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    • 3. 发明授权
    • Method for fabricating a thermally stable diamond-like carbon film as an intralevel or interlevel dielectric in a semiconductor device and device made
    • 在半导体器件和器件中制造作为层间或层间电介质的热稳定的类金刚石碳膜的方法
    • US06346747B1
    • 2002-02-12
    • US09329004
    • 1999-06-09
    • Alfred GrillChristopher Vincent JahnesVishnubhai Vitthalbhai Patel
    • Alfred GrillChristopher Vincent JahnesVishnubhai Vitthalbhai Patel
    • H01L2348
    • C23C16/5096C23C16/26C23C16/56H01L21/3146Y10S427/103Y10S427/104
    • A method for fabricating a thermally stable carbon-based low dielectric constant film such as a hydrogenated amorphous carbon film or a diamond-like carbon film in a parallel plate chemical vapor deposition process utilizing plasma enhanced chemical vapor deposition process is disclosed. Electronic devices containing insulating layers of thermally stable carbon-based low dielectric constant materials that are prepared by the method are further disclosed. In order to render the carbon-based low dielectric constant film thermally stable, i.e., at a temperature of at least 400° C., the films are heat treated at a temperature of not less than 350° C. for at least 0.5 hour. To enable the fabrication of thermally stable carbon-based low dielectric constant film, specific precursor materials such as cyclic hydrocarbons should be used, for instance, cyclohexane or benzene. The geometry of the chemical vapor deposition chamber is important in making the present invention thermally stable low dielectric constant films in order to achieve a specific bias voltage on the substrate onto which the electronic structure is formed.
    • 公开了一种利用等离子体增强化学气相沉积工艺在平行板化学气相沉积工艺中制造热稳定性碳基低介电常数膜的方法,例如氢化无定形碳膜或类金刚石碳膜。 还公开了通过该方法制备的含有热稳定性碳基低介电常数材料绝缘层的电子器件。 为了使碳基低介电常数膜热稳定,即在至少400℃的温度下,将膜在不低于350℃的温度下热处理至少0.5小时。 为了制造热稳定性的碳系低介电常数膜,可以使用环状烃等环状烃等特定的前体材料。 化学气相沉积室的几何形状对于使本发明热稳定的低介电常数膜是重要的,以便在其上形成电子结构的基板上实现特定的偏置电压。