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1. 发明申请

US20180337079A1 WAFER BOAT AND PLASMA TREATMENT DEVICE FOR WAFERS 审中-公开
公开(公告)号：US20180337079A1
公开(公告)日：2018-11-22
申请号：US15777299
申请日：2016-11-17
申请人： CENTROTHERM INTERNATIONAL AG
发明人： Peter Völk , Uli Walk , Wolfgang Jooss
IPC分类号： H01L21/673 , H01L31/18 , H01L21/687 , H01J37/32 , C23C16/34 , C23C16/505 , C23C16/458
CPC分类号： H01L21/67313 , C23C16/4587 , C23C16/505 , H01J37/32715 , H01J37/32733 , H01J37/32908 , H01J37/3299 , H01L21/67754 , H01L21/68771
摘要： The invention relates to a plate element for a wafer boat for the plasma treatment of disk-shaped wafers, in particular semiconductor wafers for semiconductor or photovoltaic applications. The plate element is electrically conductive and has at least one holding unit on each side, for holding a wafer in a wafer holding region. The plate element has at least one recess in at least one side of the plate element and/or at least one opening in the plate element, wherein the at least one recess and/or the at least one opening in the plate element lies at least partially radially outside of the wafer holding region and directly adjacent thereto. The invention further relates to a wafer boat that has a plurality of plate elements of the above type arranged parallel to each other, wherein plate elements arranged adjacent are electrically insulated from each other. The invention further relates to a wafer boat in combination with a plasma treatment device, which has a process chamber for accommodating the wafer boat, means for controlling a process gas atmosphere in the process chamber in an open-loop or closed-loop manner, and at least one voltage source, which can be connected to the electrically conductive plate elements of the wafer boat in a suitable manner in order to apply a voltage between directly adjacent wafers held in the wafer boat.

2. 发明申请

US20170105274A1 Method of Maintaining a Supply of Power to a Load 审中-公开
公开(公告)号：US20170105274A1
公开(公告)日：2017-04-13
申请号：US15386763
申请日：2016-12-21
申请人： TRUMPF Huettinger GmbH + Co. KG
发明人： Ekkehard Mann , Markus Winterhalter , Florian Zehetner
IPC分类号： H05H1/24
CPC分类号： H05H1/24 , H01J37/32128 , H01J37/32183 , H01J37/32908 , H01J37/32926 , H01J37/32944 , H02J9/06 , H05H1/46 , H05H1/54
摘要： A method of maintaining a supply of power to a load comprising operating a power generator connected to a mains voltage in a rated operating mode, generating a power signal by the power generator, feeding the power signal to the load, monitoring the mains voltage or a variable derived therefrom for an occurrence of a first specified event, and operating the power generator in a first predefined operating mode based on the occurrence of the first specified event, wherein the first predefined operating mode differs from the rated operating mode.

3. 发明申请

US20170053819A1 WEAR DETECTION OF CONSUMABLE PART IN SEMICONDUCTOR MANUFACTURING EQUIPMENT 有权
标题翻译：磨损半导体制造设备中消耗部件的检测
公开(公告)号：US20170053819A1
公开(公告)日：2017-02-23
申请号：US14846635
申请日：2015-09-04
申请人： Lam Research Corporation
发明人： Brett C. Richardson
IPC分类号： H01L21/67 , C23C16/50 , H01L21/677 , C23C16/52 , G01B11/14 , G01B7/14 , H01J37/32 , C23C16/455
CPC分类号： H01L21/67288 , G01N21/88 , G01N21/9501 , H01J37/3178 , H01J37/32009 , H01J37/32091 , H01J37/3244 , H01J37/32733 , H01J37/32743 , H01J37/32899 , H01J37/32908 , H01J2237/332 , H01J2237/334 , H01L21/67253 , H01L21/67259 , H01L21/67742 , H01L21/67748
摘要： Methods, systems, and computer programs are presented for determining wear of a consumable part in a semiconductor processing apparatus. One chamber includes a reference part, a consumable part, a transfer arm for transferring the substrate into the chamber, a sensor on the transfer arm, and a controller. The reference part is not subject to wear during operation of the chamber, while the consumable part is subject to wear. The sensor is configured to measure a first distance from the sensor to a surface of the consumable part as the transfer arm travels near the consumable part, and the sensor is configured to measure a second distance from the sensor to a surface of the reference part as the transfer arm travels near the reference part. The controller determines the wear amount of the consumable part based on the first distance and the second distance.
摘要翻译：呈现了用于确定半导体处理装置中的消耗部件的磨损的方法，系统和计算机程序。一个腔室包括参考部件，消耗部件，用于将衬底转移到腔室中的传送臂，传送臂上的传感器和控制器。参考部件在室的运行期间不会磨损，而消耗部件磨损。传感器被配置成当传送臂行进在消耗部分附近时测量从传感器到消耗部件的表面的第一距离，并且传感器被配置成测量从传感器到参考部分的表面的第二距离，如传送臂在参考部分附近行进。控制器基于第一距离和第二距离来确定消耗部件的磨损量。

4. 发明申请

US20160042961A1 ELECTRON BEAM PLASMA SOURCE WITH ROTATING CATHODE, BACKSIDE HELIUM COOLING AND LIQUID COOLED PEDESTAL FOR UNIFORM PLASMA GENERATION 审中-公开
标题翻译：电子束等离子体源，具有旋转阴极，背面氦冷却和液体冷却底物，用于均匀等离子体生成
公开(公告)号：US20160042961A1
公开(公告)日：2016-02-11
申请号：US14453023
申请日：2014-08-06
申请人： APPLIED MATERIALS, INC.
发明人： Leonid Dorf , Hamid Tavassoli , Kenneth S. Collins , Kartik Ramaswamy , James D. Carducci , Shahid D. Rauf , Richard Fovell , Fernando M. Silveira , Mark Markovsky
IPC分类号： H01L21/3065 , H01J37/32
CPC分类号： H01J37/3233 , H01J37/32715 , H01J37/32724 , H01J37/32733 , H01J37/32908
摘要： A plasma reactor has an electron beam source as a plasma source and a rotation motor coupled to rotate the workpiece support about a rotation axis that is transverse to an emission path of said electron beam source.
摘要翻译：等离子体反应器具有作为等离子体源的电子束源和旋转马达，该旋转马达被耦合以围绕横向于所述电子束源的发射路径的旋转轴线旋转工件支撑件。

5. 发明申请

US20100243167A1 SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：基板加工设备
公开(公告)号：US20100243167A1
公开(公告)日：2010-09-30
申请号：US12748702
申请日：2010-03-29
申请人： Daisuke Hayashi
发明人： Daisuke Hayashi
IPC分类号： H01L21/465
CPC分类号： H01J37/32568 , H01J37/32018 , H01J37/32458 , H01J37/32577 , H01J37/32908 , H01J2237/024 , H01J2237/1502 , H01J2237/327 , H01J2237/334 , H01L21/67069
摘要： A substrate processing apparatus includes: a cylindrical shaped chamber configured to accommodate a substrate; a movable electrode capable of moving along a central axis of the cylindrical shaped chamber within the cylindrical shaped chamber; a facing electrode facing the movable electrode within the cylindrical shaped chamber; and an expansible/contractible partition wall connecting the movable electrode with an end wall on one side of the cylindrical shaped chamber. In the substrate processing apparatus, a high frequency power is applied to a first space between the movable electrode and the facing electrode, a processing gas is introduced thereto, and the movable electrode is not in contact with a sidewall of the cylindrical shaped chamber. At least one low dielectric member is provided in a second space between the movable electrode and the end wall on one side of the cylindrical shaped chamber.
摘要翻译：一种基板处理装置，包括：圆筒形室，其构造成容纳基板; 可移动电极，其能够沿着圆柱形腔室的中心轴线移动; 在圆柱形腔室内面向可动电极的面对电极; 以及将可动电极与圆筒形室的一侧上的端壁连接的可膨胀/收缩的分隔壁。在基板处理装置中，向可动电极和对置电极之间的第一空间施加高频电力，向其中引入处理气体，并且可动电极不与圆筒形室的侧壁接触。至少一个低电介质构件设置在可动电极和位于圆柱形腔的一侧的端壁之间的第二空间中。

6. 发明授权

US07674351B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US07674351B2
公开(公告)日：2010-03-09
申请号：US10929439
申请日：2004-08-31
申请人： Akitaka Makino , Hideki Kihara , Susumu Tauchi
发明人： Akitaka Makino , Hideki Kihara , Susumu Tauchi
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/6719 , H01J37/32513 , H01J37/32522 , H01J37/32807 , H01J37/32816 , H01J37/32908 , Y10S156/916
摘要： A vacuum processing apparatus that includes an inner wall member disposed inside of an outer side wall member of a vacuum container, the inner wall member surrounding a side of a sample stand on which a sample to be processed is placed and facing to a plasma generated in a chamber inside of the inner wall member. The apparatus also includes an upper member arranged in the vacuum chamber above a flange portion of the inner wall member, contacting with an upper surface of the flange portion and transmitting a force pressing downwardly in a state where the inside of the vacuum container is reduced in pressure. The inner wall member is thermally connected with a temperature adjusting device which controls a temperature of the inner wall member through the upper surface of the flange portion and the upper member.
摘要翻译：一种真空处理装置，包括设置在真空容器的外侧壁构件内部的内壁构件，所述内壁构件围绕样品台的一侧放置待处理样品并面向等离子体在内壁构件内部的腔室。该装置还包括一个上部构件，其布置在真空室中，位于内壁构件的凸缘部分的上方，与凸缘部分的上表面接触并且在真空容器的内部减小的状态下向下压力压力。内壁构件通过温度调节装置热连接，温度调节装置通过凸缘部分的上表面和上部构件来控制内壁构件的温度。

7. 发明授权

US11773811B2 Intake plasma generator systems and methods 有权
公开(公告)号：US11773811B2
公开(公告)日：2023-10-03
申请号：US17834352
申请日：2022-06-07
申请人： ThrivalTech, LLC
发明人： Garrett Hill
IPC分类号： F02M27/04 , F02M35/10 , H01J37/32
CPC分类号： F02M27/042 , F02M35/10019 , F02M35/10222 , F02M35/10249 , H01J37/32458 , H01J37/32541 , H01J37/32559 , H01J37/32908
摘要： Disclosed are systems, methods, and devices for generating radicals in an air stream at the intake of an internal combustion engine, as well as increasing the thrust of such air streams into the engine. A plasma generator including plasma actuators, dielectric barrier discharge electrodes, or both is positioned in the intake stream. Plasma actuators are disposed on the interior surface of the plasma generator, exposed to the intake stream. Dielectric barrier discharge electrodes protrude into the intake air stream. Plasma, preferably DBD plasma, glow plasma, or filamentary plasma, is generated in the air intake stream, creating radicals in the stream, mixing the radicals in the stream, and reducing drag while increasing thrust of air in the intake stream. A concentric cylinder can be further disposed in the plasma generator, with further plasma actuators, dielectric barrier discharge electrodes, or both, on the interior and exterior surfaces of the cylinder.

8. 发明授权

US09660182B2 Plasma processing method and plasma processing apparatus 有权
公开(公告)号：US09660182B2
公开(公告)日：2017-05-23
申请号：US14387655
申请日：2013-04-22
申请人： Tokyo Electron Limited
发明人： Takashi Sone , Daisuke Urayama , Masato Kushibiki , Nao Koizumi , Wataru Kume , Eiichi Nishimura , Fumiko Yamashita
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L43/12 , H01J37/32
CPC分类号： H01L43/12 , H01J37/32009 , H01J37/32091 , H01J37/32165 , H01J37/32568 , H01J37/32807 , H01J37/32825 , H01J37/32834 , H01J37/32908 , H01J2237/18 , H01J2237/327 , H01J2237/3341
摘要： A plasma processing method of etching a multilayered material having a structure where a first magnetic layer 105 and a second magnetic layer 103 are stacked with an insulating layer 104 therebetween is performed by a plasma processing apparatus 10 including a processing chamber 12 where a processing space S is formed; and a gas supply unit 44 of supplying a processing gas into the processing space, and includes a first etching process where the first magnetic layer is etched by supplying a first processing gas and generating plasma, and the first etching process is stopped on a surface of the insulating layer; and a second etching process where a residue Z is removed by supplying a second processing gas and generating plasma. The first magnetic layer and the second magnetic layer contain CoFeB, the first processing gas contains Cl2, and the second processing gas contains H2.

9. 发明授权

US09620377B2 Technique to deposit metal-containing sidewall passivation for high aspect ratio cylinder etch 有权
公开(公告)号：US09620377B2
公开(公告)日：2017-04-11
申请号：US14803578
申请日：2015-07-20
申请人： Lam Research Corporation
发明人： Eric A. Hudson , Mark H. Wilcoxson , Kalman Pelhos , Hyung Joo Shin
IPC分类号： H01L21/3065 , H01L21/02 , H01L21/67 , H01L21/687
CPC分类号： H01L21/30655 , C23C16/0209 , C23C16/0245 , C23C16/045 , C23C16/38 , C23C16/40 , C23C16/4408 , C23C16/45542 , C23C16/45546 , C23C16/505 , C23C16/56 , H01J37/32165 , H01J37/32568 , H01J37/32577 , H01J37/32715 , H01J37/32908 , H01L21/02175 , H01L21/02274 , H01L21/0228 , H01L21/28556 , H01L21/31116 , H01L21/67069 , H01L21/68785 , H01L21/76802 , H01L21/76843 , H01L27/10847 , H01L27/11556 , H01L27/11582
摘要： Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in a dielectric-containing stack on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating (e.g., a metal-containing coating) on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reaction mechanisms that result in substantially complete sidewall coating. Metal-containing coatings have been shown to provide particularly good resistance to lateral etch during the etching operation. In some cases, a bilayer approach may be used to deposit the protective coating on sidewalls of partially etched features.

10. 发明授权

US09564298B2 Semiconductor manufacturing apparatus and semiconductor device manufacturing method using the same 有权
标题翻译：半导体制造装置及使用其的半导体装置的制造方法
公开(公告)号：US09564298B2
公开(公告)日：2017-02-07
申请号：US14543897
申请日：2014-11-18
申请人： Samsung Electronics Co., Ltd.
发明人： Ju-hee Lee , Su-ho Lee , Won-hyuk Jang , Jae-beom Park , Ik-soo Kim , Myoung-woon Kim
IPC分类号： H01J37/32
CPC分类号： H01J37/3288 , H01J37/32577 , H01J37/32908
摘要： A semiconductor manufacturing apparatus may include a chamber accommodating a substrate to be processed, a first electrode providing electric field in the chamber and a second electrode opposing to the first electrode, and a first power transmitting rod connected to one of the first electrode and the second electrode. A conductive stress attenuating unit may be formed in the first power transmitting rod. Methods of manufacturing semiconductor devices using the semiconductor manufacturing apparatus are also disclosed.
摘要翻译：半导体制造装置可以包括容纳要处理的基板的腔室，在腔室中提供电场的第一电极和与第一电极相对的第二电极，以及连接到第一电极和第二电极之一的第一电力传输杆电极。可以在第一动力传递杆中形成导电应力衰减单元。还公开了使用半导体制造装置制造半导体器件的方法。

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