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1. 发明申请

US20100039033A1 PLASMA DISPLAY PANEL AND MANUFACTURING METHOD FOR THE SAME 失效
标题翻译：等离子显示面板及其制造方法
公开(公告)号：US20100039033A1
公开(公告)日：2010-02-18
申请号：US12015310
申请日：2008-01-16
申请人： Yukihiro Morita , Masatoshi Kitagawa , Kiichiro Oishi , Mikihiko Nishitani
发明人： Yukihiro Morita , Masatoshi Kitagawa , Kiichiro Oishi , Mikihiko Nishitani
IPC分类号： H01J17/49 , H01J9/24
CPC分类号： H01J11/40 , H01J9/02 , H01J11/12
摘要： A plasma display panel in which a first substrate having a protective layer formed thereon opposes a second substrate across a discharge space, with the substrates being sealed around a perimeter thereof. At a surface of the protective layer, first and second materials of different electron emission properties are exposed to the discharge space, with at least one of the materials existing in a dispersed state. The first and second materials may be first and second crystals, and the second crystal may be dispersed throughout the first crystal.
摘要翻译：一种等离子体显示面板，其中形成有保护层的第一基板横跨放电空间与第二基板相对，基板围绕其周边被密封。在保护层的表面上，具有不同电子发射特性的第一和第二材料暴露于放电空间，其中至少一种材料以分散状态存在。第一和第二材料可以是第一和第二晶体，并且第二晶体可以分散在整个第一晶体中。

2. 发明申请

US20080315768A1 Plasma Display Panel and Method for Manufacturing Same 失效
标题翻译：等离子显示面板及其制造方法
公开(公告)号：US20080315768A1
公开(公告)日：2008-12-25
申请号：US11572900
申请日：2005-08-11
申请人： Hiroyuki Yamakita , Masatoshi Kitagawa , Mikihiko Nishitani
发明人： Hiroyuki Yamakita , Masatoshi Kitagawa , Mikihiko Nishitani
IPC分类号： H01J17/49 , H01J9/26
CPC分类号： H01J11/24 , H01J9/02 , H01J11/12 , H01J11/38 , H01J2211/245 , H01J2211/323
摘要： A PDP (101) with a reduced discharge inception voltage and discharge sustaining voltage for improving luminous efficiency has at least a pair of substrates (110 and 111) that are disposed in opposition to sandwich a discharge space therebetween. At least a portion of at least one of the substrates has two or more display electrode pairs (104) that include narrow bus electrodes (159 and 169), a dielectric layer (107) formed so as to cover the display electrode pairs (104), and a protective layer (108) formed so as to cover the dielectric layer (107). The dielectric layer (107) has a dense film structure with a dielectric breakdown voltage of 1.0×106 [V/cm] to 1.0×107 [V/cm].
摘要翻译：具有降低的放电起始电压和放电维持电压以提高发光效率的PDP（101）具有至少一对基板（110和111），所述基板相对于其间夹着放电空间设置。至少一个基板的至少一部分具有两个或更多个显示电极对（104），其包括窄的总线电极（159和169），形成为覆盖显示电极对（104）的电介质层（107），和形成为覆盖电介质层（107）的保护层（108）。电介质层（107）具有介电击穿电压为1.0×10 6 [V / cm]至1.0×10 7 [V / cm]的致密膜结构。

3. 发明申请

US20080278074A1 Gas Discharge Display Panel 失效
标题翻译：气体放电显示面板
公开(公告)号：US20080278074A1
公开(公告)日：2008-11-13
申请号：US10594294
申请日：2005-04-07
申请人： Shinichi Yamamoto , Mikihiko Nishitani , Masaharu Terauchi , Jun Hashimoto , Masatoshi Kitagawa
发明人： Shinichi Yamamoto , Mikihiko Nishitani , Masaharu Terauchi , Jun Hashimoto , Masatoshi Kitagawa
IPC分类号： H01J17/49 , H01J9/02
CPC分类号： H01J11/12 , H01J11/40
摘要： Provided is a gas discharge display panel that exhibits a favorable display performance by maintaining a wall charge retaining power, controlling discharge delay within a range adequate for optimal image display, and reducing the discharge starting voltage at comparatively low cost. Also provided is a PDP that exhibits more reliability with enhanced display quality by further improving the secondary electron emission factor γ compared to conventional cases and lowering the discharge starting voltage to widen the driving margin. Further provided is a manufacturing method of a gas discharge display panel, by which the manufacturing cost lowers by reduction of the exhaustion time in the sealing exhaustion process, and by which the driving circuit cost is reduced. In a gas discharge display panel of the present invention, a protective layer (15) has a first protective film (151) and a second protective film (152), the second protective film (152) is formed on at least part of a surface of the first protective film (151), and the first protective film (151) has a larger impurity content than the second protective film (152).
摘要翻译：提供一种气体放电显示面板，其通过保持壁电荷保持功率而显示良好的显示性能，将放电延迟控制在适于最佳图像显示的范围内，并且以相对低的成本降低放电启动电压。还提供了一种PDP，其通过与常规情况相比进一步改善二次电子发射因子γ并降低放电起始电压以扩大驱动裕度，显示出具有增强的显示质量的更高的可靠性。进一步提供一种气体放电显示面板的制造方法，通过减少密封耗尽处理中的耗尽时间，降低制造成本，降低驱动电路成本。在本发明的气体放电显示面板中，保护层（15）具有第一保护膜（151）和第二保护膜（152），第二保护膜（152）形成在表面的至少一部分上的第一保护膜（151），并且第一保护膜（151）的杂质含量比第二保护膜（152）大。

4. 发明申请

US20060250147A1 Insulating film measuring device, insulating film measuring method, insulating film evaluating device, insulating film evaluating method, substrate for electric discharge display element, and plasma display panel 审中-公开
标题翻译：绝缘膜测定装置，绝缘膜测定方法，绝缘膜评价装置，绝缘膜评价方法，放电显示元件用基板，等离子体显示面板
公开(公告)号：US20060250147A1
公开(公告)日：2006-11-09
申请号：US10568985
申请日：2004-08-23
申请人： Yukihiro Morita , Mikihiko Nishitani , Masatoshi Kitagawa , Takaharu Nagotomi
发明人： Yukihiro Morita , Mikihiko Nishitani , Masatoshi Kitagawa , Takaharu Nagotomi
IPC分类号： G01R31/305
CPC分类号： G01N23/2251 , H01J37/252 , H01J2211/40
摘要： A measuring device, a measuring method, and an evaluating device for easily and accurately obtaining information suitable to evaluate, for example, the discharge characteristic of an insulating film such as an MgO protective layer of a plasma display are provided. An MgO film surface, a sample to be measured, is irradiated with electrons or ions emitted from an electron gun (130) or an ion gun (140). The energy distribution of the secondary electrons emitted from the sample is measured by an electron spectrograph (150), and the spectrum data on the measured secondary electrons is supplied to an analyzing device (200). The analyzing device (200) analyzes the spectrum data and determines information (evaluation values) to evaluate the properties of the sample to be measured.
摘要翻译：提供了一种测量装置，测量方法和评估装置，用于容易且准确地获得适合于评价例如等离子体显示器的MgO保护层等绝缘膜的放电特性的信息。用从电子枪（130）或离子枪（140）发射的电子或离子照射待测量的样品的MgO膜表面。通过电子光谱仪（150）测量从样品发射的二次电子的能量分布，并将测量的二次电子的光谱数据提供给分析装置（200）。分析装置（200）分析频谱数据并确定信息（评估值），以评估待测样品的性质。

5. 发明申请

US20050277570A1 Phosphor and method of treating phosphor 失效
标题翻译：磷光体及其处理方法
公开(公告)号：US20050277570A1
公开(公告)日：2005-12-15
申请号：US10528589
申请日：2003-10-07
申请人： Takehiro Zukawa , Masatoshi Kitagawa , Masaharu Terauchi , Junko Asayama
发明人： Takehiro Zukawa , Masatoshi Kitagawa , Masaharu Terauchi , Junko Asayama
IPC分类号： C09K11/08 , C09K11/77 , H01J1/63 , H01J61/44 , C11D1/00
CPC分类号： C09K11/7734 , H01J61/44 , H01J2211/42 , Y10T428/2991 , Y10T428/2993
摘要： The present invention aims at realizing a PDP and a mercury-free fluorescent lamp feasible to maintain excellent luminescent characteristics over long periods by suppressing time-lapse changes in luminescent characteristics of a phosphor that is excited by vacuum ultraviolet light to thereby emit light. To accomplish this object, the oxide phosphor of the invention comprises individual particles, each of which has a region at and near the surface thereof modified, and the elemental composition of the surface region is in a more oxidized state than that of the internal region of the particles. Alternatively, the surface region has more halogen or chalcogen in the elemental composition. In the phosphor treatment method of the invention, the surface region of individual phosphor particles is selectively modified by (i) forming a highly reactive gas atmosphere by exciting gas which contains reactive gas, and (ii) exposing the phosphor to the gas atmosphere.
摘要翻译：本发明旨在实现通过抑制由真空紫外光激发的荧光体的发光特性的延时变化从而发光的方法，实现长时间保持优异发光特性的PDP和无汞荧光灯。为了实现这个目的，本发明的氧化物荧光体包括单个颗粒，每个颗粒在其表面处和附近的区域都被修饰，并且表面区域的元素组成比内部区域的颗粒。或者，表面区域在元素组合物中具有更多的卤素或硫族元素。在本发明的荧光体处理方法中，通过（i）通过激发含有反应性气体的气体形成高反应性气体气氛，并且（ii）将荧光体暴露于气体气氛，来选择性地修饰单个荧光体颗粒的表面区域。

6. 发明授权

US06624462B1 Dielectric film and method of fabricating the same 有权
标题翻译：电介质膜及其制造方法
公开(公告)号：US06624462B1
公开(公告)日：2003-09-23
申请号：US09640520
申请日：2000-08-17
申请人： Naoki Kohara , Taisuke Sawada , Masatoshi Kitagawa , Takeshi Uenoyama
发明人： Naoki Kohara , Taisuke Sawada , Masatoshi Kitagawa , Takeshi Uenoyama
IPC分类号： H01L21331
CPC分类号： H01L28/55 , C23C14/0036 , C23C14/088 , H01B3/12 , H01G4/1227 , H01L21/31122 , H01L21/31691 , Y10S438/957
摘要： A Pt/Ti film is formed on a substrate, and the Pt/Ti film is patterned in to a bottom electrode. Subsequently, a SrTiO3film, that is, a dielectric film, is formed on the substrate by sputtering using a mixture of an Ar gas, an O2 gas and a N2 gas as a film forming gas. The SrTiO3 film is patterned into a capacitor dielectric film formed on the bottom electrode. A top electrode is then formed on the capacitor dielectric film. Since a N2 gas is used as the film forming gas in addition to an Ar/O2 gas, a SrTiO3 film with a high dielectric constant and small leakage can be formed at a low temperature. By using this SrTiO3 film, a thin film capacitor with high capacitance and good dielectric characteristics can be obtained.
摘要翻译：在基板上形成Pt / Ti膜，将Pt / Ti膜图案化成底部电极。随后，使用Ar气体，O 2气体和N 2气体的混合物作为成膜气体，通过溅射在衬底上形成SrTiO 3膜，即电介质膜。将SrTiO 3膜图案化成形成在底部电极上的电容器电介质膜。然后在电容器电介质膜上形成顶部电极。除了Ar / O 2气体之外，由于使用N 2气体作为成膜气体，所以可以在低温下形成具有高介电常数和小的泄漏的SrTiO 3膜。通过使用该SrTiO 3膜，可以获得具有高电容和良好介电特性的薄膜电容器。

7. 发明授权

US06577386B2 Method and apparatus for activating semiconductor impurities 失效
标题翻译：激活半导体杂质的方法和装置
公开(公告)号：US06577386B2
公开(公告)日：2003-06-10
申请号：US09852656
申请日：2001-05-11
申请人： Akihisa Yoshida , Masatoshi Kitagawa , Masao Uchida , Makoto Kitabatake , Tsuneo Mitsuyu
发明人： Akihisa Yoshida , Masatoshi Kitagawa , Masao Uchida , Makoto Kitabatake , Tsuneo Mitsuyu
IPC分类号： H01L21263
CPC分类号： H01L29/6606 , H01L21/046 , H01L29/1608 , H01L29/861 , Y10T29/41
摘要： An impurity doped SiC substrate 1 and SiC thin film 2 are irradiated with a laser light 5 having a wavelength longer than such a wavelength that a band edge absorption of a semiconductor is caused. The wavelength of the laser light 5 may be such a wavelength that an absorption is caused by a vibration by the bond of an impurity element and an element constituting the semiconductor, for example, a wavelength of 9 &mgr;m to 11 &mgr;m. Specifically, in the case where Al is doped in SiC, the wavelength of the laser light 5 may be within the range of 9.5 &mgr;m to 10 &mgr;m.
摘要翻译：用波长比发生半导体的带边缘吸收的波长的波长的激光5照射杂质掺杂的SiC衬底1和SiC薄膜2。激光5的波长可以是由杂质元素和构成半导体的元素的键合引起的吸收引起的波长，例如9μm〜11μm的波长。具体地，在Al中掺杂有Al的情况下，激光5的波长可以在9.5μm〜10μm的范围内。

8. 发明授权

US5336361A Method of manufacturing an MIS-type semiconductor device 失效
标题翻译：制造MIS型半导体器件的方法
公开(公告)号：US5336361A
公开(公告)日：1994-08-09
申请号：US970991
申请日：1992-11-02
申请人： Akiyoshi Tamura , Masatoshi Kitagawa
发明人： Akiyoshi Tamura , Masatoshi Kitagawa
IPC分类号： H01L29/78 , H01L21/28 , H01L21/316 , H01L21/318 , H01L21/338 , H01L29/812 , H01L21/02
CPC分类号： H01L21/0217 , H01L21/02247 , H01L21/02252 , H01L21/02274 , H01L21/02315 , H01L21/02337 , H01L21/28264 , H01L21/31608 , H01L21/318 , H01L21/3185
摘要： Disclosed is a method of manufacturing an MIS-type semiconductor device having a greatly reduced interface state density. In this method, before the formation of a gate insulating film, the surface of a GaAs substrate is treated with a plasma generated from a gas containing hydrogen and nitrogen or from a gas containing hydrogen and argon, so as to reduce the interface state density. An ECR plasma is used as the plasma, so that the damage caused by the plasma to the GaAs substrate is alleviated. After the surface treatment process, an healing process is performed, which sufficiently removes the damage. During the surface treatment process using the plasma generated from the gas containing hydrogen and nitrogen, a GaN gate insulating film is formed on the surface of the GaAs substrate. The surface treatment process using the plasma generated from the gas containing hydrogen and argon is followed by the process of forming a gate insulating film on the GaAs substrate; the two processes are successively performed within the same apparatus without exposing the GaAs substrate to ambient air.
摘要翻译：公开了一种制造具有大大降低的界面态密度的MIS型半导体器件的方法。在该方法中，在形成栅极绝缘膜之前，利用由含有氢和氮的气体或含有氢和氩的气体产生的等离子体处理GaAs衬底的表面，以便降低界面态密度。使用ECR等离子体作为等离子体，使得等离子体对GaAs衬底的损伤得到缓解。在表面处理过程之后，进行愈合过程，这充分消除了损伤。在使用由含有氢和氮的气体产生的等离子体的表面处理工艺中，在GaAs衬底的表面上形成GaN栅极绝缘膜。使用由含有氢气和氩气的气体产生的等离子体的表面处理工序之后，在GaAs衬底上形成栅极绝缘膜; 在相同的装置中连续进行两个处理，而不将GaAs衬底暴露在环境空气中。

9. 发明授权

US4800174A Method for producing an amorphous silicon semiconductor device using a multichamber PECVD apparatus 失效
标题翻译：使用多室PECVD装置制造非晶硅半导体器件的方法
公开(公告)号：US4800174A
公开(公告)日：1989-01-24
申请号：US50699
申请日：1987-05-18
申请人： Shinichiro Ishihara , Masatoshi Kitagawa , Takashi Hirao
发明人： Shinichiro Ishihara , Masatoshi Kitagawa , Takashi Hirao
IPC分类号： H01L21/205 , C23C16/24 , C23C16/54 , H01L31/04
CPC分类号： C23C16/54 , C23C16/24 , Y10S148/025 , Y10S148/045 , Y10S148/072 , Y10S438/908
摘要： A method of producing an amorphous silicon semiconductor device makes use of a capacitance-coupled high-frequency glow-discharge semiconductor production apparatus which is equipped with a plurality of glow-discharge chambers each having a high-frequency electrode and a substrate holder opposing each other and means for supplying material gases to the glow-discharge chambers. A reaction of a material gas is effected in a first glow-discharge chamber, so as to form a semiconductor layer having a first conductivity type on a substrate introduced into the first glow-discharge chamber, and, after moving the substrate into a second glow-discharge chamber, a reaction of a material gas different from the material gas used in the first glow-discharge chamber is effected, thereby forming a semiconductor layer having a second conductivity type on the semiconductor layer of the first conductivity type. The substrate with the semiconductor layer of the first conductivity formed thereon is moved from the first glow-discharge chamber to the second glow-discharge chamber after a predetermined gas atmosphere is formed in the first glow-discharge chamber. The distance between the electrode and the substrate holder is made smaller in one of the first and second glow-discharge chambers which is designed for forming the thicker one of the semiconductor layers of the first and second conductivity types than in the other of the first and second glow-discharge chambers. The temperature of the substrate is set higher in one of the first and second glow-discharge chambers which is designed for forming the thicker one of the semiconductor layers of the first and second conductivity types than in the other of the first and second glow-discharge chambers.
摘要翻译：一种非晶硅半导体器件的制造方法采用电容耦合高频辉光放电半导体制造装置，该装置配备有多个辉光放电室，每个辉光放电室具有彼此相对的高频电极和衬底保持器以及用于将材料气体供应到辉光放电室的装置。在第一辉光放电室中进行材料气体的反应，以便在引入第一辉光放电室的衬底上形成具有第一导电类型的半导体层，并且在将衬底移动到第二发光进行与第一辉光放电室中使用的材料气体不同的原料气体的反应，由此在第一导电型半导体层上形成具有第二导电类型的半导体层。在第一辉光放电室中形成规定的气体气氛之后，将形成有第一导电性的半导体层的基板从第一辉光放电室向第二辉光放电室移动。在第一和第二辉光放电室之一中，电极和衬底保持器之间的距离较小，被设计用于形成第一和第二导电类型的较厚的一个半导体层，而不是第一和第二导电类型中的另一个，第二个辉光放电室。第一和第二辉光放电室之一的衬底的温度被设定为高于在第一和第二辉光放电中的另一个中形成第一和第二导电类型的较厚的一个半导体层的第一和第二辉光放电室房间。

10. 发明授权

US07816869B2 Plasma display panel and manufacturing method for the same 失效
标题翻译：等离子显示面板及其制造方法相同
公开(公告)号：US07816869B2
公开(公告)日：2010-10-19
申请号：US12015310
申请日：2008-01-16
申请人： Yukihiro Morita , Masatoshi Kitagawa , Kiichiro Oishi , Mikihiko Nishitani
发明人： Yukihiro Morita , Masatoshi Kitagawa , Kiichiro Oishi , Mikihiko Nishitani
IPC分类号： H01J17/49
CPC分类号： H01J11/40 , H01J9/02 , H01J11/12
摘要： A plasma display panel in which a first substrate having a protective layer formed thereon opposes a second substrate across a discharge space, with the substrates being sealed around a perimeter thereof. At a surface of the protective layer, first and second materials of different electron emission properties are exposed to the discharge space, with at least one of the materials existing in a dispersed state. The first and second materials may be first and second crystals, and the second crystal may be dispersed throughout the first crystal.
摘要翻译：一种等离子体显示面板，其中形成有保护层的第一基板横跨放电空间与第二基板相对，基板围绕其周边被密封。在保护层的表面上，具有不同电子发射特性的第一和第二材料暴露于放电空间，其中至少一种材料以分散状态存在。第一和第二材料可以是第一和第二晶体，并且第二晶体可以分散在整个第一晶体中。

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