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91. 发明申请

US20100285670A1 PLASMA PROCESSING APPARATUS INCLUDING ETCHING PROCESSING APPARATUS AND ASHING PROCESSING APPARATUS AND PLASMA PROCESSING METHOD USING PLASMA PROCESSING APPARATUS 失效
标题翻译：等离子体处理装置，其中包括蚀刻加工装置和使用等离子体加工装置的匀浆加工装置和等离子体处理方法
公开(公告)号：US20100285670A1
公开(公告)日：2010-11-11
申请号：US12840847
申请日：2010-07-21
申请人： Hiroyuki KOBAYASHI , Masaru IZAWA
发明人： Hiroyuki KOBAYASHI , Masaru IZAWA
IPC分类号： H01L21/465
CPC分类号： H01J37/32642 , H01J37/32623 , H01J2237/335 , H01L21/67207 , H01L21/68735 , H01L21/68785 , Y10S156/915
摘要： A diameter of a mounting unit of the stage of an asking processing apparatus is less than a diameter of a mounting unit of the stage of an etching processing apparatus, and the diameter of the mounting unit of the stage of the etching processing apparatus is less than a diameter of an objective item.
摘要翻译：询问处理装置的台的安装单元的直径小于蚀刻处理装置的台的安装单元的直径，并且蚀刻处理装置的台的安装单元的直径小于客观物品的直径。

92. 发明申请

US20100279511A1 Wafer Through Silicon Via Forming Method And Equipment Therefor 有权
标题翻译：通过硅片通过成型方法和设备来晶圆
公开(公告)号：US20100279511A1
公开(公告)日：2010-11-04
申请号：US12512813
申请日：2009-07-30
申请人： Jung Hwan CHUN , Gyu Han KIM
发明人： Jung Hwan CHUN , Gyu Han KIM
IPC分类号： H01L21/3065 , H01L21/306 , H01L21/465 , C23F1/08
CPC分类号： H01L21/76898
摘要： Provided are a wafer through silicon via (TSV) forming method and equipment therefor. The wafer TSV forming method includes the operations of arranging a wafer having a front surface having a circuit area patterned thereon; recognizing locations of bond pads in the circuit area of the front surface of the wafer by using an image recognition camera, and converting the recognition of the locations into bond pad location information with respect to a back surface of the wafer; flipping the wafer; forming etching holes with middle depth in the back surface of the wafer by using a laser in a manner to match the locations of the bond pads by using the bond pad location information from the image recognition camera; and performing a plasma isotropic etching on the back surface having formed therein the etching holes with middle depth, thereby forming TSVs penetrating the bond pads.
摘要翻译：提供了一种晶片通过硅通孔（TSV）的形成方法及其设备。晶片TSV形成方法包括布置具有其上形成有电路区域的正面的晶片的操作; 通过使用图像识别照相机识别晶片正面的电路区域中的接合焊盘的位置，并且将位置的识别转换为相对于晶片的背面的接合焊盘位置信息; 翻转晶片; 通过使用激光以通过使用来自图像识别照相机的接合焊盘位置信息来匹配接合焊盘的位置的方式在晶片的后表面中形成具有中间深度的蚀刻孔; 并且在其中形成有具有中间深度的蚀刻孔的背表面上进行等离子体各向同性蚀刻，从而形成贯穿接合焊盘的TSV。

93. 发明申请

US20100243167A1 SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：基板加工设备
公开(公告)号：US20100243167A1
公开(公告)日：2010-09-30
申请号：US12748702
申请日：2010-03-29
申请人： Daisuke Hayashi
发明人： Daisuke Hayashi
IPC分类号： H01L21/465
CPC分类号： H01J37/32568 , H01J37/32018 , H01J37/32458 , H01J37/32577 , H01J37/32908 , H01J2237/024 , H01J2237/1502 , H01J2237/327 , H01J2237/334 , H01L21/67069
摘要： A substrate processing apparatus includes: a cylindrical shaped chamber configured to accommodate a substrate; a movable electrode capable of moving along a central axis of the cylindrical shaped chamber within the cylindrical shaped chamber; a facing electrode facing the movable electrode within the cylindrical shaped chamber; and an expansible/contractible partition wall connecting the movable electrode with an end wall on one side of the cylindrical shaped chamber. In the substrate processing apparatus, a high frequency power is applied to a first space between the movable electrode and the facing electrode, a processing gas is introduced thereto, and the movable electrode is not in contact with a sidewall of the cylindrical shaped chamber. At least one low dielectric member is provided in a second space between the movable electrode and the end wall on one side of the cylindrical shaped chamber.
摘要翻译：一种基板处理装置，包括：圆筒形室，其构造成容纳基板; 可移动电极，其能够沿着圆柱形腔室的中心轴线移动; 在圆柱形腔室内面向可动电极的面对电极; 以及将可动电极与圆筒形室的一侧上的端壁连接的可膨胀/收缩的分隔壁。在基板处理装置中，向可动电极和对置电极之间的第一空间施加高频电力，向其中引入处理气体，并且可动电极不与圆筒形室的侧壁接触。至少一个低电介质构件设置在可动电极和位于圆柱形腔的一侧的端壁之间的第二空间中。

94. 发明申请

US20100216263A1 Method and Apparatus for Measuring Process Parameters of a Plasma Etch Process 审中-公开
标题翻译：用于测量等离子体蚀刻工艺过程参数的方法和装置
公开(公告)号：US20100216263A1
公开(公告)日：2010-08-26
申请号：US12524855
申请日：2008-01-31
申请人： Stephen Daniels , Shane Glynn , Felipe Soberon , Maria Tipaka
发明人： Stephen Daniels , Shane Glynn , Felipe Soberon , Maria Tipaka
IPC分类号： H01L21/66 , H01L21/465
CPC分类号： H01J37/32963 , H01J37/32935 , H01J37/32972
摘要： Method and apparatus for measuring process parameters of a plasma etch process. A method for detecting at least one process parameter of a plasma etch process being performed on a semiconductor wafer. The method comprises the steps of detecting light being generated from the plasma during the etch process, filtering the detected light to extract modulated light; and processing the detected modulated light to determine at least one process parameter of the etch process.
摘要翻译：用于测量等离子体蚀刻工艺的工艺参数的方法和装置。一种用于检测在半导体晶片上执行的等离子体蚀刻工艺的至少一个工艺参数的方法。该方法包括以下步骤：在蚀刻过程期间检测从等离子体产生的光，过滤检测到的光以提取调制光; 以及处理检测到的调制光以确定蚀刻工艺的至少一个工艺参数。

95. 发明申请

US20100206845A1 PLASMA PROCESSING APPARATUS AND METHOD FOR OPERATING THE SAME 有权
标题翻译：等离子体处理装置及其操作方法
公开(公告)号：US20100206845A1
公开(公告)日：2010-08-19
申请号：US12397447
申请日：2009-03-04
申请人： Takahisa Hashimoto , Hideki Kihara , Muneo Furuse
发明人： Takahisa Hashimoto , Hideki Kihara , Muneo Furuse
IPC分类号： H01L21/465 , C23C16/00 , C23C16/50
CPC分类号： H01L21/67069 , H01J37/3244 , H01J37/32449 , H01L21/67017
摘要： The invention provides a plasma processing apparatus and a method for purging the apparatus, capable of preventing damage of components caused by pressure difference during purging operation of a vacuum reactor, and capable of preventing residual processing gas from remaining in the vacuum reactor. Inert gas is introduced through an inert gas feed port 233 on a side wall of a depressurized processing chamber (V1) 226 of a plasma processing apparatus, and the interior of the processing chamber (V1) 226 is brought to predetermined pressure by the inert gas, and thereafter, the inert gas is supplied to processing gas supply paths 213 and 216 (V2) communicated to a plurality of through holes 224 for introducing processing gas, so as to introduce the inert gas through the plurality of through holes 224 into the processing chamber (V1) 226.
摘要翻译：本发明提供一种等离子体处理装置和一种清洗装置的方法，能够防止在真空反应器的净化操作期间由压力差引起的部件的损坏，并且能够防止残留的处理气体残留在真空反应器中。惰性气体通过等离子体处理装置的减压处理室（V1）226的侧壁上的惰性气体供给口233引入，处理室（V1）226的内部被惰性气体然后将惰性气体供给到与多个用于引入处理气体的通孔224连通的处理气体供给路径213,216（V2），以将惰性气体通过多个通孔224引入到处理室（V1）226。

96. 发明申请

US20100190348A1 Manufacturing method of semiconductor substrate and substrate processing apparatus 有权
标题翻译：半导体衬底和衬底处理设备的制造方法
公开(公告)号：US20100190348A1
公开(公告)日：2010-07-29
申请号：US12654878
申请日：2010-01-07
申请人： Naonori Akae , Yoshiro Hirose , Tomohide Kato
发明人： Naonori Akae , Yoshiro Hirose , Tomohide Kato
IPC分类号： H01L21/465 , H01L21/46 , H01L21/477
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/45527 , C23C16/45542 , H01L21/0217 , H01L21/0228 , H01L21/3143 , H01L21/3145 , H01L2924/3011
摘要： A first processing gas containing a first element and a second processing gas containing a second element are alternately supplied to a surface of a substrate placed in a processing chamber, to thereby form a first thin film, and a second processing gas and a third processing containing the first element and different from the first processing gas are alternately supplied, to thereby form a second thin film on the first thin film, having the same element component as that of the first thin film.
摘要翻译：将含有第一元素和含有第二元素的第二处理气体的第一处理气体交替地供给到放置在处理室中的基板的表面，从而形成第一薄膜，以及第二处理气体和含有交替地供给与第一处理气体不同的第一元件，从而在第一薄膜上形成与第一薄膜相同的元件成分的第二薄膜。

97. 发明申请

US20100144118A1 Method for Stacking Semiconductor Dies 有权
标题翻译：堆叠半导体模具的方法
公开(公告)号：US20100144118A1
公开(公告)日：2010-06-10
申请号：US12330209
申请日：2008-12-08
申请人： Ku-Feng Yang , Weng-Jin Wu , Wen-Chih Chiou , Chen-Hua Yu
发明人： Ku-Feng Yang , Weng-Jin Wu , Wen-Chih Chiou , Chen-Hua Yu
IPC分类号： H01L21/46 , H01L21/465
CPC分类号： H01L21/486 , H01L21/76898 , H01L25/0657 , H01L25/50 , H01L2224/0401 , H01L2224/13009 , H01L2224/13111 , H01L2224/13139 , H01L2224/13147 , H01L2224/14181 , H01L2224/16146 , H01L2224/32145 , H01L2224/73203 , H01L2224/73204 , H01L2224/94 , H01L2225/06513 , H01L2225/06541 , H01L2924/01019 , H01L2224/11
摘要： A system and method for stacking semiconductor dies is disclosed. A preferred embodiment comprises forming through-silicon vias through the wafer, protecting a rim edge of the wafer, and then removing the unprotected portions so that the rim edge has a greater thickness than the thinned wafer. This thickness helps the fragile wafer survive further transport and process steps. The rim edge is then preferably removed during singulation of the individual dies from the wafer.
摘要翻译：公开了一种用于堆叠半导体管芯的系统和方法。优选实施例包括形成通过晶片的穿硅通孔，保护晶片的边缘边缘，然后去除未受保护的部分，使得边缘边缘的厚度大于薄的晶片。该厚度有助于脆弱的晶片在进一步的运输和工艺步骤中保持生存。然后优选在从晶片分离单个模具期间移除边缘。

98. 发明申请

US20100095891A1 METHOD AND APPARATUS FOR CLEANING A CVD CHAMBER 审中-公开
标题翻译：清洁CVD室的方法和装置
公开(公告)号：US20100095891A1
公开(公告)日：2010-04-22
申请号：US12684039
申请日：2010-01-07
申请人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
发明人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
IPC分类号： H01L21/465
CPC分类号： C23C16/4405 , C23C16/458 , C23C16/46 , H01J37/32082 , H01J37/32862 , H01L21/67103
摘要： The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
摘要翻译：本发明是一种方法和装置，该方法和设备使用在由电极与腔室的反应体积分离的气体混合容积中的等离子体通电的清洁气体来清洁化学气相沉积（CVD）室。在一个实施例中，RF功率源耦合到室的盖，而开关用于将喷头连接到接地端子或RF功率源。

99. 发明申请

US20100078128A1 SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：基板加工设备
公开(公告)号：US20100078128A1
公开(公告)日：2010-04-01
申请号：US12568175
申请日：2009-09-28
申请人： Tomoyuki YAMADA , Mamoru Oishi , Kanako Kitayama
发明人： Tomoyuki YAMADA , Mamoru Oishi , Kanako Kitayama
IPC分类号： H01L21/465 , B05C11/00
CPC分类号： C23C16/455 , C23C16/45561 , Y10T137/218 , Y10T137/2202 , Y10T137/2213 , Y10T137/2218 , Y10T137/8593 , Y10T137/87917
摘要： A gas flow of a gas pipe is indicated before an electromagnetic valve is actually opened, so that the electromagnetic valve can be prevented from being opened or closed by a wrong manipulation or hazards caused by undesired mixing of gases can be avoided so as to improve safety. The substrate processing apparatus includes a state detection unit configured to detect an opening/closing request state and an opening/closing state of a valve installed at a gas pipeline; and a indication unit configured to indicate a gas flow state of the gas pipeline predicted according to the opening/closing request state and a gas flow state of the gas pipeline when the valve is opened, in a way that each state is distinguished.
摘要翻译：在电磁阀实际打开之前，指示气体管道的气体流动，从而可以防止电磁阀由于错误的操作而被打开或关闭，或者避免由于气体的不期望的混合引起的危险，从而提高安全性。基板处理装置包括状态检测单元，其被配置为检测安装在气体管道处的阀的打开/关闭请求状态和打开/关闭状态; 以及指示单元，其被配置为以每种状态被区分的方式指示根据打开/关闭请求状态预测的气体管道的气体流动状态和当打开阀时气体管道的气体流动状态。

100. 发明申请

US20100048022A1 SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体制造装置及制造半导体器件的方法
公开(公告)号：US20100048022A1
公开(公告)日：2010-02-25
申请号：US12490681
申请日：2009-06-24
申请人： Hiroshi KUBOTA
发明人： Hiroshi KUBOTA
IPC分类号： H01L21/465 , C23F1/02 , C23C16/50
CPC分类号： H01L21/6708 , C23C16/01 , C23C16/042 , C23C16/26 , C23C16/505 , H01J37/32091 , H01J37/3244 , H01J37/32449 , H01L21/02087 , H01L21/02115 , H01L21/02274 , H01L21/0337 , H01L21/31122 , H01L21/3146
摘要： A semiconductor manufacturing apparatus that forms a carbon film on a wafer by plasma enhanced chemical vapor deposition includes a body having a top opening; a stage provided within the body for placement of the wafer; a showerhead that encloses the top opening and that introduces a deposition gas or an etch gas; and a gas delivery system including a central gas inlet that introduces gas toward a central portion of the wafer from a central portion of the showerhead, and a peripheral gas inlet that introduces gas toward a bevel of the wafer from an outer peripheral portion of the showerhead, wherein the gas delivery system, after activating the etch gas outside the body, delivers the activated etch gas toward the bevel of the wafer to selectively remove a portion of the carbon film formed on the bevel of the wafer.
摘要翻译：通过等离子体增强化学气相沉积在晶片上形成碳膜的半导体制造装置包括具有顶部开口的主体; 设置在所述体内的用于放置晶片的台阶; 包围顶部开口并引入沉积气体或蚀刻气体的喷头; 以及包括中央气体入口的气体输送系统，所述中心气体入口从所述喷头的中心部向所述晶片的中心部分引入气体;以及周边气体入口，其从所述喷头的外周部向所述晶片的斜面引入气体其中所述气体输送系统在激活所述体外的所述蚀刻气体之后将所述激活的蚀刻气体朝向所述晶片的斜面传送，以选择性地去除在所述晶片的斜面上形成的所述碳膜的一部分。

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