专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5672252A Method and apparatus for fabrication of dielectric film 失效
标题翻译：电介质膜的制造方法和装置
公开(公告)号：US5672252A
公开(公告)日：1997-09-30
申请号：US483835
申请日：1995-06-15
申请人： Shigenori Hayashi , Kazuki Komaki , Takeshi Kamada , Masatoshi Kitagawa , Takashi Deguchi , Ryoichi Takayama , Takashi Hirao
发明人： Shigenori Hayashi , Kazuki Komaki , Takeshi Kamada , Masatoshi Kitagawa , Takashi Deguchi , Ryoichi Takayama , Takashi Hirao
IPC分类号： C23C14/00 , C23C14/08 , C23C14/58 , G02F1/00 , H01L21/314 , H01L21/316 , H01L37/02 , H01L41/316 , C23C14/34
CPC分类号： C23C14/5853 , C23C14/0078 , C23C14/088 , H01L21/02197 , H01L21/02266 , H01L21/314 , H01L21/31691 , H01L37/025 , H01L41/1875 , H01L41/316 , G02F1/0027
摘要： A method whereby perovskite type oxide dielectric thin films with ABO.sub.3 structure are able to be formed with such features as good stability, uniformity, reproducibility, or the like, with high through-put by having a deposition process, wherein the thin films are deposited on a substrate, and a stabilization process, where no deposition of the thin films takes place, repeated alternatingly while the substrate temperature being kept near the temperature at which perovskite type oxide dielectric thin films are formed. Also, by employing (i) a processing method wherein a decomposing excitation of a reactive gas due to plasma takes place on or near the deposition surface in a gaseous atmosphere comprising a gas that reacts with the elements composing the thin films, (ii) a processing method wherein an oxidation reaction takes place on the deposition surface in a gaseous atmosphere comprising at least ozone (O.sub.3), and (iii) a processing method wherein light of short wave length is irradiated on the deposition surface in a gaseous atmosphere comprising at least reactive elements in the non-deposition process, the oxygen concentration in the deposited thin films is adjusted and dielectric thin films of good quality and an extremely low defect content are realized.
摘要翻译：具有ABO3结构的钙钛矿型氧化物电介质薄膜能够通过具有沉积工艺的高通量形成具有良好的稳定性，均匀性，再现性等特性的方法，其中薄膜沉积在基板和稳定化处理，其中不存在薄膜的沉积，在衬底温度保持接近形成钙钛矿型氧化物电介质薄膜的温度的同时交替重复。此外，通过采用以下处理方法：（i）在包含与组成薄膜的元素反应的气体的气体气氛中，在等离子体发生的反应性气体的分解激发发生在沉积表面上或其附近的处理方法，（ii）处理方法，其中在至少包含臭氧（O 3）的气体气氛中在沉积表面上发生氧化反应，和（iii）其中在至少包括至少包含臭氧（O 3）的气体气氛中在沉积表面上照射短波长的光的处理方法在非沉积工艺中的非活性元素，沉积的薄膜中的氧浓度被调节，并且实现了良好质量和极低缺陷含量的介电薄膜。

2. 发明授权

US5674366A Method and apparatus for fabrication of dielectric thin film 失效
标题翻译：电介质薄膜的制造方法和装置
公开(公告)号：US5674366A
公开(公告)日：1997-10-07
申请号：US483873
申请日：1995-06-07
申请人： Shigenori Hayashi , Kazuki Komaki , Takeshi Kamada , Masatoshi Kitagawa , Takashi Deguchi , Ryoichi Takayama , Takashi Hirao
发明人： Shigenori Hayashi , Kazuki Komaki , Takeshi Kamada , Masatoshi Kitagawa , Takashi Deguchi , Ryoichi Takayama , Takashi Hirao
IPC分类号： C23C14/00 , C23C14/08 , C23C14/58 , G02F1/00 , H01L21/314 , H01L21/316 , H01L37/02 , H01L41/316 , C23C14/34
CPC分类号： C23C14/5853 , C23C14/0078 , C23C14/088 , H01L21/02197 , H01L21/02266 , H01L21/314 , H01L21/31691 , H01L37/025 , H01L41/1875 , H01L41/316 , G02F1/0027
摘要： A method whereby perovskite type oxide dielectric thin films with ABO.sub.3 structure are able to be formed with such features as good stability, uniformity, reproducibility, or the like, with high through-put by having a deposition process, wherein the thin films are deposited on a substrate, and a stabilization process, where no deposition of the thin films takes place, repeated alternatingly while the substrate temperature being kept near the temperature at which perovskite type oxide dielectric thin films are formed. Also, by employing (i) a processing method wherein a decomposing excitation of a reactive gas due to plasma takes place on or near the deposition surface in a gaseous atmosphere comprising a gas that reacts with the elements composing the thin films, (ii) a processing method wherein an oxidation reaction takes place on the deposition surface in a gaseous atmosphere comprising at least ozone (O.sub.3), and (iii) a processing method wherein light of short wave length is irradiated on the deposition surface in a gaseous atmosphere comprising at least reactive elements in the non-deposition process, the oxygen concentration in the deposited thin films is adjusted and dielectric thin films of good quality and an extremely low defect content are realized.
摘要翻译：具有ABO3结构的钙钛矿型氧化物电介质薄膜能够通过具有沉积工艺的高通量形成具有良好的稳定性，均匀性，再现性等特性的方法，其中薄膜沉积在基板和稳定化处理，其中不存在薄膜的沉积，在衬底温度保持接近形成钙钛矿型氧化物电介质薄膜的温度的同时交替重复。此外，通过采用以下处理方法：（i）在包含与组成薄膜的元素反应的气体的气体气氛中，在等离子体发生的反应性气体的分解激发发生在沉积表面上或其附近的处理方法，（ii）处理方法，其中在至少包含臭氧（O 3）的气体气氛中在沉积表面上发生氧化反应，和（iii）其中在至少包括至少包含臭氧（O 3）的气体气氛中在沉积表面上照射短波长的光的处理方法在非沉积工艺中的非活性元素，沉积的薄膜中的氧浓度被调节，并且实现了良好质量和极低缺陷含量的介电薄膜。

3. 发明授权

US6105225A Method of manufacturing a thin film sensor element 失效
标题翻译：制造薄膜传感器元件的方法
公开(公告)号：US6105225A
公开(公告)日：2000-08-22
申请号：US600863
申请日：1996-02-09
申请人： Hideo Torii , Takeshi Kamada , Shigenori Hayashi , Ryoichi Takayama , Takashi Hirao , Masumi Hattori
发明人： Hideo Torii , Takeshi Kamada , Shigenori Hayashi , Ryoichi Takayama , Takashi Hirao , Masumi Hattori
IPC分类号： G01P15/08 , G01P15/09 , H01L41/29 , H01L41/22
CPC分类号： G01P15/0922 , G01P15/0802 , H01L41/0478 , H01L41/0815 , H01L41/313 , Y10T29/42 , Y10T29/4981
摘要： A method of manufacturing a small, light, highly accurate and inexpensive thin film sensor element is disclosed. The thin film sensor element comprises a sensor holding substrate having an opening part and a multilayer film structure adhered thereon. The multilayer film structure comprises a first electrode film, a second electrode film, and a piezoelectric dielectric oxide film present between the first and second electrode films. The method of manufacturing the thin film sensor element comprises the steps of: forming the multilayer film structure by forming the first electrode film having a (100) plane orientation on a surface of an alkali halide substrate, forming the piezoelectric dielectric oxide thereon, and forming the second electrode film on the piezoelectric dielectric oxide; adhering the multilayer film structure on the surface of the sensor holding substrate having the opening part; and dissolving and removing the alkali halide substrate with water.
摘要翻译：公开了一种制造小型，轻型，高精度和廉价的薄膜传感器元件的方法。薄膜传感器元件包括具有开口部分和粘附在其上的多层膜结构的传感器保持基板。多层膜结构包括第一电极膜，第二电极膜和存在于第一和第二电极膜之间的压电电介质氧化物膜。制造薄膜传感器元件的方法包括以下步骤：通过在碱金属卤化物衬底的表面上形成具有（100）面取向的第一电极膜来形成多层膜结构，在其上形成压电电介质氧化物，并形成压电电介质氧化物上的第二电极膜; 将多层膜结构粘附在具有开口部的传感器保持基板的表面上; 并用水溶解和除去碱金属卤化物基质。

4. 发明授权

US5612536A Thin film sensor element and method of manufacturing the same 失效
标题翻译：薄膜传感器元件及其制造方法
公开(公告)号：US5612536A
公开(公告)日：1997-03-18
申请号：US374989
申请日：1995-01-19
申请人： Hideo Torii , Takeshi Kamada , Shigenori Hayashi , Ryoichi Takayama , Takashi Hirao , Masumi Hattori
发明人： Hideo Torii , Takeshi Kamada , Shigenori Hayashi , Ryoichi Takayama , Takashi Hirao , Masumi Hattori
IPC分类号： G01P15/08 , G01P15/09 , H01L41/29 , G01J5/10
CPC分类号： G01P15/0922 , G01P15/0802 , H01L41/0478 , H01L41/0815 , H01L41/313 , Y10T29/42 , Y10T29/4981
摘要： A thin film sensor element includes a sensor holding substrate having an opening part and a multilayer film adhered thereon at least consisting of an electrode film A, an electrode film B having (100) plane orientation, and a piezoelectic dielectric oxide film present between the electrode film A and the electrode film B. As a result, a thin film sensor element which is small, light, highly accurate, and inexpensive can be attained which can be used for an acceleration sensor element and a pyroelectric infrared sensor element. On the surface of a flat plate KBr substrate, a rock-salt crystal structure oxide of a conductive NiO is formed by a plasma MOCVD method whose vertical direction is crystal-oriented to direction against the substrate surface. By means of a sputtering method, a PZT film is formed by an epitaxial growth on that surface, and a Ni-Cr electrode film is formed thereon. Next, the multilayer film structure is reversed and adhered to a sensor substrate having an opening part with an adhesive. After a connection electrode is connected, the whole structure is washed with water, thereby removing the KBr substrate.
摘要翻译：薄膜传感器元件包括：具有开口部的传感器保持基板和附着在其上的多层膜，至少由电极膜A，具有（100）面取向的电极膜B和存在于电极之间的压电电介质氧化膜膜A和电极膜B.结果，可以获得可用于加速度传感器元件和热电型红外线传感器元件的小，轻，高精度和便宜的薄膜传感器元件。在平板KBr基板的表面上，通过等离子体MOCVD方法形成导电NiO的岩盐晶体结构氧化物，其垂直方向相对于衬底表面<100>晶体取向。通过溅射法，在该表面上通过外延生长形成PZT膜，在其上形成Ni-Cr电极膜。接下来，将多层膜结构反转并粘接到具有开口部的粘合剂的传感器基板。连接电极连接后，整个结构用水清洗，从而除去KBr基板。

5. 发明授权

US5470398A Dielectric thin film and method of manufacturing same 失效
标题翻译：介电薄膜及其制造方法
公开(公告)号：US5470398A
公开(公告)日：1995-11-28
申请号：US763674
申请日：1991-09-23
申请人： Munehiro Shibuya , Masatoshi Kitagawa , Takeshi Kamada , Takashi Hirao
发明人： Munehiro Shibuya , Masatoshi Kitagawa , Takeshi Kamada , Takashi Hirao
IPC分类号： C23C16/40 , H01L21/02 , H01L21/312
CPC分类号： H01L28/40 , C23C16/401
摘要： A dielectric film is provided which may be used as an insulating layer of a capacitor of a semiconductor DRAM. The dielectric film is comprised of three elements, namely, titanium, silicon and oxygen. The dielectric film has a high dielectric constant and a small leakage current. The film is manufactured from the raw materials of titanium chloride and silicon hydride, and at least one of O.sub.2, N.sub.2 O, and a mixture of O.sub.2 and N.sub.2 O by plasma-decomposing the raw materials with the application of a strong electric field.
摘要翻译：提供了可以用作半导体DRAM的电容器的绝缘层的电介质膜。电介质膜由三种元素组成，即钛，硅和氧。电介质膜具有高的介电常数和较小的漏电流。该薄膜由氯化钛和氢化硅的原料以及O 2，N 2 O以及O 2和N 2 O的混合物中的至少一种制成，通过施加强电场等离子体分解原料。

6. 发明授权

US5431733A Low vapor-pressure material feeding apparatus 失效
标题翻译：低气压材料送料装置
公开(公告)号：US5431733A
公开(公告)日：1995-07-11
申请号：US83300
申请日：1993-06-29
申请人： Munehiro Shibuya , Masatoshi Kitagawa , Takeshi Kamada , Takashi Hirao
发明人： Munehiro Shibuya , Masatoshi Kitagawa , Takeshi Kamada , Takashi Hirao
IPC分类号： C23C16/44 , C23C16/448 , C23C16/455 , C23C16/52 , C23C16/00
CPC分类号： C23C16/4482
摘要： A low vapor-pressure material feeding apparatus comprises a bubbler (4, 5), accommodating a low vapor-pressure material (6) therein, for bubbling the low vapor-pressure material (6) with an inert gas fed from an inert gas container (3). A bifurcated gas feeding passage (51, 8) is provided between the gas container (3) and a vacuum chamber (50). One branch passage directly introduces an inert gas into the vacuum chamber (50), and the other branch passage introduces an inert gas into the bubbler (4, 5). A gas mixture of a vaporized low vapor-pressure material (6) and the inert gas, is supplied from the bubbler (4, 5) to a vacuum chamber (50). A gas flow meter (7) detects a flow amount of the gas mixture. On a basis of a gas flow amount detected by the gas flow meter (7), an inert gas controller (10) adjusts a feeding amount of inert gas so that a total amount of an inert gas introduced directly into said vacuum chamber (50) and an inert gas introduced into the bubbler (4, 5) is kept at a constant value.
摘要翻译：低蒸气压材料输送装置包括一个容纳低蒸气压材料（6）的起泡器（4,5），用于使惰性气体从惰性气体容器（3）。在气体容器（3）和真空室（50）之间设置有分支气体供给通路（51,8）。一个分支通道直接将惰性气体引入真空室（50），另一个分支通道将惰性气体引入起泡器（4,5）中。蒸发的低蒸气压材料（6）和惰性气体的气体混合物从起泡器（4,5）供应到真空室（50）。气体流量计（7）检测气体混合物的流量。基于由气体流量计（7）检测到的气体流量，惰性气体控制器（10）调节惰性气体的供给量，使得直接引入所述真空室（50）的惰性气体的总量，引入起泡器（4,5）中的惰性气体保持恒定值。

7. 发明授权

US5203925A Apparatus for producing a thin film of tantalum oxide 失效
标题翻译：用于生产氧化钽薄膜的设备
公开(公告)号：US5203925A
公开(公告)日：1993-04-20
申请号：US901555
申请日：1992-06-19
申请人： Munehiro Shibuya , Masatoshi Kitagawa , Takeshi Kamada , Takashi Hirao , Hiroshi Nishizato
发明人： Munehiro Shibuya , Masatoshi Kitagawa , Takeshi Kamada , Takashi Hirao , Hiroshi Nishizato
IPC分类号： C23C16/40 , C23C16/448
CPC分类号： C23C16/405 , C23C16/4481
摘要： An apparatus for producing a thin film of tantalum oxide comprising a vacuum chamber with a heater, an ampule of an organic tantalum compound, a container of a carrier gas, a container of an oxygen-containing gas, and a three way valve having a liquid inlet, a gas inlet and an outlet, the liquid inlet being connected with the ampule via a liquid flow controller, the gas inlet being connected with the containers of gas, the outlet being connected with the vacuum chamber, whereby the tantalum compound vaporized at the three way valve can obtain constant supply by the flow controller regardless of the ambient temperature, resulting in the tantalum oxide film of uniform quality.
摘要翻译：一种氧化钽薄膜的制造装置，包括具有加热器的真空室，有机钽化合物的安瓿，载气的容器，含氧气体的容器，以及具有液体的三通阀入口，气体入口和出口，液体入口通过液体流量控制器与安瓿连接，气体入口与气体容器连接，出口与真空室连接，由此钽化合物在三通阀可以通过流量控制器获得恒定的供应，不管环境温度如何，导致氧化钽膜质量均匀。

8. 发明授权

US5507080A Method of manufacturing a capacitance sensor 失效
标题翻译：制造电容式传感器的方法
公开(公告)号：US5507080A
公开(公告)日：1996-04-16
申请号：US353315
申请日：1994-12-05
申请人： Shigenori Hayashi , Takeshi Kamada , Hideo Torii , Takashi Hirao
发明人： Shigenori Hayashi , Takeshi Kamada , Hideo Torii , Takashi Hirao
IPC分类号： G01D5/241 , G01L9/00 , G01P15/125 , H01G5/16
CPC分类号： G01L9/0072 , G01D5/2417 , G01P15/125 , Y10T29/43
摘要： A small and highly sensitive capacitance type pressure sensor is obtained by filling an alkali halide material such as KBr into a through-hole, forming a conductive thin film on the surface, and dissolving and removing the alkali halide material. An insulating plate disposed with a through-hole in the thickness direction is filled with a molten alkali halide material such as KBr. After forming a conductive thin film on the surface of the alkali halide material filled into the through-hole and the vicinity thereof, the alkali halide material is dissolved by water and removed. In this way, a diaphragm is made of the through-hole and the conductive thin film. A curve of the diaphragm caused by a pressure difference between the both faces of the conductive thin film is detected as a capacitance change between the conductive thin film and the electrode layer.
摘要翻译：通过将诸如KBr的碱金属卤化物材料填充到通孔中，在表面上形成导电薄膜，并溶解和除去碱金属卤化物材料，获得小而高灵敏度的电容式压力传感器。在厚度方向上设置有通孔的绝缘板填充有诸如KBr的熔融卤化碱材料。在填充到通孔及其附近的碱金属卤化物材料的表面上形成导电薄膜之后，碱金属卤化物材料被水溶解并除去。以这种方式，隔膜由通孔和导电薄膜制成。由导电薄膜的两面之间的压力差引起的隔膜的曲线被检测为导电薄膜和电极层之间的电容变化。

9. 发明授权

US5719740A Capacitance sensor 失效
标题翻译：电容传感器
公开(公告)号：US5719740A
公开(公告)日：1998-02-17
申请号：US595240
申请日：1996-02-01
申请人： Shigenori Hayashi , Takeshi Kamada , Hideo Torii , Takashi Hirao
发明人： Shigenori Hayashi , Takeshi Kamada , Hideo Torii , Takashi Hirao
IPC分类号： G01D5/241 , G01L9/00 , G01P15/125 , H01G7/00 , G01L9/12
CPC分类号： G01L9/0072 , G01D5/2417 , G01P15/125 , Y10T29/43
摘要： A small and highly sensitive capacitance type pressure sensor is obtained by filling an alkali halide material such as KBr into a through-hole, forming a conductive thin film on the surface, and dissolving and removing the alkali halide material. An insulating plate disposed with a through-hole in the thickness direction is filled with a molten alkali halide material such as KBr. After forming a conductive thin film on the surface of the alkali halide material filled into the through-hole and the vicinity thereof, the alkali halide material is dissolved by water and removed. In this way, a diaphragm is made of the through-hole and the conductive thin film. A curve of the diaphragm caused by a pressure difference between the both faces of the conductive thin film is detected as a capacitance change between the conductive thin film and the electrode layer.
摘要翻译：通过将诸如KBr的碱金属卤化物材料填充到通孔中，在表面上形成导电薄膜，并溶解和除去碱金属卤化物材料，获得小而高灵敏度的电容式压力传感器。在厚度方向上设置有通孔的绝缘板填充有诸如KBr的熔融卤化碱材料。在填充到通孔及其附近的碱金属卤化物材料的表面上形成导电薄膜之后，碱金属卤化物材料被水溶解并除去。以这种方式，隔膜由通孔和导电薄膜制成。由导电薄膜的两面之间的压力差引起的隔膜的曲线被检测为导电薄膜和电极层之间的电容变化。

10. 发明授权

US4800174A Method for producing an amorphous silicon semiconductor device using a multichamber PECVD apparatus 失效
标题翻译：使用多室PECVD装置制造非晶硅半导体器件的方法
公开(公告)号：US4800174A
公开(公告)日：1989-01-24
申请号：US50699
申请日：1987-05-18
申请人： Shinichiro Ishihara , Masatoshi Kitagawa , Takashi Hirao
发明人： Shinichiro Ishihara , Masatoshi Kitagawa , Takashi Hirao
IPC分类号： H01L21/205 , C23C16/24 , C23C16/54 , H01L31/04
CPC分类号： C23C16/54 , C23C16/24 , Y10S148/025 , Y10S148/045 , Y10S148/072 , Y10S438/908
摘要： A method of producing an amorphous silicon semiconductor device makes use of a capacitance-coupled high-frequency glow-discharge semiconductor production apparatus which is equipped with a plurality of glow-discharge chambers each having a high-frequency electrode and a substrate holder opposing each other and means for supplying material gases to the glow-discharge chambers. A reaction of a material gas is effected in a first glow-discharge chamber, so as to form a semiconductor layer having a first conductivity type on a substrate introduced into the first glow-discharge chamber, and, after moving the substrate into a second glow-discharge chamber, a reaction of a material gas different from the material gas used in the first glow-discharge chamber is effected, thereby forming a semiconductor layer having a second conductivity type on the semiconductor layer of the first conductivity type. The substrate with the semiconductor layer of the first conductivity formed thereon is moved from the first glow-discharge chamber to the second glow-discharge chamber after a predetermined gas atmosphere is formed in the first glow-discharge chamber. The distance between the electrode and the substrate holder is made smaller in one of the first and second glow-discharge chambers which is designed for forming the thicker one of the semiconductor layers of the first and second conductivity types than in the other of the first and second glow-discharge chambers. The temperature of the substrate is set higher in one of the first and second glow-discharge chambers which is designed for forming the thicker one of the semiconductor layers of the first and second conductivity types than in the other of the first and second glow-discharge chambers.
摘要翻译：一种非晶硅半导体器件的制造方法采用电容耦合高频辉光放电半导体制造装置，该装置配备有多个辉光放电室，每个辉光放电室具有彼此相对的高频电极和衬底保持器以及用于将材料气体供应到辉光放电室的装置。在第一辉光放电室中进行材料气体的反应，以便在引入第一辉光放电室的衬底上形成具有第一导电类型的半导体层，并且在将衬底移动到第二发光进行与第一辉光放电室中使用的材料气体不同的原料气体的反应，由此在第一导电型半导体层上形成具有第二导电类型的半导体层。在第一辉光放电室中形成规定的气体气氛之后，将形成有第一导电性的半导体层的基板从第一辉光放电室向第二辉光放电室移动。在第一和第二辉光放电室之一中，电极和衬底保持器之间的距离较小，被设计用于形成第一和第二导电类型的较厚的一个半导体层，而不是第一和第二导电类型中的另一个，第二个辉光放电室。第一和第二辉光放电室之一的衬底的温度被设定为高于在第一和第二辉光放电中的另一个中形成第一和第二导电类型的较厚的一个半导体层的第一和第二辉光放电室房间。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式