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    • 2. 发明授权
    • RF plasma reactor with cleaning electrode for cleaning during processing
of semiconductor wafers
    • RF等离子体反应器,其具有用于在半导体晶片的处理期间进行清洁的清洁电极
    • US5817534A
    • 1998-10-06
    • US567376
    • 1995-12-04
    • Yan YeHiroji HanawaDiana Xiaobing MaGerald Zheyao YinPeter LoewenhardtDonald OlgadoJames PapanuSteven S.Y. Mak
    • Yan YeHiroji HanawaDiana Xiaobing MaGerald Zheyao YinPeter LoewenhardtDonald OlgadoJames PapanuSteven S.Y. Mak
    • H05H1/46H01J37/32H01L21/00H01L21/302H01L21/304H01L21/3065H05H1/00
    • H01L21/67028H01J37/32862Y10S438/905
    • The invention is carried out in a plasma reactor for processing a semiconductor wafer, the plasma reactor having a chamber for containing a processing gas and having a conductor connected to an RF power source for coupling RF power into the reactor chamber to generate from the processing gas a plasma inside the chamber, the chamber containing at least one surface exposed toward the plasma and susceptible to contamination by particles produced during processing of the wafer, the invention being carried out by promoting, during processing of the wafer, bombarding of particles from the plasma onto the one surface to remove therefrom contaminants deposited during processing of the wafer. Such promoting of bombarding is carried out by providing an RF power supply and coupling, during processing of the wafer, RF power from the supply to the one surface. The coupling may be performed by a capacitive cleaning electrode adjacent the one surface, the capacitive cleaning electrode connected to the RF power supply. The capacitive cleaning electrode preferably is disposed on a side of the one surface opposite the plasma so as to be protected from contact with the plasma. Alternatively, the coupling may be carried out by a direct electrical connection from the RF power supply to the one surface.
    • 本发明在用于处理半导体晶片的等离子体反应器中进行,等离子体反应器具有用于容纳处理气体的室,并具有连接到RF电源的导体,用于将RF功率耦合到反应器室中以从处理气体产生 腔室内的等离子体,该腔室包含至少一个暴露于等离子体的表面并容易受到在晶片加工期间产生的颗粒的污染,本发明通过在晶片加工期间促进从等离子体中轰击颗粒而进行 在一个表面上去除在晶片加工期间沉积的污染物。 通过在晶片的处理期间提供RF电源和耦合来进行轰击的这种促进是从电源到单个表面的RF功率。 耦合可以通过与一个表面相邻的电容清洁电极,电容清洁电极连接到RF电源来进行。 电容式清洁电极优选地设置在与等离子体相对的一个表面的一侧,以便被保护而不与等离子体接触。 或者,耦合可以通过从RF电源到一个表面的直接电连接来执行。
    • 7. 发明授权
    • Lift pin alignment and operation methods and apparatus
    • 提升针对准和操作方法和装置
    • US06935466B2
    • 2005-08-30
    • US09797459
    • 2001-03-01
    • Dmitry LubomirskySheshraj TulshibagwaleDonald OlgadoAvi Tepman
    • Dmitry LubomirskySheshraj TulshibagwaleDonald OlgadoAvi Tepman
    • H01L21/683H01L21/687H01L21/00
    • H01L21/68742Y10S414/135
    • A lifting mechanism includes a plurality of lift pins which may be driven separately and independently upward to engage an alignment surface of the chamber using ambient atmospheric pressure as the chamber is evacuated by a pump. In the illustrated embodiment, each lift pin includes a piston which is exposed to the internal chamber pressure on one side of the piston, and is exposed to the external ambient pressure on the other side of the piston. As the pump evacuates the chamber, the internal chamber pressure decreases, causing each lift pin piston to drive the associated lift pin upward. Once all the lift pins have securely engaged the alignment surface, the lift pins may be clamped to a linking mechanism to permit a motor to actuate the lift pins during processing operations.
    • 提升机构包括多个提升销,所述提升销可以单独驱动并且独立地向上驱动,以便当所述室被泵排空时,使用环境大气压与室的对准表面接合。 在所示的实施例中,每个提升销包括活塞,该活塞暴露于活塞的一侧上的内部室压力,并且暴露于活塞另一侧的外部环境压力。 当泵排空室时,内部室压力降低,导致每个升降销活塞向上驱动相关联的升降销。 一旦所有升降销牢固地接合到对准表面上,升降销可以被夹紧到连接机构,以允许马达在加工操作期间致动提升销。
    • 8. 发明授权
    • Edge bead removal/spin rinse dry (EBR/SRD) module
    • 边缘珠去除/旋转冲洗干燥(EBR / SRD)模块
    • US06516815B1
    • 2003-02-11
    • US09350212
    • 1999-07-09
    • Joe StevensDonald OlgadoAlex KoYeuk-Fai Edwin Mok
    • Joe StevensDonald OlgadoAlex KoYeuk-Fai Edwin Mok
    • B08B302
    • H01L21/6708Y10S134/902
    • The present invention provides an apparatus for etching a substrate, comprising: a container; a substrate support disposed in the container; a rotation actuator attached to the substrate support; and a fluid delivery assembly disposed in the container to deliver an etchant to a peripheral portion of a substrate disposed on the substrate support. Preferably, the substrate support comprises a vacuum chuck and the fluid delivery assembly comprises one or more nozzles. The invention also provide a method for etching a substrate, comprising: rotating a substrate positioned on a rotatable substrate support; and delivering an etchant to a peripheral portion of the substrate. Preferably, the substrate is rotated at between about 100 rpm and about 1000 rpm, and the etchant is delivered in a direction that is substantially tangent to the peripheral portion of the substrate at an incident angle between about 0 degrees and about 45 degrees from a surface of substrate.
    • 本发明提供了一种用于蚀刻基板的设备,包括:容器; 设置在所述容器中的基板支撑件; 附接到基板支撑件的旋转致动器; 以及设置在所述容器中以将蚀刻剂输送到设置在所述基板支撑件上的基板的周边部分的流体输送组件。 优选地,衬底支撑件包括真空卡盘,并且流体输送组件包括一个或多个喷嘴。 本发明还提供了一种用于蚀刻衬底的方法,包括:旋转位于可旋转衬底支架上的衬底; 以及向衬底的周边部分输送蚀刻剂。 优选地,基板在约100rpm和约1000rpm之间旋转,并且蚀刻剂沿着与基板的周边部分基本相切的方向以距离表面大约0度至大约45度的入射角度被输送 的底物。
    • 9. 发明授权
    • Electro-chemical deposition system
    • 电化学沉积系统
    • US06267853B1
    • 2001-07-31
    • US09350210
    • 1999-07-09
    • Yezdi DordiMuhammad Atif MalikHenan HaoTimothy H. FranklinJoe StevensDonald Olgado
    • Yezdi DordiMuhammad Atif MalikHenan HaoTimothy H. FranklinJoe StevensDonald Olgado
    • C25B1500
    • C25D17/001C25D7/123H01L21/2885H05K3/241
    • The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes an edge bead removal/spin-rinse-dry (EBR/SRD) station disposed on the mainframe adjacent the loading station, a rapid thermal anneal chamber attached to the loading station, a seed layer repair station disposed on the mainframe, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.
    • 本发明提供了一种电化学沉积系统,其被设计成具有可扩展以适应未来设计和间隙填充要求的柔性结构,并提供令人满意的生产量以满足其它处理系统的需求。 电化学沉积系统通常包括具有主机晶片传送机器人的主机,与主机连接设置的加载站,与主机连接设置的一个或多个处理单元,以及流体连接到该主机的一个或多个 电加工电池。 优选地,电化学沉积系统包括设置在与装载站相邻的主机上的边缘珠去除/旋转干燥(EBR / SRD)站,附接到装载站的快速热退火室,种子层修复站 设置在主机上,以及用于控制电化学沉积过程和电化学沉积系统的部件的系统控制器。