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21. 发明授权

US5883017A Compartmentalized substrate processing chamber 失效
标题翻译：隔板基板处理室
公开(公告)号：US5883017A
公开(公告)日：1999-03-16
申请号：US916161
申请日：1997-09-02
申请人： Avi Tepman , Gerald Zheyao Yin , Donald Olgado
发明人： Avi Tepman , Gerald Zheyao Yin , Donald Olgado
IPC分类号： H01L21/302 , B65G49/07 , H01L21/00 , H01L21/02 , H01L21/20 , H01L21/306 , H01L21/677
CPC分类号： H01L21/67748 , H01L21/6719 , H01L21/67196 , H01L21/67751 , Y10S414/135 , Y10S414/139 , Y10S438/905 , Y10S438/907 , Y10S438/908
摘要： A process chamber for semiconductor wafers is formed of multiple compartments. A first compartment is provided for supplying an isolated environment for processing the wafers, and a second compartment is provided, in selective communication with the first compartment, to load and unload wafers from the chamber. The wafer handling equipment is located in the second compartment to isolate it from the process environment, and thus form a clean, non-contaminating, environment for the wafer handling equipment. When the chamber must be cleaned, only the first compartment must be cleaned, as no processing occurs in the second chamber. Therefore, the entire first chamber may be removed for cleaning, and replaced with a clean first compartment to decrease chamber turnaround time during chamber cleaning operations.
摘要翻译：用于半导体晶片的处理室由多个隔室形成。提供第一隔室以提供用于处理晶片的隔离环境，并且提供与第一隔室选择性连通的第二隔室，用于从腔室加载和卸载晶片。晶片处理设备位于第二隔室中以将其与工艺环境隔离，并因此形成用于晶片处理设备的干净，无污染的环境。当房间必须清洁时，只有第一个隔间必须被清洁，因为在第二个室中没有处理。因此，可以将整个第一腔室移除以进行清洁，并且用清洁的第一隔室替换以减少室清洁操作期间的室周转时间。

22. 发明授权

US5730801A Compartnetalized substrate processing chamber 失效
标题翻译：基板处理室
公开(公告)号：US5730801A
公开(公告)日：1998-03-24
申请号：US296043
申请日：1994-08-23
申请人： Avi Tepman , Gerald Zheyao Yin , Donald Olgado
发明人： Avi Tepman , Gerald Zheyao Yin , Donald Olgado
IPC分类号： H01L21/302 , B65G49/07 , H01L21/00 , H01L21/02 , H01L21/20 , H01L21/306 , H01L21/677 , C23C16/00
CPC分类号： H01L21/67748 , H01L21/6719 , H01L21/67196 , H01L21/67751 , Y10S414/135 , Y10S414/139 , Y10S438/905 , Y10S438/907 , Y10S438/908
摘要： A process chamber for semiconductor wafers is formed of multiple compartments. A first compartment is provided for supplying an isolated environment for processing the wafers, and a second compartment is provided, in selective communication with the first compartment, to load and unload wafers from the chamber. The wafer handling equipment is located in the second compartment to isolate it from the process environment, and thus form a clean, non-contaminating, environment for the wafer handling equipment. When the chamber must be cleaned, only the first compartment must be cleaned, as no processing occurs in the second chamber. Therefore, the entire first chamber may be removed for cleaning, and replaced with a clean first compartment to decrease chamber turnaround time during chamber cleaning operations.
摘要翻译：用于半导体晶片的处理室由多个隔室形成。提供第一隔室以提供用于处理晶片的隔离环境，并且提供与第一隔室选择性连通的第二隔室，用于从腔室加载和卸载晶片。晶片处理设备位于第二隔室中以将其与工艺环境隔离，并因此形成用于晶片处理设备的干净，无污染的环境。当房间必须清洁时，只有第一个隔间必须被清洁，因为在第二个室中没有处理。因此，可以将整个第一腔室移除以进行清洁，并且用清洁的第一隔室替换以减少室清洁操作期间的室周转时间。

23. 发明授权

US5643394A Gas injection slit nozzle for a plasma process reactor 失效
标题翻译：用于等离子体处理反应器的气体注入狭缝喷嘴
公开(公告)号：US5643394A
公开(公告)日：1997-07-01
申请号：US307888
申请日：1994-09-16
申请人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , Brian Shieh , James S. Papanu
发明人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , Brian Shieh , James S. Papanu
IPC分类号： H05H1/46 , C23C16/44 , C23C16/455 , C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H05H1/00
CPC分类号： C23C16/45574 , C23C16/45576 , C23C16/45587 , H01J37/3244 , H01J37/32449
摘要： The invention is embodied in a gas injection apparatus for injecting gases into a plasma reactor vacuum chamber having a chamber housing, a pedestal holding a workpiece to be processed, means for applying RF energy into the chamber, the gas injection apparatus having a gas supply containing an etchant species in a gas, an opening in the chamber housing, a gas feed line from the supply to the opening in the chamber housing, and gas distribution apparatus near the opening in the chamber housing, the gas feed apparatus having at least one slit nozzle facing the interior of the chamber. In a preferred embodiment, the gas distribution apparatus includes a disk member surrounded by at least one annular member with a gap therebetween comprising the slit nozzle, the disk member and annular member blocking gas flow through the opening in the chamber housing. Preferably, each of the members of the gas distribution apparatus comprises a material at least nearly impervious to attack from the etchant species. In one example, each of the members of the gas distribution apparatus comprises one of ceramic, quartz, sapphire, polyimide or anodized aluminum and the gas feed line comprises stainless steel. Preferably, each of the members has its surface polished prior to assembly of the gas distribution apparatus.
摘要翻译：本发明体现在一种用于将气体注入等离子体反应器真空室的气体注入装置，其具有腔室壳体，保持要加工的工件的基座，用于将RF能量施加到腔室中的装置，该气体注入装置具有含有气体中的蚀刻剂物质，腔室壳体中的开口，从供体到腔室中的开口的气体供给管线以及靠近腔室壳体中的开口的气体分配装置，气体供给装置具有至少一个狭缝喷嘴面向腔室的内部。在优选实施例中，气体分配装置包括由至少一个环形构件包围的盘构件，其间具有间隙，包括狭缝喷嘴，盘构件和环形构件阻挡气体流过腔室中的开口。优选地，气体分配装置的每个构件包括至少几乎不受蚀刻剂物质侵蚀的材料。在一个示例中，气体分配装置的每个构件包括陶瓷，石英，蓝宝石，聚酰亚胺或阳极氧化铝之一，气体供给管线包括不锈钢。优选地，每个构件在气体分配装置的组装之前具有其表面抛光。

24. 发明授权

US5540824A Plasma reactor with multi-section RF coil and isolated conducting lid 失效
标题翻译：具有多段RF线圈和隔离导电盖的等离子体反应器
公开(公告)号：US5540824A
公开(公告)日：1996-07-30
申请号：US277531
申请日：1994-07-18
申请人： Gerald Z. Yin , Hiroji Hanawa , Diana X. Ma , Donald Olgado
发明人： Gerald Z. Yin , Hiroji Hanawa , Diana X. Ma , Donald Olgado
IPC分类号： H05H1/46 , C23F4/00 , H01J37/32 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065 , C23F1/00 , C23C14/34 , C23C16/00
CPC分类号： H01J37/32458 , H01J37/321
摘要： Capacitive coupling and RF power dissipation is advantageously reduced in the present invention by employing an RF coil having plural coil sections, each coil section connected across an RF source, commonly tapped ones of the coil sections being wound in opposite directions. Capacitive coupling and RF power dissipation is further reduced by employing a top lid having an outer insulating annulus and an inner conducting disk portion, the conducting disk portion being displaced or spaced apart from the coil by the width of the annulus. This displacement significantly reduces the RF power dissipation or coupling from the top winding of the coil to the lid. Furthermore, the plural coil sections or mirror coil configuration reduces sputtering of insulative material induced by capacitive RF coupling.
摘要翻译：通过采用具有多个线圈部分的RF线圈，每个线圈部分连接在RF源上，通常在线圈部分中的一些线圈部分沿相反的方向缠绕，从而有利地减少了电容耦合和RF功率消耗。通过采用具有外绝缘环和内导电盘部分的顶盖进一步减小电容耦合和RF功率耗散，导电盘部分与线圈移位或间隔开环形宽度。这种位移显着降低了RF功率消耗或从线圈的顶部绕组到盖子的耦合。此外，多个线圈部分或镜面线圈构造减少了由电容RF耦合引起的绝缘材料的溅射。

25. 发明申请

US20110274850A1 HYDROTHERMAL SYNTHESIS OF ACTIVE MATERIALS AND IN SITU SPRAYING DEPOSITION FOR LITHIUM ION BATTERY 有权
标题翻译：活性材料的氢热合成和锂离子电池的喷涂沉积
公开(公告)号：US20110274850A1
公开(公告)日：2011-11-10
申请号：US13098924
申请日：2011-05-02
申请人： Lu Yang , Hooman Bolandi , Karl Brown , Victor Pebenito , Donald Olgado
发明人： Lu Yang , Hooman Bolandi , Karl Brown , Victor Pebenito , Donald Olgado
IPC分类号： C23C16/513 , C23C4/10 , C23C16/505 , C23C4/12 , C23C16/511 , C23C16/503
CPC分类号： C23C4/121 , C23C4/123 , C23C26/02 , H01M4/0419 , H01M4/0421 , H01M4/139 , H01M4/625 , Y02E60/122 , Y02P70/54
摘要： A method and apparatus for forming an electrochemical layer of a lithium ion battery is provided. A precursor mixture in a carrying medium is activated in a reactor chamber by application of energy to synthesize active materials. The activated precursor mixture is then spray deposited on a substrate. A binder and conductive materials may be blended, or sprayed separately, with the nano- or micro-crystals as they deposit on the surface to enhance adhesion and conductivity.
摘要翻译：提供了一种用于形成锂离子电池的电化学层的方法和装置。携带介质中的前体混合物通过施加能量在反应器室中活化以合成活性材料。然后将活化的前体混合物喷雾沉积在基底上。当粘合剂和导电材料沉积在表面上时，粘合剂和导电材料可以与纳米或微晶分别共混或喷涂，以增强粘合性和导电性。

26. 发明申请

US20110232569A1 SEGMENTED SUBSTRATE LOADING FOR MULTIPLE SUBSTRATE PROCESSING 审中-公开
标题翻译：用于多个基板加工的分段基板加载
公开(公告)号：US20110232569A1
公开(公告)日：2011-09-29
申请号：US13052725
申请日：2011-03-21
申请人： DONALD OLGADO
发明人： DONALD OLGADO
IPC分类号： H01L21/677 , C23C16/458 , C23C16/44 , H01L21/68 , H01L21/687
CPC分类号： H01L21/67742 , C23C16/54 , H01L21/67184 , H01L21/6719 , H01L21/68 , H01L21/68742 , H01L21/68771
摘要： Embodiments of the present invention provide apparatus and methods for loading and unloading a multiple-substrate processing chamber segment by segment. One embodiment of the present invention provides an apparatus for processing multiple substrates. The apparatus includes a substrate supporting tray having a plurality of substrate pockets forming a plurality of segments, and a substrate handling assembly configured to pick up and drop off substrates from and to a segment of substrate pockets of the substrate supporting tray.
摘要翻译：本发明的实施例提供了用于逐段加载和卸载多基板处理室的装置和方法。本发明的一个实施例提供了一种用于处理多个基板的装置。该设备包括具有形成多个段的多个衬底袋的衬底支撑托盘以及被配置为从衬底支撑托盘的衬底袋的一部分拾取和移出衬底的衬底处理组件。

27. 发明申请

US20080045012A1 ELECTROPROCESSING PROFILE CONTROL 失效
标题翻译：电子轮廓控制
公开(公告)号：US20080045012A1
公开(公告)日：2008-02-21
申请号：US11877233
申请日：2007-10-23
申请人： Antoine Manens , Vladimir Galburt , Yan Wang , Alain Duboust , Donald Olgado , Liang-Yuh Chen
发明人： Antoine Manens , Vladimir Galburt , Yan Wang , Alain Duboust , Donald Olgado , Liang-Yuh Chen
IPC分类号： H01L21/44
CPC分类号： B23H5/08 , B24B37/042 , C25D17/10 , C25F7/00
摘要： Embodiments of the present invention provide methods of electroprocessing a substrate. One embodiment of the present invention provides a method comprises pressing a substrate against a polishing pad with a force less than about two pounds per square inch, the substrate contacting a first electrode of the polishing pad, applying an electrical bias to the substrate with the first electrode relative to a second electrode of the polishing pad, wherein the second electrode is disposed below the second electrode, and biasing a third electrode disposed in the polishing pad radially outward of the second electrode.
摘要翻译：本发明的实施方案提供了对基底进行电处理的方法。本发明的一个实施方案提供了一种方法，包括以小于约2磅/平方英寸的力将衬底压靠抛光垫，衬底与抛光垫的第一电极接触，将第一电极施加电偏压至衬底电极，其中所述第二电极设置在所述第二电极下方，并且偏置设置在所述抛光垫中的第三电极，所述第三电极位于所述第二电极的径向外侧。

28. 发明申请

US20070096315A1 BALL CONTACT COVER FOR COPPER LOSS REDUCTION AND SPIKE REDUCTION 审中-公开
标题翻译：用于铜减少和减少焦距的球接触罩
公开(公告)号：US20070096315A1
公开(公告)日：2007-05-03
申请号：US11555588
申请日：2006-11-01
申请人： Antoine Manens , Alain Duboust , Donald Olgado , Yan Wang , Jose Salas-Vernis , Shou-Sung Chang
发明人： Antoine Manens , Alain Duboust , Donald Olgado , Yan Wang , Jose Salas-Vernis , Shou-Sung Chang
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： B24B37/16 , B23H5/08 , H01L21/32125
摘要： Embodiments of the invention generally provide a method and apparatus for processing a substrate in an electrochemical mechanical planarizing system. In one embodiment, a contact assembly for electrochemically processing a substrate includes a housing having a ball disposed in a passage formed through the housing. The ball is adapted to extend partially from the housing to contact the substrate during processing. The housing comprises a conductive material. In another embodiment, the housing comprises a lower housing and a contact cover wherein the contact cover comprises a conductive material.
摘要翻译：本发明的实施方案通常提供用于在电化学机械平面化系统中处理基底的方法和装置。在一个实施例中，用于电化学处理衬底的接触组件包括具有设置在通过壳体形成的通道中的球的壳体。该球适于在加工过程中从壳体部分延伸以接触基底。壳体包括导电材料。在另一个实施例中，壳体包括下壳体和接触盖，其中接触盖包括导电材料。

29. 发明申请

US20060166500A1 Electroprocessing profile control 失效
标题翻译：电加工配置文件控制
公开(公告)号：US20060166500A1
公开(公告)日：2006-07-27
申请号：US11043570
申请日：2005-01-26
申请人： Antoine Manens , Vladimir Galburt , Yan Wang , Alain Duboust , Donald Olgado , Liang-Yuh Chen
发明人： Antoine Manens , Vladimir Galburt , Yan Wang , Alain Duboust , Donald Olgado , Liang-Yuh Chen
IPC分类号： H01L21/44
CPC分类号： B23H5/08 , B24B37/042 , C25D17/10 , C25F7/00
摘要： A method and apparatus for electroprocessing a substrate is provided. In one embodiment, a method for electroprocessing a substrate includes the steps of biasing a first electrode to establish a first electroprocessing zone between the electrode and the substrate, and biasing a second electrode disposed radially outward of substrate with a polarity opposite the bias applied tot he first electrode.
摘要翻译：提供了一种用于电子处理衬底的方法和装置。在一个实施例中，一种用于对衬底进行电处理的方法包括以下步骤：偏置第一电极以在电极和衬底之间建立第一电处理区，并且以与其施加的偏压相反的极性偏置衬底径向外侧的第二电极第一电极。

30. 发明申请

US20060148381A1 Pad assembly for electrochemical mechanical processing 有权
标题翻译：焊接组件用于电化学机械加工
公开(公告)号：US20060148381A1
公开(公告)日：2006-07-06
申请号：US11369065
申请日：2006-03-06
申请人： Shou-Sung Chang , Stan Tsai , Donald Olgado , Liang-Yuh Chen , Alain Duboust , Ralph Wadensweiler
发明人： Shou-Sung Chang , Stan Tsai , Donald Olgado , Liang-Yuh Chen , Alain Duboust , Ralph Wadensweiler
IPC分类号： B24B51/00
CPC分类号： B24B37/22 , B23H5/06 , B23H5/08 , B23H5/10 , B24B37/046 , B24B37/11 , B24B37/24 , B24B37/26 , B24B49/16 , B24B53/017 , C25D17/10 , H01L21/32125
摘要： Embodiments of a pad assembly for processing a substrate are provided. The pad assembly includes a processing layer having a working surface adapted to process a substrate, a lower layer coupled to and disposed below the processing layer, and an electrode having an upper surface disposed above the lower layer and below the working surface of the processing layer. The upper surface of the electrode is at least partially exposed to the working surface to provide an electrolyte pathway between the upper surface of the electrode and the working surface.
摘要翻译：提供了用于处理基板的垫组件的实施例。焊盘组件包括处理层，其具有适于处理衬底的工作表面，耦合到处理层的下层并设置在处理层下方的电极，以及具有设置在处理层的工作表面下方和下方的上表面的电极。电极的上表面至少部分地暴露于工作表面，以在电极的上表面和工作表面之间提供电解质通路。

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