting species in a target plant genus, particularly an allergenic plant genus such as the genus Fagopyrum, can make it possible to detect with high sensitivity, for example, about 1 ppm of the plant(s) in cases where the plant(s) is contained in a food ingredient or food product.
摘要翻译：一种用于检测目标植物属物种的方法，包括以下步骤：使用选自引物（A）和（B）中的至少一种成员进行PCR，其可在严格条件下与具有共同的核酸分子杂交在45S rRNA前体基因序列中的目标植物属中的所有物种的核苷酸序列，其中引物（A）的3'末端可以在引物与核酸杂交时与靶植物属的ITS-1序列中的碱基互补结合酸分子，而当引物与核酸分子杂交时，引物（B）的3'末端可以与靶植物属的ITS-2序列中的碱基互补结合，并且从PCR中鉴定所得扩增产物的存在，目标植物属的ITS-1或ITS-2序列的至少一部分。用于检测目标植物属，特别是变应原植物属（如禾本科）的物种的方法可以使得可以以高灵敏度检测例如约1ppm的植物（例如植物（ s）包含在食品成分或食品中。

43. 发明授权

US6127211A Method of manufacturing transistor 有权
标题翻译：制造晶体管的方法
公开(公告)号：US6127211A
公开(公告)日：2000-10-03
申请号：US162450
申请日：1998-09-29
申请人： Takashi Hirao , Akihisa Yoshida , Toru Fukumoto , Kazuyasu Adachi
发明人： Takashi Hirao , Akihisa Yoshida , Toru Fukumoto , Kazuyasu Adachi
IPC分类号： H01L21/18 , H01L21/336 , H01L21/84 , H01L29/786
CPC分类号： H01L29/78621
摘要： In a method of manufacturing a semiconductor device having an LDD structure, source gases for generating plural types of impurity ions exhibiting different molecular weights and different projected ranges in a target during impurity implantation are supplied to a plasma space, ionized, accelerated with a voltage, and implanted in a semiconductor region on the target substrate. In the case of manufacturing a top-gate transistor, a gate electrode on the semiconductor region has a sufficient thickness to serve as a mask. In the case of manufacturing a bottom-gate transistor, a mask and a resistor are used. An implantation angle is set to an optimum value as desired. Thereafter, the impurity is activated as desired. Thus, the semiconductor device having the LDD structure is manufactured by a single step of impurity implantation.
摘要翻译：在制造具有LDD结构的半导体器件的方法中，在杂质注入期间在靶中产生表现出不同分子量和不同投影范围的多种杂质离子的源气体被提供给等离子体空间，电离电压加速，并注入目标衬底上的半导体区域。在制造顶栅晶体管的情况下，半导体区域上的栅电极具有足够的厚度用作掩模。在制造底栅晶体管的情况下，使用掩模和电阻器。根据需要将植入角度设定为最佳值。此后，根据需要激活杂质。因此，具有LDD结构的半导体器件通过杂质注入的一个步骤来制造。

44. 发明授权

US5814194A Substrate surface treatment method 失效
标题翻译：基材表面处理方法
公开(公告)号：US5814194A
公开(公告)日：1998-09-29
申请号：US542008
申请日：1995-10-12
申请人： Masahiro Deguchi , Akihisa Yoshida , Makoto Kitabatake , Takashi Hirao
发明人： Masahiro Deguchi , Akihisa Yoshida , Makoto Kitabatake , Takashi Hirao
IPC分类号： C30B33/00 , C30B33/12
CPC分类号： C30B33/00 , C30B29/04 , H01J2237/0812 , Y10T428/24355 , Y10T428/24479 , Y10T428/30
摘要： Cluster particles including a plurality of molecules or atoms are prepared by a gas cluster method, are accelerated, and are then irradiated onto a diamond in a low pressure atmosphere, so that the unevenness surfaces of the diamond are smoothed with no damages in the diamond. The cluster particles are prepared by the steps of forming, ionizing, mass-separating, and accelerating cluster particles. The cluster particles with a certain energy are irradiated onto the surface of the diamond. Irradiated cluster particles collide with the surface of the diamond, and then break apart into each molecule or atom while changing momentum (direction and speed) or energy. Thus, the surface of the diamond is efficiently smoothed and etched.
摘要翻译：包含多个分子或原子的簇粒子通过气体簇法制备，被加速，然后在低压气氛中照射到金刚石上，使得金刚石的不平坦表面在金刚石中没有损坏的情况下被平滑化。通过形成，离子化，质量分离和加速簇粒子的步骤制备簇粒子。具有一定能量的簇粒子被照射到金刚石的表面上。辐照的簇粒子与金刚石的表面碰撞，然后在改变动量（方向和速度）或能量的同时分解成每个分子或原子。因此，金刚石的表面被有效地平滑和蚀刻。

45. 发明授权

US5674366A Method and apparatus for fabrication of dielectric thin film 失效
标题翻译：电介质薄膜的制造方法和装置
公开(公告)号：US5674366A
公开(公告)日：1997-10-07
申请号：US483873
申请日：1995-06-07
申请人： Shigenori Hayashi , Kazuki Komaki , Takeshi Kamada , Masatoshi Kitagawa , Takashi Deguchi , Ryoichi Takayama , Takashi Hirao
发明人： Shigenori Hayashi , Kazuki Komaki , Takeshi Kamada , Masatoshi Kitagawa , Takashi Deguchi , Ryoichi Takayama , Takashi Hirao
IPC分类号： C23C14/00 , C23C14/08 , C23C14/58 , G02F1/00 , H01L21/314 , H01L21/316 , H01L37/02 , H01L41/316 , C23C14/34
CPC分类号： C23C14/5853 , C23C14/0078 , C23C14/088 , H01L21/02197 , H01L21/02266 , H01L21/314 , H01L21/31691 , H01L37/025 , H01L41/1875 , H01L41/316 , G02F1/0027
摘要： A method whereby perovskite type oxide dielectric thin films with ABO.sub.3 structure are able to be formed with such features as good stability, uniformity, reproducibility, or the like, with high through-put by having a deposition process, wherein the thin films are deposited on a substrate, and a stabilization process, where no deposition of the thin films takes place, repeated alternatingly while the substrate temperature being kept near the temperature at which perovskite type oxide dielectric thin films are formed. Also, by employing (i) a processing method wherein a decomposing excitation of a reactive gas due to plasma takes place on or near the deposition surface in a gaseous atmosphere comprising a gas that reacts with the elements composing the thin films, (ii) a processing method wherein an oxidation reaction takes place on the deposition surface in a gaseous atmosphere comprising at least ozone (O.sub.3), and (iii) a processing method wherein light of short wave length is irradiated on the deposition surface in a gaseous atmosphere comprising at least reactive elements in the non-deposition process, the oxygen concentration in the deposited thin films is adjusted and dielectric thin films of good quality and an extremely low defect content are realized.
摘要翻译：具有ABO3结构的钙钛矿型氧化物电介质薄膜能够通过具有沉积工艺的高通量形成具有良好的稳定性，均匀性，再现性等特性的方法，其中薄膜沉积在基板和稳定化处理，其中不存在薄膜的沉积，在衬底温度保持接近形成钙钛矿型氧化物电介质薄膜的温度的同时交替重复。此外，通过采用以下处理方法：（i）在包含与组成薄膜的元素反应的气体的气体气氛中，在等离子体发生的反应性气体的分解激发发生在沉积表面上或其附近的处理方法，（ii）处理方法，其中在至少包含臭氧（O 3）的气体气氛中在沉积表面上发生氧化反应，和（iii）其中在至少包括至少包含臭氧（O 3）的气体气氛中在沉积表面上照射短波长的光的处理方法在非沉积工艺中的非活性元素，沉积的薄膜中的氧浓度被调节，并且实现了良好质量和极低缺陷含量的介电薄膜。

46. 发明授权

US5662965A Method of depositing crystalline carbon-based thin films 失效
标题翻译：沉积结晶碳基薄膜的方法
公开(公告)号：US5662965A
公开(公告)日：1997-09-02
申请号：US351739
申请日：1994-12-08
申请人： Masahiro Deguchi , Masatoshi Kitagawa , Takashi Hirao
发明人： Masahiro Deguchi , Masatoshi Kitagawa , Takashi Hirao
IPC分类号： B32B9/00 , C23C14/02 , C23C14/06 , C23C14/24 , H01B1/06 , H01B5/14 , H01B13/00 , C23C16/00 , B05D3/06 , C23C14/30
CPC分类号： C23C14/027 , C23C14/0605 , C23C14/0635 , Y10S427/103
摘要： Crystalline carbon-based thin film structures are formed in which a compositionally-graded intermediate layer is first deposited on a substrate, and a crystalline carbon-based thin film such as silicon carbide or diamond is deposited thereafter on the intermediate layer. The compositionally-graded intermediate layer has a carbon content which increases in a direction away from the substrate. The compositionally-graded intermediate layer is effective in reducing problems associated with the lattice mismatch between the thin film and the substrate which hamper conventional hetero-epitaxial growth of high quality crystalline carbon-based thin films.
摘要翻译：形成结晶碳基薄膜结构，其中首先在基板上沉积组成梯度的中间层，然后在中间层上沉积诸如碳化硅或金刚石的结晶碳基薄膜。组分梯度的中间层具有在远离基底的方向上增加的碳含量。组分梯度的中间层有效地减少与薄膜和衬底之间的晶格失配相关的问题，这妨碍了高质量结晶碳基薄膜的常规异质外延生长。

47. 发明授权

US5507080A Method of manufacturing a capacitance sensor 失效
标题翻译：制造电容式传感器的方法
公开(公告)号：US5507080A
公开(公告)日：1996-04-16
申请号：US353315
申请日：1994-12-05
申请人： Shigenori Hayashi , Takeshi Kamada , Hideo Torii , Takashi Hirao
发明人： Shigenori Hayashi , Takeshi Kamada , Hideo Torii , Takashi Hirao
IPC分类号： G01D5/241 , G01L9/00 , G01P15/125 , H01G5/16
CPC分类号： G01L9/0072 , G01D5/2417 , G01P15/125 , Y10T29/43
摘要： A small and highly sensitive capacitance type pressure sensor is obtained by filling an alkali halide material such as KBr into a through-hole, forming a conductive thin film on the surface, and dissolving and removing the alkali halide material. An insulating plate disposed with a through-hole in the thickness direction is filled with a molten alkali halide material such as KBr. After forming a conductive thin film on the surface of the alkali halide material filled into the through-hole and the vicinity thereof, the alkali halide material is dissolved by water and removed. In this way, a diaphragm is made of the through-hole and the conductive thin film. A curve of the diaphragm caused by a pressure difference between the both faces of the conductive thin film is detected as a capacitance change between the conductive thin film and the electrode layer.
摘要翻译：通过将诸如KBr的碱金属卤化物材料填充到通孔中，在表面上形成导电薄膜，并溶解和除去碱金属卤化物材料，获得小而高灵敏度的电容式压力传感器。在厚度方向上设置有通孔的绝缘板填充有诸如KBr的熔融卤化碱材料。在填充到通孔及其附近的碱金属卤化物材料的表面上形成导电薄膜之后，碱金属卤化物材料被水溶解并除去。以这种方式，隔膜由通孔和导电薄膜制成。由导电薄膜的两面之间的压力差引起的隔膜的曲线被检测为导电薄膜和电极层之间的电容变化。

48. 发明授权

US5431733A Low vapor-pressure material feeding apparatus 失效
标题翻译：低气压材料送料装置
公开(公告)号：US5431733A
公开(公告)日：1995-07-11
申请号：US83300
申请日：1993-06-29
申请人： Munehiro Shibuya , Masatoshi Kitagawa , Takeshi Kamada , Takashi Hirao
发明人： Munehiro Shibuya , Masatoshi Kitagawa , Takeshi Kamada , Takashi Hirao
IPC分类号： C23C16/44 , C23C16/448 , C23C16/455 , C23C16/52 , C23C16/00
CPC分类号： C23C16/4482
摘要： A low vapor-pressure material feeding apparatus comprises a bubbler (4, 5), accommodating a low vapor-pressure material (6) therein, for bubbling the low vapor-pressure material (6) with an inert gas fed from an inert gas container (3). A bifurcated gas feeding passage (51, 8) is provided between the gas container (3) and a vacuum chamber (50). One branch passage directly introduces an inert gas into the vacuum chamber (50), and the other branch passage introduces an inert gas into the bubbler (4, 5). A gas mixture of a vaporized low vapor-pressure material (6) and the inert gas, is supplied from the bubbler (4, 5) to a vacuum chamber (50). A gas flow meter (7) detects a flow amount of the gas mixture. On a basis of a gas flow amount detected by the gas flow meter (7), an inert gas controller (10) adjusts a feeding amount of inert gas so that a total amount of an inert gas introduced directly into said vacuum chamber (50) and an inert gas introduced into the bubbler (4, 5) is kept at a constant value.
摘要翻译：低蒸气压材料输送装置包括一个容纳低蒸气压材料（6）的起泡器（4,5），用于使惰性气体从惰性气体容器（3）。在气体容器（3）和真空室（50）之间设置有分支气体供给通路（51,8）。一个分支通道直接将惰性气体引入真空室（50），另一个分支通道将惰性气体引入起泡器（4,5）中。蒸发的低蒸气压材料（6）和惰性气体的气体混合物从起泡器（4,5）供应到真空室（50）。气体流量计（7）检测气体混合物的流量。基于由气体流量计（7）检测到的气体流量，惰性气体控制器（10）调节惰性气体的供给量，使得直接引入所述真空室（50）的惰性气体的总量，引入起泡器（4,5）中的惰性气体保持恒定值。

49. 发明授权

US5252174A Method for manufacturing substrates for depositing diamond thin films 失效
标题翻译：制造用于沉积金刚石薄膜的衬底的方法
公开(公告)号：US5252174A
公开(公告)日：1993-10-12
申请号：US888430
申请日：1992-05-28
申请人： Masahiro Deguchi , Takashi Hirao
发明人： Masahiro Deguchi , Takashi Hirao
IPC分类号： C23C14/48 , C23C16/02 , C30B25/02 , C30B25/18 , C30B25/08
CPC分类号： C30B25/18 , C23C14/48 , C23C16/0209 , C23C16/0272 , C30B25/02 , C30B29/04
摘要： A method for manufacturing substrates for depositing diamond thin films is disclosed.In the method, a hydrocarbon gas is discharge-decomposed, products generated by the discharge decomposition are accelerated to implant them in a surface layer of a substrate made of a material other than diamond and, thereby, the surface layer having bondings of carbon atoms and atoms compositing the substrate. Desirably, the substrate thus manufactured is subjected to a heat treatment at a temperature ranging from 800.degree. to 1,200.degree. C.
摘要翻译：公开了一种制造用于沉积金刚石薄膜的衬底的方法。在该方法中，碳氢化合物气体被放电分解，通过放电分解产生的产物被加速以将它们植入到由除了金刚石之外的材料制成的衬底的表面层中，从而使表面层具有碳原子和原子合成基底。理想地，将如此制造的基板在800-1200℃的温度下进行热处理。

50. 发明授权

US4859908A Plasma processing apparatus for large area ion irradiation 失效
标题翻译：用于大面积离子照射的等离子体处理装置
公开(公告)号：US4859908A
公开(公告)日：1989-08-22
申请号：US100148
申请日：1987-09-23
申请人： Akihisa Yoshida , Kentaro Setsune , Takashi Hirao
发明人： Akihisa Yoshida , Kentaro Setsune , Takashi Hirao
IPC分类号： C30B31/22 , H01J37/32 , H01J27/02
CPC分类号： H01J37/32091 , C30B31/22 , H01J37/32357 , H01J37/3266
摘要： A plasma processing apparatus performs various plasma processings of a substrate having a large area in a semiconductor element manufacturing process, by using highly excited plasma generated at a low pressure under the application of RF power and a magnetic field. In this plasma processing apparatus, a gas is introduced into a vacuum chamber to be used as an ion source, RF power is applied to two electrodes having respective surfaces opposite to each other through the gas to thereby generate the plasma in the vacuum chamber, and a magnetic field is applied to the plasma from a magnetic field source arranged at a predetermined position. The intensity of the applied magnetic field is set to be 1.5 times or more the magnetic field intensity which causes electron cyclotron resonance to occur at the frequency f of the applied RF power. Particularly, when the frequency f of the RF power is 13.56 MHz, the magnetic field intensity is selected to be in the range from 25 gausses to 35 gausses.
摘要翻译：等离子体处理装置通过使用在RF功率和磁场的应用下在低压下产生的高激发等离子体，在半导体元件制造工艺中执行具有大面积的衬底的各种等离子体处理。在该等离子体处理装置中，将气体引入到真空室中以用作离子源，通过气体将两相电极的两个电极施加RF功率，从而在真空室中产生等离子体，从布置在预定位置的磁场源向等离子体施加磁场。所施加的磁场的强度被设定为在所施加的RF功率的频率f处发生电子回旋共振的磁场强度的1.5倍或更多。特别地，当RF功率的频率f为13.56MHz时，磁场强度被选择在从25高斯到35高斯的范围内。

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