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1. 发明授权

US08361902B2 Substrate processing apparatus capable of cleaning inside thereof and cleaning control apparatus for controlling cleaning process of substrate processing apparatus 有权
标题翻译：能够在其内部进行清洗的基板处理装置和用于控制基板处理装置的清洗处理的清洗控制装置
公开(公告)号：US08361902B2
公开(公告)日：2013-01-29
申请号：US13541814
申请日：2012-07-05
申请人： Tomohide Kato
发明人： Tomohide Kato
IPC分类号： H01L21/28
CPC分类号： C23C16/345 , C23C16/4405 , C23C16/45523 , C23C16/52 , H01L21/0217 , H01L21/02211 , H01L21/02247 , H01L21/02255 , H01L21/0228 , H01L21/3185
摘要： A cleaning control apparatus capable of performing a cleaning process efficiently regardless of qualities and thicknesses of films formed in a process tube and a gas supply nozzle. The cleaning control apparatus employs cleaning request signal output units configured to output cleaning request signals requesting cleaning processes of a silicon-containing gas supply system and nitriding source gas supply system when accumulated amounts of the molecules of the silicon-containing gas and the nitriding source gas exceeds preset values.
摘要翻译：一种清洁控制装置，能够有效地进行清洁处理，而与处理管和气体供给喷嘴中形成的膜的质量和厚度无关。清洁控制装置使用清洗请求信号输出单元，其被配置为当含硅气体和氮化源气体的分子的累积量时，输出要求含硅气体供应系统和氮化源气体供应系统的清洁处理的清洁请求信号超过预设值。

2. 发明申请

US20100167541A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, CLEANING METHOD AND CLEANING CONTROL APPARATUS 有权
标题翻译：制造半导体器件的方法，清洁方法和清洁控制装置
公开(公告)号：US20100167541A1
公开(公告)日：2010-07-01
申请号：US12644370
申请日：2009-12-22
申请人： Tomohide KATO
发明人： Tomohide KATO
IPC分类号： H01L21/02
CPC分类号： C23C16/345 , C23C16/4405 , C23C16/45523 , C23C16/52 , H01L21/0217 , H01L21/02211 , H01L21/02247 , H01L21/02255 , H01L21/0228 , H01L21/3185
摘要： Efficient cleaning is possible although the film qualities and thicknesses of a reaction tube and a gas supply nozzle are different. There is provided a method of manufacturing a semiconductor device. The method includes forming a film on a substrate, performing a first cleaning process to remove a first deposition substance attached to an inner wall of a gas introducing part, and performing a second cleaning process to remove a second deposition substance attached to an inside of a process chamber and having a chemical composition different from that of the first deposition substance. In the first cleaning process, cleaning conditions are set according to the accumulated supply time of a first process gas supplied to the inside of the process chamber through the gas introducing part, and in the second cleaning process, cleaning conditions are set according to the accumulated thickness of a film formed on the substrate.
摘要翻译：尽管反应管和气体供应喷嘴的膜质量和厚度不同，但是可以进行有效的清洁。提供了制造半导体器件的方法。该方法包括在基板上形成膜，进行第一清洗处理以除去附着在气体导入部的内壁的第一沉积物质，进行第二清洗处理，除去附着在气体导入部的内部的第二沉积物质处理室，其化学成分不同于第一沉积物质的化学成分。在第一清洗处理中，根据通过气体导入部供给到处理室内部的第一处理气体的累积供给时间来设定清洗条件，在第二清洗处理中，根据累积的在基板上形成的膜的厚度。

3. 发明授权

US08236692B2 Method of manufacturing semiconductor device, cleaning method and cleaning control apparatus 有权
标题翻译：制造半导体器件的方法，清洁方法和清洁控制装置
公开(公告)号：US08236692B2
公开(公告)日：2012-08-07
申请号：US12644370
申请日：2009-12-22
申请人： Tomohide Kato
发明人： Tomohide Kato
IPC分类号： H01L21/44
CPC分类号： C23C16/345 , C23C16/4405 , C23C16/45523 , C23C16/52 , H01L21/0217 , H01L21/02211 , H01L21/02247 , H01L21/02255 , H01L21/0228 , H01L21/3185
摘要： Efficient cleaning is possible although the film qualities and thicknesses of a reaction tube and a gas supply nozzle are different. There is provided a method of manufacturing a semiconductor device. The method includes forming a film on a substrate, performing a first cleaning process to remove a first deposition substance attached to an inner wall of a gas introducing part, and performing a second cleaning process to remove a second deposition substance attached to an inside of a process chamber and having a chemical composition different from that of the first deposition substance. In the first cleaning process, cleaning conditions are set according to the accumulated supply time of a first source gas supplied to the inside of the process chamber through the gas introducing part, and in the second cleaning process, cleaning conditions are set according to the accumulated thickness of a film formed on the substrate.
摘要翻译：尽管反应管和气体供应喷嘴的膜质量和厚度不同，但是可以进行有效的清洁。提供了制造半导体器件的方法。该方法包括在基板上形成膜，进行第一清洗处理以除去附着在气体导入部的内壁的第一沉积物质，进行第二清洗处理，除去附着在气体导入部的内部的第二沉积物质处理室，其化学成分不同于第一沉积物质的化学成分。在第一清洗处理中，根据通过气体导入部供给到处理室内部的第一源气体的累积供给时间来设定清洗条件，在第二清洗处理中，根据累积的在基板上形成的膜的厚度。

4. 发明授权

US07884034B2 Method of manufacturing semiconductor device and substrate processing apparatus 有权
标题翻译：制造半导体器件和衬底处理设备的方法
公开(公告)号：US07884034B2
公开(公告)日：2011-02-08
申请号：US12551001
申请日：2009-08-31
申请人： Yoshiro Hirose , Yushin Takasawa , Tomohide Kato , Nanori Akae
发明人： Yoshiro Hirose , Yushin Takasawa , Tomohide Kato , Nanori Akae
IPC分类号： H01L21/31
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/45527
摘要： A silicon nitride film including stoichiometrically excessive silicon with respect to nitrogen is formed. The silicon nitride film may be formed by supplying dichlorosilane to a substrate under a condition where CVD (chemical vapor deposition) reaction is caused to form a silicon film including several or less atomic layers on the substrate, supplying ammonia to the substrate in a non-plasma atmosphere to thermally nitride the silicon film under a condition where the nitriding reaction of the silicon film by the ammonia is not saturated, and alternately repeating the supplying of dichlorosilane and the supplying of ammonia.
摘要翻译：形成包含相对于氮的化学计量过量的硅的氮化硅膜。氮化硅膜可以通过在基板上进行CVD（化学气相沉积）反应形成含有几个或更少原子层的硅膜的条件下向基板供给形成氮化硅膜，等离子体气氛，在硅膜的氮化反应不饱和的条件下对硅膜进行氮化氮化，交替重复供给二氯硅烷和供给氨。

5. 发明申请

US20100190348A1 Manufacturing method of semiconductor substrate and substrate processing apparatus 有权
标题翻译：半导体衬底和衬底处理设备的制造方法
公开(公告)号：US20100190348A1
公开(公告)日：2010-07-29
申请号：US12654878
申请日：2010-01-07
申请人： Naonori Akae , Yoshiro Hirose , Tomohide Kato
发明人： Naonori Akae , Yoshiro Hirose , Tomohide Kato
IPC分类号： H01L21/465 , H01L21/46 , H01L21/477
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/45527 , C23C16/45542 , H01L21/0217 , H01L21/0228 , H01L21/3143 , H01L21/3145 , H01L2924/3011
摘要： A first processing gas containing a first element and a second processing gas containing a second element are alternately supplied to a surface of a substrate placed in a processing chamber, to thereby form a first thin film, and a second processing gas and a third processing containing the first element and different from the first processing gas are alternately supplied, to thereby form a second thin film on the first thin film, having the same element component as that of the first thin film.
摘要翻译：将含有第一元素和含有第二元素的第二处理气体的第一处理气体交替地供给到放置在处理室中的基板的表面，从而形成第一薄膜，以及第二处理气体和含有交替地供给与第一处理气体不同的第一元件，从而在第一薄膜上形成与第一薄膜相同的元件成分的第二薄膜。

6. 发明申请

US20100055927A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：制造半导体器件和衬底加工设备的方法
公开(公告)号：US20100055927A1
公开(公告)日：2010-03-04
申请号：US12551001
申请日：2009-08-31
申请人： Yoshiro HIROSE , Yushin Takasawa , Tomohide Kato , Nanori Akae
发明人： Yoshiro HIROSE , Yushin Takasawa , Tomohide Kato , Nanori Akae
IPC分类号： H01L21/31
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/45527
摘要： A silicon nitride film including stoichiometrically excessive silicon with respect to nitrogen is formed. The silicon nitride film may be formed by supplying dichlorosilane to a substrate under a condition where CVD (chemical vapor deposition) reaction is caused to form a silicon film including several or less atomic layers on the substrate, supplying ammonia to the substrate in a non-plasma atmosphere to thermally nitride the silicon film under a condition where the nitriding reaction of the silicon film by the ammonia is not saturated, and alternately repeating the supplying of dichlorosilane and the supplying of ammonia.
摘要翻译：形成包含相对于氮的化学计量过量的硅的氮化硅膜。氮化硅膜可以通过在基板上进行CVD（化学气相沉积）反应形成含有几个或更少原子层的硅膜的条件下向基板供给形成氮化硅膜，等离子体气氛，在硅膜的氮化反应不饱和的条件下对硅膜进行氮化氮化，交替重复供给二氯硅烷和供给氨。

7. 发明申请

US20120126355A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：制造半导体器件，半导体器件和衬底加工设备的方法
公开(公告)号：US20120126355A1
公开(公告)日：2012-05-24
申请号：US13293636
申请日：2011-11-10
申请人： Norikazu Mizuno , Tomohide Kato , Takaaki Noda
发明人： Norikazu Mizuno , Tomohide Kato , Takaaki Noda
IPC分类号： H01L31/0232 , C23C16/46
CPC分类号： H01L27/14685 , C23C16/40 , C23C16/45534 , C23C16/45542 , C23C16/45544 , C23C16/45555 , C23C16/45557 , C23C16/52 , H01L21/02172 , H01L21/022 , H01L21/02205 , H01L21/02211 , H01L21/0223 , H01L21/02274 , H01L21/0228 , H01L27/1462 , H01L27/14627 , H01L31/0216 , H01L31/02161 , H01L31/02327
摘要： An oxide film capable of suppressing reflection of a lens is formed under a low temperature. A method of manufacturing a semiconductor device includes: (a) forming a lower layer oxide film on a lens formed on a substrate using a first processing source containing a first element, a second processing source containing a second element, an oxidizing source and a catalyst, the lower layer oxide film having a refractive index greater than that of air and less than that of the lens; and (b) forming an upper layer oxide film on the lower layer oxide film using the first processing source, the oxidizing source and the catalyst, the upper layer oxide film having a refractive index greater than that of the air and less than that of the lower layer oxide film.
摘要翻译：在低温下形成能够抑制透镜反射的氧化膜。一种制造半导体器件的方法包括：（a）使用包含第一元件的第一处理源，包含第二元件的第二处理源，氧化源和催化剂在形成在基板上的透镜上形成下层氧化膜，所述下层氧化膜的折射率大于空气的折射率，并且小于所述透镜的折射率; 和（b）使用第一处理源，氧化源和催化剂在下层氧化膜上形成上层氧化膜，上层氧化膜的折射率大于空气的折射率，并且小于下层氧化膜。

8. 发明申请

US20120266817A1 SUBSTRATE PROCESSING APPARATUS CAPABLE OF CLEANING INSIDE THEREOF AND CLEANING CONTROL APPARATUS FOR CONTROLLING CLEANING PROCESS OF SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：用于控制衬底处理装置的清洁过程的基板处理装置及其清洁控制装置
公开(公告)号：US20120266817A1
公开(公告)日：2012-10-25
申请号：US13541814
申请日：2012-07-05
申请人： Tomohide KATO
发明人： Tomohide KATO
IPC分类号： C23C16/56 , B05C11/10
CPC分类号： C23C16/345 , C23C16/4405 , C23C16/45523 , C23C16/52 , H01L21/0217 , H01L21/02211 , H01L21/02247 , H01L21/02255 , H01L21/0228 , H01L21/3185
摘要： A cleaning control apparatus capable of performing a cleaning process efficiently regardless of qualities and thicknesses of films formed in a process tube and a gas supply nozzle. The cleaning control apparatus employs cleaning request signal output units configured to output cleaning request signals requesting cleaning processes of a silicon-containing gas supply system and nitriding source gas supply system when accumulated amounts of the molecules of the silicon-containing gas and the nitriding source gas exceeds preset values.
摘要翻译：一种清洁控制装置，能够有效地进行清洁处理，而与处理管和气体供给喷嘴中形成的膜的质量和厚度无关。清洁控制装置使用清洗请求信号输出单元，其被配置为当含硅气体和氮化源气体的分子的累积量时，输出要求含硅气体供应系统和氮化源气体供应系统的清洁处理的清洁请求信号超过预设值。

9. 发明授权

US08847343B2 Method of manufacturing semiconductor device, semiconductor device and substrate processing apparatus 有权
标题翻译：制造半导体器件，半导体器件和衬底处理设备的方法
公开(公告)号：US08847343B2
公开(公告)日：2014-09-30
申请号：US13293636
申请日：2011-11-10
申请人： Norikazu Mizuno , Tomohide Kato , Takaaki Noda
发明人： Norikazu Mizuno , Tomohide Kato , Takaaki Noda
IPC分类号： H01L31/0232 , H01L31/0216 , H01L27/146 , C23C16/52 , C23C16/455 , C23C16/40
CPC分类号： H01L27/14685 , C23C16/40 , C23C16/45534 , C23C16/45542 , C23C16/45544 , C23C16/45555 , C23C16/45557 , C23C16/52 , H01L21/02172 , H01L21/022 , H01L21/02205 , H01L21/02211 , H01L21/0223 , H01L21/02274 , H01L21/0228 , H01L27/1462 , H01L27/14627 , H01L31/0216 , H01L31/02161 , H01L31/02327
摘要： An oxide film capable of suppressing reflection of a lens is formed under a low temperature. A method of manufacturing a semiconductor device includes: (a) forming a lower layer oxide film on a lens formed on a substrate using a first processing source containing a first element, a second processing source containing a second element, an oxidizing source and a catalyst, the lower layer oxide film having a refractive index greater than that of air and less than that of the lens; and (b) forming an upper layer oxide film on the lower layer oxide film using the first processing source, the oxidizing source and the catalyst, the upper layer oxide film having a refractive index greater than that of the air and less than that of the lower layer oxide film.
摘要翻译：在低温下形成能够抑制透镜反射的氧化膜。一种制造半导体器件的方法包括：（a）使用包含第一元件的第一处理源，包含第二元件的第二处理源，氧化源和催化剂在形成在基板上的透镜上形成下层氧化膜，所述下层氧化膜的折射率大于空气的折射率，并且小于所述透镜的折射率; 和（b）使用第一处理源，氧化源和催化剂在下层氧化膜上形成上层氧化膜，上层氧化膜的折射率大于空气的折射率，并且小于下层氧化膜。

10. 发明授权

US08524580B2 Manufacturing method of semiconductor substrate and substrate processing apparatus 有权
标题翻译：半导体衬底和衬底处理设备的制造方法
公开(公告)号：US08524580B2
公开(公告)日：2013-09-03
申请号：US12654878
申请日：2010-01-07
申请人： Naonori Akae , Yoshiro Hirose , Tomohide Kato
发明人： Naonori Akae , Yoshiro Hirose , Tomohide Kato
IPC分类号： H01L21/20 , H01L21/36 , C23C16/00
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/45527 , C23C16/45542 , H01L21/0217 , H01L21/0228 , H01L21/3143 , H01L21/3145 , H01L2924/3011
摘要： A first processing gas containing a first element and a second processing gas containing a second element are alternately supplied to a surface of a substrate placed in a processing chamber, to thereby form a first thin film, and a second processing gas and a third processing containing the first element and different from the first processing gas are alternately supplied, to thereby form a second thin film on the first thin film, having the same element component as that of the first thin film.
摘要翻译：将含有第一元素和含有第二元素的第二处理气体的第一处理气体交替地供给到放置在处理室中的基板的表面，从而形成第一薄膜，以及第二处理气体和含有交替地供给与第一处理气体不同的第一元件，从而在第一薄膜上形成与第一薄膜相同的元件成分的第二薄膜。

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